JPH10256730A - Multilayer ceramic board - Google Patents

Abstract

PROBLEM TO BE SOLVED: To optimize relative permittivity of an insulating base material for a board of a high-frequency circuit by incorporating dielectric, Al2 O3 , a first glass for precipitating the dielectric in the case of baking at a specific temperature or lower and a second glass reacted with Al2 O3 in solid solution with it in the base material. SOLUTION: An insulating base material 1 contains a dielectric, Al2 O3 , a first glass and a second glass. The first glass contains oxides of elements necessary for precipitating the same dielectric, and generates a liquid phase at 1,000 deg.C or lower. Accordingly, relative permittivity of the material 1 can be ensured. The second glass generates a liquid phase at 1,000 deg.C or lower, easily reacts with Al2 O3 particles of a dispersion strengthening means of the material 1, and facilitates solid solution in the first glass, and hence the material 1 can hold transverse rupture strength as a board. Therefore, the relative permittivity can be optimized for a board in a high-frequency circuit, and an inner layer via electrode 2 with a metal having a low melting point and low resistance as a base and an inner layer line electrode 3 can be disposed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer ceramic substrate for mounting a semiconductor LSI and chip parts for a high-frequency circuit and for interconnecting these parts.

[0002]

2. Description of the Related Art In recent years, high-density mounting of electronic equipment circuits and high-density wiring boards have been promoted in response to demands for miniaturization and weight reduction of portable information terminal equipment. In high-density mounting technology, flip-chip mounting for mounting a semiconductor element directly on a substrate has also been developed.

On the other hand, in the case of a wiring board, there is a technique of forming a multilayer resin board and a three-dimensional wiring technique using an inner layer via electrode wiring in a ceramic substrate. In particular, in information equipment, the characteristics of the dielectric constant and the dielectric loss tangent of a wiring board become important as a high-frequency circuit is used, and the amount of information is increased and information is processed at higher speed. That is, when focusing on the signal speed and the signal attenuation rate of the circuit in the high-frequency circuit, it is required that the dielectric constant of the substrate is constant in a wide frequency band and the dielectric loss tangent is small. When downsizing the portable information terminal device, as shown in FIG. 6, the wiring width can be narrowed as the relative dielectric constant of the high-frequency circuit board increases, so that the board can be downsized. Further, in the micro-wiring forming technology, the current limit of the wiring is 50 μm, so that when the relative dielectric constant of the substrate is 20 to 30, the size of the high-frequency circuit substrate can be minimized.

[0004] Table 1 shows various characteristics of materials having a relative dielectric constant of 20 to 30 used for a conventional resonator. If such a material can be used for a high-frequency circuit board, the module can be reduced in size.

[0005]

[Table 1]

[0006]

However, the use of the dielectric material used in the above-described conventional resonator for a multilayer ceramic substrate has the following two problems.

The first problem is that the conventional dielectric has low strength as a substrate. For a substrate of 10 mm square or more on which ordinary semiconductor elements, chip passive components, etc. are mounted, a flexural strength of about 250 MPa is required. 1
It is about 20 to 130 MPa and the strength is insufficient.

A second problem is that since the firing temperature of the conventional dielectric is as high as 1000 ° C. or more, an alloy of Ag or Cu having a low melting point and a low resistance cannot be used for the inner conductor. For this reason, the conventional dielectric must use W or Mo having a high melting point and a high resistance for the inner layer conductor, and particularly in a high frequency region, signal loss becomes a problem in circuit function, so that the range of use is limited. .

In order to solve such a problem, the present invention optimizes the relative dielectric constant of a substrate for a high-frequency circuit, maintains the flexural strength as a substrate, and applies a low-resistance metal to the inner via electrode or the inner line electrode. It is an object of the present invention to provide a multilayer ceramic substrate on which a conductor based on a ceramic can be arranged.

