JPH0258617B2 - - Google Patents
Info
- Publication number
- JPH0258617B2 JPH0258617B2 JP55091416A JP9141680A JPH0258617B2 JP H0258617 B2 JPH0258617 B2 JP H0258617B2 JP 55091416 A JP55091416 A JP 55091416A JP 9141680 A JP9141680 A JP 9141680A JP H0258617 B2 JPH0258617 B2 JP H0258617B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- resolution
- molecular weight
- sensitivity
- polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9141680A JPS5716446A (en) | 1980-07-04 | 1980-07-04 | Formation of micropattern and photoresist used in said formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9141680A JPS5716446A (en) | 1980-07-04 | 1980-07-04 | Formation of micropattern and photoresist used in said formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5716446A JPS5716446A (en) | 1982-01-27 |
| JPH0258617B2 true JPH0258617B2 (OSRAM) | 1990-12-10 |
Family
ID=14025763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9141680A Granted JPS5716446A (en) | 1980-07-04 | 1980-07-04 | Formation of micropattern and photoresist used in said formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5716446A (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2531892B1 (de) * | 2010-02-02 | 2016-01-27 | Covestro Deutschland AG | Verwendung einer photopolymer-formulierung mit triazin-basierten schreibmonomeren |
| JP6153631B2 (ja) * | 2013-02-25 | 2017-06-28 | コリア インスティチュート オブ インダストリアル テクノロジー | アルコキシシリル基を有するエポキシ化合物、その製造方法、それを含む組成物と硬化物及びその用途 |
| KR102003345B1 (ko) * | 2017-04-28 | 2019-07-24 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
| KR102232340B1 (ko) | 2019-11-15 | 2021-03-26 | 한국생산기술연구원 | 알콕시실릴기를 갖는 에폭시 수지의 조성물 및 이의 복합체 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5691229A (en) * | 1979-12-26 | 1981-07-24 | Fujitsu Ltd | Pattern forming method |
-
1980
- 1980-07-04 JP JP9141680A patent/JPS5716446A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5716446A (en) | 1982-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3801328A (en) | Photopolymer printing plate and its production | |
| EP0047184B1 (en) | Radiation polymerizable composition for forming heat-resistant relief structures on electrical devices such as semiconductors and capacitors | |
| US4416973A (en) | Radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound | |
| CA2037751A1 (en) | Photopolymerizable mixture and recording material produced therefrom | |
| EP0684522A1 (en) | Visible radiation sensitive composition and recording material producible therefrom | |
| US4454220A (en) | Electrical device containing a radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound | |
| JPH05265212A (ja) | レジスト材料およびそれを用いるパターン形成方法 | |
| JP3228193B2 (ja) | ネガ型フォトレジスト組成物及びそれを用いたパターン形成方法 | |
| US4430418A (en) | Radiation-sensitive polyimide precursor composition derived from a diaryl fluoronated diamine compound | |
| US5824452A (en) | Resist compositions and process for the formation of resist patterns | |
| US3387976A (en) | Photopolymer and lithographic plates | |
| JPH0258617B2 (OSRAM) | ||
| JPS5917414B2 (ja) | スクリ−ン版用感光性組成物及び感光膜 | |
| US5733706A (en) | Dry-developable positive resist | |
| EP0084269B1 (en) | Radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound | |
| JPS62235943A (ja) | リソグラフイ−法を利用した電子デバイスの製造方法 | |
| JPH0571605B2 (OSRAM) | ||
| US3725064A (en) | Photosensitive propargyl polymer composition and method of using | |
| JPS63271253A (ja) | 高解像度ポジ型放射線感応性レジスト | |
| EP0326315A2 (en) | Photoresist compositions based on hydroxystyrene copolymers | |
| JPH06214390A (ja) | ネガ型感光性樹脂組成物およびそのパターン形成方法 | |
| JPH01224747A (ja) | 光レジスト組成物 | |
| JPS60112035A (ja) | 感光性ソルダ−レジスト | |
| EP0538716A1 (en) | Photosensitive polyimide precursor formulation | |
| JP2809788B2 (ja) | 感光性樹脂組成物 |