JPH0231492B2 - - Google Patents
Info
- Publication number
- JPH0231492B2 JPH0231492B2 JP58242092A JP24209283A JPH0231492B2 JP H0231492 B2 JPH0231492 B2 JP H0231492B2 JP 58242092 A JP58242092 A JP 58242092A JP 24209283 A JP24209283 A JP 24209283A JP H0231492 B2 JPH0231492 B2 JP H0231492B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- solution
- temperature
- liquid phase
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58242092A JPS60134417A (ja) | 1983-12-23 | 1983-12-23 | 液相成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58242092A JPS60134417A (ja) | 1983-12-23 | 1983-12-23 | 液相成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60134417A JPS60134417A (ja) | 1985-07-17 |
| JPH0231492B2 true JPH0231492B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-07-13 |
Family
ID=17084174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58242092A Granted JPS60134417A (ja) | 1983-12-23 | 1983-12-23 | 液相成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60134417A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55148421A (en) * | 1979-05-09 | 1980-11-19 | Fujitsu Ltd | Refining method of chemical compound semiconductor crystal |
| JPS5927118B2 (ja) * | 1980-06-26 | 1984-07-03 | 富士通株式会社 | 半導体発光装置の製法 |
| JPS57175796A (en) * | 1981-04-18 | 1982-10-28 | Omron Tateisi Electronics Co | Liquid phase epitaxial growth |
| JPS5812324A (ja) * | 1981-07-15 | 1983-01-24 | Toshiba Corp | 液相エピタキシヤル成長法 |
-
1983
- 1983-12-23 JP JP58242092A patent/JPS60134417A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60134417A (ja) | 1985-07-17 |