JPH0239029A - Liquid crystal display device - Google Patents
Liquid crystal display deviceInfo
- Publication number
- JPH0239029A JPH0239029A JP63189041A JP18904188A JPH0239029A JP H0239029 A JPH0239029 A JP H0239029A JP 63189041 A JP63189041 A JP 63189041A JP 18904188 A JP18904188 A JP 18904188A JP H0239029 A JPH0239029 A JP H0239029A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- liquid crystal
- metal oxide
- crystal display
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 21
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 18
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 18
- 229910052738 indium Inorganic materials 0.000 claims abstract description 3
- 229910052718 tin Inorganic materials 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 230000005669 field effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は液晶表示装置の配線部の構造及び材質に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to the structure and material of the wiring portion of a liquid crystal display device.
従来の技術
近年、微細加工技術と液晶材料の進歩により、液晶パネ
ルを用いたテレビ画像表示装置が商用ベースで提供され
・るようになってきた。又、方式としては絵素毎にスイ
ッチング素子を内蔵させた、いわゆるアクティブ方式が
高コントラスト、高解像度等の利点から主流になりつつ
ある。BACKGROUND OF THE INVENTION In recent years, with advances in microfabrication technology and liquid crystal materials, television image display devices using liquid crystal panels have come to be provided on a commercial basis. Furthermore, as a method, the so-called active method, in which a switching element is built into each picture element, is becoming mainstream due to its advantages such as high contrast and high resolution.
第3図はアクティブ型の液晶パネルの等何回路で、走査
線1と信号線2との交差点毎に、例えば電界効果型トラ
ンジスタのスイッチ素子3と、液晶セル4が配置される
。5は全ての液晶セル4に共通した透明導電層よりなる
対向電極である。FIG. 3 shows a circuit of an active type liquid crystal panel, in which a switch element 3, such as a field effect transistor, and a liquid crystal cell 4 are arranged at each intersection of a scanning line 1 and a signal line 2. Reference numeral 5 denotes a counter electrode made of a transparent conductive layer common to all liquid crystal cells 4.
第4図は一般的なアクティブ方式の単位絵素の平面配置
図であり、同図A −A’線上の断面図を第5図に示す
。絶縁性基板11、例えばガラス基板11上に、走査線
と電界効果型トランジスタのゲートを兼ねる導電層7を
形成し、絶縁層12を介して非晶質シリコン層13及び
信号線8とドレイン9線9を形成し、電界効果型トラン
ジスタを形成する。ここで、6は絵素電極、10は開口
部を示す。FIG. 4 is a plan view of a general active type unit picture element, and FIG. 5 is a sectional view taken along the line A-A' in the figure. A conductive layer 7 serving as a scanning line and a gate of a field effect transistor is formed on an insulating substrate 11, for example, a glass substrate 11, and an amorphous silicon layer 13, a signal line 8, and a drain 9 line are connected via an insulating layer 12. 9 to form a field effect transistor. Here, 6 indicates a picture element electrode, and 10 indicates an opening.
発明が解決しようとする課題
しかしながら上記のような構成では、構造が複雑なため
歩留りが低いという問題を有している。Problems to be Solved by the Invention However, the above configuration has a problem of low yield due to the complicated structure.
この低歩留りの最大の原因に絶縁層12の絶縁不良、例
えばゲートとソース間のショート不良がある。この不良
は画像上においてクロス線欠陥となり、表示品質を著し
く低下させ、実用上大きな問題となる。そのため実際の
生産において、歩留りの向上を考えた場合、この絶縁層
12の不良は無視できない問題となる。そこで、このシ
ョート不良による線欠陥をな(するために、線欠陥不良
の修復の必要性がでてくる。この修復の方法については
現在、薄膜トランジスタアレーの形成時点、あるいは対
向基板貼り付は液晶注入後、レーザーにより不良部分の
配線を切断する方法が主流である。しかしながら、これ
らの配線に用いられている低抵抗金属、例えばAIやC
rは伸展性及び反射率が大きいため、高出力レーザー、
例えばYAGレーザーを用いて切断する場合に、その切
断面が複雑に伸展し、確実な配線の電気的開放が困難で
あるという問題点や、また配線部の電気的開放を確実に
するためレーザーの出力を上げすぎると、照射時の熱に
より液晶中に気泡が発生し、画像に表示ムラを発生させ
るという問題点を有していた。The main cause of this low yield is poor insulation of the insulating layer 12, such as a short circuit between the gate and the source. This defect becomes a cross line defect on the image, significantly lowering the display quality, and posing a serious problem in practice. Therefore, in actual production, when considering improvement in yield, defects in the insulating layer 12 become a problem that cannot be ignored. Therefore, in order to eliminate the line defect caused by this short circuit defect, it becomes necessary to repair the line defect defect.Currently, the method for repairing this defect is carried out at the time of forming the thin film transistor array, or by liquid crystal injection at the time of attaching the counter substrate. After that, the mainstream method is to use a laser to cut the defective wiring.However, the low resistance metals used for these wirings, such as AI and C
Since r has high extensibility and reflectance, it is suitable for high-power lasers,
For example, when cutting using a YAG laser, the cut surface extends in a complicated manner, making it difficult to ensure electrical disconnection of the wiring. If the output is increased too much, bubbles are generated in the liquid crystal due to the heat during irradiation, which causes display unevenness in images.
