JPS62115164A - Method and device for forming pattern - Google Patents
Method and device for forming patternInfo
- Publication number
- JPS62115164A JPS62115164A JP60253686A JP25368685A JPS62115164A JP S62115164 A JPS62115164 A JP S62115164A JP 60253686 A JP60253686 A JP 60253686A JP 25368685 A JP25368685 A JP 25368685A JP S62115164 A JPS62115164 A JP S62115164A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- wafer
- reference mark
- reference marks
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
この発明はウェハにパタンを形成する方法およびその方
法を実施するための装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method of forming a pattern on a wafer and an apparatus for carrying out the method.
半導体製造１−程の一つに、前工程までにウエノ１上に
形成されている回路パタンの一１〕に正しい位置関係を
保ちながら次のパタンを転写するいわゆるリソグラフィ
工程があり、そのためのパタン形成装置として縮小投影
露光装置やＸ線露光装置等が用いられている。One of the steps in semiconductor manufacturing is the so-called lithography process, which transfers the next pattern onto the circuit pattern formed on the wafer 1 in the previous process while maintaining the correct positional relationship. As a forming apparatus, a reduction projection exposure apparatus, an X-ray exposure apparatus, etc. are used.
第７図はＸ線を露光光源とする従来のパタン形成装置の
一部を示す概略図である。図において、６はステージ、
２０はステージ６を駆動する駆動装置、２４はパタン検
出器、１はステージ６上に載置されたウェハ、２は前工
程までにウェハ１に形成されている回路パタン、３はウ
ェハ２の表面に塗布されたホトレジスト膜、２１ａ、２
１ｂはウェハ１のパタン２が形成された面に設けられた
基準マーク、２２はホトマスク、２３ａ、２３ｂはホト
マスク２２に設けられた位置合わせ用の開口パタンで、
図中Ｘ線源は省略しである。FIG. 7 is a schematic diagram showing a part of a conventional pattern forming apparatus that uses X-rays as an exposure light source. In the figure, 6 is a stage,
20 is a driving device that drives the stage 6; 24 is a pattern detector; 1 is a wafer placed on the stage 6; 2 is a circuit pattern formed on the wafer 1 in the previous process; 3 is the surface of the wafer 2. photoresist film applied to 21a, 2
1b is a reference mark provided on the surface of the wafer 1 on which the pattern 2 is formed; 22 is a photomask; 23a and 23b are opening patterns for positioning provided in the photomask 22;
The X-ray source is omitted in the figure.
このようなパタン形成装置によってホトマスク２２上の
パタンをウェハ１」二に転写するには、パタン検出器２
４で基準マーク２１ａ、２１ｂおよび開「１パタン２３
ａ、２３ｂを検知しながら駆動装置２０を制御すること
により、開口パタン２３ａ、２３ｂの中央に基準マーク
２］ａ、２１ｂが位置するように、ステージ６を駆動装
置２０で移動し、パタン２の位置とホトマスク２２上の
パタンの位置とを正しく合わせ、つぎにパタン検出器２
４を露光範囲外に移動した後、露光装置（図示せず）に
より霧光する。In order to transfer the pattern on the photomask 22 onto the wafer 1''2 using such a pattern forming apparatus, the pattern detector 2 is
4, the reference marks 21a, 21b and the open "1 pattern 23
By controlling the drive device 20 while detecting the opening patterns 23a and 23b, the stage 6 is moved by the drive device 20 so that the reference marks 2]a and 21b are located at the center of the opening patterns 23a and 23b. Correctly align the position with the pattern position on the photomask 22, and then
4 out of the exposure range, it is fogged by an exposure device (not shown).
しかしながら、このような方法でパタンを形成したとき
には、基準マーク２］ａ、２Ｉｂ上に半導体製造工程に
伴って多数の層が形成されるから、基準マーク２＋ａ、
２１ｂの形状が劣化し、また塗布されたホ１ヘレジス１
へ膜３の上から基準マーク２］ａ、２１ｂを観察せざる
をえないため、Ｓ／Ｎ比の良い検出信号が得られないの
で、位置合わせ精度が半導体製造工程に伴って低下する
。また、パタンを転写するたびごとに、パタン検出器２
４を露光範囲外に移動する必要がある。However, when a pattern is formed by such a method, many layers are formed on the reference marks 2]a, 2Ib in accordance with the semiconductor manufacturing process, so that the reference marks 2+a, 2Ib are formed on the reference marks 2+a, 2Ib.
