JPH02312201A - Resistance composition and circuit board and electronic device using same - Google Patents

Abstract

PURPOSE:To obtain a resistance capacitance for non-oxide ceramic showing stabilized resistance characteristics even when thermal stress is applied by a method wherein crystalline glass, containing a proper quality of lead oxide, is used as an inorganic bonding agent. CONSTITUTION:An inorganic bonding agent is formed into crystalline glass, which contains lead oxide of 3 to 15wt.%, having a desirable softening point of 600 deg.C or higher and thermal expansion coefficient of 4.0X10<6>/ deg.C or lower. Also, this crystalline glass is mainly composed of SiO2, B2O3 and ZnO, and besides, one or more kinds selected from MnO, WO3, ZrO2, Cr2O3 and TiO2 can be contained therein. The crystalline glass containing such lead oxide as above-mentioned contributes to the highly minute and firm adhesion between a non-oxide ceramic substrate and the resistor provided on the substrate. As a result, a resistance composition for non-oxide ceramic showing stabilized resistance characteristics can be obtained even when thermal stress is applied.

Description

[Detailed description of the invention]

[Industrial Application Field] The present invention relates to a resistor composition for non-oxide ceramics, a circuit board in which a resistor is formed using the same, and an electronic device equipped with the circuit board. [Prior Art] Non-fertilized ceramics, such as aluminum nitride and silicon carbide, are attracting attention as substrate materials for electronic components as sintering technology and refining technology have improved in recent years. [
l 5 IEEE Trans,on Cjl,M,T
,. CHMT-8, Nci2, pp. 247-252 (1985
AIN 5ubstrates wit
h High Thermal Conductivity
In the paper entitled ``Y'', high-density, highly purified aluminum nitride powder was pressure sintered to achieve a thermal conductivity of 160W/
m-K (chamber@), electrical resistivity 5×10”Ω・all(
room temperature), dielectric constant F3, 9 (IM Hz), bending strength 50 kg/m", thermal expansion coefficient 4.3 x 1
It is disclosed that a property of 0''-'/''C (room temperature - 400°C) is imparted. Also, [2] Special Publick Publication No. 58-159
In No. 53, a pressurized sintered body of silicon carbide doped with beryllia has a thermal conductivity of 0.25 caQ/aa-5・℃ or higher, a resistivity of 107Ω・1 or higher (room temperature), and a thermal expansion coefficient of 4×10.
Disclosed is a substrate for an electrical device that has a property of -6/'C or less. the above

Non-oxide ceramic sintered bodies such as aluminum nitride and silicon carbide as shown in [11 and [2]] are expected to contribute to improving the performance of electronic devices by taking advantage of their various characteristics. . Hybrid IC is one of the leading fields of non-oxide ceramics application.
Development of thick film compositions necessary for forming this circuit is underway. In a hybrid IC substrate, it is essential that a resistor is formed together with the conductor wiring in order to form one circuit. Previously, (3) JP-A-62-216
No. 301 discloses a resistive composition comprising a conductive powder, an inorganic binder, an organic vehicle, and optionally a metal oxide additive, wherein the inorganic binder is S, +, Oz+A QxO3.
+ BzOs, Ca O, Z n○ and T-SiO2
Crystalline glass frit mainly composed of □, preferably S
-SiO2□(28-42wt%)-AQ20a(10
-22wt%)-BzOa(15wt%)-CaO(
14-25wt%)-ZnO(15-25wt%)-T
a composition that is a glass frit of iOx (6-15 wt%);

[41] Japanese Patent Laid-Open No. 136601/1983 discloses a thick film resistor in which a porous resistive film is provided on an aluminum nitride substrate. Here, in order to form a porous resistance film, (1) when using RuOz as the conductive particles, 5-SiO2□-AQxOs-BzOa-Ca
O-ZnO-T-SiO2□-MgO system or S-SiO
2□-AQxOs-BxOs-CaO-ZnO-Tie
When using s-type crystalline glass frit and (2) Ag or Pd powder together with Ru0z as conductive particles,
A Pb0-BzOa-Si○2 type amorphous glass frit is used. [5] Proc. 5th International Microel
electronics conference. “Tec” in pp. 137-141 (1988)
hnical progresses for
a thick film resistor f
or aluminum n1tride 5u
bsrateswithdevitrifiable
In a paper titled ``SiS102 (10-16%)-BzOa (19-2
RuO for aluminum nitride using 6wt%)-ZnO (60-70wt%) glass as a glass frit
2 series thick film resistor is disclosed. [61 Mitsubishi Electric Technical Report, VoQ, 54. Nn10゜696
- “Hybrid IC” on page 699 (1980)
In the paper titled ``Igniter'', a power transistor element and a circuit area carrying passive elements for controlling it were mounted on separately divided alumina ceramic substrates, and the electrical communication between them was established using metal m-wire. [7] Proceedings of the 1st Microelectronics Symposium, pp. 167-172 (1, 9).
