JPH0252461A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0252461A
JPH0252461A JP63205343A JP20534388A JPH0252461A JP H0252461 A JPH0252461 A JP H0252461A JP 63205343 A JP63205343 A JP 63205343A JP 20534388 A JP20534388 A JP 20534388A JP H0252461 A JPH0252461 A JP H0252461A
Authority
JP
Japan
Prior art keywords
test
signal
terminals
internal circuit
during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63205343A
Other languages
Japanese (ja)
Inventor
Yutaka Onda
恩田 豊
Junko Otsuka
大塚 淳子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP63205343A priority Critical patent/JPH0252461A/en
Publication of JPH0252461A publication Critical patent/JPH0252461A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make a testing operation at a low cost and to simply operate it when a dynamic BT is executed by a constitution wherein, during a test, individual test pattern signals are supplied to individual signal input ends of an internal circuit by using a test control signal. CONSTITUTION:Terminals Tc, T1 to Tm of a test signal generation circuit are connected to individual signal input ends of an internal circuit 2. Gate transistors Q1 to Qm become in a conducting state during a test by means of a test control signal TC; individual test pattern signals from a test signal generation circuit 1 are supplied individually to the terminals T1 to Tm correspondingly. During a normal operation, gate transistors Q0, Q1 to Qm become in a nonconducting state; the test signal generation circuit 1 is separated from the internal circuit 2 and the terminals Tc, T1 to Tm. Accordingly, during a dynamic BT it is possible to test the internal circuit 2 only by supplying a clock signal CK and the test control signal TC from the outside (a testing apparatus).

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置に関し、特にバーンインテストを効
果的に実施できる様に設計された半導体装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to a semiconductor device designed so that burn-in tests can be performed effectively.

〔従来の技術〕[Conventional technology]

従来、半導体装置の品質保証のためのバーンインテスト
(以降はBTという)には、一定時間、高温炉内で一定
の電圧を印加するスタティックBTと、半導体装置の内
部回路を動作させながら一定時間、高温炉内で一定の電
圧を印加するダイナミックBTの2種類があり、半導体
装置内部の大部分の素子に信号電圧を印加することがで
きることから、ダイナミックBTがスタティックBTよ
りBT効果が高いとされている。
Traditionally, burn-in tests (hereinafter referred to as BT) for quality assurance of semiconductor devices have been conducted using static BT, which applies a certain voltage in a high-temperature furnace for a certain period of time, and tests that apply a certain voltage for a certain period of time while operating the internal circuits of the semiconductor device. There are two types of dynamic BTs that apply a constant voltage in a high-temperature furnace, and dynamic BTs are said to have a higher BT effect than static BTs because signal voltages can be applied to most of the elements inside a semiconductor device. There is.

第2図は従来の半導体装置のダイナミックBTを実施す
るときの試験装置との接続図である。
FIG. 2 is a connection diagram with a test equipment when performing dynamic BT of a conventional semiconductor device.

従来の半導体装置10においては、ダイナミックBTを
実施する場合、第2図に示すように、内部回路2を動作
させるためには多数のテストパターン信号が必要であり
、このため、これら多数のテストパターン信号を、BT
炉とテストパターン信号発生装置とを備えた専用の試験
装置20がら外部回路接続用の端子T、、To、Tl〜
T7を介して供給する構成となっていた。
In the conventional semiconductor device 10, when performing dynamic BT, a large number of test pattern signals are required to operate the internal circuit 2, as shown in FIG. Signal, BT
A dedicated testing device 20 equipped with a furnace and a test pattern signal generator includes terminals T, , To, Tl for connecting external circuits.
The configuration was such that it was supplied via T7.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体装置10は、ダイナミックBTを
実施する場合、内部回路2を動作させるために多数のテ
ストパターン信号を発生する専用の試験装置20を必要
とする構成となっているので、BT効果は大きいが試験
装置20等を含む製造コストが高くなるという欠点があ
る。
The conventional semiconductor device 10 described above has a configuration that requires a dedicated test device 20 that generates a large number of test pattern signals in order to operate the internal circuit 2 when performing dynamic BT. Although it is large, it has the disadvantage that the manufacturing cost including the testing device 20 etc. is high.

