JPH0261736B2 - - Google Patents

Info

Publication number
JPH0261736B2
JPH0261736B2 JP58089308A JP8930883A JPH0261736B2 JP H0261736 B2 JPH0261736 B2 JP H0261736B2 JP 58089308 A JP58089308 A JP 58089308A JP 8930883 A JP8930883 A JP 8930883A JP H0261736 B2 JPH0261736 B2 JP H0261736B2
Authority
JP
Japan
Prior art keywords
resist
plasma etching
film
radiation
resists
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58089308A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59154A (ja
Inventor
Meiyaa Josefu
Jon Binton Debitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS59154A publication Critical patent/JPS59154A/ja
Publication of JPH0261736B2 publication Critical patent/JPH0261736B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • ing And Chemical Polishing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58089308A 1982-05-26 1983-05-23 プラズマエツチングに耐性を有するレジストマスクを形成する方法 Granted JPS59154A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8215432 1982-05-26
GB08215432A GB2121198A (en) 1982-05-26 1982-05-26 Plasma-etch resistant mask formation

Publications (2)

Publication Number Publication Date
JPS59154A JPS59154A (ja) 1984-01-05
JPH0261736B2 true JPH0261736B2 (OSRAM) 1990-12-20

Family

ID=10530658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58089308A Granted JPS59154A (ja) 1982-05-26 1983-05-23 プラズマエツチングに耐性を有するレジストマスクを形成する方法

Country Status (5)

Country Link
US (1) US4504574A (OSRAM)
EP (1) EP0095212B1 (OSRAM)
JP (1) JPS59154A (OSRAM)
DE (1) DE3375839D1 (OSRAM)
GB (1) GB2121198A (OSRAM)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2121197A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
US4601778A (en) * 1985-02-25 1986-07-22 Motorola, Inc. Maskless etching of polysilicon
EP0238690B1 (en) * 1986-03-27 1991-11-06 International Business Machines Corporation Process for forming sidewalls
JP2550982B2 (ja) * 1987-04-06 1996-11-06 富士通株式会社 レジストマスクの形成方法
US5545290A (en) * 1987-07-09 1996-08-13 Texas Instruments Incorporated Etching method
US4873176A (en) * 1987-08-28 1989-10-10 Shipley Company Inc. Reticulation resistant photoresist coating
US5912187A (en) * 1993-12-30 1999-06-15 Lucent Technologies Inc. Method of fabricating circuits
HK1048888A1 (zh) 1999-09-10 2003-04-17 Oerlikon Usa Inc. 磁极制备的方法和设备
US6547975B1 (en) 1999-10-29 2003-04-15 Unaxis Usa Inc. Magnetic pole fabrication process and device
US20030003374A1 (en) * 2001-06-15 2003-01-02 Applied Materials, Inc. Etch process for photolithographic reticle manufacturing with improved etch bias
US7183201B2 (en) 2001-07-23 2007-02-27 Applied Materials, Inc. Selective etching of organosilicate films over silicon oxide stop etch layers
WO2003021659A1 (en) 2001-09-04 2003-03-13 Applied Materials, Inc. Methods and apparatus for etching metal layers on substrates
WO2003089990A2 (en) * 2002-04-19 2003-10-30 Applied Materials, Inc. Process for etching photomasks
WO2004086143A2 (en) * 2003-03-21 2004-10-07 Applied Materials, Inc. Multi-step process for etching photomasks
US20040192058A1 (en) * 2003-03-28 2004-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-etching plasma treatment to form dual damascene with improved profile
US7077973B2 (en) * 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
KR100630677B1 (ko) * 2003-07-02 2006-10-02 삼성전자주식회사 포토레지스트 패턴에의 불소를 포함하지 않는 탄소 함유폴리머 생성을 위한 플라즈마 전처리를 포함하는 식각 방법
US7521000B2 (en) * 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US7829243B2 (en) * 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
US8293430B2 (en) * 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
CN101046626B (zh) * 2006-03-30 2012-03-14 应用材料公司 适于制造光掩模的蚀刻钼层方法
KR100944846B1 (ko) * 2006-10-30 2010-03-04 어플라이드 머티어리얼스, 인코포레이티드 마스크 에칭 프로세스
US8507191B2 (en) 2011-01-07 2013-08-13 Micron Technology, Inc. Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253888A (en) * 1978-06-16 1981-03-03 Matsushita Electric Industrial Co., Ltd. Pretreatment of photoresist masking layers resulting in higher temperature device processing
US4187331A (en) * 1978-08-24 1980-02-05 International Business Machines Corp. Fluorine plasma resist image hardening
NL8004007A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
US4382985A (en) * 1980-10-11 1983-05-10 Daikin Kogyo Co., Ltd. Process for forming film of fluoroalkyl acrylate polymer on substrate and process for preparing patterned resist from the film
US4370405A (en) * 1981-03-30 1983-01-25 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4373018A (en) * 1981-06-05 1983-02-08 Bell Telephone Laboratories, Incorporated Multiple exposure microlithography patterning method

Also Published As

Publication number Publication date
JPS59154A (ja) 1984-01-05
EP0095212B1 (en) 1988-03-02
EP0095212A3 (en) 1985-01-16
GB2121198A (en) 1983-12-14
EP0095212A2 (en) 1983-11-30
DE3375839D1 (en) 1988-04-07
US4504574A (en) 1985-03-12

Similar Documents

Publication Publication Date Title
JPH0261736B2 (OSRAM)
US4600686A (en) Method of forming a resist mask resistant to plasma etching
US5948570A (en) Process for dry lithographic etching
US6210843B1 (en) Modulation of peripheral critical dimension on photomask with differential electron beam dose
WO2001098836A2 (en) Method of reducing post-development defects in and around openings formed in photoresist by use of non-patterned exposure
JPH0466345B2 (OSRAM)
US4268607A (en) Method of patterning a resist layer for manufacture of a semiconductor element
JPH03116147A (ja) フォトマスクブランクおよびフォトマスク
JPH0463349A (ja) フォトマスクブランクおよびフォトマスク
US5851734A (en) Process for defining resist patterns
JP3319568B2 (ja) プラズマエッチング方法
JP3605485B2 (ja) フオトマスク用エッチング装置
JPH0572737A (ja) 化学増幅型レジストおよびこれを用いた露光用マスクの製造方法
JP2783973B2 (ja) Ｘ線リソグラフィ用マスクの製造方法
Inoue et al. Application of dry etching to 1-Gb DRAM mask fabrication
JPS5915174B2 (ja) フオトマスクの製造方法
JPS5836494B2 (ja) シヤシンシヨツコクヨウホト マスクノセイゾウホウホウ
JPH06105677B2 (ja) パタ−ン形成方法
JPS61110427A (ja) パタ−ン形成方法
JPH09244211A (ja) ハーフトーン位相シフトフォトマスク用ブランク、ハーフトーン位相シフトフォトマスク及びその製造方法
KR100442968B1 (ko) 반도체소자의감광막형성방법
JPH03235947A (ja) 位相シフト層を有するフォトマスクおよびその製造方法
JPH03269533A (ja) フォトマスクの製造方法およびそれに使用する基板
JPH0353250A (ja) フォトマスクの製造方法
JPS63113457A (ja) パタ−ン反転方法