JPH0267713A - Multiple exposure process - Google Patents
Multiple exposure processInfo
- Publication number
- JPH0267713A JPH0267713A JP63218524A JP21852488A JPH0267713A JP H0267713 A JPH0267713 A JP H0267713A JP 63218524 A JP63218524 A JP 63218524A JP 21852488 A JP21852488 A JP 21852488A JP H0267713 A JPH0267713 A JP H0267713A
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- alignment
- wafer
- control circuit
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012806 monitoring device Methods 0.000 description 3
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は半導体素子製造等に用いられ、長時間の多重露
光を必要とする多重露光方法に関し、特に、多重露光間
におけるマスク等の原版とウニへ等の基板との位置関係
を精密に維持するようにした多重露光方法に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a multiple exposure method used in semiconductor device manufacturing etc. that requires multiple exposures over a long period of time. The present invention relates to a multiple exposure method that precisely maintains the positional relationship with a substrate such as a sea urchin.
[従来の技術]
昨今のIC,LSI等の半導体素子の高集積化に伴い、
これを製造する露光装置もますます高精度なものが要求
されている。マスクの回路パターンとウェハ上の回路パ
ターンとの位置合せ技術としては、マスクとクエへにそ
れぞれ設けられたアライメントマークを基準として投影
レンズを介して位置合せする方法が一般的であり、この
位置合せ後に露光が行なわれる。露光時間は露光光源の
強度やレジストの感度等によって調整される。光源が弱
かったり、レジストの感度が低かったりする場合には露
光時間を長くする必要があるが、シャッタの制御などの
原因で一括長時間露光が不可能な場合もある。その場合
には1ショットを2回以上に時分割して露光する多重露
光方式が提案されている。[Prior art] With the recent increase in the integration of semiconductor devices such as ICs and LSIs,
The exposure equipment used to manufacture these devices is also required to be more precise. A common method for aligning the circuit pattern on the mask and the circuit pattern on the wafer is to align them through a projection lens using alignment marks provided on the mask and the wafer as a reference. Exposure is then performed. The exposure time is adjusted depending on the intensity of the exposure light source, the sensitivity of the resist, etc. When the light source is weak or the sensitivity of the resist is low, it is necessary to lengthen the exposure time, but there are cases where long-time exposure is not possible due to factors such as shutter control. In this case, a multiple exposure method has been proposed in which one shot is time-divided and exposed two or more times.
[発明が解決しようとする課題]
ところが多重露光を行なうと、1ショットの露光時間が
長くなる。すなわち、マスクとクエハのアライメントマ
ークでアライメントをとってからそのショットの露光を
終了する迄の時間が長くなり、アライメントの有効時間
が問題となってくる。[Problems to be Solved by the Invention] However, when multiple exposure is performed, the exposure time for one shot becomes longer. That is, the time from when alignment is achieved using the alignment marks on the mask and the wafer until the exposure for that shot is completed becomes longer, and the effective time for alignment becomes a problem.
一度合せたアライメントが長時間露光によってずれる要
因としては
(1)露光中サーボをかけて現在位置を維持する場合、
■霊囲気変化等によるサーボ系計測位置からショット位
置までの伸び
■霊囲気変化等によるサーボ系位置検出手段に生ずるず
れ
(2)露光中にサーボを切って位置ロックする場合、
■他系統から発生する振動によるずれ
■熱膨張等による歪
■メカニカル的な位置維持能力の限界から生ずるずれ
などが考えられる。Factors that can cause the once aligned alignment to shift due to long exposure are: (1) When applying servo during exposure to maintain the current position, - Extension from the servo system measurement position to the shot position due to changes in aura, etc. - Changes in aura, etc. (2) When the servo is turned off during exposure to lock the position, ■ Misalignment due to vibrations generated from other systems ■ Distortion due to thermal expansion, etc. ■ Occurs from the limit of mechanical position maintenance ability There may be a discrepancy.
高精度のアライメントを行なうことができ、かつ加工線
幅が十分に細いとしてもこれらのずれによって焼付精度
が低下してしまう。Even if highly accurate alignment can be performed and the processed line width is sufficiently thin, the printing accuracy will deteriorate due to these deviations.
本発明の目的は、このような従来技術の問題点に鑑み、
長時間露光を必要とする場合でも、焼付精度を高く維持
できる多重露光方法を提供することにある。In view of the problems of the prior art, an object of the present invention is to
An object of the present invention is to provide a multiple exposure method capable of maintaining high printing accuracy even when long-time exposure is required.
