JPH023295B2 - - Google Patents
Info
- Publication number
- JPH023295B2 JPH023295B2 JP57030293A JP3029382A JPH023295B2 JP H023295 B2 JPH023295 B2 JP H023295B2 JP 57030293 A JP57030293 A JP 57030293A JP 3029382 A JP3029382 A JP 3029382A JP H023295 B2 JPH023295 B2 JP H023295B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- threshold voltage
- fet
- etching
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57030293A JPS58147123A (ja) | 1982-02-26 | 1982-02-26 | 半導体層のエツチング処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57030293A JPS58147123A (ja) | 1982-02-26 | 1982-02-26 | 半導体層のエツチング処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58147123A JPS58147123A (ja) | 1983-09-01 |
| JPH023295B2 true JPH023295B2 (https=) | 1990-01-23 |
Family
ID=12299679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57030293A Granted JPS58147123A (ja) | 1982-02-26 | 1982-02-26 | 半導体層のエツチング処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58147123A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02165641A (ja) * | 1988-12-20 | 1990-06-26 | Sanyo Electric Co Ltd | 電界効果トランジスタの製造方法 |
| US7494596B2 (en) | 2003-03-21 | 2009-02-24 | Hewlett-Packard Development Company, L.P. | Measurement of etching |
| CN109887872B (zh) * | 2019-03-29 | 2024-11-15 | 华南理工大学 | 用于制备凹槽栅增强型器件的精准刻蚀装置及其刻蚀方法 |
-
1982
- 1982-02-26 JP JP57030293A patent/JPS58147123A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58147123A (ja) | 1983-09-01 |
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