In a paper titled "VHF band power amplification module with a single AIN substrate configuration" in 1985), a power transistor element and passive elements including a resistor for controlling it were mounted on a single aluminum nitride substrate, An electronic device for VHF band power amplification is disclosed which is provided with thick film wiring for forming a circuit. [Problem to be solved by the invention] As in the above (41(b)), Ag as conductive particles
When powder is used, the conductive network is likely to be destroyed due to Ag migration. In this case, the stability of the resistor during operation is likely to be significantly impaired. Therefore, oxide-based conductive particles are preferable as the conductive particles of the thick film resistor.
L), [4] It is advantageous to use oxide-based particles as the conductive particles, as in (b) and [5]. What these prior art technologies have in common is that by using crystalline glass as an inorganic binder and forming a porous resistance film, gas generated by the reaction between non-oxide ceramics and the inorganic binder can be easily released. The main point is to avoid foaming of the resistor and agglomeration of the conductive particles. Also, [31°[4]
In cases (b) and [51, glass that does not contain lead oxide is used as the inorganic binder. Based on the knowledge that it is highly reactive with ceramics and easily generates gas. However, according to studies conducted by the present inventors, glass that does not contain lead oxide has extremely poor reactivity with non-oxide ceramics, and the adhesion between the ceramics and the resistor is likely to be significantly impaired, resulting in resistance to resistance during operation. It has been found that the properties are difficult to stabilize. Specifically, the resistance value increases sequentially as thermal stress is applied during operation. The cause of this is the disconnection of the conductive network due to an increase in microcracks in the resistor. Such instability in resistance characteristics is extremely fatal in electronic devices such as those used for automobile engine control in [6] and VHF band power amplification in [7], and aluminum nitride has various excellent physical properties. However, this is the main reason why the above-mentioned electronic devices have not been put into practical use or commercialized. Therefore, the present invention compensates for the above-mentioned drawbacks of the prior art,
An object of the present invention is to provide a resistance composition for non-oxide ceramics that exhibits stable resistance characteristics even when thermal stress is applied, a non-oxide ceramic circuit board using the same, and an electronic device incorporating the circuit board. purpose. [Means for Solving the Problems] The non-oxide ceramic resistance composition of the present invention comprises a non-oxide composition consisting of a conductive substance, an inorganic binder, an organic vehicle, and optionally a metal oxide additive. In the resistance composition for ceramics, the inorganic binder contains 3 to 1 part of lead oxide.
5w%, preferably has a softening point of 600°C or higher and a thermal expansion coefficient of 4. Basically, it is a crystalline glass with OX 10"-8/'C or less. This crystalline glass has 5-SiO2□. BzOa and ZnO are the main components, and further L: M n O + W
It can contain one or more of Oa+Zr0z, Crz○s, Tic)z. In particular, 5-SiO2□15% or less, BzOal 5~
30%, Zn0 is preferably 50-80%, and MnO etc. is 5%.