The shape of 21b has deteriorated and the applied
Since it is necessary to observe the reference marks 2]a and 21b from above the film 3, a detection signal with a good S/N ratio cannot be obtained, so that the alignment accuracy decreases as the semiconductor manufacturing process progresses. Also, each time a pattern is transferred, the pattern detector 2
4 needs to be moved out of the exposure range.
この発明は一ヒ述の問題点を解決するためになされたも
ので、常に高い位置合わせ精度が得られ、またパタンを
転写するたびごとに検知手段を露光範囲外に移動する必
要がないパタン形成方法およびその方法を実施するため
の装置を提供することを目的とする。This invention was made in order to solve the above-mentioned problems, and it is possible to always obtain high positioning accuracy, and also to form patterns without the need to move the detection means out of the exposure range each time a pattern is transferred. The object is to provide a method and an apparatus for carrying out the method.
この目的を達成するため、この発明においては、ウェハ
のパタンか形成される面と反対側の面に設けられた基準
マークを基準としてパタンを形成する。また、ウェハの
パタンか形成される面と反対側の面に設けられた基準マ
ークを検知する検知手段と、その検出手段から得られる
マーク位置情報に基づいて一ト記ウェハのパタン形成面
に上記パタンを転写するパタン転写手段とを設ける。In order to achieve this object, in the present invention, a pattern is formed using a reference mark provided on a surface of the wafer opposite to the surface on which the pattern is formed. Further, a detection means for detecting a reference mark provided on the surface opposite to the surface on which the pattern is formed on the wafer, and a detection means for detecting the reference mark provided on the surface opposite to the surface on which the pattern is formed on the wafer, and a detection means for detecting the reference mark on the pattern formation surface of the wafer based on the mark position information obtained from the detection means. A pattern transfer means for transferring the pattern is provided.
第１図はこの発明に係る縮小投影露光装置の一部を示す
概略図である。図において、４は次に転写すべき回路パ
タンの拡大図が描かれたレティクル、５は縮小レンズ、
７ａ、７ｂはウェハ１のパタン２が形成される面と反対
側の面に設けられた基準マークで、基準マーク７ａ、７
ｂは凹部からなり、基準マーク７ａ、７ｂは縮小レンズ
５を含む露光光学系のフィールドの両端部に設けられて
いる。８は基準マーク７ａ、７ｂを検知する光学式のパ
タン検出器で、パタン検出器８はウェハ１のパタン２が
形成される面と反対側に設置されており、パタン検出器
８の２系統の光学系の軸間距離と基準マーク７ａ、７ｂ
間の距離とは一致しており、パタン検出器８から得られ
るマーク位置情報に基づいて駆動装置２０が制御される
。FIG. 1 is a schematic diagram showing a part of a reduction projection exposure apparatus according to the present invention. In the figure, 4 is a reticle with an enlarged view of the circuit pattern to be transferred next, 5 is a reduction lens,
Reference marks 7a and 7b are provided on the surface of the wafer 1 opposite to the surface on which the pattern 2 is formed, and the reference marks 7a and 7
b consists of a concave portion, and reference marks 7a and 7b are provided at both ends of the field of the exposure optical system including the reduction lens 5. Reference numeral 8 denotes an optical pattern detector that detects the reference marks 7a and 7b.The pattern detector 8 is installed on the side of the wafer 1 opposite to the surface on which the pattern 2 is formed. Interaxial distance of optical system and reference marks 7a, 7b
The distances between the marks match, and the drive device 20 is controlled based on the mark position information obtained from the pattern detector 8.