[0010]

According to a first aspect of the present invention, there is provided a multilayer ceramic comprising a plurality of insulating substrates, an inner via electrode, an inner line electrode, and a surface electrode. In the substrate, the insulating base material includes a dielectric and A
a first glass which contains l ₂ O ₃ and an element capable of forming a dielectric and generates a liquid phase when fired at 1000 ° C. or less to deposit a dielectric; and a first glass which generates a liquid phase when fired at 1000 ° C. or less. And a mixed material containing the second glass that forms a solid solution with the Al ₂ O ₃ and reacts with the Al ₂ O _3, and is fired at 1000 ° C. or lower.

According to the first invention, in firing the insulating base material, the dielectric constant of the insulating base material is optimized by the dielectric substance and the dielectric substance precipitated from the first glass for a substrate for a high-frequency circuit. Can be fired at a temperature of 1000 ° C. or less due to the generation of a liquid phase by the first glass and the second glass, and the second glass reacts with Al ₂ O ₃ and forms a solid solution with the first glass. A large amount of Al ₂ O ₃ can be dispersed in the mixed glass of the first glass and the second glass. Therefore, the insulating base material of the first invention can have a relative dielectric constant that is optimal for a substrate for a high-frequency circuit when fired at a temperature of 1000 ° C. or less, and has a sufficient amount of Al ₂ O ₃ dispersed therein. An internal via electrode and an internal layer line electrode based on a metal having a low melting point and a low resistance can be maintained because the bending strength can be maintained.

[0012] In the first invention of the present application, the dielectric, Al ₂
The contents of O ₃ , the first glass, and the second glass were adjusted to 15
~ 30wt%, 15 ~ 20wt%, 50 ~ 70wt%,
When it is configured to be 5 to 10 wt%, the relative dielectric constant of the insulating base material can be set to 20 to 30 (FIG. 2), and the transverse rupture strength can be set to 230 kgf / cm ² or more (FIG. 3). An internal via electrode and an internal layer line electrode based on Ag or Cu having a low melting point and low resistance can be provided.

If the dielectric content is less than 15 wt%, the relative dielectric constant of the insulating base material is less than 20, which is not preferable. If it exceeds 30 wt%, the relative dielectric constant of the insulating base material is more than 30, which is not preferable. If the Al ₂ O ₃ content is less than 15 wt%, dispersion strengthening becomes insufficient and the flexural strength of the insulating substrate decreases, and if it exceeds 20 wt%, sintering becomes insufficient and a large number of holes are formed in the insulating substrate. Are not preferred. If the first glass content is less than 50 wt%, the amount of liquid phase in the insulating base material during firing becomes small and sintering becomes insufficient, which is not preferable. If it exceeds 70 wt%, the second glass and Al ₂ O ₃ are mixed. It is not preferable because the reaction of The second glass content is 5w
If it is less than t%, Al ₂ O ₃ cannot be added in an amount of 15 wt% or more, and if it exceeds 10 wt%, precipitation of a dielectric substance from the first glass is undesirably hindered.

In the first invention of the present application, the dielectric is made of Nd
₂ TiO ₈ , BaTiSi ₂ O ₆ , Nd ₄ Ti ₉ O ₂₄ ,
_{Nd 4 Ti 3 O 8.7, BaO} · Nd 2 O 3 · 5TiO 2
It is preferable to include any one or more of these materials because the dielectric material has a very small temperature dependence of the relative dielectric constant, so that the relative permittivity of the insulating base material can be made small in temperature dependence.

In the first invention of the present application, the first glass is
SiO ₂ , TiO ₂ , one or more of Nd ₂ O ₅ and BaO, and Na ₂ O, K ₂ O, CaO, BaO,
At least one of ZnO and PbO, B ₂ O ₃ , M
When configured to include at least one of gO,
This first glass contains an oxide of an element necessary for depositing the same dielectric as the above-mentioned dielectric, and generates a liquid phase at a temperature of 1000 ° C. or lower, so that the relative dielectric constant of the insulating base material is secured, Firing at 1000 ° C. or lower can be made possible.

In the first invention of the present application, the second glass is
SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , Na ₂ O, K
_When it is configured to contain any one or more of ₂ O, CaO, BaO, MgO, ZnO, and PbO, the second glass generates a liquid phase at 1000 ° C. or lower, and is used for strengthening the dispersion of the insulating base material. Since it easily reacts with certain Al ₂ O ₃ particles and easily dissolves in the first glass, the insulating base material can maintain the bending strength as a substrate and can be fired at 1000 ° C. or less. .

According to a second aspect of the present invention, a plurality of insulating substrates are provided,
In a multilayer ceramic substrate including an inner via electrode, an inner line electrode, and a surface electrode, the insulating base material includes a dielectric, Al ₂ O _3, and an element capable of forming a dielectric.
A first glass that generates a liquid phase when firing at a temperature of 000 ° C. or less and deposits a dielectric, and a second glass that generates a liquid phase when firing at a temperature of 1000 ° C. or less and forms a solid solution with the first glass and reacts with the Al ₂ O ₃ The paste material before firing of the inner via electrode is made of a mixed material containing glass and fired at 1000 ° C. or lower. The conductive material is an Ag powder having an average particle size of 4.5 to 5.5 μm, and an Ag-Pd alloy powder. , Ag-Pt alloy powder, at least one glass, SiO ₂ as glass, Na
One containing at least one of ₂ O, K ₂ O, CaO, BaO, ZnO, and PbO, an ethylcellulose-based resin as a polymer material, and one or more of α-terpineol and butyl carbitol as a solvent And the contents of the conductive material, glass, polymer material, and solvent are 85 to 90 wt%, 2 to 4 wt%, and 0.8 to 1.5 w, respectively.
t%, 8 to 10 wt%.

According to the second invention, the same operation and effect as those of the first invention can be obtained, and the addition of glass can strengthen the bond between the inner via electrode and the insulating base material. Average particle size of powder is 4.5 to 5.5 μm
By this, the volume shrinkage rate of firing the inner via electrode can be made substantially the same as the volume shrinkage rate of firing the insulating base material, so that the insulating base material and the inner via electrode do not crack or peel during firing. Also, since a low-resistance conductive material can be used, the resistance value of the inner via electrode can be reduced.

The average particle size of the conductive material is 4.5 μm.
When smaller than the volume shrinkage of the firing of the inner layer via electrode is not preferable because it is larger than the volume shrinkage of the firing of the insulating base material,
If it is larger than 5.5 μm, the volume shrinkage rate of firing the inner via electrode is smaller than the volume shrinkage rate of firing the insulating base material, which is not preferable. If the conductive material content is less than 85 wt%, the resistance value of the inner via electrode becomes low, which is not preferable.
%, The bonding between the inner via electrode and the insulating base material becomes weak, which is not preferable. If the glass content is less than 2 wt%, the bond between the inner via electrode and the insulating base material is weakened, and if it is more than 4 wt%, the resistance value of the inner via electrode is undesirably low. The polymer material content is 0.8 wt%
Less than 1.5 wt.
%, The polymer material is vaporized in large quantities at the time of binder removal prior to firing, and the ceramic substrate is punctured. If the solvent content is less than 8 wt%, the viscosity of the paste material is too high to print the inner via electrode, and if it exceeds 10 wt%, the viscosity of the paste material is too low to print the inner via electrode.

