JPH0234164B2 - - Google Patents
Info
- Publication number
- JPH0234164B2 JPH0234164B2 JP59252723A JP25272384A JPH0234164B2 JP H0234164 B2 JPH0234164 B2 JP H0234164B2 JP 59252723 A JP59252723 A JP 59252723A JP 25272384 A JP25272384 A JP 25272384A JP H0234164 B2 JPH0234164 B2 JP H0234164B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- wafer
- substrate
- light irradiation
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010438 heat treatment Methods 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 89
- 239000007789 gas Substances 0.000 description 24
- 239000011261 inert gas Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59252723A JPS61129834A (ja) | 1984-11-28 | 1984-11-28 | 光照射型熱処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59252723A JPS61129834A (ja) | 1984-11-28 | 1984-11-28 | 光照射型熱処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61129834A JPS61129834A (ja) | 1986-06-17 |
| JPH0234164B2 true JPH0234164B2 (de) | 1990-08-01 |
Family
ID=17241365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59252723A Granted JPS61129834A (ja) | 1984-11-28 | 1984-11-28 | 光照射型熱処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61129834A (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6237927U (de) * | 1985-08-27 | 1987-03-06 | ||
| DE4407377C2 (de) * | 1994-03-05 | 1996-09-26 | Ast Elektronik Gmbh | Reaktionskammer eines Schnellheizsystems für die Kurzzeittemperung von Halbleiterscheiben und Verfahren zum Spülen der Reaktionskammer |
| US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
| US6067931A (en) * | 1996-11-04 | 2000-05-30 | General Electric Company | Thermal processor for semiconductor wafers |
| ATE481741T1 (de) * | 1999-10-20 | 2010-10-15 | Saint Gobain | Vorrichtung und verfahren zum gleichzeitigen temperieren mehrerer prozessiergüter |
| WO2001029901A2 (de) * | 1999-10-20 | 2001-04-26 | Siemens Aktiengesellschaft | Vorrichtung und verfahren zum temperieren mindestens eines prozessierguts |
| JP5630935B2 (ja) * | 2003-12-19 | 2014-11-26 | マトソン テクノロジー、インコーポレイテッド | 工作物の熱誘起運動を抑制する機器及び装置 |
| TWI365519B (en) * | 2003-12-19 | 2012-06-01 | Mattson Tech Canada Inc | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
| EP3690962A1 (de) * | 2019-01-31 | 2020-08-05 | (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. | Anordnung, vorrichtung und verfahren zum wärmebehandeln eines mehrschichtkörpers |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52139363A (en) * | 1976-05-17 | 1977-11-21 | Hitachi Ltd | Heat treatment method for wafers |
| JPS5756510U (de) * | 1980-09-17 | 1982-04-02 | ||
| JPS5832409A (ja) * | 1981-08-20 | 1983-02-25 | Seiko Epson Corp | 単結晶Ｓｉ膜育成装置 |
-
1984
- 1984-11-28 JP JP59252723A patent/JPS61129834A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52139363A (en) * | 1976-05-17 | 1977-11-21 | Hitachi Ltd | Heat treatment method for wafers |
| JPS5756510U (de) * | 1980-09-17 | 1982-04-02 | ||
| JPS5832409A (ja) * | 1981-08-20 | 1983-02-25 | Seiko Epson Corp | 単結晶Ｓｉ膜育成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61129834A (ja) | 1986-06-17 |
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