JPH02371A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH02371A JPH02371A JP63121705A JP12170588A JPH02371A JP H02371 A JPH02371 A JP H02371A JP 63121705 A JP63121705 A JP 63121705A JP 12170588 A JP12170588 A JP 12170588A JP H02371 A JPH02371 A JP H02371A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- gate
- voltage
- region
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63121705A JPH02371A (ja) | 1988-05-20 | 1988-05-20 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63121705A JPH02371A (ja) | 1988-05-20 | 1988-05-20 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6394179A Division JPS55156370A (en) | 1979-05-25 | 1979-05-25 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02371A true JPH02371A (ja) | 1990-01-05 |
| JPH0368543B2 JPH0368543B2 (en, 2012) | 1991-10-28 |
Family
ID=14817842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63121705A Granted JPH02371A (ja) | 1988-05-20 | 1988-05-20 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02371A (en, 2012) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004342720A (ja) * | 2003-05-14 | 2004-12-02 | Seiko Epson Corp | 不揮発性記憶装置を含む半導体装置 |
| JP2010056573A (ja) * | 2009-12-07 | 2010-03-11 | Seiko Epson Corp | 不揮発性記憶装置を含む半導体装置 |
| JP2011071343A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体記憶装置 |
-
1988
- 1988-05-20 JP JP63121705A patent/JPH02371A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004342720A (ja) * | 2003-05-14 | 2004-12-02 | Seiko Epson Corp | 不揮発性記憶装置を含む半導体装置 |
| JP2011071343A (ja) * | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体記憶装置 |
| US8334557B2 (en) | 2009-09-25 | 2012-12-18 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor storage device including a transfer transistor |
| JP2010056573A (ja) * | 2009-12-07 | 2010-03-11 | Seiko Epson Corp | 不揮発性記憶装置を含む半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0368543B2 (en, 2012) | 1991-10-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0219980B2 (en, 2012) | ||
| US7476586B2 (en) | NOR flash memory cell with high storage density | |
| US6608346B2 (en) | Method and structure for an improved floating gate memory cell | |
| US20040065918A1 (en) | Nonvolatile memory device | |
| KR100373670B1 (ko) | 불휘발성 반도체 기억 장치 | |
| US6696723B2 (en) | Electrically erasable, programmable, non-volatile memory device compatible with a CMOS/SOI production process | |
| JP3920550B2 (ja) | 不揮発性半導体記憶装置 | |
| JPH02371A (ja) | 半導体装置の製造方法 | |
| US5252505A (en) | Method for manufacturing a semiconductor device | |
| US5348898A (en) | Semiconductor device and method for manufacturing the same | |
| JPH023182A (ja) | 半導体記憶回路装置 | |
| JP2875544B2 (ja) | 半導体記憶装置 | |
| JPH0543301B2 (en, 2012) | ||
| JPH02356A (ja) | 半導体装置 | |
| JPH06125094A (ja) | 不揮発性記憶素子およびこの素子の製造方法ならびにこの素子を利用した不揮発性記憶装置およびその駆動方法 | |
| JPH02358A (ja) | 半導体記憶回路装置 | |
| JPH0421350B2 (en, 2012) | ||
| JP3162472B2 (ja) | 不揮発性半導体記憶装置 | |
| JP3206106B2 (ja) | 半導体記憶装置 | |
| JP2635638B2 (ja) | 不揮発性半導体メモリ装置の製造方法 | |
| JP2786629B2 (ja) | 不揮発性半導体メモリ装置 | |
| JPH05136376A (ja) | 半導体不揮発性記憶装置とその書き込み方法 | |
| JP2002368143A (ja) | 半導体記憶装置 | |
| JPH0758226A (ja) | 半導体装置とその製造方法およびメモリセル駆動方法 | |
| JPH11176954A (ja) | 不揮発性半導体記憶装置およびその製造方法 |