JPH0259451B2 - - Google Patents
Info
- Publication number
- JPH0259451B2 JPH0259451B2 JP57219131A JP21913182A JPH0259451B2 JP H0259451 B2 JPH0259451 B2 JP H0259451B2 JP 57219131 A JP57219131 A JP 57219131A JP 21913182 A JP21913182 A JP 21913182A JP H0259451 B2 JPH0259451 B2 JP H0259451B2
- Authority
- JP
- Japan
- Prior art keywords
- silver
- etching
- germanium selenide
- coating
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US346180 | 1982-02-05 | ||
| US06/346,180 US4368099A (en) | 1982-02-05 | 1982-02-05 | Development of germanium selenide photoresist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58137835A JPS58137835A (ja) | 1983-08-16 |
| JPH0259451B2 true JPH0259451B2 (enExample) | 1990-12-12 |
Family
ID=23358299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57219131A Granted JPS58137835A (ja) | 1982-02-05 | 1982-12-13 | 基板上のセレン化ゲルマニウムのレジスト層にパタンを形成する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4368099A (enExample) |
| JP (1) | JPS58137835A (enExample) |
| DE (1) | DE3246947A1 (enExample) |
| FR (1) | FR2521315B1 (enExample) |
| GB (1) | GB2114308B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0469536A (ja) * | 1990-07-10 | 1992-03-04 | Yokogawa Electric Corp | 差圧測定装置 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4506005A (en) * | 1983-05-10 | 1985-03-19 | Gca Corporation | Method of catalytic etching |
| JPH02283018A (ja) * | 1989-01-31 | 1990-11-20 | Matsushita Electric Ind Co Ltd | 半導体基体の処理方法及び半導体の製造方法 |
| JP3006048B2 (ja) * | 1990-07-27 | 2000-02-07 | ソニー株式会社 | ドライエッチング方法 |
| DE19641981C2 (de) * | 1996-10-11 | 2000-12-07 | A Benninghoven | Verfahren zur Bestimmung von Tiefenprofilen im Dünnschichtbereich |
| US6458647B1 (en) * | 2001-08-27 | 2002-10-01 | Infineon Technologies Ag | Process flow for sacrificial collar with poly mask |
| US6784018B2 (en) * | 2001-08-29 | 2004-08-31 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
| US7064080B2 (en) * | 2002-02-08 | 2006-06-20 | Micron Technology, Inc. | Semiconductor processing method using photoresist and an antireflective coating |
| US6825135B2 (en) * | 2002-06-06 | 2004-11-30 | Micron Technology, Inc. | Elimination of dendrite formation during metal/chalcogenide glass deposition |
| US6856002B2 (en) * | 2002-08-29 | 2005-02-15 | Micron Technology, Inc. | Graded GexSe100-x concentration in PCRAM |
| US7211296B2 (en) * | 2003-08-22 | 2007-05-01 | Battelle Memorial Institute | Chalcogenide glass nanostructures |
| DE102004047630A1 (de) * | 2004-09-30 | 2006-04-13 | Infineon Technologies Ag | Verfahren zur Herstellung eines CBRAM-Halbleiterspeichers |
| CN111433894A (zh) * | 2017-11-17 | 2020-07-17 | 三井化学株式会社 | 半导体元件中间体、含金属膜形成用组合物、半导体元件中间体的制造方法、半导体元件的制造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3707372A (en) * | 1968-02-19 | 1972-12-26 | Teeg Research Inc | Electromagnetic radiation sensitive elements |
| GB1529037A (en) * | 1976-06-08 | 1978-10-18 | Nippon Telegraph & Telephone | Image-forming materials having a radiation sensitive chalcogenide coating and a method of forming images with such materials |
| FR2376904A1 (fr) * | 1977-01-11 | 1978-08-04 | Alsthom Atlantique | Procede d'attaque d'une couche mince par decomposition d'un gaz dans un plasma |
| JPS5559723A (en) * | 1978-10-27 | 1980-05-06 | Hitachi Ltd | Plasma etching method |
| US4330384A (en) * | 1978-10-27 | 1982-05-18 | Hitachi, Ltd. | Process for plasma etching |
| JPS5565365A (en) * | 1978-11-07 | 1980-05-16 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming method |
| US4276368A (en) * | 1979-05-04 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Photoinduced migration of silver into chalcogenide layer |
-
1982
- 1982-02-05 US US06/346,180 patent/US4368099A/en not_active Expired - Fee Related
- 1982-12-07 FR FR8220462A patent/FR2521315B1/fr not_active Expired
- 1982-12-13 JP JP57219131A patent/JPS58137835A/ja active Granted
- 1982-12-18 DE DE19823246947 patent/DE3246947A1/de not_active Withdrawn
- 1982-12-20 GB GB08236164A patent/GB2114308B/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0469536A (ja) * | 1990-07-10 | 1992-03-04 | Yokogawa Electric Corp | 差圧測定装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2114308A (en) | 1983-08-17 |
| DE3246947A1 (de) | 1983-08-11 |
| GB2114308B (en) | 1985-06-19 |
| US4368099A (en) | 1983-01-11 |
| FR2521315A1 (fr) | 1983-08-12 |
| FR2521315B1 (fr) | 1989-11-24 |
| JPS58137835A (ja) | 1983-08-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4332879A (en) | Process for depositing a film of controlled composition using a metallo-organic photoresist | |
| US4320191A (en) | Pattern-forming process | |
| US4405710A (en) | Ion beam exposure of (g-Gex -Se1-x) inorganic resists | |
| US4094732A (en) | Silicon etching process | |
| US4600686A (en) | Method of forming a resist mask resistant to plasma etching | |
| JPH0259451B2 (enExample) | ||
| JPH0620062B2 (ja) | 半導体デバイスの製造方法 | |
| CA1124622A (en) | Etching method employing radiation | |
| US6136676A (en) | Semiconductor device manufacturing method | |
| JPH01214074A (ja) | 超伝導性酸化物材料薄膜の製造方法 | |
| US4783371A (en) | Photomask material | |
| US5759745A (en) | Method of using amorphous silicon as a photoresist | |
| EP0058214B1 (en) | Method for increasing the resistance of a solid material surface against etching | |
| JPH03174724A (ja) | パターン形成方法 | |
| JPS62218585A (ja) | フオトマスクの製造方法 | |
| JP3358808B2 (ja) | 基板から有機物質を灰化する方法 | |
| JPS6227384B2 (enExample) | ||
| JPS6227386B2 (enExample) | ||
| US3520687A (en) | Etching of silicon dioxide by photosensitive solutions | |
| JPS6376438A (ja) | パタ−ン形成方法 | |
| JPH0629968B2 (ja) | パタ−ン形成法 | |
| US3650744A (en) | Etching method using photopolymerizable vapors as the photoresist | |
| JPS646449B2 (enExample) | ||
| JPS6230624B2 (enExample) | ||
| US20250244675A1 (en) | Patterning method and patterning device |