% or less is preferable. The non-oxide ceramic circuit board of the present invention is a substrate in which a resistor made of a conductive substance, an inorganic binder, and optionally a metal oxide additive is provided on a non-oxide ceramic, Basically, the inorganic binder of the resistor is a crystalline glass containing 3 to 15% lead oxide, a softening point of 600°C or more, and a thermal expansion coefficient of 4.0X10-8/"C or less. In the electronic device of the present invention, a resistor made of a conductive substance, an inorganic binder, and optionally a metal oxide additive is provided on a non-oxide ceramic, and the inorganic binder of the resistor is oxidized. Contains 3 to 15 wt% lead and has a softening point of 6oO
℃ or higher and the coefficient of thermal expansion is 4. OX 10-8/”C
Basically, the following non-oxide ceramic circuit boards made of crystalline glass are incorporated into electrical circuits that handle frequencies of 50 MHz or higher or that have elements with power consumption of 0, 2 W/all" or higher. [Function] In the present invention, the crystalline glass containing lead oxide contributes to dense and strong adhesion between the non-oxide ceramic substrate and the resistor provided on the same substrate. In order to achieve strong adhesion, an appropriate reaction with glass, which is the main component of the resistor, is essential.As a result of various studies, the inventors found that a crystalline material containing an appropriate amount of lead oxide By using glass as an inorganic binder, (1) foaming of the resistor and aggregation of conductive particles can be avoided;
It was confirmed that (2) strong adhesion with non-oxide ceramics was achieved, and (3) cutting of the conductive network was avoided and a resistor exhibiting stable resistance characteristics could be obtained. The resistor in the present invention is formed by the following mechanism. (a-1) Lead oxide in the glass reacts with the non-oxide ceramic and wets its surface, forming a new glass layer that contributes to adhesion between the ceramic and the resistor, and (a-2) creating a new glass layer. Further reaction is suppressed by the shielding effect of the glass layer, and (a-3) At this time, a small amount of gas generated with the formation of the new glass layer is released through the fine pores caused by the crystallization of the glass, (
a-4) Crystallized glass itself has a low coefficient of thermal expansion, and it is possible to make the coefficient of thermal expansion of a composite composed of conductive particles and glass equal to or smaller than that of non-oxide ceramics. It has the role of adjusting to The main reason for the realization of (1) above is (a-2) above.
and (a-3) mechanism, the main reason why (2) above was realized is the above mechanism (a-1), and the main reason why the above (3) was realized is because the above mechanism (a-4) was realized. Based on effective results. In the present invention, the inorganic binder is (a) 3 to 15w
A crystalline glass containing % lead oxide, comprising (b)
Softening point: 600°C or higher and (c) coefficient of thermal expansion: 4.
It is preferable to have OX 10-6/℃ or less, (a
) is specified because if the content of lead oxide is less than 3 wt%, the reaction of glass with non-oxide ceramics is insufficient, and a new glass layer required to achieve strong adhesion is not generated. If the amount exceeds 15 wt%, the reaction of the glass with the non-oxide ceramics will be excessive, and the generation and release of gas due to the reaction will not be balanced.
In other words, the shielding effect of the generated new glass layer suppresses the release of gas, which tends to cause foaming of the resistor and aggregation of conductive particles. The reason (b) is specified is that when the softening point is lower than 600°C, the softening and flow of the glass are promoted, resulting in excessive reaction with non-oxide ceramics, resulting in foaming of the resistor and aggregation of conductive particles. This is because it becomes another cause of this. Furthermore, the reason (c) is specified is that the coefficient of thermal expansion is 4. Ox
If it exceeds 10-8/'C, tensile stress is applied to the glass, which tends to cause its properties to become unstable.The coefficient of thermal expansion of the resistor as a composite body must be equal to or smaller than that of non-oxide ceramics. This is because it is difficult. In the present invention, the thermal expansion coefficient equivalent to that of non-oxide ceramics means the following: 6αn=(ac±1)X1
0-6 ("C-1) where αR: Coefficient of thermal expansion of the resistor αC: Coefficient of thermal expansion of non-oxide ceramics Under conditions where (c) above is not satisfied, the thermal expansion coefficient This is due to the fact that it is extremely difficult to avoid the increase in microcracks that accompany this. An electronic device using a circuit, that is, an igniter module device, and a power distribution device using the electronic device will be explained.In obtaining the circuit board and the device, R as a conductive material
A resistance composition containing as basic components u0z powder (average particle size 0.1 μm), glass powder (average particle size 0.2 μm) as an inorganic binder, and ethyl cellulose resin and α-terpineol as an organic vehicle, It was produced by cross-wiring using three rolls. The crystalline glass powder used here was Pb0 (6w t%) -S i □z (9w
t%)-B20a (20wt%)-ZnO (60wt%
)-MnO (2wt%) WOs (2wt%), and its thermal expansion coefficient alone is 3.5 x 10''B/
℃ and has a softening point of 610℃. Further, the organic vehicle is added in an amount of about 25 wt% in the above composition. Figure 1 shows a resistor obtained by firing the above composition in air at 850°C and IQmin.