この縮小投影霧光装置によりパタンを形成するには、パ
タン検出器８が基準マーク７ａ、７ｂの中心位置を捉え
た状態でレティクル４上の回路パタンを露光した場合に
、レティクル４上の回路パタンと前工程までにウェハ１
１：に形成されたパタン２とが正しく整合するように、
パタン検出器８と露光光学系の位置関係をあらかじめ定
めておき、パタン検出器８で基準マーク７ａ、７ｂを検
知しながら駆動′ＪＡ置２０を制御し、ステージ６を移
動して、パタン検出器８が基準マーク７ａ、７ｂの中心
位置を捉えた状態とする。この後、露光することにより
レティクル４上の回路パタンをウェハ１」二に転写する
。In order to form a pattern using this reduction projection fog light device, when the circuit pattern on the reticle 4 is exposed with the pattern detector 8 capturing the center position of the reference marks 7a and 7b, the circuit pattern on the reticle 4 is exposed. and wafer 1 by the previous process.
1: so that the pattern 2 formed in
The positional relationship between the pattern detector 8 and the exposure optical system is determined in advance, and the drive position 20 is controlled while the pattern detector 8 detects the reference marks 7a and 7b, and the stage 6 is moved. 8 captures the center position of the reference marks 7a and 7b. Thereafter, the circuit pattern on the reticle 4 is transferred onto the wafer 1'' by exposure.
このように、基準マーク７ａ、７ｂをウェハ１のパタン
２が形成される面と反対側の面に設ければ、基準マーク
７ａ、７ ｂ−ｌ−、に層が形成されることがなく、し
かもホトレジスト膜も塗布されないので、基準マーク７
ａ、７ｂの形状が半導体装岡の製造工程に伴って劣化す
ることはない。また、パタン検出器８をウェハ１のパタ
ン２が形成される面と反対側に設置することができるか
ら、パタンを転写するたびごとに、パタン検出器８を霧
光光路外に移動する必要がない。In this way, by providing the reference marks 7a, 7b on the surface of the wafer 1 opposite to the surface on which the pattern 2 is formed, no layer is formed on the reference marks 7a, 7bl-, Moreover, since no photoresist film is applied, the reference mark 7
The shapes of a and 7b do not deteriorate during the manufacturing process of the semiconductor mounting plate. Furthermore, since the pattern detector 8 can be installed on the side of the wafer 1 opposite to the surface on which the pattern 2 is formed, it is not necessary to move the pattern detector 8 out of the fog light optical path each time a pattern is transferred. do not have.
なお、基準マーク７ａ、７ｂは第１層目のパタン２を形
成する前に形成しておくが、基準マーク７ａ、７ｂを形
成するには、密着露光法、投影露光法等によるエツチン
グ技術等で形成でき、また異方性エツチング技術を利用
しても良い。さらに、基準マークとしては、第２図に示
すように、口型の基準マークｌＯａ、十型の基準マーク
１０ｂ、ｘ型の基準マーク１０ｃ等種々のものを用いる
ことができ、さらに基準マークの配列位置は従来と異な
って回路パタンによる制約を全く受けないが、基準マー
ク１０Ｃのように回路チップのスクライブ領域に相当す
る箇所に設けることもできる。Note that the reference marks 7a and 7b are formed before forming the first layer pattern 2, but in order to form the reference marks 7a and 7b, an etching technique such as a contact exposure method or a projection exposure method is used. Alternatively, an anisotropic etching technique may be used. Furthermore, as shown in FIG. 2, various types of reference marks can be used, such as a mouth-shaped reference mark lOa, a ten-shaped reference mark 10b, an x-shaped reference mark 10c, and an arrangement of the reference marks. Although the position is not restricted at all by the circuit pattern unlike in the past, it can also be provided at a location corresponding to the scribe area of the circuit chip, like the reference mark 10C.
