KR101232138B1 - Liquid Crystal Display Device And Method For Manufacturing The Same - Google Patents

Abstract

The present invention includes a first substrate and a second substrate facing each other; A gate wiring formed on the first substrate; A gate insulating film formed on the first substrate on which the gate wiring is formed; A data line defining the pixel area by crossing the gate line vertically and horizontally with the gate insulating layer interposed therebetween; A thin film transistor formed at an intersection of the gate line and the data line; A passivation layer formed on the gate insulating layer to cover the thin film transistor and the data line; A pixel electrode formed on the passivation layer and connected to the thin film transistor; A first link line formed on the gate insulating film and extending from the data line; A second link line formed on the first substrate and overlapping with the first link line and the gate insulating layer interposed therebetween; A connection conductive layer penetrating the gate insulating layer and the passivation layer to be in contact with the second link line, penetrating the passivation layer to be in contact with the first link line, and being formed to overlap the first and second link lines on the passivation layer; And a liquid crystal layer formed between the first substrate and the second substrate, wherein the first and second links are connected to each other by laser irradiation in case of poor contact between any one of the first and second link lines and the connection conductive film. 1. A method of manufacturing a liquid crystal display device and a liquid crystal display device, characterized in that the first link line, the second link line, and the connection conductive film formed by overlapping the gate insulating film between the lines are integrally connected to each other.

According to the present invention, since the first link line and the second link line are formed to overlap each other, the first link line and the second link line are connected by the connection conductive film, and thus, between the connection conductive film and the first and second link lines. Even when contact failures occur, the contact failures can be easily repaired by laser irradiation.

1st link line, 2nd link line, connecting conductive film, laser

Description

Liquid Crystal Display Device and Method for Manufacturing the Same {Liquid Crystal Display Device And Method For Manufacturing The Same}

1 is a plan view schematically illustrating a lower substrate of a liquid crystal display device according to the related art.

2 is a cross-sectional view of the line A-A '.

3 is a plan view schematically illustrating a lower substrate of a liquid crystal display according to the present invention.

4 is a cross-sectional view of the line B-B '.

5 is a cross-sectional view schematically illustrating a method of manufacturing a liquid crystal display device according to an exemplary embodiment of the present invention.

DESCRIPTION OF THE REFERENCE NUMERALS OF THE DRAWINGS FIG.

100: gate wiring 120: gate electrode

180: second link line 200: data wiring

220: source electrode 240: drain electrode

280: first link line 300: pixel electrode

350: connection conductive film 400: thin film transistor

500: gate insulating film 600: protective film

700: Laser Equipment

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a link unit connecting a data line and a driving circuit of a liquid crystal display device.

Ultra-thin flat panel displays with a thickness of only a few centimeters (cm). Among them, liquid crystal displays have low operating voltages, which consume less power and can be used as portable devices. Applications range from ships to spacecraft to aircraft.

The liquid crystal display device includes a lower substrate, an upper substrate, and a liquid crystal layer formed between the two substrates.

A light blocking layer for blocking light leakage is formed on the upper substrate, a color filter layer is formed on the light blocking layer, and a common electrode is formed on the color filter layer.

In addition, a gate wiring, a data wiring, a thin film transistor, a pixel electrode, and the like are formed on the lower substrate.

1 is a plan view schematically illustrating a lower substrate of a liquid crystal display device according to the related art.

As can be seen in FIG. 1, a gate wiring 10 and a data wiring 20 are formed on the lower substrate so as to cross each other to define a pixel area, and each intersection of the gate wiring 10 and the data wiring 20 is formed. The thin film transistor 40 is formed.

The thin film transistor 40 may include a gate electrode 12 connected to the gate line 10, a semiconductor layer (not shown) on the gate electrode, and a source electrode 22 connected to the data line 20. The drain electrode 24 is spaced apart from the source electrode at a predetermined interval and connected to the pixel electrode 30.

The pixel electrode 30 is made of a transparent conductive material and is connected to the drain electrode 24 of the thin film transistor 40 through a contact hole 26 penetrating a protective film (not shown).

The gate line 10 supplies a gate signal to the gate electrode 12 of the thin film transistor 40, and the data line 20 passes through the drain electrode 24 of the thin film transistor 40. 30 to supply a pixel signal.