本発明は上記課題に鑑み、レーザーが照射されると容易
に切断される配線部を備える液晶表示装置を提供しよう
とするものである。In view of the above problems, the present invention provides a liquid crystal display device including a wiring portion that is easily cut when irradiated with a laser.
課題を解決するための手段
本発明はかかる点に鑑み、レーザーによる電気的開放を
容易かつ確実にするために配線の一部に金属酸化物を用
いた構造を有する液晶表示装置である。Means for Solving the Problems In view of the above, the present invention is a liquid crystal display device having a structure in which metal oxide is used for part of the wiring in order to facilitate and ensure electrical disconnection by laser.
作 用
本発明は、絵素トランジスタを形成する配線の一部を、
伸展性の小さいすなわち、固くてもろく、また反射率の
小さい導電性の材質、金属酸化物を用いて形成すること
により、レーザーの照射部を容易に切断することができ
、配線の確実な電気的開放を可能にするものである。Function The present invention provides that a part of the wiring forming the picture element transistor is
By using conductive materials or metal oxides with low extensibility, that is, hard and brittle, and low reflectance, the laser irradiation area can be easily cut, ensuring reliable electrical wiring. It makes it possible to open up.
実施例
第1図は本発明の一実施例による液晶表示装置の里位絵
素の平面配置図であり、同じ(第1図のB −8’線上
の断面図を第2図fal、(bxど示す。Embodiment FIG. 1 is a plan layout diagram of the picture elements of a liquid crystal display device according to an embodiment of the present invention. How to show.
まず第1図に示すように走査線7の一部を金属酸化物に
より配線14.14恰形成する。金属酸化化物としては
、例えばインジウムとスズと酸素よりなる材料を使用す
ることができる。この形成方法としては第2図(alに
示すように走査線7をある間隔dを持たせて導電性金属
を用いて形成し、その上層に金属酸化物による配414
.14’を走査線(導電性金@)7の間隔dを電気的に
接続する様に形成する。この時、走査線7の上に絶縁層
16が介在している場合には、絶縁層16に開口部丁0
を設けた後に金属酸化物による配線14.14′を形成
する。あるいは第2図fblに示す様に金属酸化物によ
る配線14.14′を先に形成しておき、その上に走査
線7をある間隔dを設けて形成する方法を用いても良い
。走査線7と金属酸化物による配線14.14′の間に
絶縁層16が介在している場合には第2図aの例と同様
に絶縁層16に開口部10を設けて接続すると、また、
第1図に示す様に信号線8の一部を金属酸化物により配
線15.15′を形成しても良い。形成方法については
セ査線と同様に行えば良い。First, as shown in FIG. 1, part of the scanning line 7 is formed in the form of wiring 14, 14 using metal oxide. As the metal oxide, for example, a material consisting of indium, tin, and oxygen can be used. As shown in FIG. 2 (al), the method of forming this is to form the scanning lines 7 with a certain interval d using a conductive metal, and to form the wiring 414 made of metal oxide in the upper layer.
.. 14' is formed to electrically connect the scanning lines (conductive gold@) 7 at intervals d. At this time, if the insulating layer 16 is interposed above the scanning line 7, the insulating layer 16 has an opening at
After providing the wirings 14 and 14' made of metal oxide are formed. Alternatively, as shown in FIG. 2 fbl, a method may be used in which metal oxide interconnects 14, 14' are first formed, and scanning lines 7 are formed thereon at a certain interval d. If an insulating layer 16 is interposed between the scanning line 7 and the metal oxide wiring 14, 14', connection can be made by providing an opening 10 in the insulating layer 16 as in the example of FIG. 2a. ,
As shown in FIG. 1, a portion of the signal line 8 may be made of metal oxide to form interconnections 15 and 15'. The formation method may be the same as that for the scanning lines.
以上のように本実施例により形成した液晶表示装置にお
いて、走査線7と信号線8の交差部分にショート不良が
生じた場合、例えば走査線7の酸化金属物による配線1
4.14′の部分をレーザにより切断すれば良い。As described above, in the liquid crystal display device formed according to this embodiment, if a short circuit occurs at the intersection of the scanning line 7 and the signal line 8, for example, the wiring 1 made of a metal oxide of the scanning line 7
4. The 14' portion may be cut using a laser.
発明の詳細
な説明したように、本発明によれば、配線の一部を金属
酸化物を用いて形成することにより、信号配線と走査配
線の交差部分におけるショート不良が発生した場合レー
ザによる電気的開放を容易かつ確実にすることができ、
前記ショート不良の修復が飛躍的に改善され、その実用
的効果は大なるものがある。As described in detail, according to the present invention, a part of the wiring is formed using a metal oxide, so that when a short circuit occurs at the intersection of the signal wiring and the scanning wiring, the electrical It can be opened easily and reliably,
The repair of the short-circuit defect is dramatically improved, and the practical effects thereof are significant.
