JPH0259618B2 - - Google Patents
Info
- Publication number
- JPH0259618B2 JPH0259618B2 JP16146283A JP16146283A JPH0259618B2 JP H0259618 B2 JPH0259618 B2 JP H0259618B2 JP 16146283 A JP16146283 A JP 16146283A JP 16146283 A JP16146283 A JP 16146283A JP H0259618 B2 JPH0259618 B2 JP H0259618B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- etching
- conductor wiring
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 27
- 239000004020 conductor Substances 0.000 claims description 26
- 238000001020 plasma etching Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16146283A JPS6053051A (ja) | 1983-09-02 | 1983-09-02 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16146283A JPS6053051A (ja) | 1983-09-02 | 1983-09-02 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6053051A JPS6053051A (ja) | 1985-03-26 |
| JPH0259618B2 true JPH0259618B2 (de) | 1990-12-13 |
Family
ID=15735562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16146283A Granted JPS6053051A (ja) | 1983-09-02 | 1983-09-02 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6053051A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0889320A (ja) * | 1994-09-26 | 1996-04-09 | Masao Wakaizumi | ネックレス等の止め金具 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0821572B2 (ja) * | 1985-07-10 | 1996-03-04 | ソニー株式会社 | 半導体装置の製造方法 |
| US4789648A (en) * | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
| US4767724A (en) * | 1986-03-27 | 1988-08-30 | General Electric Company | Unframed via interconnection with dielectric etch stop |
| JPH1092810A (ja) * | 1996-09-10 | 1998-04-10 | Mitsubishi Electric Corp | 半導体装置 |
-
1983
- 1983-09-02 JP JP16146283A patent/JPS6053051A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0889320A (ja) * | 1994-09-26 | 1996-04-09 | Masao Wakaizumi | ネックレス等の止め金具 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6053051A (ja) | 1985-03-26 |
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