[課題を解決するための手段および作用]上記目的を達
成するため本発明では、原版と基板とを対向させて位置
合せし、1ショットを2回以上に時分割して露光するこ
とにより、原版のパターンを基板に転写する多重露光方
法において、時分割された各露光間に原版と基板との位
置合せをやり直して焼付を行なうようにしている。[Means and effects for solving the problem] In order to achieve the above object, the present invention aligns the original plate and the substrate so that they face each other, and exposes the original plate in two or more times in a time-sharing manner. In a multiple exposure method for transferring a pattern of 1 to a substrate, the original and the substrate are repositioned between each time-divided exposure to perform printing.
これによれば、上述したような原因で生ずるずれが時分
割された各露光ごとに修正され、長時間露光を必要とす
る焼付においても高い焼付精度を維持して焼付が行なわ
る。According to this, the deviations caused by the above-mentioned causes are corrected for each time-divided exposure, and even in printing that requires long exposure, printing can be performed while maintaining high printing accuracy.
[実施例] 以下、図面を用いて本発明の詳細な説明する。[Example] Hereinafter, the present invention will be explained in detail using the drawings.
第1図は本発明の一実施例に係る多重露光方法を示す1
ショット分のフローチャートであり、第2図はこの方法
により露光を行なう露光装置の一例を示す概略図である
。第2図において1はマスク、2はウェハ、3はウェハ
2を保持して移動する移動機構を備えたウェハステージ
、4はマスク1とウェハ2のアライメントをとるための
アライメント光学系、5はアライメント光、6は露光光
源、7は露光光源6が発する光束、8は光源からの光を
遮断する手段であるシャッタ、9はレンズ、11は本装
置の動作を制御する制御回路、12はシャッタ8を駆動
するシャッタ駆動装置、13はウェハステージ3を駆動
するウェハステージ駆動装置である。FIG. 1 shows a multiple exposure method according to an embodiment of the present invention.
This is a flowchart for shots, and FIG. 2 is a schematic diagram showing an example of an exposure apparatus that performs exposure using this method. In FIG. 2, 1 is a mask, 2 is a wafer, 3 is a wafer stage equipped with a moving mechanism that holds and moves the wafer 2, 4 is an alignment optical system for aligning the mask 1 and the wafer 2, and 5 is an alignment device. 6 is an exposure light source, 7 is a luminous flux emitted by the exposure light source 6, 8 is a shutter which is a means for blocking the light from the light source, 9 is a lens, 11 is a control circuit that controls the operation of the apparatus, 12 is a shutter 8 13 is a wafer stage drive device that drives the wafer stage 3.
次に、この構成による露光装置がマスク1とウェハ2と
を対向させ、1ショットの露光を行なう手順を第1図(
a)を参照して説明する。Next, FIG. 1 shows the procedure for exposing the mask 1 and the wafer 2 to each other in the exposure apparatus having this configuration and performing one shot exposure.
This will be explained with reference to a).
まず、ステップ101では、マスク1とウェハ2上にそ
れぞれ設けられたアライメントマークにアライメント光
5を照射し、アライメント光学系4を用いてそれらの位
置ずれ量を検知し、検知された位置ずれ量を位置ずれ信
号32として制御回路11に送る。この信号を受信する
と制御回路11は、この信号に基づきウェハステージ駆
動装置13を起動してウェハステージ駆動信号33を発
信させ、マスク1とウェハ2のパターンが合致するよう
にウェハステージ3を駆動させてアライメントをとる。First, in step 101, the alignment light 5 is irradiated onto the alignment marks provided on the mask 1 and the wafer 2, and the amount of positional deviation between them is detected using the alignment optical system 4. It is sent to the control circuit 11 as a positional deviation signal 32. Upon receiving this signal, the control circuit 11 starts the wafer stage drive device 13 based on this signal to transmit a wafer stage drive signal 33, and drives the wafer stage 3 so that the patterns of the mask 1 and the wafer 2 match. Perform alignment.
次に、ステップ102では、制御回路11がシャッタ駆
動装置12を起動し、シャッタ駆動信号31を発信させ
てシャッタ8を開き、1回目の露光を行なう、−重露光
時間が経ったら、同様にしてシャッタ8を閉じる。ここ
で、露光時間の管理は装置固有のデータあるいはあらか
じめ設定されたデータに基づいて制御回路11が行なう
。Next, in step 102, the control circuit 11 starts the shutter drive device 12, transmits the shutter drive signal 31, opens the shutter 8, and performs the first exposure. Close the shutter 8. Here, the control circuit 11 manages the exposure time based on data specific to the apparatus or data set in advance.
