JPH0250627B2 - - Google Patents

Info

Publication number
JPH0250627B2
JPH0250627B2 JP57188554A JP18855482A JPH0250627B2 JP H0250627 B2 JPH0250627 B2 JP H0250627B2 JP 57188554 A JP57188554 A JP 57188554A JP 18855482 A JP18855482 A JP 18855482A JP H0250627 B2 JPH0250627 B2 JP H0250627B2
Authority
JP
Japan
Prior art keywords
power supply
mos transistor
region
channel
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57188554A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5976446A (ja
Inventor
Teruo Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57188554A priority Critical patent/JPS5976446A/ja
Publication of JPS5976446A publication Critical patent/JPS5976446A/ja
Publication of JPH0250627B2 publication Critical patent/JPH0250627B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57188554A 1982-10-25 1982-10-25 相補形ｍｏｓ集積回路装置 Granted JPS5976446A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57188554A JPS5976446A (ja) 1982-10-25 1982-10-25 相補形ｍｏｓ集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57188554A JPS5976446A (ja) 1982-10-25 1982-10-25 相補形ｍｏｓ集積回路装置

Publications (2)

Publication Number Publication Date
JPS5976446A JPS5976446A (ja) 1984-05-01
JPH0250627B2 true JPH0250627B2 (enrdf_load_stackoverflow) 1990-11-02

Family

ID=16225724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57188554A Granted JPS5976446A (ja) 1982-10-25 1982-10-25 相補形ｍｏｓ集積回路装置

Country Status (1)

Country Link
JP (1) JPS5976446A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195320A (ja) * 2009-07-29 2012-10-11 Panasonic Corp 半導体装置

Also Published As

Publication number Publication date
JPS5976446A (ja) 1984-05-01

Similar Documents

Publication Publication Date Title
EP0098163B1 (en) Gate-array chip
TWI656622B (zh) 積體電路佈局結構
US6590802B2 (en) Semiconductor storage apparatus
EP0177336B1 (en) Gate array integrated device
JPH0318348B2 (enrdf_load_stackoverflow)
US5378941A (en) Bipolar transistor MOS transistor hybrid semiconductor integrated circuit device
JPH0786430A (ja) 半導体装置およびその製造方法
US4799101A (en) Substrate bias through polysilicon line
JP3780003B2 (ja) 半導体集積回路装置
KR980012556A (ko) 단일 레벨 상의 각각의 상보형 데이타 라인의 양 측면 상에 Vcc와 Vss 버스를 포함하는 전 CMOS SRAM 셀
JPH02152254A (ja) 半導体集積回路装置
KR900003029B1 (ko) 칩을 갖는 집적회로 장치
JP3115787B2 (ja) ポリセル集積回路
US4825273A (en) Semiconductor integrated circuit device
US5066996A (en) Channelless gate array with a shared bipolar transistor
EP0119059B1 (en) Semiconductor integrated circuit with gate-array arrangement
JPH0250627B2 (enrdf_load_stackoverflow)
JPH0252428B2 (enrdf_load_stackoverflow)
JP3532751B2 (ja) 混在型半導体集積回路装置及びその製造方法
JPH06101551B2 (ja) Ｃｍｏｓ集積回路装置
JPS5844592Y2 (ja) 半導体集積回路装置
GB2098799A (en) Multi-level interconnection system for integrated circuits
EP0113828A2 (en) Master slice semiconductor chip having a new multi-function FET cell
JP3128086B2 (ja) ゲートアレイの基本セル
JPS5972742A (ja) マスタスライスｌｓｉのマスタ方法