本発明の目的は、試験装置のコストを安価にして製造コ
ストを低減することができ、かつ十分な品質保証ができ
る半導体装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device that can reduce manufacturing costs by reducing the cost of a test device and can provide sufficient quality assurance.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置は、内部回路の複数の信号入力端と
それぞれ対応して接続する外部回路接続用の複数の端子
と、クロック信号を入力して所定の複数のテストパター
ン信号を出力するテスト信号発生回路と、テスト制御信
号により前記各テストパターン信号を前記各端子にそれ
ぞれ対応して伝達する複数ゲート回路とを有している。
The semiconductor device of the present invention includes a plurality of terminals for external circuit connection that are respectively connected to a plurality of signal input terminals of an internal circuit, and a test signal that inputs a clock signal and outputs a plurality of predetermined test pattern signals. It has a generation circuit and a plurality of gate circuits that transmit each of the test pattern signals to each of the terminals in response to a test control signal.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例を示す回路図である。FIG. 1 is a circuit diagram showing one embodiment of the present invention.

テスト信号発生回路1は、テスト制御信号TCによりテ
スト時にグートランジスタQ。が導通状態となると、端
子Tcからクロック信号CKを入力して所定の複数のテ
ストパターン信号を出力する。
The test signal generation circuit 1 generates a goo transistor Q during a test using a test control signal TC. When it becomes conductive, it inputs the clock signal CK from the terminal Tc and outputs a plurality of predetermined test pattern signals.

内部回路2は、複数の組合せ回路21A、21θ、複数
のフリップフロップ22(第1図においてはF/Fと略
記)及びスイッチ回路SIO〜S、−,S2o〜S2m
を含み所定の機能を有している。この実施例においては
、スキャンパス回路の構成となっている。
The internal circuit 2 includes a plurality of combinational circuits 21A, 21θ, a plurality of flip-flops 22 (abbreviated as F/F in FIG. 1), and switch circuits SIO to S, -, S2o to S2m.
It has a predetermined function. This embodiment has a scan path circuit configuration.

端子T。、T、〜T1はそれぞれ内部回路2の各信号入
力端と接続し、通常動作時に、内部回路2へ外部回路か
らクロック信号CK及び各種信号■1〜■、を供給する
Terminal T. .

ゲートトランジスタロ1〜Qヨはテスト制御信号TCに
よりテスト時に導通状態となり、テスト信号発生回路1
からの各テストパターン信号をそれぞれ対応して端子T
1〜T、へ伝達する。即ち、内部回路2の各信号入力端
へそれぞれテストパターン信号を供給する。
Gate transistors RO 1 to Q YO become conductive during testing by test control signal TC, and test signal generation circuit 1
Each test pattern signal from
1 to T. That is, test pattern signals are supplied to each signal input terminal of the internal circuit 2, respectively.

通常動作時には、ゲートトランジスタQo。During normal operation, the gate transistor Qo.

Q+〜Q□はテスト制御信号TCにより非導通状態とな
り、テスト信号発生回路1は内部回路2及び端子To、
T、〜T、nから切離される。
Q+ to Q□ are rendered non-conductive by the test control signal TC, and the test signal generation circuit 1 is connected to the internal circuit 2 and the terminals To,
T, ~T, separated from n.

