DE3375839D1 - Method of forming a resist mask resistant to plasma etching - Google Patents

Method of forming a resist mask resistant to plasma etching

Info

Publication number
DE3375839D1
DE3375839D1 DE8383200698T DE3375839T DE3375839D1 DE 3375839 D1 DE3375839 D1 DE 3375839D1 DE 8383200698 T DE8383200698 T DE 8383200698T DE 3375839 T DE3375839 T DE 3375839T DE 3375839 D1 DE3375839 D1 DE 3375839D1
Authority
DE
Germany
Prior art keywords
forming
plasma etching
resist mask
mask resistant
resistant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383200698T
Other languages
English (en)
Inventor
Joseph Meyer
David John Vinton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Koninklijke Philips NV
Original Assignee
Philips Electronic and Associated Industries Ltd
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd, Philips Gloeilampenfabrieken NV filed Critical Philips Electronic and Associated Industries Ltd
Application granted granted Critical
Publication of DE3375839D1 publication Critical patent/DE3375839D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE8383200698T 1982-05-26 1983-05-17 Method of forming a resist mask resistant to plasma etching Expired DE3375839D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08215432A GB2121198A (en) 1982-05-26 1982-05-26 Plasma-etch resistant mask formation

Publications (1)

Publication Number Publication Date
DE3375839D1 true DE3375839D1 (en) 1988-04-07

Family

ID=10530658

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383200698T Expired DE3375839D1 (en) 1982-05-26 1983-05-17 Method of forming a resist mask resistant to plasma etching

Country Status (5)

Country Link
US (1) US4504574A (de)
EP (1) EP0095212B1 (de)
JP (1) JPS59154A (de)
DE (1) DE3375839D1 (de)
GB (1) GB2121198A (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2121197A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
US4601778A (en) * 1985-02-25 1986-07-22 Motorola, Inc. Maskless etching of polysilicon
DE3682395D1 (de) * 1986-03-27 1991-12-12 Ibm Verfahren zur herstellung von seitenstrukturen.
JP2550982B2 (ja) * 1987-04-06 1996-11-06 富士通株式会社 レジストマスクの形成方法
US5545290A (en) * 1987-07-09 1996-08-13 Texas Instruments Incorporated Etching method
US4873176A (en) * 1987-08-28 1989-10-10 Shipley Company Inc. Reticulation resistant photoresist coating
US5912187A (en) * 1993-12-30 1999-06-15 Lucent Technologies Inc. Method of fabricating circuits
AU7124100A (en) 1999-09-10 2001-04-10 Unaxis Usa Inc. Magnetic pole fabrication process and device
US6547975B1 (en) 1999-10-29 2003-04-15 Unaxis Usa Inc. Magnetic pole fabrication process and device
US20030003374A1 (en) * 2001-06-15 2003-01-02 Applied Materials, Inc. Etch process for photolithographic reticle manufacturing with improved etch bias
US7183201B2 (en) 2001-07-23 2007-02-27 Applied Materials, Inc. Selective etching of organosilicate films over silicon oxide stop etch layers
WO2003021659A1 (en) 2001-09-04 2003-03-13 Applied Materials, Inc. Methods and apparatus for etching metal layers on substrates
WO2003089990A2 (en) * 2002-04-19 2003-10-30 Applied Materials, Inc. Process for etching photomasks
WO2004086143A2 (en) * 2003-03-21 2004-10-07 Applied Materials, Inc. Multi-step process for etching photomasks
US20040192058A1 (en) * 2003-03-28 2004-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-etching plasma treatment to form dual damascene with improved profile
US7077973B2 (en) * 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
KR100630677B1 (ko) * 2003-07-02 2006-10-02 삼성전자주식회사 포토레지스트 패턴에의 불소를 포함하지 않는 탄소 함유폴리머 생성을 위한 플라즈마 전처리를 포함하는 식각 방법
US7521000B2 (en) * 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
US8293430B2 (en) * 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
US7829243B2 (en) * 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
CN101046626B (zh) * 2006-03-30 2012-03-14 应用材料公司 适于制造光掩模的蚀刻钼层方法
KR100944846B1 (ko) * 2006-10-30 2010-03-04 어플라이드 머티어리얼스, 인코포레이티드 마스크 에칭 프로세스
US8507191B2 (en) 2011-01-07 2013-08-13 Micron Technology, Inc. Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253888A (en) * 1978-06-16 1981-03-03 Matsushita Electric Industrial Co., Ltd. Pretreatment of photoresist masking layers resulting in higher temperature device processing
US4187331A (en) * 1978-08-24 1980-02-05 International Business Machines Corp. Fluorine plasma resist image hardening
NL8004007A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
US4382985A (en) * 1980-10-11 1983-05-10 Daikin Kogyo Co., Ltd. Process for forming film of fluoroalkyl acrylate polymer on substrate and process for preparing patterned resist from the film
US4370405A (en) * 1981-03-30 1983-01-25 Hewlett-Packard Company Multilayer photoresist process utilizing an absorbant dye
US4373018A (en) * 1981-06-05 1983-02-08 Bell Telephone Laboratories, Incorporated Multiple exposure microlithography patterning method

Also Published As

Publication number Publication date
JPS59154A (ja) 1984-01-05
JPH0261736B2 (de) 1990-12-20
EP0095212A2 (de) 1983-11-30
US4504574A (en) 1985-03-12
GB2121198A (en) 1983-12-14
EP0095212A3 (en) 1985-01-16
EP0095212B1 (de) 1988-03-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee