JPS6115593B2 - - Google Patents

Info

Publication number
JPS6115593B2
JPS6115593B2 JP53074393A JP7439378A JPS6115593B2 JP S6115593 B2 JPS6115593 B2 JP S6115593B2 JP 53074393 A JP53074393 A JP 53074393A JP 7439378 A JP7439378 A JP 7439378A JP S6115593 B2 JPS6115593 B2 JP S6115593B2
Authority
JP
Japan
Prior art keywords
gate
igfet
type
substrate
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53074393A
Other languages
English (en)
Japanese (ja)
Other versions
JPS551142A (en
Inventor
Hatsuhide Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP7439378A priority Critical patent/JPS551142A/ja
Publication of JPS551142A publication Critical patent/JPS551142A/ja
Publication of JPS6115593B2 publication Critical patent/JPS6115593B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
JP7439378A 1978-06-19 1978-06-19 Semiconductor with protector Granted JPS551142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7439378A JPS551142A (en) 1978-06-19 1978-06-19 Semiconductor with protector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7439378A JPS551142A (en) 1978-06-19 1978-06-19 Semiconductor with protector

Publications (2)

Publication Number Publication Date
JPS551142A JPS551142A (en) 1980-01-07
JPS6115593B2 true JPS6115593B2 (en:Method) 1986-04-24

Family

ID=13545886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7439378A Granted JPS551142A (en) 1978-06-19 1978-06-19 Semiconductor with protector

Country Status (1)

Country Link
JP (1) JPS551142A (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5750109A (en) * 1980-09-10 1982-03-24 Toshiba Corp High impedance circuit for integrated circuit
JPS6211258A (ja) * 1985-07-08 1987-01-20 Nec Corp ＧａＡｓ半導体集積回路
US5686751A (en) * 1996-06-28 1997-11-11 Winbond Electronics Corp. Electrostatic discharge protection circuit triggered by capacitive-coupling
JP5694020B2 (ja) * 2011-03-18 2015-04-01 トランスフォーム・ジャパン株式会社 トランジスタ回路

Also Published As

Publication number Publication date
JPS551142A (en) 1980-01-07

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