JPS62248225A - Positioning device - Google Patents

Positioning device

Info

Publication number
JPS62248225A
JPS62248225A JP61091698A JP9169886A JPS62248225A JP S62248225 A JPS62248225 A JP S62248225A JP 61091698 A JP61091698 A JP 61091698A JP 9169886 A JP9169886 A JP 9169886A JP S62248225 A JPS62248225 A JP S62248225A
Authority
JP
Japan
Prior art keywords
reticle
wafer
glass plate
optical system
rotating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61091698A
Other languages
Japanese (ja)
Other versions
JPH0618166B2 (en
Inventor
Noriyuki Mitome
見留 範行
Akiyoshi Suzuki
章義 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP61091698A priority Critical patent/JPH0618166B2/en
Publication of JPS62248225A publication Critical patent/JPS62248225A/en
Publication of JPH0618166B2 publication Critical patent/JPH0618166B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enable positioning of a reticle and a wafer to be easily performed with high precision, by arranging a rotatable transparent glass plate, which is parallel and flat plane, on an optical path between the reticle and a projectional optical system, and then rotating the glass plate. CONSTITUTION:An electronic circuit pattern on the surface of a reticle 1 is projected and exposed on a plane of a wafer 4 with a given multiplying power in a projectional optical system 3. After a wafer stage is moved by one-shot in a constant amount, the positioning of the reticle 1 and the wafter 4 is performed to determine the shift between both of them by a measuring means. The amount of the shift is corrected by minute adjustment of rotating the glass plate 2 around axes A and B.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は半導体素子製造用の露光装置に使用する位置合
わせ装置に関し、特に電子回路パターンが形成されてい
るレチクルと電子回路パターンを投影するウェハ・との
微少なアライメント所鯖位は会わせを高精度に行うこと
のできる簡易な構成の位置合わせ装置に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an alignment device used in an exposure device for manufacturing semiconductor devices, and in particular to a reticle on which an electronic circuit pattern is formed and a wafer on which the electronic circuit pattern is projected.・This is a positioning device with a simple configuration that can perform minute alignment with high precision.

(従来の技術) 最近の半導体製造装置には半導体集積技術の発展に伴っ
て高解像力でしかも高スループツトである露光装置が要
求されている。これらの露光装置では投影光学系を用い
てレチクル面上の電子回路の微細パターノtウェハ面上
に縮少投影し、ステップ的に焼付けていく所謂ステッパ
ーが最近多く用いられている。
(Prior Art) With the development of semiconductor integration technology, recent semiconductor manufacturing equipment is required to have an exposure apparatus with high resolution and high throughput. In these exposure apparatuses, a so-called stepper has recently been widely used, which uses a projection optical system to reduce and project a fine pattern of electronic circuits on a reticle surface onto a wafer surface and print the pattern in steps.

このステッパーは比較的高い解像力が容易に得られ1又
つニへ面上を部分的に分割して露光していく為にウェハ
の歪の影響を少なくすることが出来1更にレチクル面上
の塵埃の影響を受けにくい等の特長を有している。
This stepper can easily obtain a relatively high resolution, and because it exposes parts of the surface in one or two parts, it can reduce the influence of distortion on the wafer. It has features such as being less susceptible to the effects of

しかしながらステッパーにおいて高解像力を得る為には
レチクルとウェハとの位置整合を高精度で行うことが必
要となってくる。
However, in order to obtain high resolution in a stepper, it is necessary to align the position of the reticle and wafer with high precision.

このうち投影光学系を介して各ショット毎にレチクルと
ウェハとの位置整合を行う所謂TTL 。
Among these, so-called TTL aligns the position of the reticle and wafer for each shot via a projection optical system.

ダイ・パイ・ダイアライメント方法は多少スループット
は低下するが高精度の位置合わせが可能である為、現在
多くの露光装置で用いられている。
The die-pie-die alignment method is currently used in many exposure apparatuses because it allows for highly accurate positioning although the throughput decreases to some extent.

