JPH07302827A - Semiconductor wafer carrying equipment - Google Patents

Abstract

PURPOSE:To definitely remove particles from a wafer chuck every time a semiconductor wafer is carried. CONSTITUTION:Upon completion of carrying a semiconductor wafer to a reaction furnace, a wafer chuck 5 is inserted into a cleaning chamber 7, a cleaning solution is jetted from cleaning solution supply means 8 located at the upper portion of a cleaning chamber 7 to a carrying chuck 5 for cleaning purpose. At this time, the cleaning solution is discharged from a waste liquid line 11. When the cleaning is completed and jetting of the cleaning solution is stopped, pressure reducing inside the cleaning chamber 7 is performed by a vacuum pump from an exhaust hole 10, boiling point of the cleaning solution is lowered, the cleaning solution is boiled at normal temperature, and evaporation and exhaustion are performed. When the cleaning solution is evaporated and exhausted, a predetermined inert gas is introduced from a purge line 9 and the cleaning chamber 7 is filled up with the inert gas.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer transfer apparatus, and more particularly to a semiconductor wafer transfer apparatus for transferring a semiconductor wafer used in a chemical vapor deposition apparatus (hereinafter referred to as a CVD apparatus) to a storage jig or a reaction furnace. The present invention relates to a technique effectively applied to a cleaning mechanism of an apparatus.

[0002]

2. Description of the Related Art According to a study by the present inventor, C
In the semiconductor wafer transfer device used in the VD device, the semiconductor wafer transfer device itself does not have a cleaning mechanism, and a worker uses a cleaning cloth impregnated with methyl alcohol or the like to clean the semiconductor wafer during maintenance of the reaction furnace of the CVD device. The transfer wafer chuck that sucks and moves the wafer is cleaned by cleaning it by sucking large particles with a vacuum cleaner or the like, and when the transfer chuck is significantly soiled, it is replaced with a new transfer chuck.

A CV using a semiconductor wafer transfer device
As an example where the D device is described, “Super LS” issued by the Industrial Research Board
I Manufacturing / Testing Equipment Guidebook ", 1992 edition, Heisei 3
Published on November 22, 2012, there are P31 to P33.

As a method for reducing particles from the transfer chuck, for example, Japanese Patent Laid-Open No. 58-177.
No. 949, the transfer chuck is made of a non-metallic material, and the semiconductor wafer is magnetically levitated in vacuum as shown in JP-A-58-160627. Those that perform clean transportation are known.

[0005]

However, in the semiconductor wafer transfer apparatus as described above, since the transfer chuck is cleaned only during maintenance of the reaction furnace of the CVD apparatus, the semiconductor wafer is transferred to the reaction furnace. Particles such as grown films peeled from the inside of the reaction furnace are deposited on the transfer chuck every time, and by adsorbing the semiconductor wafer to transfer it to the reaction furnace, particles adhere to the back surface of the semiconductor wafer. There is a possibility that the particles may drop and adhere to the semiconductor wafer provided below the semiconductor wafer to which the particles adhere.

Further, when the contact portion between the particles accumulated on the transfer chuck and the back surface of the semiconductor wafer to be transferred rubs against each other, the back surface of the semiconductor wafer is scraped to become particles, and the particles are provided on the lower side. It adheres to the upper surface of the semiconductor wafer, which is a big problem in improving the product yield.

Further, the cleaning of the transfer chuck is carried out by an operator, which requires a great number of man-hours such as disassembling the semiconductor wafer transfer device, assembling and cleaning work, or replacing with a new transfer chuck. However, these operations require a long time, which adversely affects the throughput of semiconductor device manufacturing.

It is an object of the present invention to provide a semiconductor wafer transfer device that reliably removes particles attached to a transfer chuck every time a semiconductor wafer is transferred.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0010]

Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

That is, the semiconductor wafer transfer apparatus of the present invention is provided with a cleaning chamber for cleaning the transfer chuck for sucking and transferring the semiconductor wafer, and a cleaning means provided in the cleaning chamber for cleaning the transfer chuck. It is a thing.

