JPH0256462U - - Google Patents

Info

Publication number
JPH0256462U
JPH0256462U JP13546088U JP13546088U JPH0256462U JP H0256462 U JPH0256462 U JP H0256462U JP 13546088 U JP13546088 U JP 13546088U JP 13546088 U JP13546088 U JP 13546088U JP H0256462 U JPH0256462 U JP H0256462U
Authority
JP
Japan
Prior art keywords
semiconductor layer
thin film
drain electrode
film transistor
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13546088U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0747876Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988135460U priority Critical patent/JPH0747876Y2/ja
Publication of JPH0256462U publication Critical patent/JPH0256462U/ja
Application granted granted Critical
Publication of JPH0747876Y2 publication Critical patent/JPH0747876Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
JP1988135460U 1988-10-19 1988-10-19 薄膜トラジスタ Expired - Lifetime JPH0747876Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988135460U JPH0747876Y2 (ja) 1988-10-19 1988-10-19 薄膜トラジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988135460U JPH0747876Y2 (ja) 1988-10-19 1988-10-19 薄膜トラジスタ

Publications (2)

Publication Number Publication Date
JPH0256462U true JPH0256462U (cs) 1990-04-24
JPH0747876Y2 JPH0747876Y2 (ja) 1995-11-01

Family

ID=31395107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988135460U Expired - Lifetime JPH0747876Y2 (ja) 1988-10-19 1988-10-19 薄膜トラジスタ

Country Status (1)

Country Link
JP (1) JPH0747876Y2 (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009231821A (ja) * 2008-02-29 2009-10-08 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び表示装置
JP2009239263A (ja) * 2008-03-01 2009-10-15 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び表示装置
JP2010199566A (ja) * 2009-01-30 2010-09-09 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US8558236B2 (en) 2007-12-03 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2018509761A (ja) * 2015-05-11 2018-04-05 深▲セン▼市華星光電技術有限公司 共平面型酸化物半導体ｔｆｔ基板構造及びその製作方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235569A (ja) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Ｍｉｓ型トランジスタ及びその製造方法
JPS63258072A (ja) * 1987-04-15 1988-10-25 Nec Corp 電界効果トランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235569A (ja) * 1985-08-09 1987-02-16 Agency Of Ind Science & Technol Ｍｉｓ型トランジスタ及びその製造方法
JPS63258072A (ja) * 1987-04-15 1988-10-25 Nec Corp 電界効果トランジスタ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8558236B2 (en) 2007-12-03 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2009231821A (ja) * 2008-02-29 2009-10-08 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び表示装置
JP2009239263A (ja) * 2008-03-01 2009-10-15 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ及び表示装置
JP2010199566A (ja) * 2009-01-30 2010-09-09 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2018509761A (ja) * 2015-05-11 2018-04-05 深▲セン▼市華星光電技術有限公司 共平面型酸化物半導体ｔｆｔ基板構造及びその製作方法

Also Published As

Publication number Publication date
JPH0747876Y2 (ja) 1995-11-01

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