02 powder + glass powder)] This is the relationship between weight ratio, resistance value, and coefficient of thermal expansion. The resistance value shows a smaller value as the weight ratio increases, and the thermal expansion coefficient shows a larger value as the weight ratio increases. Between the weight ratios of 0.2-0.8, the resistance values are set in the range of 10 Ω/Lo-IMΩ/mouth, and the thermal expansion coefficients are in the range of 3.8-5.5X LO''-8/°C. tA91. Figure 2 shows the resistance value and temperature coefficient of resistance (TCR) of the above resistor.
This is the relationship. Curve A in the same figure is TCR! Curve B shows the case where no metal oxide is added to adjust the IJ, and the curve B shows the case where M and nO2 powders are added to adjust the TCR. In the case of curve A, the resistance value is about 2, but it shows a large value below 07 mouths, and has a practical problem. On the other hand, curve B has a small TCR of ±200 ppm/'C, which is not a problem in practice, even in the low resistance region of 2.07 or less. This is due to the effect of adding Mn0z for TCR adjustment, but M,
Substitutes for nO2 include copper oxide, manganese oxide, lanthanum oxide, neodymium oxide, and niobium oxide. Vanadium oxide, titanium monide, zirconium oxide, antimony dioxide, samarium oxide, praseodymium oxide, aluminum oxide, chromium oxide, iron oxide. Examples include cobalt oxide, tantalum oxide, nickel oxide, and silicon oxide. In addition, ethyl cellulose resin as an organic vehicle and α
- Terpineol is an aliphatic alcohol, esters of such alcohols such as acetate and propionate, terpenes such as pine oil. It can be replaced with β-terpineol, ethylene glycol, monoacetate, polymethacrylate, etc. FIG. 3 shows a circuit board 10 manufactured using the above resistance composition.
It is. A gold ELM (silver-palladium, 13 μm thick) region 101 for a power device mounting portion and a wiring metal layer (silver-palladium, 13 μm thick) region 111 for forming a power device control circuit are provided on an aluminum nitride sintered substrate 100. ,
A resistor 113A (1oo
-750Ω). In the region 101, a transistor chip (5×5 nm, 5 W, 15
A) 103 is Pb-5wt%5n-1,,5wt%Ag
Six pieces are mounted in parallel with solder 104 (not shown). An overcoat glass 113B (not shown) is provided on the wiring metal layer region 111 and the resistor 113A, and the chip capacitor 113C and mini mold transistor 113d are made of Pb-5wt% 5n-1,
It is provided with 5wt%Ag solder 114 (not shown). The metal layer regions 101 and 111 and the transistor chip 103 and the metal layer region 111 are connected by thin aluminum wires 105 (diameter 350 μm). A metal layer (silver-palladium, thickness 13
.mu.m) 121 is provided, and glass 123 (same quality as the glass 113B) is provided in a portion excluding a region substantially corresponding to the portion where the transistor chip 103 is mounted. The metal layer regions 101, 111. Metal layer 121 and resistor 1
13A is 850℃, lQmin after printing thick film paste.
Overcoat glass 11 obtained by firing in air
3B, 123 was obtained by calcination in air at 600° C.+1C)+in. Note that the substrate 100 used contained a trace amount of Y.