従来より位置合わせを行う際にはレチクルとウェー・の
X万1cil−Y方向そして0(回転)方向のs!1t
″各ショット毎にレチクルステージとウェハステージの
双方を若しくは一方を駆動させて行って−る。しかしな
がらこれらの75Gでレチクルとウェハの微少調tit
行う場合には機構的に大変困難であつ九。又これらの方
法のうちか1えばレチクルステージを駆動させる方法は
レチクルがある基準点に対して整合されている場合には
基準点のずれとなってあられれてしまミスつエ・・ステ
ージを駆動させる方法はレチクル側の様に投影光学系の
投影倍率がかかってこないので高精度でしかも素早い駆
動が要求される場合1これを満足させろのが技術的に大
変困難であった。
Conventionally, when aligning the reticle and the way, the X million 1 cil-Y direction and the 0 (rotation) direction s! 1t
``For each shot, both or one of the reticle stage and wafer stage is driven. However, with these 75G, the fine adjustment of the reticle and wafer is
Mechanically, it is very difficult to do so. Also, among these methods, one method is to drive the reticle stage, but if the reticle is aligned with a certain reference point, the reference point may be misaligned, resulting in a mistake. Since this method does not depend on the projection magnification of the projection optical system as it does on the reticle side, it is technically very difficult to satisfy this requirement when high-precision and quick driving is required.

又X方向・Y方向の駆動に伴いO方向の成分誤差が生じ
てしまう等の欠点があった。
Further, there is a drawback that a component error in the O direction occurs due to driving in the X direction and the Y direction.

(発明が解決しようとする問題点) 本発明はレチクルとウェハの微少な位置整合tX方同\
Y方向に関してレチクルステージ若しくはウェー・ステ
ージ移動%動させることなく、簡J7fiIな構成によ
り容易にしかも高精度に行うことのできる半導体製造用
の露光装置に好適な位Iteわせ装置の提供全目的とす
る。
(Problems to be Solved by the Invention) The present invention provides minute positional alignment between the reticle and the wafer in both directions.
It is an object of the present invention to provide a positioning device suitable for an exposure device for semiconductor manufacturing, which can easily and highly accurately perform reticle stage or wave stage movement in the Y direction with a simple configuration. .

(問題点を解決するための手段) Vチクル面上のパターン七投影光学系を介し所定倍率で
クエ・・面上に投影する際1前記レチクルと前記投影光
学系との間の光路中に透明の平行平面のガラス板を配置
し・該ガラス板の配置位置を調整することにより前記レ
チクルとウェハの位tIt整合を行ったことでめる。
(Means for Solving the Problem) When projecting a pattern on a V-ticle surface at a predetermined magnification onto a V-ticle surface through a projection optical system, 1. By arranging a parallel plane glass plate and adjusting the position of the glass plate, alignment between the reticle and the wafer was achieved.

この他本発明の特徴は実施例において記載されている。Other features of the invention are described in the Examples.

(実施例) 第1図は本発明の一実施例の光学系の一部分の概略図で
ある。
(Embodiment) FIG. 1 is a schematic diagram of a part of an optical system according to an embodiment of the present invention.

図中1は電子回路パターンが形成されているレチクルで
あシ1不図示の照明系によシ均一に照明されている。3
は投影光学系、4はウェハ、2は平行平面の透明なガラ
ス板で6シレテクル1と投影光学系3との間の光路中に
回動可能に取シ付けられている。特に本実施例ではガラ
ス板2を投影光学系3の光軸31と直交する2つの軸A
、Bの回わシに回動可能に取り付けている。
In the figure, 1 is a reticle on which an electronic circuit pattern is formed, and is uniformly illuminated by an illumination system (not shown). 3
4 is a projection optical system, 4 is a wafer, and 2 is a parallel plane transparent glass plate, which is rotatably mounted in the optical path between the lens 1 and the projection optical system 3. In particular, in this embodiment, the glass plate 2 is arranged along two axes A perpendicular to the optical axis 31 of the projection optical system 3.
, is rotatably attached to the turning sash of B.

