JPH0258617B2 - - Google Patents

Info

Publication number
JPH0258617B2
JPH0258617B2 JP55091416A JP9141680A JPH0258617B2 JP H0258617 B2 JPH0258617 B2 JP H0258617B2 JP 55091416 A JP55091416 A JP 55091416A JP 9141680 A JP9141680 A JP 9141680A JP H0258617 B2 JPH0258617 B2 JP H0258617B2
Authority
JP
Japan
Prior art keywords
photoresist
resolution
molecular weight
sensitivity
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55091416A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5716446A (en
Inventor
Kazuo Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9141680A priority Critical patent/JPS5716446A/ja
Publication of JPS5716446A publication Critical patent/JPS5716446A/ja
Publication of JPH0258617B2 publication Critical patent/JPH0258617B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP9141680A 1980-07-04 1980-07-04 Formation of micropattern and photoresist used in said formation Granted JPS5716446A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9141680A JPS5716446A (en) 1980-07-04 1980-07-04 Formation of micropattern and photoresist used in said formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9141680A JPS5716446A (en) 1980-07-04 1980-07-04 Formation of micropattern and photoresist used in said formation

Publications (2)

Publication Number Publication Date
JPS5716446A JPS5716446A (en) 1982-01-27
JPH0258617B2 true JPH0258617B2 (OSRAM) 1990-12-10

Family

ID=14025763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9141680A Granted JPS5716446A (en) 1980-07-04 1980-07-04 Formation of micropattern and photoresist used in said formation

Country Status (1)

Country Link
JP (1) JPS5716446A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2531892B1 (de) * 2010-02-02 2016-01-27 Covestro Deutschland AG Verwendung einer photopolymer-formulierung mit triazin-basierten schreibmonomeren
JP6153631B2 (ja) * 2013-02-25 2017-06-28 コリア インスティチュート オブ インダストリアル テクノロジー アルコキシシリル基を有するエポキシ化合物、その製造方法、それを含む組成物と硬化物及びその用途
KR102003345B1 (ko) * 2017-04-28 2019-07-24 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
KR102232340B1 (ko) 2019-11-15 2021-03-26 한국생산기술연구원 알콕시실릴기를 갖는 에폭시 수지의 조성물 및 이의 복합체

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691229A (en) * 1979-12-26 1981-07-24 Fujitsu Ltd Pattern forming method

Also Published As

Publication number Publication date
JPS5716446A (en) 1982-01-27

Similar Documents

Publication Publication Date Title
US3801328A (en) Photopolymer printing plate and its production
EP0047184B1 (en) Radiation polymerizable composition for forming heat-resistant relief structures on electrical devices such as semiconductors and capacitors
US4416973A (en) Radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound
CA2037751A1 (en) Photopolymerizable mixture and recording material produced therefrom
EP0684522A1 (en) Visible radiation sensitive composition and recording material producible therefrom
US4454220A (en) Electrical device containing a radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound
JPH05265212A (ja) レジスト材料およびそれを用いるパターン形成方法
JP3228193B2 (ja) ネガ型フォトレジスト組成物及びそれを用いたパターン形成方法
US4430418A (en) Radiation-sensitive polyimide precursor composition derived from a diaryl fluoronated diamine compound
US5824452A (en) Resist compositions and process for the formation of resist patterns
US3387976A (en) Photopolymer and lithographic plates
JPH0258617B2 (OSRAM)
JPS5917414B2 (ja) スクリ−ン版用感光性組成物及び感光膜
US5733706A (en) Dry-developable positive resist
EP0084269B1 (en) Radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound
JPS62235943A (ja) リソグラフイ−法を利用した電子デバイスの製造方法
JPH0571605B2 (OSRAM)
US3725064A (en) Photosensitive propargyl polymer composition and method of using
JPS63271253A (ja) 高解像度ポジ型放射線感応性レジスト
EP0326315A2 (en) Photoresist compositions based on hydroxystyrene copolymers
JPH06214390A (ja) ネガ型感光性樹脂組成物およびそのパターン形成方法
JPH01224747A (ja) 光レジスト組成物
JPS60112035A (ja) 感光性ソルダ−レジスト
EP0538716A1 (en) Photosensitive polyimide precursor formulation
JP2809788B2 (ja) 感光性樹脂組成物