従って、ダイナミックBT時、外部(試験装置)からク
ロック信号CK及びテスト制御信号TCを供給するだけ
で、内部回路2のテストを実施するとかできるので、ダ
イナミックBTのための試験装置のテストパターン信号
発生装置を大幅に簡略化することができ、試験装置が安
価になると共に試験の操作が簡単になり、製造コストを
低減することができる。しかも、テスト信号発生回路1
から発生するテストパターン信号により、十分品質保証
することができる。
Therefore, during dynamic BT, it is possible to test the internal circuit 2 by simply supplying the clock signal CK and test control signal TC from the outside (testing equipment), so the test pattern signal generation for the testing equipment for dynamic BT is possible. The apparatus can be greatly simplified, the test apparatus becomes inexpensive, the test operation becomes simple, and the manufacturing cost can be reduced. Moreover, the test signal generation circuit 1
The test pattern signal generated from the test pattern signal can sufficiently guarantee quality.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、クロック信号を入力して
複数のテストパターン信号を発生するテス信号発生回路
を設け、テスト時、テスト制御信号によりこれら各テス
トパターン信号を内部回路の各信号入力端へ供給する構
成とすることにより、ダイナミックBTの実施に当り、
試験装置を安価にすることができまた操作も簡単になる
ので、製造コストを低減することができ、かつ十分な品
質保証をすることができる効果がある。
As explained above, the present invention provides a test signal generation circuit that inputs a clock signal and generates a plurality of test pattern signals, and during a test, each test pattern signal is transmitted to each signal input terminal of an internal circuit by a test control signal. When implementing dynamic BT, by configuring the supply to
Since the test equipment can be made inexpensive and easy to operate, manufacturing costs can be reduced and quality can be ensured sufficiently.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す回路図、第2図は従来
の半導体装置の一例を説明するための半導体装置と試験
装置との接続図である。 ■・・・テスト信号発生回路、2・・・内部回路、10
・・・半導体装置、20・・・試験装置、21A、21
B・・・組合せ回路、22・・・フリップフロップ、Q
。 Q t 〜Q −−ゲートトランジスタ、Slo〜S1
.、、。 320〜32m”・スイッチ回路、’r、、’ro、T
、 〜T、、T、、、T□00.端子。 代pr、l、 jt−理工 内 原  ヱイ。
FIG. 1 is a circuit diagram showing an embodiment of the present invention, and FIG. 2 is a connection diagram of a semiconductor device and a test device for explaining an example of a conventional semiconductor device. ■...Test signal generation circuit, 2...Internal circuit, 10
...Semiconductor device, 20...Testing device, 21A, 21
B...Combination circuit, 22...Flip-flop, Q
. Q t ~Q ---gate transistor, Slo ~ S1
.. ,,. 320~32m"・Switch circuit, 'r,,'ro, T
, ~T,,T,,,T□00. terminal. Pr, L, JT-Science and Engineering Uchihara Ei.

Claims (1)

【特許請求の範囲】[Claims] 内部回路の複数の信号入力端とそれぞれ対応して接続す
る外部回路接続用の複数の端子と、クロック信号を入力
して所定の複数のテストパターン信号を出力するテスト
信号発生回路と、テスト制御信号により前記各テストパ
ターン信号を前記各端子にそれぞれ対応して伝達する複
数ゲート回路とを有することを特徴する半導体装置。
A plurality of terminals for external circuit connection that are respectively connected to the plurality of signal input terminals of the internal circuit, a test signal generation circuit that inputs a clock signal and outputs a plurality of predetermined test pattern signals, and a test control signal. and a plurality of gate circuits configured to transmit each of the test pattern signals to each of the terminals in a corresponding manner.
JP63205343A 1988-08-17 1988-08-17 Semiconductor device Pending JPH0252461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63205343A JPH0252461A (en) 1988-08-17 1988-08-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63205343A JPH0252461A (en) 1988-08-17 1988-08-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0252461A true JPH0252461A (en) 1990-02-22

Family

ID=16505324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63205343A Pending JPH0252461A (en) 1988-08-17 1988-08-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0252461A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100737918B1 (en) * 2001-01-30 2007-07-12 삼성전자주식회사 Wafer level burn-in tester having waveform monitoring unit and testing method using thereof
JP2007266204A (en) * 2006-03-28 2007-10-11 Denki Kagaku Kogyo Kk Metal-base circuit board and manufacturing method thereof, and led module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745942A (en) * 1980-09-02 1982-03-16 Toshiba Corp Semiconductor integrated circuit device
JPS60170946A (en) * 1984-02-16 1985-09-04 Nec Corp Semiconductor integrated circuit
JPS6316276A (en) * 1986-07-08 1988-01-23 Fujitsu Ltd Semiconductor integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745942A (en) * 1980-09-02 1982-03-16 Toshiba Corp Semiconductor integrated circuit device
JPS60170946A (en) * 1984-02-16 1985-09-04 Nec Corp Semiconductor integrated circuit
JPS6316276A (en) * 1986-07-08 1988-01-23 Fujitsu Ltd Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100737918B1 (en) * 2001-01-30 2007-07-12 삼성전자주식회사 Wafer level burn-in tester having waveform monitoring unit and testing method using thereof
JP2007266204A (en) * 2006-03-28 2007-10-11 Denki Kagaku Kogyo Kk Metal-base circuit board and manufacturing method thereof, and led module

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