JPH0241180B2 - - Google Patents

Info

Publication number
JPH0241180B2
JPH0241180B2 JP57161126A JP16112682A JPH0241180B2 JP H0241180 B2 JPH0241180 B2 JP H0241180B2 JP 57161126 A JP57161126 A JP 57161126A JP 16112682 A JP16112682 A JP 16112682A JP H0241180 B2 JPH0241180 B2 JP H0241180B2
Authority
JP
Japan
Prior art keywords
imaging device
radiation
superlattice structure
infrared imaging
infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57161126A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5862982A (ja
Inventor
Maachin Shanon Jon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS5862982A publication Critical patent/JPS5862982A/ja
Publication of JPH0241180B2 publication Critical patent/JPH0241180B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP57161126A 1981-09-18 1982-09-17 赤外線撮像装置 Granted JPS5862982A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8128310 1981-09-18
GB08128310A GB2106314A (en) 1981-09-18 1981-09-18 Infra-red radiation imaging devices

Publications (2)

Publication Number Publication Date
JPS5862982A JPS5862982A (ja) 1983-04-14
JPH0241180B2 true JPH0241180B2 (cg-RX-API-DMAC7.html) 1990-09-14

Family

ID=10524601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57161126A Granted JPS5862982A (ja) 1981-09-18 1982-09-17 赤外線撮像装置

Country Status (6)

Country Link
US (1) US4561005A (cg-RX-API-DMAC7.html)
EP (1) EP0075367B1 (cg-RX-API-DMAC7.html)
JP (1) JPS5862982A (cg-RX-API-DMAC7.html)
DE (1) DE3277791D1 (cg-RX-API-DMAC7.html)
GB (1) GB2106314A (cg-RX-API-DMAC7.html)
IL (1) IL66805A (cg-RX-API-DMAC7.html)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4504518A (en) * 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
JPS61241985A (ja) * 1985-04-19 1986-10-28 Eizo Yamaga 赤外線検知装置
US4843439A (en) * 1985-08-28 1989-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
US5001530A (en) * 1985-09-04 1991-03-19 Unisearch Limited Infrared Schottky junction charge coupled device
US4720444A (en) * 1986-07-31 1988-01-19 Xerox Corporation Layered amorphous silicon alloy photoconductive electrostatographic imaging members with p, n multijunctions
US4711857A (en) * 1986-08-28 1987-12-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
US4894526A (en) * 1987-01-15 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Infrared-radiation detector device
US4857971A (en) * 1987-03-23 1989-08-15 Xerox Corporation (IV)x (III-V)1-x alloys formed in situ in III-V heterostructures
DE3710986A1 (de) * 1987-04-01 1988-10-20 Messerschmitt Boelkow Blohm Lichtempfindliche detektorvorrichtung
US5105248A (en) * 1987-05-14 1992-04-14 Massachusetts Institute Of Technology Spatial light modulator using charge coupled device with quantum wells
US4860074A (en) * 1987-11-05 1989-08-22 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Alternating gradient photodetector
US4817102A (en) * 1988-04-18 1989-03-28 Maurer Larry D Acousto-electromagnetic hologistic resonant system
US4873439A (en) * 1988-06-27 1989-10-10 Massachusetts Institute Of Technology X-ray detector
JP2758472B2 (ja) * 1990-01-11 1998-05-28 三菱電機株式会社 光変調器
US6890834B2 (en) * 2001-06-11 2005-05-10 Matsushita Electric Industrial Co., Ltd. Electronic device and method for manufacturing the same
GB0330134D0 (en) * 2003-12-30 2004-02-04 Univ Liverpool Charge coupled device
FI20070264A7 (fi) * 2007-04-04 2008-10-05 Solar Cascade Oy Aktiivinen aurinkokenno ja valmistusmenetelmä
FR2945668B1 (fr) * 2009-05-14 2011-12-16 Commissariat Energie Atomique Capteur d'image pour imagerie a tres bas niveau de lumiere.

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626257A (en) * 1969-04-01 1971-12-07 Ibm Semiconductor device with superlattice region
US3626328A (en) * 1969-04-01 1971-12-07 Ibm Semiconductor bulk oscillator
DE2261527C2 (de) * 1972-12-15 1983-04-21 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Halbleiterkörper mit in einer vorgegebenen Richtung abwechselnd aufeinanderfolgenden n- und p-dotierten Zonen, Verfahren zu seiner Herstellung und Verwendungen des Halbleiterkörpers
US4210922A (en) * 1975-11-28 1980-07-01 U.S. Philips Corporation Charge coupled imaging device having selective wavelength sensitivity
GB1532859A (en) * 1976-03-30 1978-11-22 Mullard Ltd Charge coupled circuit arrangements and devices
US4142198A (en) * 1976-07-06 1979-02-27 Hughes Aircraft Company Monolithic extrinsic silicon infrared detectors with an improved charge collection structure
US4137542A (en) * 1977-04-20 1979-01-30 International Business Machines Corporation Semiconductor structure
GB1579291A (en) * 1978-01-17 1980-11-19 Plessey Co Ltd Photodiode image sensor
US4348686A (en) * 1980-07-28 1982-09-07 The United States Of America As Represented By The Secretary Of The Army Microwave-infrared detector with semiconductor superlattice region

Also Published As

Publication number Publication date
GB2106314A (en) 1983-04-07
EP0075367B1 (en) 1987-12-02
IL66805A (en) 1985-08-30
US4561005A (en) 1985-12-24
JPS5862982A (ja) 1983-04-14
EP0075367A3 (en) 1985-05-15
EP0075367A2 (en) 1983-03-30
DE3277791D1 (en) 1988-01-14
IL66805A0 (en) 1982-12-31

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