JPH0231126U - - Google Patents
Info
- Publication number
- JPH0231126U JPH0231126U JP10901988U JP10901988U JPH0231126U JP H0231126 U JPH0231126 U JP H0231126U JP 10901988 U JP10901988 U JP 10901988U JP 10901988 U JP10901988 U JP 10901988U JP H0231126 U JPH0231126 U JP H0231126U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- gas injection
- lower ring
- upper gas
- shaped cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims 8
- 239000012495 reaction gas Substances 0.000 claims 3
- 238000010586 diagram Methods 0.000 description 10
- 238000007796 conventional method Methods 0.000 description 2
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10901988U JPH0231126U (en:Method) | 1988-08-18 | 1988-08-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10901988U JPH0231126U (en:Method) | 1988-08-18 | 1988-08-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0231126U true JPH0231126U (en:Method) | 1990-02-27 |
Family
ID=31344892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10901988U Pending JPH0231126U (en:Method) | 1988-08-18 | 1988-08-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0231126U (en:Method) |
-
1988
- 1988-08-18 JP JP10901988U patent/JPH0231126U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4614639A (en) | Compound flow plasma reactor | |
| JPH0423429A (ja) | 半導体装置のプラズマ処理装置及びプラズマ処理方法 | |
| JPH0231126U (en:Method) | ||
| JPH0666301B2 (ja) | プラズマエツチング方法 | |
| JPS57202733A (en) | Dry etching device | |
| JPH0330326A (ja) | 半導体製造装置 | |
| JPH02198138A (ja) | 平行平板型ドライエッチング装置の電極板 | |
| JPS61177374A (ja) | プラズマcvd装置及びプラズマcvdによる成膜方法 | |
| JPS57131372A (en) | Plasma etching device | |
| JPS62148570U (en:Method) | ||
| JPH02294029A (ja) | ドライエッチング装置 | |
| JPH01154630U (en:Method) | ||
| JPS6255564U (en:Method) | ||
| JPH0254229U (en:Method) | ||
| JPH03214723A (ja) | プラズマcvd装置 | |
| JPS63260033A (ja) | プラズマ反応処理装置 | |
| JPH0430728U (en:Method) | ||
| JPS6350127U (en:Method) | ||
| JPS6230337U (en:Method) | ||
| JPS6273542U (en:Method) | ||
| JPH01153364U (en:Method) | ||
| JPS6459916A (en) | Batch type reactive ion etching device | |
| JPH0719772B2 (ja) | 反応性イオンエツチング装置 | |
| JPS62129061U (en:Method) | ||
| JPS6359319U (en:Method) |