JPH023293B2 - - Google Patents
Info
- Publication number
- JPH023293B2 JPH023293B2 JP58027170A JP2717083A JPH023293B2 JP H023293 B2 JPH023293 B2 JP H023293B2 JP 58027170 A JP58027170 A JP 58027170A JP 2717083 A JP2717083 A JP 2717083A JP H023293 B2 JPH023293 B2 JP H023293B2
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- semiconductor substrate
- chamber
- vacuum
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58027170A JPS59152621A (ja) | 1983-02-21 | 1983-02-21 | イオン注入装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58027170A JPS59152621A (ja) | 1983-02-21 | 1983-02-21 | イオン注入装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59152621A JPS59152621A (ja) | 1984-08-31 |
| JPH023293B2 true JPH023293B2 (https=) | 1990-01-23 |
Family
ID=12213582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58027170A Granted JPS59152621A (ja) | 1983-02-21 | 1983-02-21 | イオン注入装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59152621A (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01191424A (ja) * | 1988-01-27 | 1989-08-01 | Toshiba Corp | レジスト硬化処理方法 |
| US6458430B1 (en) * | 1999-12-22 | 2002-10-01 | Axcelis Technologies, Inc. | Pretreatment process for plasma immersion ion implantation |
| US7727866B2 (en) * | 2008-03-05 | 2010-06-01 | Varian Semiconductor Equipment Associates, Inc. | Use of chained implants in solar cells |
| US10227693B1 (en) * | 2018-01-31 | 2019-03-12 | Axcelis Technologies, Inc. | Outgassing impact on process chamber reduction via chamber pump and purge |
-
1983
- 1983-02-21 JP JP58027170A patent/JPS59152621A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59152621A (ja) | 1984-08-31 |
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