According to a third aspect of the present invention, a plurality of insulating substrates are provided,
In a multilayer ceramic substrate including an inner via electrode, an inner line electrode, and a surface electrode, the insulating base material includes a dielectric, Al ₂ O _3, and an element capable of forming a dielectric.
A first glass that generates a liquid phase when firing at a temperature of 000 ° C. or less and deposits a dielectric, and a second glass that generates a liquid phase when firing at a temperature of 1000 ° C. or less and forms a solid solution with the first glass and reacts with the Al ₂ O ₃ The paste material before firing of the inner layer line electrode is made of a mixed material containing glass and fired at a temperature of 1000 ° C. or less, and has a mean particle size of 2.5 to 3.5 μm as a conductive material.
Ag powder, Ag—Pd alloy powder, Ag—Pt alloy powder, at least one of the above, SiO ₂ as glass, and N
a ₂ O, K ₂ O, CaO, BaO, ZnO, PbO, and any one or more of ethyl cellulose resin as a polymer material and α-terpineol or butyl carbitol as a solvent Including the above, the contents of the conductive material, glass, polymer material, and solvent are 83 to 88 wt%, 4 to 6 wt%, and 0.8 to 1.5 w, respectively.
t%, 8 to 10 wt%.

According to the third aspect, the same function and effect as those of the first aspect can be obtained, and the addition of glass can strengthen the bond between the inner layer line electrode and the insulating base material. The average particle size of the powder is 2.5-3.5μ
By setting m, the linear shrinkage factor of the firing of the inner layer line electrode can be made substantially the same as the linear shrinkage factor of the firing of the insulating base material, so that the insulating base material and the inner layer line electrode do not crack or peel during firing. Also, since a low-resistance conductive material can be used, the resistance of the inner layer line electrode can be reduced.

The average particle size of the conductive material is 2.5 μm
If it is smaller, the linear shrinkage rate of firing the inner layer line electrode becomes larger than the linear shrinkage rate of firing the insulating base material, which is not preferable.
If it is larger than 5 μm, the linear shrinkage rate of firing the inner layer line electrode is smaller than that of firing the insulating base material, which is not preferable. If the content of the conductive material is less than 83 wt%, the resistance value of the inner layer line electrode becomes low, which is not preferable.
Exceeding the range undesirably weakens the bond between the inner layer line electrode and the insulating base material. If the glass content is less than 4 wt%, the bond between the inner layer line electrode and the insulating base material is weakened, which is not preferable. If it exceeds 6 wt%, the resistance value of the inner layer line electrode is lowered, which is not preferable. The polymer material content is 0.8w
If the amount is less than 1.5%, the paste material cannot be kneaded, and
If the content exceeds wt%, a large amount of the polymer material is vaporized during binder removal prior to firing, and the ceramic substrate is punctured. If the solvent content is less than 8 wt%, the viscosity of the paste material is too high to print the inner layer line electrode, and if it exceeds 10 wt%, the viscosity of the paste material is too low to print the inner layer electrode.

[0023]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.

As shown in FIG. 1, one embodiment of the present invention comprises an insulating substrate 1 having six laminated layers, an inner layer line electrode 3 disposed between layers of the insulating substrate 1, and an insulating layer It has a surface electrode 4 arranged on the surface of the material 1 and an inner via electrode 2 penetrating through the insulating base material 1 and electrically connecting the inner layer line electrode 3 and the surface electrode 4.

An embodiment of the multilayer ceramic substrate having such a configuration will be described below.

The molded body of the insulating base material 1 before firing is called a green sheet. On the surface of this green sheet, a through hole for the inner layer via electrode 2 is formed, and the paste material of the inner layer via electrode 2 is made to have a via diameter of 0. .15mm, via height 0.15m
m, and the paste material of the inner layer line electrode 3 is printed by a screen plate so as to have an electrode thickness of 0.015 mm. Six of them are laminated, and the heating temperature is 80 ° C. and the pressing pressure is 200 kgf. / cm ² at crimped 2 minutes laminated heat, 500 ° C., subjected to binder removal at 2 hours, 900 ° C. in air to obtain a multilayer ceramic substrate and fired at 10 minutes. The surface layer electrode 4 has the same configuration as the inner layer line electrode 3 since the inner layer line electrode 3 appears on the surface in the lamination of the insulating base material 1.

