JPH0237112B2 - - Google Patents
Info
- Publication number
- JPH0237112B2 JPH0237112B2 JP56105934A JP10593481A JPH0237112B2 JP H0237112 B2 JPH0237112 B2 JP H0237112B2 JP 56105934 A JP56105934 A JP 56105934A JP 10593481 A JP10593481 A JP 10593481A JP H0237112 B2 JPH0237112 B2 JP H0237112B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- protection
- transistor
- gate
- breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
Landscapes
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56105934A JPS587870A (ja) | 1981-07-07 | 1981-07-07 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56105934A JPS587870A (ja) | 1981-07-07 | 1981-07-07 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS587870A JPS587870A (ja) | 1983-01-17 |
JPH0237112B2 true JPH0237112B2 (en:Method) | 1990-08-22 |
Family
ID=14420673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56105934A Granted JPS587870A (ja) | 1981-07-07 | 1981-07-07 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS587870A (en:Method) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03127695U (en:Method) * | 1990-04-03 | 1991-12-24 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04100106U (en:Method) * | 1991-02-12 | 1992-08-28 | ||
DE69317004T2 (de) * | 1992-03-26 | 1998-06-10 | Texas Instruments Inc | Hochspannungstruktur mit oxydisolierter Source und RESURF-Drift-Zone in Massivsilizium |
-
1981
- 1981-07-07 JP JP56105934A patent/JPS587870A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03127695U (en:Method) * | 1990-04-03 | 1991-12-24 |
Also Published As
Publication number | Publication date |
---|---|
JPS587870A (ja) | 1983-01-17 |
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