第３図はこの発明に係るパタン形成方法に用いるウェハ
を示す概略断面図である。このウェハにおいては、パタ
ン２が形成される面と反対側の面に凹所１１が形成され
ており、凹所１１の底面に基準マーク７が設けられてい
るから、基準マーク７を機械的な接触による摩耗から保
護することができ、またウェハ１のパタン２が形成され
る面と基準マーク７が設けられた面との距離ｄが小さく
なるから、ウェハ１の傾きに起因する位置合わせずれを
小さくすることが可能である。FIG. 3 is a schematic cross-sectional view showing a wafer used in the pattern forming method according to the present invention. In this wafer, a recess 11 is formed on the surface opposite to the surface on which the pattern 2 is formed, and a reference mark 7 is provided on the bottom surface of the recess 11. It is possible to protect the wafer from wear due to contact, and since the distance d between the surface of the wafer 1 on which the pattern 2 is formed and the surface on which the reference mark 7 is provided becomes small, misalignment caused by the inclination of the wafer 1 can be prevented. It is possible to make it smaller.
第４図はこの発明に係るパタン形成装置の一部を示す概
略図である。図において、１２はウェハ１のパタン２が
形成される面と反対側の面に設けられたフレネルリング
で、フレネルリング１２は第５図に示すような形状であ
る。１３は平行なレーザビームを発生するレーザビーム
発生装置、１５はレーザビームをフレネルリング１２に
照射した場合に生するスポット像１４を検知するポジシ
ョンセンサで、ポジションセンサ１５から得られるマー
ク位置情報に基づいて駆動装置２０が制御される。FIG. 4 is a schematic diagram showing a part of the pattern forming apparatus according to the present invention. In the figure, reference numeral 12 denotes a Fresnel ring provided on the surface of the wafer 1 opposite to the surface on which the pattern 2 is formed, and the Fresnel ring 12 has a shape as shown in FIG. 13 is a laser beam generator that generates a parallel laser beam; 15 is a position sensor that detects a spot image 14 generated when the Fresnel ring 12 is irradiated with a laser beam; The drive device 20 is controlled accordingly.
このパタン形成装置においては、ポジションセンサ１５
をウェハ１から離れた箇所に位置させることができるか
ら、ポジションセンサ１５とステージ６とが機械的に干
渉することがない。In this pattern forming device, the position sensor 15
Since the position sensor 15 and the stage 6 can be located apart from the wafer 1, there is no mechanical interference between the position sensor 15 and the stage 6.
第６図はこの発明に係るＸ線露光装置の一部を示す概略
図である。図において、１７はＸ線源、１６はウェハ１
のパタン２が形成される面にごく近接して設置されたＸ
線マスク、１８ａ、１８ｂはＸ線マスク１Ｇに設けられ
た合わせマーク、１９ａ、［ｂはウェハ１の合わせマー
ク１８ａ、１８ｂと対向する位置に設けられた貫通穴で
１貫通穴１９ａ、ＩＱｂの近傍に基準マーク７ａ、７ｂ
が設けられている。FIG. 6 is a schematic diagram showing a part of the X-ray exposure apparatus according to the present invention. In the figure, 17 is an X-ray source, 16 is a wafer 1
X installed very close to the surface on which pattern 2 is formed.
line mask, 18a, 18b are alignment marks provided on the X-ray mask 1G; 19a, [b are through holes provided at positions facing alignment marks 18a, 18b on wafer 1; 1 near through holes 19a, IQb; Reference marks 7a, 7b
is provided.
このＸ線ｎ光装置においては、基準マーク７ａ、７ｂと
同時に合わせマーク＋８ａ、１８１）を検知することが
できるから、あらかじめパタン検出器８と露光光学系と
の位置関係髪定める必要がない。また、パタン検出器８
がウェハ１のパタン２が形成された面と反対側の面に配
置されており、露光中にＸ線源１７からの露光Ｘ線を妨
げることなく、基準マーク７ａ、７ｂおよび合わせマー
ク１８ａ、１８ｂを検知することができるから、露光中
に常時駆動装置２０を制御することが可能である。さら
に、基準マーク７ａ、７ｂが凹所１１の底面に設けられ
ているから、基準マーク７ａ、７ｂと合わせマーク］、
８ａ、＋８ｂとの間の距離が非常に小さいので、パタン
検出器８の検出光学系の焦点深度が小さくとも、基準マ
ーク７ａ、７ｂと合わせマーク１８ａ、１８ｂとを同時
に観察することが可能である。In this X-ray n-light device, since the alignment marks +8a, 181) can be detected at the same time as the reference marks 7a, 7b, there is no need to determine the positional relationship between the pattern detector 8 and the exposure optical system in advance. In addition, the pattern detector 8
are arranged on the surface of the wafer 1 opposite to the surface on which the pattern 2 is formed, and the reference marks 7a, 7b and the alignment marks 18a, 18b can be removed without interfering with the exposure X-rays from the X-ray source 17 during exposure. Since it is possible to detect this, it is possible to constantly control the drive device 20 during exposure. Furthermore, since the reference marks 7a, 7b are provided on the bottom surface of the recess 11, the reference marks 7a, 7b and the alignment mark],
Since the distance between the reference marks 7a and +8b is very small, even if the depth of focus of the detection optical system of the pattern detector 8 is small, it is possible to simultaneously observe the reference marks 7a and 7b and the alignment marks 18a and 18b. .
