JPH024143B2 - - Google Patents

Info

Publication number
JPH024143B2
JPH024143B2 JP57034301A JP3430182A JPH024143B2 JP H024143 B2 JPH024143 B2 JP H024143B2 JP 57034301 A JP57034301 A JP 57034301A JP 3430182 A JP3430182 A JP 3430182A JP H024143 B2 JPH024143 B2 JP H024143B2
Authority
JP
Japan
Prior art keywords
copper
solder
aluminum
copper foil
zinc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57034301A
Other languages
English (en)
Other versions
JPS58151039A (ja
Inventor
Tatsuo Nakano
Kazuo Kato
Shinichiro Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP57034301A priority Critical patent/JPS58151039A/ja
Publication of JPS58151039A publication Critical patent/JPS58151039A/ja
Publication of JPH024143B2 publication Critical patent/JPH024143B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 本発明は、アルミニウムリード細線の超音波振
動固着性にすぐれた、亜鉛又は亜鉛及びニツケル
を介してメツキ積層されたアルミニウムと銅との
複合小片を積層した混成集積回路基板に関する。
従来の混成集積回路に於ては、セラミツクス等
の絶縁基板上に抵抗体やトランジスターの如き回
路部品を付着したものであつた。斯る構造では、
熱放散が悪く、特に、大電流を流すように設計さ
れた抵抗体やトランジスターを組み込むことは損
傷の恐れがあり、不可能とされていた。しかし、
特公昭46−13234号公報などで金属板上に絶縁層
を設け導電路を導電塗料の焼成によつて形成させ
熱放散の問題は解決された。
しかし、導電路が塗料の焼成によるので、幾ら
かの抵抗を有し、細い導電路で集積度を上げると
かなりの問題となつてくる。
また、この導電路の抵抗を除去するため、金属
板上に絶縁層を介して銅箔を接着し導電路や電極
部分等を残し、エツチングすることで導電路及び
電極部を形成させる方法が、特開昭51−28662号
公報で開示されている。
しかし、例えば、トランジスターを電極板上に
ハンダで固着し、トランジスターの所望の電極を
アルミニウム細線で取り出し、銅箔で構成される
リードに超音波振動法で直接固着することは不可
能である。
そこで、アルミニウムの如き超音波振動法で良
好な固着性を有する小片を導電性接着剤を介して
接着してもよいが、この方法では、導電性接着剤
の抵抗のバラツキや抵抗の経時変化は避けること
が出来ない等の欠点を有している。また、特開昭
51−28662号公報では、アルミニウムを銅箔に蒸
着する方法が開示されているが、蒸着アルミニウ
ムと被蒸着体銅との接着強度は極めて弱く、アル
ミニウム細線を超音波振動により固着した場合、
その固着の信頼性は良いとは云えないことが容易
に推定される。
本発明は、かかる欠点を解決するため、鋭意研
究をかさねた結果、銅回路を有する混成集積回路
用基板上に、アルミニウムと銅との複合小片をハ
ンダで接合固着することにより、アルミニウムリ
ード細線の超音波振動固着性にすぐれ、電気的性
能のバラツキ、経時変化及び強度変化のない混成
集積回路基板を完成するに至つた。すなわち、本
発明は、銅箔により導電路および電極を形成した
混成集積回路用基板上のアルミニウムリード細線
の固着結線する部分にアルミニウムに亜鉛及び銅
を順にメツキした複合小片又はアルミニウムに亜
鉛、ニツケル及び銅を順にメツキした複合小片を
ハンダで接合固着してなることを特徴とする混成
集積回路用基板である。
以下図面により本発明の実施例を詳細に説明す
る。
大電流を流す様に設計された混成集積回路で
は、基板１は良熱伝導性金属である。高熱伝導絶
縁層９は、基板１が金属である場合、高熱伝導性
接着剤であり、これを介して銅箔２が接着されて
いる。
この銅箔２は、所定の導電路や電極部等を残し
てエツチング除去する。次に、銅箔２の所定の位
置にヒートシンク６及びトランジスタ８等塔載部
品がハンダ３で固着される。さらに、本発明の亜
鉛又は亜鉛及びニツケルを介してメツキ積層され
たアルミニウムと銅の複合小片１０が、アルミニ
ウムリード細線７の固着部分にハンダ３で固着さ
れる。
本発明の特徴は、亜鉛又は亜鉛及びニツケルを
介してメツキ積層されたアルミニウムと銅の複合
金属小片の銅面部が銅箔４で構成されているた
め、リード部にハンダ３にて直接接合固着するこ
とにあり、また、直接ハンダ３で固着されるた
め、極めて強固で抵抗等の電気的性質にまつたく
問題がなく、当然経時変化を受けることもない。
また、亜鉛又は亜鉛及びニツケルを介してメツキ
積層されたアルミニウムと銅との複合小片１０の
金属間は、クラツド法もしくは複合メツキ法、す
なわち、アルミニウムに亜鉛メツキし銅メツキし
たのも、アルミニウムに亜鉛、ニツケル、銅を順
次メツキすることにより、強固に一体化している
ため、何ら問題はない。更に、アルミニウムリー
ド細線７は、超音波振動法で本発明のアルミニウ
ムリード部５に固着結線すると、同一材料の固着
結線であるため、極めて強固な固着が得られるも
のである。
従つて、本発明によれば、塔載部品と同様に亜
鉛又は亜鉛及びニツケルを介してメツキ積層され
たアルミニウムと銅との複合小片をハンダ付けす
ることも可能であり、作業性も向上し、回路部品
の固着も最良となる。特に、超音波振動法による
アルミニウムリード細線の固着結線も強固であ
り、信頼性が著るしく向上するのである。
【図面の簡単な説明】
図面は、本発明による混成集積回路のアルミニ
ウムワイヤーボンデング部分の断面である。 １……基板、２……銅箔、３……ハンダ、４…
…銅箔、５……アルミニウムリード部、６……ヒ
ートシンク、７……アルミニウム細線、８……ト
ランジスタ、９……高熱伝導絶縁層、１０……亜
鉛又は亜鉛及びニツケルを介してメツキ積層され
たアルミニウムと銅との複合小片。