そしてステップ103において、そのショットに必要な
光量が照射されたか否かを判断し、さらに露光が必要な
らばステップ101に戻り、アライメントをとり直す。Then, in step 103, it is determined whether the shot has been irradiated with the necessary amount of light, and if further exposure is required, the process returns to step 101 and alignment is re-performed.
既に必要な光量が照射されていわばそのショットの露光
を終了する。The necessary amount of light has already been irradiated and the exposure for that shot is finished.
第1図(b)に示す手順は1回のアライメントで2回の
露光を行なうようにしたものであり、他は同図(a)
と同様である。同図(a)の方法と同図(b)の方法
のいずれを選択するかは、1回の露光時間やアライメン
ト有効時間を考慮することによってなされる。1回の露
光時間は装置に固有のものであり、アライメント有効時
間は前述のアライメントがずれる要因によって決まるも
のであるから、前もってこれらを見積もっておく必要が
ある。The procedure shown in Figure 1(b) is such that two exposures are performed in one alignment, and the other steps are as shown in Figure 1(a).
It is similar to The selection of either the method shown in FIG. 4A or the method shown in FIG. 2B is made by considering one exposure time and alignment effective time. One exposure time is unique to the apparatus, and the effective alignment time is determined by the factors that cause the alignment to shift as described above, so it is necessary to estimate these in advance.
なお、露光を中断する手段としては、シャッタ8を用い
る以外に光源自身を点滅させる方法がある。また本実施
例ではウェハ2を移動させることによってマスク1とウ
ェハ2とのアライメントをとっているが、マスク1を動
かしてアライメントをとる方法もある。In addition to using the shutter 8, there is a method of blinking the light source itself as a means of interrupting the exposure. Further, in this embodiment, the mask 1 and the wafer 2 are aligned by moving the wafer 2, but there is also a method of aligning the mask 1 by moving the mask 1.
第3図は本発明の他の実施例に係る多重露光方法を示す
1ショット分のフローチャートであり、第4図はその実
施例に関わる露光装置の一例を示す概略図である。この
露光装置では露光光源6がX線源となっており、したが
ってレンズが無いが、紫外線を用いる場合でも同様であ
る6 14は雰囲気および振動を監視する監視装置であ
る。FIG. 3 is a flowchart for one shot showing a multiple exposure method according to another embodiment of the present invention, and FIG. 4 is a schematic diagram showing an example of an exposure apparatus related to the embodiment. In this exposure apparatus, the exposure light source 6 is an X-ray source, so there is no lens, but the same applies even when ultraviolet rays are used. 614 is a monitoring device that monitors the atmosphere and vibrations.
第3図に示す露光方法においては、ステップ121およ
び122で第1図に示した方法と同様にしてアライメン
トをとって露光をした後、ステップ123において1シ
ョットに必要な露光が行なわれたか否かの判断を行なう
。ここで、1ショットに必要な露光が行なわれていれば
露光を終了し、まだ露光が足りなければステップ124
へ進んでアライメントをとり直す必要があるが否かを判
断する。この判断基準としては、前述のアライメント有
効時間があるが、本実施例では監視装置14からの情報
を装置固有の要因に加味して制御回路11で判断してい
る。In the exposure method shown in FIG. 3, after aligning and exposing in steps 121 and 122 in the same manner as in the method shown in FIG. 1, it is determined in step 123 whether or not the exposure necessary for one shot has been performed. make a judgment. Here, if the exposure necessary for one shot has been performed, the exposure is finished; if the exposure is still insufficient, step 124
Proceed to step 3 to determine whether or not it is necessary to re-align. The above-mentioned alignment valid time is used as a criterion for this judgment, but in this embodiment, the control circuit 11 makes the judgment by taking information from the monitoring device 14 into consideration with factors specific to the device.
この方法によれば、第1図に示した方法では雰囲気変動
を見積りざらに安全を見込んでアライメントをとり直し
ているのに対し、実際の変動に即してアライメントの要
、不要を判断できるのでアライメントの冗長性がなくな
り、露光に要する時間が短縮される。According to this method, unlike the method shown in Figure 1, where alignment is recalibrated with safety in mind without estimating atmospheric fluctuations, it is possible to determine whether alignment is necessary or not based on actual fluctuations. Alignment redundancy is eliminated and exposure time is reduced.