In addition, the thin film transistor 40 keeps the pixel signal of the data line 20 charged and maintained in the pixel electrode 30 in response to the gate signal of the gate line 10.

The data line 20 is connected to a data driving circuit to receive a pixel signal.

Hereinafter, the link portion of the data line 20 and the data driving circuit according to the related art will be described with reference to the drawings.

As shown in FIG. 1, the link portion of the data line 20 and the data driving circuit includes a first link line 28 extending from the data line 20 and a second link line extending from the data driving circuit. 18), the first link line 28 is connected to the second link line 18 by a connection conductive film 35.

Since the second link line is formed of a material having a lower resistance than that of the first link line, the second link line can prevent a delay of the pixel signal and reduce the width of the pattern.

The link portion of the first link line 28 and the second link line 18 is shown in detail in FIG.

FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. 1.

As can be seen in FIG. 2, the first link line 28 and the second link line 18 formed on the substrate 11 are connected to each other by the connection conductive film 35 because the layers in which the link lines are located are different. .

In this case, a passivation layer 60 is formed between the first link line 28 and the connection conductive layer 35, and a gate insulating film 50 is formed between the second link line 18 and the connection conductive layer 35. ) And a protective film 60 are formed.

However, the link portion of the data line 20 and the data driving circuit according to the related art is a contact point C1 of the connection conductive film 35 and the first link line 28 or the connection conductive film 35 and the second link line. If contact is not made properly at the contact point C2 of (18), a wiring failure occurs. That is, the pixel signal supplied from the data driver circuit is not transmitted to the data line 20.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems,

The first object of the present invention is to form the data line and the first link line and the second link line of the link portion of the data driving circuit by overlapping, and then to connect the first link line and the second link line by a connecting conductive film, thereby To provide a liquid crystal display device having a structure that can easily repair the contact failure by the irradiation of the laser even if the contact failure occurs between the film and the first, second link line,

A second object of the present invention is to provide a liquid crystal display device manufacturing method using a method for easily repairing wiring defects generated in the liquid crystal display device having the above structure.

The present invention, the first substrate and the second substrate facing each other to achieve the first object as described above; A gate wiring formed on the first substrate; A data line defining a pixel region by crossing the gate line vertically and horizontally with a gate insulating film formed on the first substrate on which the gate line is formed; A thin film transistor formed at an intersection of the gate line and the data line; A passivation layer formed on the gate insulating layer to cover the thin film transistor and the data line; A pixel electrode formed on the passivation layer and connected to the thin film transistor; A first link line formed on the gate insulating film and extending from the data line; A second link line formed on the first substrate and overlapping with the first link line and the gate insulating layer interposed therebetween; A connection conductive layer penetrating the gate insulating layer and the passivation layer to be in contact with the second link line, penetrating the passivation layer to be in contact with the first link line, and being formed to overlap the first and second link lines on the passivation layer; And a liquid crystal layer formed between the first substrate and the second substrate, wherein the first and second links are connected to each other by laser irradiation in case of poor contact between any one of the first and second link lines and the connection conductive film. A first link line, a second link line, and a connection conductive film formed by passing through the gate insulating film between lines are integrally connected to each other.

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The liquid crystal display according to the related art is not formed by overlapping the first link line and the second link line. However, in the present invention, the data line and the data driving circuit have a structure in which both link lines overlap and a connection conductive film overlaps. By constructing the link portion, the repair can be facilitated when a poor contact between the link wire and the connection conductive film occurs.

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The second link line may be formed on the same layer as the gate line, and the connection conductive layer may be formed on the same layer as the pixel electrode.

The second link line may extend from a data pad electrode connected to an external driving circuit.

