JPH0254596A - 半導体レーザ - Google Patents

半導体レーザ

Info

Publication number
JPH0254596A
JPH0254596A JP63205575A JP20557588A JPH0254596A JP H0254596 A JPH0254596 A JP H0254596A JP 63205575 A JP63205575 A JP 63205575A JP 20557588 A JP20557588 A JP 20557588A JP H0254596 A JPH0254596 A JP H0254596A
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
lower cladding
current blocking
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63205575A
Other languages
English (en)
Japanese (ja)
Inventor
Akira Hattori
亮 服部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63205575A priority Critical patent/JPH0254596A/ja
Priority to US07/394,059 priority patent/US4926432A/en
Priority to DE3927023A priority patent/DE3927023A1/de
Priority to NL8902095A priority patent/NL8902095A/nl
Publication of JPH0254596A publication Critical patent/JPH0254596A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H01S5/2235—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface with a protrusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP63205575A 1988-08-18 1988-08-18 半導体レーザ Pending JPH0254596A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63205575A JPH0254596A (ja) 1988-08-18 1988-08-18 半導体レーザ
US07/394,059 US4926432A (en) 1988-08-18 1989-08-14 Semiconductor laser device
DE3927023A DE3927023A1 (de) 1988-08-18 1989-08-16 Halbleiterlaser
NL8902095A NL8902095A (nl) 1988-08-18 1989-08-18 Een halfgeleiderlaserinrichting.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63205575A JPH0254596A (ja) 1988-08-18 1988-08-18 半導体レーザ

Publications (1)

Publication Number Publication Date
JPH0254596A true JPH0254596A (ja) 1990-02-23

Family

ID=16509158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63205575A Pending JPH0254596A (ja) 1988-08-18 1988-08-18 半導体レーザ

Country Status (4)

Country Link
US (1) US4926432A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH0254596A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3927023A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL8902095A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126283A (ja) * 1989-10-11 1991-05-29 Toshiba Corp 窓構造半導体レーザ素子の製造方法
JPH04352374A (ja) * 1991-05-29 1992-12-07 Eastman Kodak Japan Kk 半導体発光装置
KR940011273B1 (ko) * 1992-04-03 1994-12-03 주식회사 금성사 레이저 다이오드의 구조
US6563852B1 (en) * 2000-05-08 2003-05-13 Lucent Technologies Inc. Self-mode-locking quantum cascade laser

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167488A (ja) * 1984-02-10 1985-08-30 Hitachi Ltd 半導体レ−ザ装置
JPS6242591A (ja) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JPS6276691A (ja) * 1985-09-30 1987-04-08 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置の製造方法

Also Published As

Publication number Publication date
NL8902095A (nl) 1990-03-16
US4926432A (en) 1990-05-15
DE3927023C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-06-13
DE3927023A1 (de) 1990-03-01

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