[発明の効果]
以上説明したように、本発明の方法を用いれば、位置合
せ後の原版と基板との相対的位置関係を保ったまま長時
間の露光が可能となるため、高精度の位置合せを維持す
ることができ、微小線幅の加工性を生かした高精度な焼
付が実現できる。[Effects of the Invention] As explained above, by using the method of the present invention, it is possible to perform long-time exposure while maintaining the relative positional relationship between the original and the substrate after alignment. It is possible to maintain alignment and realize highly accurate printing that takes advantage of the workability of minute line widths.
法を示す1ショット分の概略フローチャート、第2図は
、本発明の一実施例に係る露光装置の概略図、
第3図は、本発明の他の実施例に係る多重露光方法を示
す1ショット分の概略フローチャート、そして
第4図は、本発明の他の実施例に係る露光装置の概略図
である。FIG. 2 is a schematic diagram of an exposure apparatus according to an embodiment of the present invention, and FIG. 3 is a one-shot flowchart showing a multiple exposure method according to another embodiment of the present invention. FIG. 4 is a schematic diagram of an exposure apparatus according to another embodiment of the present invention.
1:マスク、 2:ウェハ、 3:ウェハステージ、 4:アライメント光学系、 5:アライメント光、 6:光源、 7:光束、 8:シャッタ、 9:レンズ、 11:制御回路、 12:シャッタ駆動装置、 13:ウェハステージ駆動装置、 14:雰囲気、振動監視装置、 31:シャッタ駆動信号、 32:位置ずれ信号、 33:ウェハステージ駆動信号。1: Mask, 2: Wafer, 3: Wafer stage, 4: Alignment optical system, 5: Alignment light, 6: light source, 7: Luminous flux, 8: Shutter, 9: Lens, 11: control circuit, 12: shutter drive device, 13: Wafer stage drive device, 14: Atmosphere, vibration monitoring device, 31: shutter drive signal, 32: positional deviation signal, 33: Wafer stage drive signal.
(b) 第 図 第 図(b) No. figure No. figure
Claims (1)
トを2回以上に時分割して露光することにより、原版の
パターンを基板に転写する多重露光方法において、時分
割された各露光間に原版と基板との位置合せを必要に応
じやり直して露光を行なうことを特徴とする多重露光方
法。(1) In a multiple exposure method in which the pattern of the original is transferred to the substrate by aligning the original and the substrate so that they face each other and exposing one shot in two or more times in a time-divided manner, each exposure is time-divided. A multiple exposure method characterized by re-aligning the original and the substrate as necessary between exposures.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63218524A JPH0267713A (en) | 1988-09-02 | 1988-09-02 | Multiple exposure process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63218524A JPH0267713A (en) | 1988-09-02 | 1988-09-02 | Multiple exposure process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0267713A true JPH0267713A (en) | 1990-03-07 |
Family
ID=16721283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63218524A Pending JPH0267713A (en) | 1988-09-02 | 1988-09-02 | Multiple exposure process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0267713A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100273785B1 (en) * | 1991-07-18 | 2001-01-15 | 기타지마 요시토시 | Drawing method of pattern plate which has matching pattern and pattern plate drawn by the method |
JP2008064833A (en) * | 2006-09-05 | 2008-03-21 | Hitachi High-Technologies Corp | Exposure device, exposure method, and method for manufacturing panel substrate for display |
JP2010147203A (en) * | 2008-12-18 | 2010-07-01 | Nikon Corp | Exposure method and method of manufacturing device |
WO2017158929A1 (en) * | 2016-03-18 | 2017-09-21 | コニカミノルタ株式会社 | Organic electroluminescent element patterning method and patterning device |
-
1988
- 1988-09-02 JP JP63218524A patent/JPH0267713A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100273785B1 (en) * | 1991-07-18 | 2001-01-15 | 기타지마 요시토시 | Drawing method of pattern plate which has matching pattern and pattern plate drawn by the method |
JP2008064833A (en) * | 2006-09-05 | 2008-03-21 | Hitachi High-Technologies Corp | Exposure device, exposure method, and method for manufacturing panel substrate for display |
JP2010147203A (en) * | 2008-12-18 | 2010-07-01 | Nikon Corp | Exposure method and method of manufacturing device |
WO2017158929A1 (en) * | 2016-03-18 | 2017-09-21 | コニカミノルタ株式会社 | Organic electroluminescent element patterning method and patterning device |
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JPH1167638A (en) | Method and device for exposure | |
JPH0471217A (en) | Aligner |