Claims (1)

    【特許請求の範囲】
  1. １ 銅箔により導電路および電極を形成した混成
    集積回路用基板上のアルミニウムリード細線の固
    着結線する部分にアルミニウムに亜鉛及び銅を順
    にメツキした複合小片又はアルミニウムに亜鉛、
    ニツケル及び銅を順にメツキした複合小片をハン
    ダで接合固着してなることを特徴とする混成集積
    回路用基板。
JP57034301A 1982-03-04 1982-03-04 混成集積回路基板 Granted JPS58151039A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57034301A JPS58151039A (ja) 1982-03-04 1982-03-04 混成集積回路基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57034301A JPS58151039A (ja) 1982-03-04 1982-03-04 混成集積回路基板

Publications (2)

Publication Number Publication Date
JPS58151039A JPS58151039A (ja) 1983-09-08
JPH024143B2 true JPH024143B2 (ja) 1990-01-26

Family

ID=12410326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57034301A Granted JPS58151039A (ja) 1982-03-04 1982-03-04 混成集積回路基板

Country Status (1)

Country Link
JP (1) JPS58151039A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2564487B2 (ja) * 1987-06-02 1996-12-18 電気化学工業株式会社 回路基板及びその混成集積回路
JPH0513011Y2 (ja) * 1987-08-13 1993-04-06
US7786558B2 (en) * 2005-10-20 2010-08-31 Infineon Technologies Ag Semiconductor component and methods to produce a semiconductor component

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396667A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Wire bonding method
JPS5852836A (ja) * 1981-09-24 1983-03-29 Fuji Electric Co Ltd 複合集積回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396667A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Wire bonding method
JPS5852836A (ja) * 1981-09-24 1983-03-29 Fuji Electric Co Ltd 複合集積回路

Also Published As

Publication number Publication date
JPS58151039A (ja) 1983-09-08

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