JPH0245629U - - Google Patents

Info

Publication number
JPH0245629U
JPH0245629U JP12498388U JP12498388U JPH0245629U JP H0245629 U JPH0245629 U JP H0245629U JP 12498388 U JP12498388 U JP 12498388U JP 12498388 U JP12498388 U JP 12498388U JP H0245629 U JPH0245629 U JP H0245629U
Authority
JP
Japan
Prior art keywords
gas injection
reactive ion
ion etching
chamber
cylindrical portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12498388U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12498388U priority Critical patent/JPH0245629U/ja
Publication of JPH0245629U publication Critical patent/JPH0245629U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP12498388U 1988-09-22 1988-09-22 Pending JPH0245629U (OSRAM)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12498388U JPH0245629U (OSRAM) 1988-09-22 1988-09-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12498388U JPH0245629U (OSRAM) 1988-09-22 1988-09-22

Publications (1)

Publication Number Publication Date
JPH0245629U true JPH0245629U (OSRAM) 1990-03-29

Family

ID=31375186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12498388U Pending JPH0245629U (OSRAM) 1988-09-22 1988-09-22

Country Status (1)

Country Link
JP (1) JPH0245629U (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998046808A1 (fr) * 1997-04-11 1998-10-22 Tokyo Electron Limited Processeur

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046029A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体製造装置
JPS60123033A (ja) * 1983-12-07 1985-07-01 Hitachi Ltd プラズマ処理装置
JPS61226925A (ja) * 1985-04-01 1986-10-08 Anelva Corp 放電反応装置
JPS62299031A (ja) * 1986-06-18 1987-12-26 Nec Corp 平行平板型エツチング装置の電極構造
JPS6317529A (ja) * 1986-07-09 1988-01-25 Toshiba Corp エツチング装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046029A (ja) * 1983-08-24 1985-03-12 Hitachi Ltd 半導体製造装置
JPS60123033A (ja) * 1983-12-07 1985-07-01 Hitachi Ltd プラズマ処理装置
JPS61226925A (ja) * 1985-04-01 1986-10-08 Anelva Corp 放電反応装置
JPS62299031A (ja) * 1986-06-18 1987-12-26 Nec Corp 平行平板型エツチング装置の電極構造
JPS6317529A (ja) * 1986-07-09 1988-01-25 Toshiba Corp エツチング装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998046808A1 (fr) * 1997-04-11 1998-10-22 Tokyo Electron Limited Processeur
KR100469047B1 (ko) * 1997-04-11 2005-01-31 동경 엘렉트론 주식회사 처리장치, 상부전극유니트와 그 사용방법 및 전극유니트와 그 제조방법

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