JPH0258349U - - Google Patents
Info
- Publication number
- JPH0258349U JPH0258349U JP13714388U JP13714388U JPH0258349U JP H0258349 U JPH0258349 U JP H0258349U JP 13714388 U JP13714388 U JP 13714388U JP 13714388 U JP13714388 U JP 13714388U JP H0258349 U JPH0258349 U JP H0258349U
- Authority
- JP
- Japan
- Prior art keywords
- floating gate
- gate
- different
- floating
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
第１図は一実施例を示す平面図、第２図は第１
図のＡ―Ａ′線位置での断面図である。
２……シリコン基板、６，８……活性領域、１
０……ゲート酸化膜、１２，１４……フローテイ
ングゲート、２０，２２……トンネル酸化膜。
FIG. 1 is a plan view showing one embodiment, and FIG. 2 is a plan view showing one embodiment.
FIG. 3 is a sectional view taken along line AA' in the figure. 2... Silicon substrate, 6, 8... Active region, 1
0... Gate oxide film, 12, 14... Floating gate, 20, 22... Tunnel oxide film.
Claims (1)
おいて、フローテイングゲートがチヤネル領域上
で分割されており、これらのフローテイングゲー
トのトンネル酸化膜領域は互いに異なる活性領域
上に設けられており、かつ、これらのフローテイ
ングゲートの面積とチヤネル幅の少なくとも一方
が互いに異なつている不揮発性半導体メモリ装置
。 In an EEPROM with a floating gate, the floating gate is divided on a channel region, and the tunnel oxide film regions of these floating gates are provided on different active regions, and A nonvolatile semiconductor memory device in which at least one of gate area and channel width is different from each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988137143U JPH0723959Y2 (en) | 1988-10-20 | 1988-10-20 | Nonvolatile semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988137143U JPH0723959Y2 (en) | 1988-10-20 | 1988-10-20 | Nonvolatile semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0258349U true JPH0258349U (en) | 1990-04-26 |
| JPH0723959Y2 JPH0723959Y2 (en) | 1995-05-31 |
Family
ID=31398301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988137143U Expired - Lifetime JPH0723959Y2 (en) | 1988-10-20 | 1988-10-20 | Nonvolatile semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0723959Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60169172A (en) * | 1984-02-13 | 1985-09-02 | Toshiba Corp | Insulating gate type field effect transistor |
| JPS6294987A (en) * | 1985-10-21 | 1987-05-01 | Nec Corp | Mis field effect semiconductor device and detecting method for information thereof |
-
1988
- 1988-10-20 JP JP1988137143U patent/JPH0723959Y2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60169172A (en) * | 1984-02-13 | 1985-09-02 | Toshiba Corp | Insulating gate type field effect transistor |
| JPS6294987A (en) * | 1985-10-21 | 1987-05-01 | Nec Corp | Mis field effect semiconductor device and detecting method for information thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0723959Y2 (en) | 1995-05-31 |
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