JPH0235450B2 - - Google Patents

Info

Publication number
JPH0235450B2
JPH0235450B2 JP56145235A JP14523581A JPH0235450B2 JP H0235450 B2 JPH0235450 B2 JP H0235450B2 JP 56145235 A JP56145235 A JP 56145235A JP 14523581 A JP14523581 A JP 14523581A JP H0235450 B2 JPH0235450 B2 JP H0235450B2
Authority
JP
Japan
Prior art keywords
film
polycrystalline silicon
silicon dioxide
silicon
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56145235A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5846626A (ja
Inventor
Seiichiro Kawamura
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56145235A priority Critical patent/JPS5846626A/ja
Publication of JPS5846626A publication Critical patent/JPS5846626A/ja
Publication of JPH0235450B2 publication Critical patent/JPH0235450B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP56145235A 1981-09-14 1981-09-14 半導体装置の製造方法 Granted JPS5846626A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56145235A JPS5846626A (ja) 1981-09-14 1981-09-14 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56145235A JPS5846626A (ja) 1981-09-14 1981-09-14 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5846626A JPS5846626A (ja) 1983-03-18
JPH0235450B2 true JPH0235450B2 (enrdf_load_stackoverflow) 1990-08-10

Family

ID=15380455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56145235A Granted JPS5846626A (ja) 1981-09-14 1981-09-14 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5846626A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251113A (ja) * 1985-04-30 1986-11-08 Fujitsu Ltd 非単結晶層の単結晶化方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669837A (en) * 1979-11-12 1981-06-11 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5846626A (ja) 1983-03-18

Similar Documents

Publication Publication Date Title
JPH02283014A (ja) 支持体上に結晶材料のシートを形成する方法
JPS5861622A (ja) 単結晶薄膜の製造方法
JPH0235450B2 (enrdf_load_stackoverflow)
JP2743370B2 (ja) 多結晶膜の形成方法
JPS5886717A (ja) 単結晶シリコン膜形成法
JPS621220A (ja) 欠陥が局在された配向シリコン単結晶膜を絶縁支持体上に製造する方法
JPS5983993A (ja) 単結晶半導体層の成長方法
JPS59182529A (ja) 半導体層のパタ−ン形成方法
JPS5856457A (ja) 半導体装置の製造方法
JPS60161396A (ja) シリコン薄膜の製造方法
JPS58180019A (ja) 半導体基体およびその製造方法
JPH08148427A (ja) シリコン量子ドットの製造方法
JPH0770479B2 (ja) 半導体装置の製造方法
JPH0136972B2 (enrdf_load_stackoverflow)
JP2671828B2 (ja) 半導体装置の製造方法
JP3144707B2 (ja) 結晶基材の製造方法
JPS59154016A (ja) 薄膜結晶形成法
JPS6116530A (ja) 半導体装置の製造方法
JPS6351369B2 (enrdf_load_stackoverflow)
RU1570550C (ru) Способ изготовлени структур кремний на диэлектрике
JPS60176220A (ja) 半導体装置の製造方法
JPS63315587A (ja) 単結晶薄膜形成方法
JPS59217323A (ja) 単結晶シリコンの製造方法
JPS6347255B2 (enrdf_load_stackoverflow)
JPS58114440A (ja) 半導体装置用基板の製造方法