The green sheet for the insulating substrate 1 is made of BaO.Nd ₂ O ₃ .5Ti having a relative dielectric constant of 90 as a dielectric material.
17.2 wt% of O ₂ powder, 17.2 wt% of ALM-41 powder manufactured by Sumitomo Chemical as Al ₂ O ₃ , and T 1 having a glass transition point of 680 ° C. and a softening point of 790 ° C. as the first glass.
_{iO 2 -PbO-SiO 2 -B 2} O 3 -Nd 2 O 3 based 58.4Wt% powder Nippon Electric Ltd. MLS-40 of
And B ₂ O ₃ —SiO ₂ —Al ₂ O ₃ as the second glass
A PBO-based powder of MLS-1000 manufactured by Nippon Electric Glass Co., Ltd. was weighed at 7.2 wt%, mixed with an organic binder, kneaded, and formed into a thin plate by a molding machine.

The paste for the inner layer via electrode 2 is composed of 88 wt% of an average particle size of 4.5 to 5.5 μm Ag powder manufactured by Dowa Mining as a conductive material, and SiO 2 manufactured by Nippon Electric Glass as glass.
3 wt% of _2- PbO-based glass powder, 1 wt% of ethyl cellulose resin manufactured by Nissin Kasei as a polymer material, and 8 wt% of α-terpineol as a solvent were kneaded with a three-roll machine.

The paste for the inner layer line electrode 3 is made of Dowa Mining Co., Ltd., having an average particle size of 2.5 to 3.5 μm Ag as a conductive material.
86wt% powder and Si as glass
5 wt% of O ₂ -PbO-based glass powder, 1 wt% of Nissin Kasei's ethyl cellulose resin as a polymer material, and 8 wt% of α-terpineol as a solvent were kneaded with a three-roll machine.

Table 2 shows various characteristics of the present embodiment together with a conventional example of a non-high frequency circuit substrate. As shown in Table 2, in this example, the relative dielectric constant is in a desired range 21, the flexural strength is 250 MPa, which is a sufficient strength as a substrate, and the resistance value of the inner via electrode is about 1 times that of the conventional one. / 4 0.7mΩ
/ Via, the resistance of the inner layer line electrode is about 1
2.75 mΩ / □, low transmission loss of circuit signal.
Thus, a multilayer ceramic substrate optimal for a high-frequency circuit substrate was obtained.

[0031]

[Table 2]

FIG. 4 shows the relationship between the firing temperature of the obtained inner layer via electrode and insulating substrate and the volume shrinkage. As shown in FIG. 4, at a temperature lower than the firing temperature, the volume shrinkage of the inner via electrode is close to the volume shrinkage of the insulating base material. Was done.

FIG. 5 shows the relationship between the firing temperature of the obtained inner layer line electrode and the insulating substrate and the linear shrinkage. As shown in FIG. 5, at a temperature lower than the firing temperature, the linear shrinkage of the inner layer line electrode is close to the linear shrinkage of the insulating base material. Was done.

FIG. 2 shows the relationship between the dielectric content and the relative dielectric constant of the substrate when the dielectric content of the insulating base material is variously changed in this embodiment. As shown in FIG. 2, when the dielectric content is in the range of 15 to 30 wt%, the relative dielectric constant of the substrate can be 20 to 30.

In this embodiment, when the second glass content is 7.2 wt% and 0 wt%, the A
FIG. 3 shows the relationship between the Al ₂ O ₃ content and the bending strength of the substrate when the l ₂ O ₃ content was variously changed. As shown in FIG. 3, when the second glass content is 7.2 wt%, the bending strength of the substrate can be 230 MPa or more when the Al ₂ O ₃ content is in the range of 15 to 25 wt%. In addition, when the Al ₂ O ₃ content is in the range of 20 to 25 wt%, a large amount of holes remain in the insulating base material, which is not preferable as a circuit board.

The dielectric in the insulating substrate is not limited to the above, but may be any dielectric having a high relative permittivity and a small temperature dependence of the relative permittivity. Nd ₂ TiO ₈ , BaTiSi ₂
O ₆ , Nd ₄ Ti ₉ O ₂₄ , Nd ₄ Ti ₃ O _8.7 , BaO
It may contain any one or more of Nd ₂ O ₃ .5TiO ₂ .