第1図は本発明の一実施例にかかる液晶表示装置の要部
の平面配置図、第2図1、bは同装置の互いに異なる例
の要部断面図、第3図はアクティブ型液晶表示装置の等
価回路図、第4図は従来例の液晶表示装置用半導体装置
の単位絵素の平面配置図、第5図は同装置の要部断面図
である。
6・・・・・・絵素電極、7・・・・・・走査線、8・
・・・・・信号線、9・・・・・・ドレイン配線、10
・・・・・・開口部、13・・・・・・非晶質シリコン
、14.14ζ 15.15′・・・・・・金属酸化物
。
代理人の氏名 弁理士 粟 野 重 孝 ほか1名第1
図
7−・定量線
8−−一信号課
74、t4’、/S、ts’−4:X酸イ邑物第3図
tp、 14: /、s、ts’
/6
γ一定!ξ泉
δ−・信号p襄
/4. t+: ts、 ts’−+ x Wi&化物
(配線0
1・−足置J裏罫
Z−(8号り裏罫
3−一一絶家ゲート監トランン゛スゲ
4−・評乏晶センレ
5−−一対臼亀ヤE
?
6゛−綜素電糧
γ・−走査」泉
B−・化号沫
q−Yレイン配Δ泉
II−一絶線性基板
/Z−一絶線漫FIG. 1 is a plan view of the main parts of a liquid crystal display device according to an embodiment of the present invention, FIG. 2 1 and b are sectional views of main parts of different examples of the same device, and FIG. 3 is an active liquid crystal display. An equivalent circuit diagram of the device, FIG. 4 is a plan layout of unit picture elements of a conventional semiconductor device for a liquid crystal display device, and FIG. 5 is a sectional view of a main part of the device. 6... Picture element electrode, 7... Scanning line, 8...
...Signal line, 9...Drain wiring, 10
...Opening, 13...Amorphous silicon, 14.14ζ 15.15'...Metal oxide. Name of agent: Patent attorney Shigetaka Awano and 1 other person 1st
Figure 7--Quantitative line 8--Signal section 74, t4', /S, ts'-4: ξIzumi δ-・Signal p/4. t+: ts, ts'-+ -Pair of usu kameya E? 6゛-Silicon electric supply γ・-scanning"Izumi B-・Kagami q-Y rain wiring ΔIzumi II-One-wire board/Z-One-wire wire
Claims (2)
の基板上にマトリクス状に配列された画素電極と、前記
画素電極に近接して接続されてなるスイッチングトラン
ジスタと、前記スイッチングトランジスタのソース電極
に接続してなる信号配線と、前記スイッチングトランジ
スタのゲート電極に接続されてなる走査配線を有してな
る液晶表示装置において、前記画素単位の少なくとも前
記信号配線と前記走査配線の一方の一部に金属酸化物を
用いることを特徴とする液晶表示装置。(1) A liquid crystal is sealed between a pair of substrates, a pixel electrode arranged in a matrix on one of the substrates, a switching transistor connected in close proximity to the pixel electrode, and a switching transistor connected to the pixel electrode. In a liquid crystal display device comprising a signal wiring connected to a source electrode and a scanning wiring connected to a gate electrode of the switching transistor, at least one of the signal wiring and the scanning wiring in the pixel unit A liquid crystal display device characterized in that a metal oxide is used for a portion thereof.
を特徴とする特許請求の範囲第1項記載の液晶表示装置
。(2) The liquid crystal display device according to claim 1, wherein the metal oxide contains indium or tin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63189041A JPH0239029A (en) | 1988-07-28 | 1988-07-28 | Liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63189041A JPH0239029A (en) | 1988-07-28 | 1988-07-28 | Liquid crystal display device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0239029A true JPH0239029A (en) | 1990-02-08 |
Family
ID=16234303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63189041A Pending JPH0239029A (en) | 1988-07-28 | 1988-07-28 | Liquid crystal display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0239029A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013236066A (en) * | 2012-04-13 | 2013-11-21 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
-
1988
- 1988-07-28 JP JP63189041A patent/JPH0239029A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013236066A (en) * | 2012-04-13 | 2013-11-21 | Semiconductor Energy Lab Co Ltd | Semiconductor device and manufacturing method thereof |
JP2018101807A (en) * | 2012-04-13 | 2018-06-28 | 株式会社半導体エネルギー研究所 | Semiconductor device |
US10153307B2 (en) | 2012-04-13 | 2018-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with reduced electrostatic discharge (ESD) in a manufacturing process |
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