The present invention provides a process for forming a gate wiring on a substrate in order to achieve the second object as described above (first process); Forming a gate insulating film on the substrate on which the gate wiring is formed; Forming a data line intersecting the gate line vertically and horizontally, and a first link line extending from the data line on the gate insulating film (second step); Forming a second link line overlapping the first link line with the gate insulating layer therebetween (third step); Forming a thin film transistor in an intersection area of the gate line and the data line (fourth step); Forming a protective film on the gate insulating film to cover the thin film transistor and the data line; Forming a pixel electrode connected to the thin film transistor on the passivation layer (fifth step); Forming a connection conductive film penetrating the gate insulating film and the protective film to be in contact with the second link line, penetrating the protective film and being in contact with the first link line, and overlapping the first and second link lines on the protective film ( Sixth step); Inspecting contact failure between any one of the first and second link lines and the connection conductive film (seventh step); And repairing by using a laser when the contact failure occurs (eighth step), wherein the repairing step is performed by overlapping the gate insulating film between the first and second link lines by the laser irradiation. Provided is a method for manufacturing a liquid crystal display device, wherein the first link line, the second link line, and the connection conductive film are integrally connected to each other.

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In this case, the process of forming the gate wiring (first process) and the process of forming the second link line (third process) may be performed in one process.

In addition, the process of forming the pixel electrode (the fifth process) and the process of forming the connection conductive film (the sixth process) may also be performed in one process.

In addition, the process of repairing contact failure by using the laser (step 8) includes irradiating a laser to a region where the first link line and the connection conductive film are connected when the first and second link lines and the connection conductive film are in poor contact. Can be.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a plan view schematically illustrating a lower substrate of a liquid crystal display according to the present invention.

The lower substrate of the liquid crystal display according to the present invention includes an active region for displaying an image and a pad portion region connected to an external driving circuit. As shown in FIG. 3, the active substrate may include a gate wiring 100 and data. The wiring 200, the thin film transistor 400, and the pixel electrode 300 are formed, and a data pad electrode is formed in the pad region, and the data wiring 200 of the active region is linked to each other. It is connected to the data pad electrode. At this time, a portion to which the data line 200 is linked to be connected to the data driving circuit is a link portion between the data line 200 and the data driving circuit.

The gate line 100 and the data line 200 cross each other in a longitudinal direction to define a pixel area, and the thin film transistor 400 is formed at an intersection area of the gate line 100 and the data line 200.

The thin film transistor 400 may include a gate electrode 120 connected to the gate line 100, a semiconductor layer (not shown) that is insulated from the gate electrode, and a source connected to the data line 200. And an electrode 220 and a drain electrode 240 spaced apart from the source electrode at a predetermined interval and connected to the pixel electrode 300 through the contact hole 260.

The link portion to which the data line 200 and the data driving circuit are connected extends from the first link line 280 extending from the data line 200 and a data pad electrode (not shown) connected to the data driving circuit. And a connection conductive film 350 connecting the second link line 180 overlapping the first link line and the first and second link lines 280 and 180 formed on different layers. do. At this time, the connection conductive film is also formed on the first and second link lines overlapping each other.

The structure of the link unit to which the data line 200 and the data driving circuit are connected will be described in detail with reference to FIG. 4.

4 is a cross-sectional view taken along line BB ′ of FIG. 3.

As shown in FIG. 4, a first link line 280 and a second link line 180 are overlapped with each other at a link portion to which the data line 200 and the data driving circuit are connected, and a gate insulating film therebetween. 500) is formed. In this case, the first link line 280 is provided on the same layer as the data line 200 (in FIG. 3), and the second link line is provided on the same layer as the gate line 100 (FIG. 3). The two link lines are provided on the same layer as the gate lines 100 in FIG. 3 and are integrally formed with the data pad electrodes.

In addition, a passivation layer 600 is formed on the first link line 280, and a connection conductive layer 350 overlaps with the passivation layer 600, and the first link line 280 and the connection conductive layer are formed on the passivation layer 600. 350 are connected to each other through the protective film 600 therebetween.

The gate insulating film 500 and the passivation layer 600 are formed on the second link line 180, and the connection conductive layer 350 is overlapped on the passivation layer 600, and the second link line 180 is formed on the second link line 180. ) And the connection conductive film 350 are connected to each other through the gate insulating film 500 and the passivation film 600 therebetween.

That is, the pixel signal transmitted from the data driving circuit is transmitted to the first link line 280 and the data line 200 through the connection conductive film 350 through the second link line 180 extending from the data pad electrode. .