The first glass in the insulating substrate is not limited to the one described in the above embodiment, but may be any one containing an element capable of forming a dielectric and generating a liquid phase upon firing at 1000 ° C. or lower to deposit a dielectric. as long, and SiO _2, and TiO _2,
At least one of Nd ₂ O ₅ and BaO, and Na
_It may include one or more of any of ₂ O, K ₂ O, CaO, BaO, ZnO, and PbO, and one or more of B ₂ O ₃ and MgO.

The second glass in the insulating substrate is not limited to the above, but may be any one that generates a liquid phase when fired at a temperature of 1000 ° C. or lower, forms a solid solution with the first glass, and reacts with the Al ₂ O _3. Sufficient, SiO ₂ , B ₂ O ₃ , Al ₂ O
₃ , Na ₂ O, K ₂ O, CaO, BaO, MgO, Z
It may contain at least one of nO and PbO.

Further, the conductor material in the inner layer via electrode is not limited to the above, but may be any material having substantially the same volume shrinkage as the insulating base material and a low resistance when fired at 1000 ° C. or lower.
It may include one or more of Ag powder, Ag-Pd alloy powder, and Ag-Pt alloy powder.

Further, the conductor material in the inner layer line electrode is not limited to the above, but may be any material having the same linear shrinkage rate and low resistance as the insulating base material when fired at 1000 ° C. or less.
It may include one or more of Ag powder, Ag-Pd alloy powder, and Ag-Pt alloy powder.

Further, the glass in the inner layer via electrode or the inner layer line electrode is not limited to the above, but may be any as long as it has a strong bonding force with the insulating base material, such as SiO ₂ , Na ₂ O, K
_It may contain any one or more of ₂ O, CaO, BaO, ZnO, and PbO.

[0042]

According to the first aspect of the present invention, the relative dielectric constant is optimized for a substrate for a high-frequency circuit, the bending strength of the substrate is maintained, and a low-resistance metal is applied to the inner layer via electrode or the inner layer line electrode. , A multilayer ceramic substrate on which a conductor based on the substrate can be provided.

According to the second aspect of the present invention, it is possible to obtain a multilayer ceramic substrate having a highly reliable inner via electrode which is strongly bonded to the insulating substrate, has low resistance, and does not crack or peel off during firing.

According to the third aspect of the present invention, it is possible to obtain a multi-layer ceramic substrate having a highly reliable inner layer line electrode which is strongly bonded to the insulating substrate, has low resistance, and does not crack or peel off during firing.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a part of an embodiment of the present invention.

FIG. 2 is a diagram showing a relationship between a dielectric content of an insulating base material and a relative dielectric constant of a substrate in one embodiment of the present invention.

FIG. 3 shows Al ₂ of an insulating base material according to an embodiment of the present invention.
FIG. 3 is a diagram showing the relationship between the O ₃ content and the bending strength of the substrate.

FIG. 4 is a diagram showing a relationship between a firing temperature of an inner via electrode and an insulating base material and a volume shrinkage in one embodiment of the present invention.

FIG. 5 is a diagram showing the relationship between the firing temperature of the inner layer line electrode and the insulating base material and the linear shrinkage in one embodiment of the present invention.

FIG. 6 is a diagram showing a relationship between a dielectric constant of a high-frequency circuit board and a wiring width;

[Brief description of reference numerals]

 DESCRIPTION OF SYMBOLS 1 Insulating base material 2 Inner layer via electrode 3 Inner layer line electrode 4 Surface layer electrode

Claims (7)

