JPH02294021A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To remote particles that are adherent to a semiconductor substrate without requiring the labor of a worker after forming a film on the semiconductor substrate with a normal pressure CVD device by providing a means for forming the film on the semiconductor substrate as well as a cleaning means inside a normal pressure vapor growth device. CONSTITUTION:First of all, a water 2a is put on a heated transfer tray 2 that moves in the direction of dotted line with an arrow and is transferred up to the lower part of a reaction gas blowoff port 1. Then the reaction gas is sprayed to form a film on the wafer 2a. Subsequently, the wafer 2a is transferred to the process of a brush cleaning means by a Bernoulli's chuck 3. The Bernoulli's chuck 3 transfers the wafer 2a to the vacuum chuck 4a of a brush cleaning machine and the surface of the wafer 2a which is held by the vacuum chuck 4a is washed with a cleaning brush 4 while spraying pure water. After that, the wafer 2a is housed into a housing case 5 with a transfer belt 5a. Particles which are adherent to a semiconductor substrate are thus removed without requiring the labor of a worker immediately after forming the film on the semiconductor substrate inside a normal pressure CVD device.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and particularly to an atmospheric vapor phase growth equipment (hereinafter referred to as atmospheric pressure vapor deposition equipment) for forming a film on a semiconductor substrate at normal pressure.
(referred to as a VD device). [Prior Art] In conventional atmospheric pressure CVD equipment, unnecessary reaction generated particles (hereinafter referred to as particles) adhere to the semiconductor substrate when a film is grown on the semiconductor substrate. [Problems to be Solved by the Invention] In conventional atmospheric pressure CVD equipment, after a film is formed on a semiconductor substrate, an operator takes out the semiconductor substrate (wafer) from the CVD equipment and uses a cleaning tank or a cleaning tank to remove particles. The wafer had to be transported to a brush cleaning machine.This required time and effort for manufacturing, and the transport caused problems with contamination.The purpose of the present invention is to remove particles without any effort. Our goal is to provide semiconductor manufacturing equipment that can.

[Means to solve the problem]

The semiconductor manufacturing apparatus according to the present invention is characterized in that the atmospheric pressure CVD apparatus includes means for generating a CVD film at normal pressure, and cleaning means adjacent to this means on the semiconductor substrate unloading side. As the cleaning means, for example, a brush washer can be used.

According to the present invention, immediately after forming a film on a semiconductor substrate inside an atmospheric pressure CVD apparatus, atmospheric pressure CVD is performed without the intervention of an operator.
Particles attached to the semiconductor substrate can be removed by a cleaning machine provided inside the apparatus.

〔Example〕

Next, the present invention will be explained with reference to the drawings. 1st
The figure shows an atmospheric pressure CVD apparatus according to a first embodiment of the present invention. The wafer 2a is transported to the right in the drawing as shown by the solid arrow, and is placed on a heated transport tray 2 that moves as shown by the dotted arrow, and is transported to the lower part of the reactive gas outlet 1 where it is sprayed with reactive gas. A film is produced on the wafer.

The wafer 2a is then conveyed by the Bernoulli chuck 3 towards the brush cleaning means. The Bernoulli chuck 3 transports the wafer 2a to a vacuum chuck 4a of a brush cleaning machine, and cleans the surface of the wafer 2a held by the vacuum chuck with a cleaning brush 4 while spraying pure water.
Then, the wafer 2a is stored in the storage case 5.

FIG. 2 is a block diagram of a second embodiment of the present invention. In this embodiment, a film is formed on the surface of a wafer 2a as in the first embodiment, and then the wafer 2a is transferred to a vacuum chuck 4a using a Bernoulli chuck 3 and a conveyor belt 6, and a cleaning brush 4
Clean the wafer surface using Next, the wafer 2a is held with a mechanical chuck 7a so that the back surface thereof faces upward, and the back surface of the wafer 2a is cleaned with a cleaning brush 7 while spraying pure water. Thereafter, the wafer 2a is placed so that the surface thereof faces upward 7, and is stored in a storage case 5 using a conveyor belt 5a.

This embodiment has the advantage that particle adhering to the back surface of the semiconductor substrate can also be removed.

〔Effect of the invention〕

As explained above, the present invention has the effect of being able to reliably remove particles attached to a semiconductor substrate without operator intervention after forming a film on a semiconductor substrate using an atmospheric pressure CVD apparatus, thereby increasing the yield. This will dramatically improve the quality and make a major contribution to quality improvement.

[Brief explanation of drawings]

FIG. 1 is a block diagram of a first embodiment of the present invention. Second
The figure is a diagram of a second embodiment of the present invention. 1...Reaction gas outlet, 2...Transport tray, 2a.
... Semiconductor substrate, 3... Bernoulli chuck, 4,7.
...Cleaning brush, 4a...Vacuum chuck, 5...Storage case, 5a, 6...Transport belt, 7a...Mechanical chuck.

Claims (1)

[Claims] A means for spraying a reaction gas onto a semiconductor substrate heated at normal pressure to form a film on the semiconductor substrate, and removing unnecessary reaction products adhering to the semiconductor substrate after forming the film on the semiconductor substrate. What is claimed is: 1. A semiconductor manufacturing apparatus, comprising: a cleaning means for cleaning inside the atmospheric pressure vapor phase growth apparatus.