なお、上述実施例においては、光学式のパタン検出器８
を用いたが、電子ビーム式のパタン検出器を用いること
により、一層の高精度化を図ることができる。Note that in the above embodiment, the optical pattern detector 8
However, by using an electron beam type pattern detector, even higher precision can be achieved.
以上説明したように、この発明に係るパタン形成方法お
よびその装置においては、基準マークが劣化することが
ないので、常に高精度の位置合わせを行なうことができ
る。また、基準マークを検知する検知手段をウェハのパ
タンか形成される面と反対側の面に配置することができ
るから、パタンを転写するたびごとに検知手段を宥光範
囲外に移動する必要がない。このように、この発明の効
果は顕著である。As explained above, in the pattern forming method and apparatus according to the present invention, the reference mark does not deteriorate, so highly accurate positioning can be performed at all times. Furthermore, since the detection means for detecting the fiducial mark can be placed on the surface of the wafer opposite to the surface on which the pattern is formed, there is no need to move the detection means out of the bright light range each time the pattern is transferred. do not have. As described above, the effects of this invention are remarkable.
第１図はこの発明に係る縮小投影露光装置の一部を示す
概略図、第２図はこの発明に係るパタン形成方法に使用
するウェハを示す図、第３図はこの発明に係るパタン形
成方法に使用する他のウェハを示す概略断面図、第４図
はこの発明に係るパタン形成装置の一部を示す概略図、
第５図は第４図に示したウェハに設けられたフレネルリ
ングを示す図、第６図はこの発明に係るＸ線癲光装置の
一部栓示す概略図、第７図は従来のパタン形成装置の一
部を示す概略図である。
１・・ウェハ ２・・・回路パタン４・・・
レティクル ６・・・ステージ７ａ、７ｂ・・・
基準マーク
８・・・パタン検出器 １２・・・フレネルリング
１；３・・レーザビーム発生装置
１５・・・ポジションセンサ １６・・・Ｘ線マスク＋
８ａ、］８ｂ・・・合オ）せマーク
１９ａ、１９＋）・・・貫通穴
代理人弁理士 中 村 純之助
才３図
１１′
牙４図
牙５図
５１−６ 図
牙７図
２３ａ−却′２゜
２←竺３１２．。FIG. 1 is a schematic diagram showing a part of a reduction projection exposure apparatus according to the present invention, FIG. 2 is a diagram showing a wafer used in the pattern forming method according to the present invention, and FIG. 3 is a diagram showing a pattern forming method according to the present invention. FIG. 4 is a schematic cross-sectional view showing another wafer used in the present invention; FIG.
FIG. 5 is a diagram showing a Fresnel ring provided on the wafer shown in FIG. 4, FIG. 6 is a schematic diagram showing a part of the X-ray phosphorescence apparatus according to the present invention, and FIG. 7 is a diagram showing a conventional pattern forming method. FIG. 2 is a schematic diagram showing a part of the device. 1...Wafer 2...Circuit pattern 4...
Reticle 6... Stage 7a, 7b...
Reference mark 8... Pattern detector 12... Fresnel ring 1; 3... Laser beam generator 15... Position sensor 16... X-ray mask +
8a, ] 8b...Set mark 19a, 19+)...Through hole representative patent attorney Junnosuke Nakamura 3 Figure 11' Fang 4 Figure Fang 5 Figure 51-6 Figure 7 Figure 23a-' 2゜2←312. .