As such, when the connection conductive film 350, the first link line 280, and the second link line 180 overlap each other, the contact point C3 of the connection conductive film 350 and the first link line 280 is formed. ) Or even if a wiring defect occurs at the contact point C4 of the connection conductive film 350 and the second link line 180, at the contact point C3 of the connection conductive film 350 and the first link line 280. By irradiating the laser, the connection conductive film 350, the first link line 280 and the second link line 180 can be integrally contacted at this point, so that the wiring is easily defective, that is, the link lines 280 and 180. The poor contact of the connection conductive film 350 can be eliminated.

Since the first link line 280 extends from the data line 200, the first link line 280 may be formed of the same material as the data line 200. Molybdenum (Mo) is preferably used.

The second link line 180 may be formed on the same layer as the gate line 100, and a constituent material thereof may also be formed of the same material as the gate line 100. Preferably, aluminum alloy (AlNd) and molybdenum are used. It is formed in a double film structure of (Mo).

The gate insulating film 500 is the same layer as the gate insulating film formed on the gate electrode 120 of the thin film transistor 400, and its constituent material is also the same.

The passivation layer 600 is formed of the same layer as the passivation layer formed on the source electrode 220 and the drain electrode 240, and is formed on top of the passivation layer 600.

The connection conductive film 350 is the same layer as the pixel electrode 300 connected to the drain electrode, and the constituent material thereof may also be the same, and the constituent material may include indium-tin-oxide and indium-tin-oxide. The same transparent conductive material is used.

In addition, in order to manufacture a liquid crystal display device having the above structure,

First, as shown in FIG. 5A, an aluminum alloy (AlNd) and molybdenum (Mo) are sequentially deposited and patterned on the substrate 111 to form a gate wiring (100 in FIG. 3), a gate electrode 120, and a data pad electrode. A second link line 180 formed to extend from is formed.

Thereafter, an inorganic insulating material such as silicon nitride or silicon oxide is deposited on the entire surface including the gate wiring (100 of FIG. 3), the gate electrode 120, and the second link line 180 to form a gate insulating film 500. do.

Subsequently, amorphous silicon is deposited and patterned on the entire surface including the gate insulating layer 500 to form a semiconductor layer 190 on the gate insulating layer 500 on the gate electrode 120.

Subsequently, as illustrated in FIG. 5B, molybdenum is deposited and patterned on the entire surface including the semiconductor layer 190 to pattern the data line 200, the source electrode 220, the drain electrode 240, and the data line 200. The first link line 280 is formed to extend from.

Thereafter, an inorganic insulating material such as silicon nitride or silicon oxide is deposited on the entire surface including the data line 200 and the first link line 280 to form a protective film 600.

Next, the contact hole 260 is formed by removing the passivation layer 600 on the drain electrode, and the contact point C3 is formed by removing the passivation layer on the first link line 280. The contact point C4 is formed by removing the gate insulating layer 500 and the passivation layer 600 on the line 180.

Subsequently, as illustrated in FIG. 5C, a transparent conductive material such as indium-tin-oxide is deposited and patterned on the passivation layer 600 to form a drain electrode through the contact hole 260. A pixel electrode 300 connected to the 240 and a connection conductive film 350 connected to the first and second link lines 280 and 180 through the contact points C3 and C4 are formed to form a liquid crystal display device. Complete the lower substrate.

Thereafter, after completing the lower substrate of the liquid crystal display device, whether the connection conductive film 350 is in good contact with the first link line 280 and the second link line 180, or does not come into contact with each other, so that wiring defects may not occur. Check if it is.

If the contact failure occurs at the contact point C4 of the connection conductive film 350 and the second link line 180 as illustrated in FIG. 5D, the connection conductive film 350 may be connected to the first link line ( 280 is irradiated with the laser to the laser device 700, as shown in Figure 5e, the connection conductive film 350, the first link line 280 and the second link line 180 at a time. By contact, wiring defects can be repaired easily. Of course, even when a contact failure occurs at the contact point C3 of the connection conductive film 350 and the first link line 280, the wiring defect can be repaired in the same manner as described above.

