JPH0239593B2 - - Google Patents

Info

Publication number
JPH0239593B2
JPH0239593B2 JP59046839A JP4683984A JPH0239593B2 JP H0239593 B2 JPH0239593 B2 JP H0239593B2 JP 59046839 A JP59046839 A JP 59046839A JP 4683984 A JP4683984 A JP 4683984A JP H0239593 B2 JPH0239593 B2 JP H0239593B2
Authority
JP
Japan
Prior art keywords
sif
silicon
silicon nitride
gas
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59046839A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60190564A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP4683984A priority Critical patent/JPS60190564A/ja
Priority to US06/710,111 priority patent/US4704300A/en
Publication of JPS60190564A publication Critical patent/JPS60190564A/ja
Publication of JPH0239593B2 publication Critical patent/JPH0239593B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
JP4683984A 1984-03-12 1984-03-12 窒化珪素作製方法 Granted JPS60190564A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4683984A JPS60190564A (ja) 1984-03-12 1984-03-12 窒化珪素作製方法
US06/710,111 US4704300A (en) 1984-03-12 1985-03-11 Method for producing silicon nitride layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4683984A JPS60190564A (ja) 1984-03-12 1984-03-12 窒化珪素作製方法

Publications (2)

Publication Number Publication Date
JPS60190564A JPS60190564A (ja) 1985-09-28
JPH0239593B2 true JPH0239593B2 (enrdf_load_stackoverflow) 1990-09-06

Family

ID=12758506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4683984A Granted JPS60190564A (ja) 1984-03-12 1984-03-12 窒化珪素作製方法

Country Status (1)

Country Link
JP (1) JPS60190564A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861086A (en) * 1997-03-10 1999-01-19 Applied Materials, Inc. Method and apparatus for sputter etch conditioning a ceramic body

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62174927A (ja) * 1986-01-28 1987-07-31 Nec Corp 半導体装置
CA2706215C (en) 2010-05-31 2017-07-04 Corrosion Service Company Limited Method and apparatus for providing electrochemical corrosion protection

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6047202B2 (ja) * 1976-01-13 1985-10-21 東北大学金属材料研究所長 超硬高純度の配向多結晶質窒化珪素
JPS6057507B2 (ja) * 1981-10-20 1985-12-16 日本重化学工業株式会社 超硬高純度窒化珪素の製造装置とその製造方法
JPS58115011A (ja) * 1982-12-27 1983-07-08 Res Inst Iron Steel Tohoku Univ 超硬高純度の非晶質窒化珪素とその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5861086A (en) * 1997-03-10 1999-01-19 Applied Materials, Inc. Method and apparatus for sputter etch conditioning a ceramic body

Also Published As

Publication number Publication date
JPS60190564A (ja) 1985-09-28

Similar Documents

Publication Publication Date Title
US6593655B1 (en) Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
JP2962417B2 (ja) ビス（ｔ−ブチルアミノ）シランからの窒化珪素の化学気相成長法
JP2848647B2 (ja) 有機珪素化合物と三弗化窒素を用いた珪素含有被膜の製法
US6667553B2 (en) H:SiOC coated substrates
US6313035B1 (en) Chemical vapor deposition using organometallic precursors
US7919416B2 (en) Method of forming conformal dielectric film having Si-N bonds by PECVD
JPH03504617A (ja) 基板上への窒化けい素及び二酸化けい素フイルムのプラズマデポジシヨン法
US6159559A (en) Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS)
JPS6248753B2 (enrdf_load_stackoverflow)
TW454266B (en) Method for producing silicon a series of nitride film
US4717602A (en) Method for producing silicon nitride layers
US5045346A (en) Method of depositing fluorinated silicon nitride
EP0481706B1 (en) Method of producing CVD silicon oxynitride film
JPH0239593B2 (enrdf_load_stackoverflow)
US4704300A (en) Method for producing silicon nitride layer
JPS60144940A (ja) 酸化珪素作製方法
JP2620063B2 (ja) 半導体装置
JP2001223209A (ja) 絶縁性，半導電性，および導電性薄膜の製造方法
JPH08335579A (ja) フッ素を含むシリコン系酸化膜およびその製造方法
JPS6052578A (ja) 窒化シリコン膜の形成方法
JPH0951035A (ja) 層間絶縁膜の形成方法
JPS63239931A (ja) 堆積膜形成法
Han et al. Growth and characterization of silicon-nitride films by plasma-enhanced chemical vapor deposition
JPS6366919A (ja) 被膜作製方法
JPH0950995A (ja) シリコン系酸化物および半導体装置の層間絶縁膜