Aluminum nitride powder together with ZO3 powder at 1700℃
A sintered body (thickness 0, 8 nu,
Thermal conductivity is 170 W/m-, and resistivity is 1013Ω·0 or more). FIG. 4(a) shows each of the resistors 113A
150℃ temperature cycle test (1000 times) and 150℃
This is an example showing the change in resistance value due to a high temperature storage test (1000 hours) at ℃. In both tests, the resistance value was ±
It has stability within 0.5%, which poses no practical problem. The reason why such stable characteristics were obtained is that the mechanisms (a 1 ) and (a-4) described above function effectively. In addition, a power seven times the rated value was repeatedly applied to the resistor 113A by intermittent energization, but even after 90,000 intermittent energizations, the resistance value changed within ±0.5% and no practical problems were found. . This is also (a −1) − (a
-4), but in addition, heat is effectively dissipated via the aluminum nitride substrate 100, and the temperature rise of the resistor 113A is suppressed to a small extent, which is caused by the application of an electric field at high temperatures. This is due to the fact that the destruction of the conductive network could be avoided. Furthermore, FIG. 4(b) is 80'C. This is an example showing the resistance value transition of the resistor 113A in a high temperature test (1000 hours) at 90% RH. In this test, a sample was used in which overcoat glass 113B was not provided on resistor 113A. Even after the test, the resistance value remained within ±0.5%, and there were no practical problems. Note that the metal layer regions 101 and 111 contain silver-palladium as a gold general component and the aluminum nitride sintered body substrate 100.
Lead oxide-containing glass frit (S 1oz (14,8 wt%)-AQzOa (1,5
wt%)-PbO(69,4wt%)-B2O2(2,
1 wt%)-ZnO (17.8 wt%)]. This glass frit. The amount added is adjusted to prevent excessive reaction. The resistance composition used in this example was made of this metal, IWIOl.
, 111, and there are no defects such as bubbles in the contact area between the resistor 113A and the metal layer 111. In FIG. 5, 200 is an igniter module device for controlling an automobile engine as an electronic device, and a circuit board 10 is mounted on a package 201 made of nickel-plated aluminum via solder (PB-60wt% 5N) 202. There is. This soldering was carried out through a belt furnace at 240°C with a sheet of the above solder interposed together with flux.
Next, a silicone resin (not shown) was filled into the package 201 and cured, and then a cap 203 was attached to complete the module device 200 having the circuit configuration shown in FIG. The thermal resistance between the transistor chip 103 and the package 201 of the device 200 was as low as 0.9°C/W. Furthermore, the same device 200 was subjected to 2000 temperature cycles of -55 to 150°C, and the transistor chip 103 was subjected to 900 temperature cycles of 50 to 125°C by intermittent energization.
00 times, but no change in the thermal resistance was observed. Furthermore, the transistor chip 103 and its control circuit are provided close to each other on the same substrate 100, making it smaller at approximately 315 mm compared to conventional devices in which the power element section and the control circuit are provided on separate substrates. A modular device was obtained. Note that the module device 200 was attached to a housing together with other circuit devices, and a power distributor device that could guarantee the specifications shown in Table 1 was completed. Table 1, FIGS. 7(a) and 7(b) are diagrams showing the relationship between the output voltage and input terminal of the device and the rotation speed of the power distributor. The power distribution device obtained in this example (curve A) has a lower overall output voltage than the power distribution device (curve B) incorporating a conventional module device in which the power element part and the control circuit are provided on separate boards. High values are obtained within the rotational speed range and with a small input current. Furthermore, in the idle rotation range, a high output voltage is obtained with a smaller input current than conventional devices. This shows that in the power distribution device of this embodiment, it is possible to suppress power consumption in a low speed rotation range and obtain a sufficient coil cutoff current in a high speed rotation range. FIG. 7(b) shows the relationship between the circuit closure rate and the distributor rotation speed of the device. This circuit closure rate control is an important factor in suppressing power consumption in the low-speed rotation range and obtaining sufficient coil breaking current in the high-speed rotation range.6 The figure shows the case where the battery voltage is used as a parameter, This shows that the closed circuit rate control is optimal even with fluctuations in . Although the power distribution device was installed in the engine room where the temperature at its mounting portion was 80° C., the circuit closure rate was well controlled. In this example, the circuit board has a unit area (1ff1m