[Claims] A plurality of insulating substrates, an inner via electrode,
In a multilayer ceramic substrate composed of an inner layer line electrode and a surface electrode, the insulating base material contains a dielectric, Al ₂ O _3, and an element capable of forming a dielectric, and generates a liquid phase when fired at 1000 ° C. or less. A first glass for depositing a dielectric material, and a liquid phase generated by firing at 1000 ° C. or lower to form a solid solution with the first glass, and
A mixed material containing l ₂ O ₃ and a second glass that reacts
A multilayer ceramic substrate comprising a substrate fired at a temperature of 00 ° C. or lower. 2. Dielectric, Al ₂ O ₃ , first glass, second glass
The glass content is 15 to 30 wt%, 15 to 2 wt%, respectively.
The multilayer ceramic substrate according to claim 1, wherein the content is 0 wt%, 50 to 70 wt%, and 5 to 10 wt%. 3. The dielectric material is Nd ₂ TiO ₈ , BaTiS.
i ₂ O ₆ , Nd ₄ Ti ₉ O ₂₄ , Nd ₄ Ti ₃ O _8.7 , B
3. The multilayer ceramic substrate according to claim 1, comprising at least one of aO.Nd ₂ O ₃ .5TiO ₂ . 4. The first glass is made of SiO ₂ and TiO.
₂ , at least one of Nd ₂ O ₅ and BaO, and N
4. The multilayer ceramic substrate according to claim 1, comprising at least one of a ₂ O, K ₂ O, CaO, BaO, ZnO, and PbO and at least one of B ₂ O ₃ and MgO. . 5. The second glass comprises SiO ₂ and B ₂ O.
₃ , Al ₂ O ₃ , Na ₂ O, K ₂ O, CaO, Ba
The multilayer ceramic substrate according to claim 1, wherein the multilayer ceramic substrate contains at least one of O, MgO, ZnO, and PbO. 6. A plurality of insulating bases, an inner via electrode,
In a multilayer ceramic substrate composed of an inner layer line electrode and a surface electrode, the insulating base material contains a dielectric, Al ₂ O _3, and an element capable of forming a dielectric, and generates a liquid phase when fired at 1000 ° C. or less. A first glass for depositing a dielectric material, and a liquid phase generated by firing at 1000 ° C. or lower to form a solid solution with the first glass, and
A mixed material containing l ₂ O ₃ and a second glass that reacts
The paste material before firing of the inner layer via electrode is composed of Ag powder having an average particle size of 4.5 to 5.5 μm, Ag-Pd
Alloy powder, one or more of Ag-Pt alloy powder, SiO ₂ as glass, Na ₂ O, K ₂ O, Ca
O, BaO, ZnO, one containing at least one of PbO, an ethylcellulose-based resin as a polymer material, α-terpineol as a solvent, one or more of butyl carbitol, a conductive material, Glass,
The polymer material and the solvent content are 85 to 90 wt%, respectively, 2
A multilayer ceramic substrate characterized by being 4 wt%, 0.8 wt% to 1.5 wt%, and 8 wt% to 10 wt%. 7. A plurality of insulating bases, an inner via electrode,
In a multilayer ceramic substrate composed of an inner layer line electrode and a surface electrode, the insulating base material contains a dielectric, Al ₂ O _3, and an element capable of forming a dielectric, and generates a liquid phase when fired at 1000 ° C. or less. A first glass for depositing a dielectric material, and a liquid phase generated by firing at 1000 ° C. or lower to form a solid solution with the first glass, and
A mixed material containing l ₂ O ₃ and a second glass that reacts
The paste material before firing of the inner layer line electrode is made of Ag powder having an average particle size of 2.5 to 3.5 μm, Ag-P
d alloy powder, one or more of Ag-Pt alloy powder, SiO ₂ as glass, Na ₂ O, K ₂ O, Ca
O, BaO, ZnO, one containing at least one of PbO, an ethylcellulose-based resin as a polymer material, α-terpineol as a solvent, one or more of butyl carbitol, a conductive material, Glass,
The content of the polymer material and the solvent is 83 to 88 wt%, respectively,
A multi-layer ceramic substrate characterized by being at most 6 wt%, 0.8-1.5 wt%, 8-10 wt%.