同図では角R−傾けている場合金示している。In the figure, the case where the angle R is tilted is shown as gold.

本実施例ではレチクル1面上の電子回路パターンを投影
光学系3により所定倍率で例えば見。
In this embodiment, the electronic circuit pattern on the surface of the reticle is viewed at a predetermined magnification using the projection optical system 3, for example.

殉倍の縮少倍率でウェハ4面上に投影し露光している。The image is projected and exposed onto the four surfaces of the wafer at a reduced magnification.

そしてウェハステージを1ショット後一定量移動嘔せた
後、レゾクル1とウェハ4との位1tIi合を行い1双
方のずれt不図示の計測手段により求めている。そして
このときのずれ量をガラス板2を軸A及び軸Bの回わり
に回動させることにより微少調整し補正している0これ
により例えばレチクル1面上の一点11ヲクエー4 l
1li上の点線で示す点41から実線で示す点42へと
移動させレチクル1とウェハ4との位置整合を行ってい
る。
After the wafer stage is moved a certain amount after one shot, the resolution 1 and the wafer 4 are aligned 1tIi, and the deviation t between the two is determined by a measuring means (not shown). Then, the amount of deviation at this time is slightly adjusted and corrected by rotating the glass plate 2 around the axis A and axis B. This allows, for example, one point 11 on the surface of the reticle 1 to be corrected.
The positions of the reticle 1 and the wafer 4 are aligned by moving the reticle 1li from a point 41 indicated by a dotted line to a point 42 indicated by a solid line.

例えばガラス板として厚さ3鵡1大きさ150X150
mのものを用い投影光学系3の投影倍率を見とした場合
、ガラス板を1′傾ければウニ八面上で0.06μmの
ずれ量金得ることができる。
For example, as a glass plate, the thickness is 3 cm and the size is 150 x 150.
When considering the projection magnification of the projection optical system 3 using a lens of m, if the glass plate is tilted by 1', a deviation of 0.06 μm can be obtained on the eight faces of the sea urchin.

本実施例においてレチクルとウェハの位置整合の良否に
関しては例えば本出願人が先に特開昭55−34490
号公報や特開昭53−135653号公報で提案してい
る方法により行っでいる。
Regarding the quality of alignment between the reticle and the wafer in this embodiment, for example, the present applicant previously published Japanese Patent Application Laid-Open No. 55-34490.
This is carried out by the method proposed in Japanese Patent Application Laid-Open No. 53-135653.

即ちレチクルとウェハ直上に各々位置整合用のアライメ
ントマークを設け、これらのアライメントマークの空間
的位置関係をレーザービームで走査し、アライメントマ
ークから生ずる散乱光束を光電変換して行っている。
That is, alignment marks for position alignment are provided directly above the reticle and the wafer, and the spatial relationship between these alignment marks is scanned with a laser beam, and the scattered light flux generated from the alignment marks is photoelectrically converted.

本実施例の位置合わせ装置は特に光源としてエキシマレ
ーザ−を用いた半導体製造用の露光装置に良好に適用す
ることができる。
The alignment apparatus of this embodiment can be particularly well applied to an exposure apparatus for semiconductor manufacturing that uses an excimer laser as a light source.

例えばエキシマレーザ−のパルス発光? 利用すればウ
ェハステージを静止させずに露光することのできる所i
1 on th@fly exposure syst
emK適用することができる。即ちステージ金定速移動
させ各ショット間のステージ移動の際中にレチクルとウ
ェハの位置整合を行い双方の微少のずれtをガラス板を
回転することKよシ容易にしかも迅速に補正することが
出来る。
For example, pulsed emission of excimer laser? If you use this, you can perform exposure without having to keep the wafer stage stationary.
1 on th@fly exposure syst
emK can be applied. That is, by moving the stage metal at a constant speed, aligning the positions of the reticle and wafer during the stage movement between each shot, and rotating the glass plate, it is possible to correct the slight deviation t between the two more easily and quickly. I can do it.