A power device with a power consumption of 0.2 W per unit was installed, and the performance of the power distribution device shown in Table 1 was obtained. Equivalent performance can be obtained by reducing the chip size of the power device, i.e. This was obtained even when a power element with a power consumption of 0.56 W per unit area (low2) was mounted on the circuit board. [Example 2] In this example, the power element and the control circuit for controlling it were mounted on the same board. The following describes a circuit board mounted on a circuit board, an electronic device to which the circuit is applied, that is, a high-frequency voltage amplification circuit device, and a high-definition television device to which the electronic device is applied. It is a cross-sectional view of a main part of a circuit board that can be mounted on a board.As shown in the figure, a circuit board 10 has a metal layer (silver-palladium, thickness 13 μm) region 101 for a power element mounting part and a region 101 for a power element mounting part. A metal IjI (silver-palladium, 13 μm) region 111 for forming a power element control circuit is mounted on an aluminum nitride sintered substrate 100.A field effect transistor chip (2X2+n+
+. 5w, 15A) 103 is Pb-5wt%5n-1,5w
t%Ag solder 104 (not shown), and a resistor 113A is mounted in the region 111. An overcoat glass 113B is provided by printing and baking a thick film paste, and a chip capacitor 113C and a diode chip 113d are made of pb-5wt%5n-1,
It is provided with 5wt%Ag solder 114 (not shown). gold y1. Between the layer regions 101 and 111 and between the transistor chip 103 and the metal layer region 111, there is a deposit of #! (diameter 35 μm) 105. Almost the entire surface of the aluminum nitride sintered substrate 1oO on which no elements are mounted is also coated with a metal layer (silver-palladium, thickness 1
3 μm) 121 is provided, and the transistor chip 103
A glass 123 (same quality as the glass 113B) is provided in a portion except for an area that approximately corresponds to the portion where the glass 113B is mounted. The circuit board 1o was manufactured in the same manner as in Example 1, but
The difference from Example 1 is that PbO (6w
t%)-S-SiO2□(9w t%)-8203(2
0wt%)-Zn○(60wt%)-MnO(2wt%
%)-WO3 (2 wt%) and P
b O(6Q w j%)-S-SiO2□(8wt
%) -BzOa (12w t%) -ZnO (IQwt
%)-ZrOz (8wt%)-Crz03 (2wt%)
A resistive composition was used in which powder (particle size: 2.0 μm) was prepared by mixing amorphous glass having the following composition at a weight ratio of 3:1. The resistor 113A was subjected to the same temperature cycle test (1000 times) as in Example 1, a high temperature several hundred test (1000 hours), a high temperature and high humidity test (1000 hours), and an intermittent energization test (900 times).
00 times) was applied. In all tests, the resistance value was within ±0.5% of the initial value, which was stable enough for practical use. Such resistance value stability characteristics were obtained only as a result of the above-mentioned mechanisms (a-1) to (a-4) acting effectively. Furthermore, the porous parts of the resistor were filled by the flow of the amorphous glass (the voids disappeared), and material transfer and destruction of the conductive network due to electric field concentration in the voids were avoided, which also contributed to the above stability. ing. Similar to the first embodiment, the circuit board 10 is mounted on a package 201 made of aluminum plated with nickel (solder).
It was loaded via Pb-60wt%5n)202. This soldering was carried out through a belt furnace at 240 DEG C. with a sheet of the above solder interposed with flux. Next, after filling and curing the silicone resin in the pan cage 201, the camp 203 was attached to complete the high frequency voltage amplification circuit device 200. FIG. 9 shows the input voltage waveform and output voltage waveform of the device 200. As is clear from this, the output voltage is 35V
A value 50 times greater than the input voltage of 0.7V is obtained, and the output voltage waveform is also 0.2ns for both rise and fall.
