JPH0258348U - - Google Patents
Info
- Publication number
- JPH0258348U JPH0258348U JP13714288U JP13714288U JPH0258348U JP H0258348 U JPH0258348 U JP H0258348U JP 13714288 U JP13714288 U JP 13714288U JP 13714288 U JP13714288 U JP 13714288U JP H0258348 U JPH0258348 U JP H0258348U
- Authority
- JP
- Japan
- Prior art keywords
- gate
- floating gate
- sidewall floating
- control gate
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
第１図は一実施例を示す断面図、第２図Ａから
同図Ｇは一実施例を製造する方法を示す断面図、
第３図は従来の側壁フローテイングゲート型ＥＰ
ＲＯＭを示す断面図、第４図Ａから同図Ｆはその
従来のＥＰＲＯＭを製造する方法を示す断面図で
ある。
１……シリコン基板、３，４……ソース・ドレ
イン、３ａ……重なり領域、５……ゲート酸化膜
、６……コントロールゲート、７……シリコン酸
化膜、２０……側壁フローテイングゲート、２７
……側壁フローテイングゲートの厚さの厚い部分
、２４……側壁フローテイングゲートの厚さの薄
い部分。
FIG. 1 is a sectional view showing one embodiment; FIGS. 2A to 2G are sectional views showing a method of manufacturing the embodiment;
Figure 3 shows a conventional side wall floating gate type EP.
4A to 4F are cross-sectional views showing a conventional EPROM manufacturing method. DESCRIPTION OF SYMBOLS 1...Silicon substrate, 3, 4...Source/drain, 3a...Overlapping region, 5...Gate oxide film, 6...Control gate, 7...Silicon oxide film, 20...Side wall floating gate, 27
...Thick part of the side wall floating gate, 24... Thin part of the side wall floating gate.
Claims (1)
して側壁フローテイングゲートが設けられている
半導体装置において、前記側壁フローテイングゲ
ートはコントロールゲートに近い部分でイオン注
入の不純物が透過しない厚さをもち、コントロー
ルゲートから遠い部分でイオン注入の不純物が透
過する厚さをもち、前記側壁フローテイングゲー
トの厚さの薄い部分の下側の基板には注入された
不純物領域が存在していることを特徴とする側壁
フローテイングゲート型半導体装置。 In a semiconductor device in which a sidewall floating gate is provided on one side of a control gate with an insulating film interposed therebetween, the sidewall floating gate has a thickness that prevents impurities from ion implantation from penetrating the portion near the control gate, and controls the control gate. A portion far from the gate has a thickness that allows ion-implanted impurities to pass through, and an implanted impurity region exists in the substrate below the thinner portion of the sidewall floating gate. Sidewall floating gate type semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13714288U JPH0258348U (en) | 1988-10-20 | 1988-10-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13714288U JPH0258348U (en) | 1988-10-20 | 1988-10-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0258348U true JPH0258348U (en) | 1990-04-26 |
Family
ID=31398299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13714288U Pending JPH0258348U (en) | 1988-10-20 | 1988-10-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0258348U (en) |
-
1988
- 1988-10-20 JP JP13714288U patent/JPH0258348U/ja active Pending