Claims (8)
けられた基準マークを基準としてパタンを形成すること
を特徴とするパタン形成方法。(1) A pattern forming method characterized in that a pattern is formed using a reference mark provided on a surface of a wafer opposite to the surface on which the pattern is formed.
凹部であることを特徴とする特許請求の範囲第１項記載
のパタン形成方法。(2) The pattern forming method according to claim 1, wherein the reference mark is a recess formed on the surface of the wafer.
徴とする特許請求の範囲第１項記載のパタン形成方法。(3) The pattern forming method according to claim 1, wherein the reference mark is a Fresnel ring.
底面に設けたことを特徴とする特許請求の範囲第１項記
載のパタン形成方法。(4) The pattern forming method according to claim 1, wherein the reference mark is provided on the bottom surface of a recess provided in the wafer.
の近傍に設けたことを特徴とする特許請求の範囲第１項
記載のパタン形成方法。(5) The pattern forming method according to claim 1, wherein the reference mark is provided near a through hole provided in the wafer.
けられた基準マークを検知する検知手段と、その検知手
段から得られるマーク位置情報に基づいて上記ウェハの
パタン形成面にパタンを転写するパタン転写手段とを有
することを特徴とするパタン形成装置。(6) A detection means for detecting a reference mark provided on the surface of the wafer opposite to the surface on which the pattern is formed, and a pattern on the pattern formation surface of the wafer based on the mark position information obtained from the detection means. 1. A pattern forming apparatus comprising: a pattern transfer means for transferring a pattern.
用する形式のパタン検出器を有することを特徴とする特
許請求の範囲第６項記載のパタン形成装置。(7) The pattern forming apparatus according to claim 6, wherein the detection means includes a pattern detector that uses reflected light from the reference mark.
器を有することを特徴とする特許請求の範囲第６項記載
のパタン形成装置。(8) The pattern forming apparatus according to claim 6, wherein the detection means includes a pattern detector using an electron beam.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60253686A JPS62115164A (en) | 1985-11-14 | 1985-11-14 | Method and device for forming pattern |
| US06/927,939 US4798470A (en) | 1985-11-14 | 1986-11-07 | Pattern printing method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60253686A JPS62115164A (en) | 1985-11-14 | 1985-11-14 | Method and device for forming pattern |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62115164A true JPS62115164A (en) | 1987-05-26 |
Family
ID=17254735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60253686A Pending JPS62115164A (en) | 1985-11-14 | 1985-11-14 | Method and device for forming pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62115164A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002361892A (en) * | 2001-06-13 | 2002-12-18 | Ricoh Co Ltd | Ink supply unit, recording head and ink jet recorder |
| KR100579603B1 (en) * | 2001-01-15 | 2006-05-12 | 에이에스엠엘 네델란즈 비.브이. | Lithographic Apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5271985A (en) * | 1975-12-08 | 1977-06-15 | Siemens Ag | Apparatus for making iluminating pattern for specimen |
| JPS52136577A (en) * | 1976-05-11 | 1977-11-15 | Nippon Chemical Ind | Aligning device |
| JPS5491183A (en) * | 1977-12-28 | 1979-07-19 | Fujitsu Ltd | Production of semiconductor device |
-
1985
- 1985-11-14 JP JP60253686A patent/JPS62115164A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5271985A (en) * | 1975-12-08 | 1977-06-15 | Siemens Ag | Apparatus for making iluminating pattern for specimen |
| JPS52136577A (en) * | 1976-05-11 | 1977-11-15 | Nippon Chemical Ind | Aligning device |
| JPS5491183A (en) * | 1977-12-28 | 1979-07-19 | Fujitsu Ltd | Production of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100579603B1 (en) * | 2001-01-15 | 2006-05-12 | 에이에스엠엘 네델란즈 비.브이. | Lithographic Apparatus |
| JP2002361892A (en) * | 2001-06-13 | 2002-12-18 | Ricoh Co Ltd | Ink supply unit, recording head and ink jet recorder |
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