The following time constants are shown. That is, the above device 200 is fully usable for high frequency voltage control in the 250 MHz band. The first reason why the device 200 is able to follow such high-speed signals is that the electrical communication paths between the transistor chip 103 and its peripheral circuits and between the control circuit wiring are shortened as much as possible. In particular, the electrical communication path could be shortened by forming a practical thick film resistor in non-oxide ceramics, and as a result, the size of the resistor could be reduced based on efficient heat dissipation. This is due to the fact that it has become possible to downsize. Note that by adjusting the circuit constants, specifically the resistance value of the resistor 113A, the device 17200 can be used to
High-frequency voltage control from MHz to I GHz was attempted, and it was confirmed that the amplification characteristics were sufficiently usable for practical use. The high frequency voltage amplification circuit device 200 finally has a pixel 2
It was incorporated into 000x2000 television equipment. As a result, it was confirmed that the above device [200] is effective in increasing the definition of image display. [Example 3] In this example, a circuit board 10 and an igniter module mounting shield 200 using the same were completed in the same manner as in Example 1. The non-oxide ceramic substrates used are boron nitride ceramics, silicon carbide ceramics, and silicon nitride ceramics. The resistor on the circuit board 10 showed the same performance as in Example 1. This means that the resistance composition of the present invention can be applied to the above-mentioned ceramics other than aluminum nitride. Further, the igniter module device 200 using the circuit board 1o described above and the power distributor device equipped with the above igniter module device 200 also exhibited the same performance as in Example 1. In the examples, a resistive composition using Ru and Oz as conductive substances was described, but the present invention is not limited to this. Ru0
Conductive substances that can replace z include metal oxides other than ruthenium (Iroz, Rh0z, NbzOa, etc.), pyrochlore-type multicomponent oxides containing ruthenium (LaRuOa, CaRu○3゜S rRu○
s, BaRuOs, BaRuO7゜PbzRuzOe,
PbzRuzOe, s, T Q 2RLI207°C
ao, aSro, sRu○8, etc.), pyrochlore-type multicomponent oxides that do not contain ruthenium (B i 2Rh 20
B, +1°PbzRhzot, Pbzl rz○8.
P b 2Ru 20B, a. Pbzoszo7. TQ2I rz07. T Q2Rh
20y. TQzOs207, etc.), metal hole borides (Sc, Y, La
. Ce, Pr, Nd, Sm, Eu, Gd, Th, Dy. Ho, Er, Tm, Yb, Lu hexaboride), tin oxide,
Examples include metal silicides. Further, it is possible to arbitrarily combine the above-mentioned conductive substances including RuOz as necessary. Therefore, one circuit board 10 and an electronic device 20
0, there is no problem in using a resistor containing the above-mentioned conductive substance in the electric circuit. A resistance composition for non-oxide ceramics of the present invention. In circuit boards and electronic devices, the inorganic binder must contain 3 to 15 wt% lead oxide. However, the components of the inorganic binder other than lead oxide have a softening point of 6.
00℃ or higher and the coefficient of thermal expansion is 4. Ox10-6/”C
There are no particular limitations as long as the following conditions are met. That is, Si. AQ, B, Ca, Zn, Tin Mg+ Ba, Fe. Sr, Na, Cr, Mn, Li, Bi, V. Oxides such as Cd and Co may be used in any combination as required. In the circuit board and electronic device of the present invention, the non-oxide ceramic substrate is made of aluminum nitride, boron nitride,
It is not limited to cases where the main components are silicon carbide and silicon nitride. For example, in the present invention, (1) the portion on which the resistive composition is fired is at least one selected from the group consisting of aluminum nitride, boron nitride, silicon carbide, and silicon nitride.
When consisting of seeds, (2) aluminum nitride, boron nitride. When at least one selected from the group of silicon carbide and silicon nitride is combined with at least one selected from the group of aluminum oxide and beryllium oxide, and (3) aluminum nitride. Even when the substrate is composed of two or more substances selected from the group of boron nitride, silicon carbide, silicon nitride, aluminum oxide, and beryllium oxide, it is included in the scope of the non-oxide ceramic substrate. In the circuit board and electronic device of the present invention, the power element and its control circuit element are mounted on the same substrate, and the effects thereof are maximized. However, the present invention is not limited to this case, and the power element may not be mounted. The electronic device of the present invention is applied to, for example, the igniter module device 200 in the first embodiment, the high frequency voltage amplification circuit device 200 in the second embodiment, the power distributor device in the first embodiment, and the television device in the second embodiment. [Effects of the Invention] According to the present invention, a resistance composition for non-oxide ceramics exhibiting stable resistance characteristics even when thermal stress is applied;
A non-oxide ceramic circuit board using this and a high performance and highly reliable electronic device incorporating the circuit board can be obtained.