For reference, the second link line 180 is overlapped with a portion where the first link line 280 and the connection conductive film 350 are connected to each other, so that the connection conductive film 350 and the first link line 180 are formed. When the laser beam is irradiated to a portion where the link line 280 contacts, the first link line 280, the second link line 180, and the connection conductive film 350 may be integrally connected.

The reason why the laser is irradiated to the portion C3 where the connection conductive film 350 is in contact with the first link line 280 is that the first link line 280 only passes through the gate insulating film 500 by laser irradiation. The second link line 180 and the connection conductive film 350 are easily connected to each other. Of course, it is not limited thereto.

When the connection conductive film 350, the first link line 280 and the second link line 180 are brought into contact at once by laser irradiation, the data transmitted from the data driving circuit does not pass through the connection conductive film 350. The first link line 280 will be directly transmitted from the second link line 180.

According to the present invention,

After overlapping the first link line extending from the data line and the second link line extending from the data pad electrode, the first link line and the second link line are formed by the connection conductive film formed to overlap the first link line and the second link line. Therefore, the connection conductive film, the first link line and the second link are irradiated by irradiating a laser to a contact point between the connection conductive film and the first link line even when a poor contact occurs between the link line and the connection conductive film. The wires can be connected all at once, so that poor contact can be repaired easily.

Claims (15)

A first substrate and a second substrate facing each other; A gate wiring formed on the first substrate; A gate insulating film formed on the first substrate on which the gate wiring is formed; A data line defining the pixel area by crossing the gate line vertically and horizontally with the gate insulating layer interposed therebetween; A thin film transistor formed at an intersection of the gate line and the data line; A passivation layer formed on the gate insulating layer to cover the thin film transistor and the data line; A pixel electrode formed on the passivation layer and connected to the thin film transistor; A first link line formed on the gate insulating film and extending from the data line; A second link line formed on the first substrate and overlapping with the first link line and the gate insulating layer interposed therebetween; A connection conductive layer penetrating the gate insulating layer and the passivation layer to be in contact with the second link line, penetrating the passivation layer to be in contact with the first link line, and being formed to overlap the first and second link lines on the passivation layer; And A liquid crystal layer formed between the first substrate and the second substrate, A first link line formed by overlapping the gate insulating layer between the first and second link lines by laser irradiation when one of the first and second link lines and the connection conductive film are poor in contact; And a second link line and a connection conductive film are integrally connected to each other. delete delete delete delete delete delete The method of claim 1, The second link line And a liquid crystal display element formed on the same layer as the gate line. The method of claim 1, The connection conductive film is And a liquid crystal display device formed on the same layer as the pixel electrode. The method of claim 1, The second link line And a liquid crystal display device extending from a data pad electrode connected to an external driving circuit. Forming a gate wiring on the substrate; Forming a gate insulating film on the substrate on which the gate wiring is formed; Forming a data line crossing the gate line vertically and horizontally, and a first link line extending from the data line on the gate insulating film; Forming a second link line overlapping the first link line with the gate insulating layer interposed therebetween on the substrate; Forming a thin film transistor in an intersection region of the gate line and the data line; Forming a protective film on the gate insulating film to cover the thin film transistor and the data line; Forming a pixel electrode connected to the thin film transistor on the passivation layer; Forming a connection conductive film penetrating the gate insulating film and the protective film to be in contact with the second link line, and penetrating the protective film to be in contact with the first link line and overlapping the first and second link lines on the protective film; Inspecting a poor contact between any one of the first and second link lines and the connection conductive film; And In the case of contact failure occurs repairing using a laser, The repairing step is characterized in that the first link line, the second link line, and the connection conductive film formed by overlapping the gate insulating film between the first and second link lines through the laser irradiation are integrally connected to each other. Liquid crystal display device manufacturing method. 12. The method of claim 11, Forming the gate line and forming the second link line Liquid crystal display device manufacturing method characterized in that it comprises one step. 12. The method of claim 11, Forming the pixel electrode and forming the connection conductive film Liquid crystal display device manufacturing method characterized in that it comprises one step. 12. The method of claim 11, And the second link line overlaps the portion where the first link line and the connection conductive film are connected to each other. The method of claim 14, The process of repairing contact failure using the laser And irradiating a laser to a region where the first link line and the connection conductive film are connected to each other.

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