JPH024559B2 - - Google Patents
Info
- Publication number
- JPH024559B2 JPH024559B2 JP4859481A JP4859481A JPH024559B2 JP H024559 B2 JPH024559 B2 JP H024559B2 JP 4859481 A JP4859481 A JP 4859481A JP 4859481 A JP4859481 A JP 4859481A JP H024559 B2 JPH024559 B2 JP H024559B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- single crystal
- polycrystalline
- wafer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4859481A JPS57166397A (en) | 1981-03-31 | 1981-03-31 | Converting method of silicon wafer into single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4859481A JPS57166397A (en) | 1981-03-31 | 1981-03-31 | Converting method of silicon wafer into single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57166397A JPS57166397A (en) | 1982-10-13 |
JPH024559B2 true JPH024559B2 (enrdf_load_stackoverflow) | 1990-01-29 |
Family
ID=12807727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4859481A Granted JPS57166397A (en) | 1981-03-31 | 1981-03-31 | Converting method of silicon wafer into single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57166397A (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6090898A (ja) * | 1983-10-21 | 1985-05-22 | Agency Of Ind Science & Technol | 単結晶シリコン膜形成法 |
JPS62130509A (ja) * | 1985-12-02 | 1987-06-12 | Agency Of Ind Science & Technol | 半導体基体の製造方法 |
JPH0282518A (ja) * | 1988-09-20 | 1990-03-23 | Agency Of Ind Science & Technol | 半導体単結晶層の製造方法 |
-
1981
- 1981-03-31 JP JP4859481A patent/JPS57166397A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57166397A (en) | 1982-10-13 |
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