[Brief explanation of drawings]

Fig. 1 is a diagram showing the relationship between resistance value and the amount of Ru0z in the resistor, Fig. 2 is a diagram showing the relationship between TCR and resistance value, and Fig. 3 is a diagram showing the relationship between the resistance value and the amount of Ru0z in the resistor. A perspective view of the electronic device, FIGS. 4(a) and 4(b) are diagrams showing the relationship between resistance value change and the number of temperature cycles or high temperature exposure time, FIG. 5 is a sectional view of the electronic device according to the present invention, Figure 6 is the electric circuit diagram of Figure 5, and Figures 7 (a), (b), and (C) are the relationships between the distributor rotation speed, output voltage, input current, and circuit ratio in the device shown in Figure 5. FIG. 8 is a cross-sectional view of an electronic device having a power element and a control circuit, and FIG. 9 is a graph showing input voltage and output voltage waveforms. 10... Circuit board, 100... Sintered body board, 103
...Transistor chip, 111... Wiring metal layer,
113 Agent Patent Attorney Ogawa Pf! Man (72,) (7,
) Figure 1 (Ru02/RuO2 + glass) weight ratio Figure 3 Figure 4 (a) Figure 5 Figure 6 Figure 1b Figure 7 Distributor rotation speed (rpm) (c) Distributor rotation speed (rpm) 8 Figure 9 Time (5ns/div)

Claims (8)

[Claims] 1. In a resistive composition comprising a conductive substance, an inorganic binder, an organic vehicle, and optionally a metal oxide additive, the inorganic binder is mainly composed of ZnO-B_2O_3-SiO_2□ containing 3 to 15 wt% lead oxide. A resistance composition characterized in that the component thereof is crystalline glass. 2. In claim 1, the conductive substance is ruthenium oxide, metal oxide other than ruthenium, pyrochlore type multicomponent oxide containing ruthenium, pyrochlore type multicomponent oxide not containing ruthenium, tin oxide, and metal. A resistance composition comprising at least one member selected from the group of silicides. 3. In claim 1 or 2, the metal oxide additive is manganese oxide, copper oxide, lanthanum oxide, neodymium oxide, niobium oxide, vanadium oxide, titanium oxide, zirconium oxide, antimony oxide, samarium oxide, or A resistance composition comprising at least one member selected from the group consisting of praseodymium, aluminum oxide, chromium oxide, iron oxide, cobalt oxide, tantalum oxide, nickel oxide, and silicon oxide. 4. In a circuit board in which a resistor made of a conductive substance, an inorganic binder, and optionally a metal oxide additive is provided on a non-oxide ceramic sintered body, the inorganic binder binds lead oxide. ZnO-B_ containing from 15 wt%
A circuit board characterized in that it is a crystalline glass whose main component is 2O_3-SiO_2. 5. In any one of claims 1 to 4,
The non-oxide ceramic is (1) at least one selected from the group consisting of aluminum nitride, boron nitride, silicon carbide, and silicon carbide, or (2) from the group consisting of aluminum nitride, boron nitride, silicon carbide, and silicon nitride. A complex of at least one selected from the group of aluminum oxide and beryllium oxide, or (3)
A circuit board made of two or more materials selected from the group of aluminum nitride, boron nitride, silicon carbide, silicon nitride, aluminum oxide, and beryllium oxide. 6. 6. The circuit board according to claim 4, wherein the resistor is connected to a conductive metal wiring formed by adding glass frit containing lead oxide. 7. A resistor consisting of a conductive substance provided on a non-oxide ceramic substrate, an inorganic binder, and optionally a metal oxide additive is provided on a non-oxide ceramic sintered substrate, and the resistor A circuit board whose inorganic binder is crystalline glass containing 3 to 15 wt% lead oxide, a softening point of 600°C or higher, and a thermal expansion coefficient of 4.0×10^-^6/°C or lower, An electronic device characterized in that it is incorporated into an electric circuit having a frequency of 50 MHz or more or a semiconductor element having a power consumption of 0.2 W or more per mm^2. 8. 8. The electronic device according to claim 7, wherein the electric circuit is a circuit for controlling the rotation speed of an automobile engine or for amplifying an electric signal of a display device.