面木実施例において1枚のガラス板ではずれ量が不十分
の場合は2枚以上複数枚用いても良い0 又本実施例においてはガラス板を投影光学系とウェハと
の間の光路中に設けても良い。
In the faceplate embodiment, if one glass plate is insufficient for the amount of deviation, two or more glass plates may be used.In addition, in this embodiment, a glass plate is placed in the optical path between the projection optical system and the wafer. It may be provided.

(発明の効果) 本発明によればレチクルと投影光学系との間の光路中に
回動可能な平行平面の透明のガラス板を配置し、該ガラ
ス板全回動させることによりレチクルとウェハを容易に
、しかも高精度に位f!!整合することのできる位置合
わせ装置act達成することができる。
(Effects of the Invention) According to the present invention, a rotatable parallel flat transparent glass plate is arranged in the optical path between the reticle and the projection optical system, and the reticle and wafer are separated by fully rotating the glass plate. Easy and highly accurate! ! An alignment device act capable of alignment can be achieved.

特にレチクルとウェハの微少な位置調整金ステージを移
動させることなく単にガラス板を回転させることにより
迅速にしかも高精度に行うことのできる半導体製造用の
露元装誼に好適な位rIL会わせ装fLを達成すること
ができる。
In particular, this rIL assembly is suitable for semiconductor manufacturing, where minute positioning of the reticle and wafer can be done quickly and with high precision by simply rotating the glass plate without moving the gold stage. fL can be achieved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の光学系の一部分の概略図で
ある。 図中1はレチクルS2はガラス板、3は投影光学系、4
Fiウエハ、31け光軸である。
FIG. 1 is a schematic diagram of a portion of an optical system according to an embodiment of the present invention. In the figure, 1 indicates a reticle S2 is a glass plate, 3 indicates a projection optical system, and 4
Fi wafer, 31 optical axes.

Claims (1)

【特許請求の範囲】[Claims] レチクル面上のパターンを撮影光学系を介し所定倍率で
ウェハ面上に投影する際、前記レチクルと前記投影光学
系との間の光路中に透明の平行平面のガラス板を配置し
、該ガラス板の配置位置を調整することにより前記レチ
クルとウエハの位置整合を行つたことを特徴とする位置
合わせ装置。
When projecting a pattern on a reticle surface onto a wafer surface at a predetermined magnification via a photographing optical system, a transparent parallel plane glass plate is placed in the optical path between the reticle and the projection optical system, and the glass plate An alignment apparatus characterized in that the reticle and the wafer are aligned by adjusting the arrangement position of the reticle and the wafer.
JP61091698A 1986-04-21 1986-04-21 Projection exposure device Expired - Lifetime JPH0618166B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61091698A JPH0618166B2 (en) 1986-04-21 1986-04-21 Projection exposure device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61091698A JPH0618166B2 (en) 1986-04-21 1986-04-21 Projection exposure device

Publications (2)

Publication Number Publication Date
JPS62248225A true JPS62248225A (en) 1987-10-29
JPH0618166B2 JPH0618166B2 (en) 1994-03-09

Family

ID=14033736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61091698A Expired - Lifetime JPH0618166B2 (en) 1986-04-21 1986-04-21 Projection exposure device

Country Status (1)

Country Link
JP (1) JPH0618166B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04133414A (en) * 1990-09-26 1992-05-07 Nec Yamaguchi Ltd Reduced projection and aligner
JP2003309053A (en) * 2002-04-12 2003-10-31 Nikon Corp Aligner and exposure method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492553A (en) * 1972-04-19 1974-01-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS492553A (en) * 1972-04-19 1974-01-10

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04133414A (en) * 1990-09-26 1992-05-07 Nec Yamaguchi Ltd Reduced projection and aligner
JP2003309053A (en) * 2002-04-12 2003-10-31 Nikon Corp Aligner and exposure method

Also Published As

Publication number Publication date
JPH0618166B2 (en) 1994-03-09

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