Further, the semiconductor wafer transfer apparatus of the present invention is
The cleaning means comprises a cleaning liquid supply means for spraying a cleaning liquid for cleaning the transfer chuck, and a discharge port for discharging the cleaning liquid sprayed from the cleaning liquid supply means is provided at a lower portion of the cleaning chamber.

Further, in the semiconductor wafer transfer apparatus of the present invention, an exhaust hole is provided above the cleaning chamber to decompress the cleaning chamber after the cleaning by the cleaning means, and an inert gas after the decompression of the cleaning chamber is completed. And an introduction hole for introducing
After the cleaning of the transfer chuck is completed, the cleaning chamber is decompressed to evaporate and exhaust the cleaning liquid, and the atmosphere in the cleaning chamber is replaced with an inert gas.

Further, the semiconductor wafer transfer apparatus of the present invention is
The cleaning means includes a voltage charging means for charging the carrying chuck with one of a positive voltage and a negative voltage, and a first adsorption means made of a conductive material for adsorbing particles charged with one of a positive voltage and a negative voltage. And a power supply means for charging the first chucking means with a voltage having a polarity different from the polarity charged on the carrier chuck. The particles attracted to the carrier chuck are electrostatically attracted by the first chucking means. It is to be adsorbed on the means.

Further, in the semiconductor wafer transfer apparatus of the present invention, the cleaning means has a second suction means made of a disc made of the same material as the transfer chuck, and the second suction means is rotated in the circumferential direction. It is composed of rotating means for rotating.

Further, the semiconductor wafer transfer apparatus of the present invention is
The transfer chuck is made of the same material as the film formed on the semiconductor wafer.

[0017]

According to the semiconductor wafer transfer apparatus of the present invention described above, the transfer chuck can be cleaned in the cleaning chamber every time the semiconductor wafer is transferred.

Further, according to the semiconductor wafer transfer apparatus of the present invention described above, the transfer chuck can be cleaned with the cleaning liquid by injecting the cleaning liquid from the cleaning liquid supply means onto the transfer chuck.

Further, according to the above-described semiconductor wafer transfer apparatus of the present invention, by depressurizing the cleaning chamber, the boiling point of the cleaning liquid after cleaning can be lowered to surely evaporate and dry and exhaust the cleaning liquid. The cleanliness of the cleaning chamber can be kept high by substituting the active gas.

According to the above-described semiconductor wafer transfer apparatus of the present invention, the transfer chuck is charged with a predetermined voltage by the voltage charging means, and the power supply means causes the first chucking means to have a different polarity from the transfer chuck. Particles adhering to the transport chuck can be removed by electrostatically attracting the voltage of 2 by the electrostatic chucking force generated between the transport chuck and the first suction means.

Further, according to the above-described semiconductor wafer transfer apparatus of the present invention, particles adhering to the transfer chuck are removed by pressing the transfer chuck and the second suction means made of the same material as the transfer chuck. Can be removed.

Further, according to the above-described semiconductor wafer transfer apparatus of the present invention, by making the material of the transfer chuck the same as the material for forming a film on the semiconductor wafer, it is possible to prevent particles from being generated due to back surface peeling during transfer of the semiconductor wafer. Occurrence can be reduced.

As a result, it is possible to reliably prevent fine particles generated from the transfer chuck, eliminate defects in the semiconductor device due to the fine particles generated from the transfer chuck, and improve the product yield.

[0024]

Embodiments of the present invention will now be described in detail with reference to the drawings.

(Embodiment 1) FIG. 1 is an overall schematic plan view of a semiconductor wafer transfer apparatus and a CVD apparatus having a cleaning mechanism according to Embodiment 1 of the present invention, and FIG. 2 is a cleaning according to Embodiment 1 of the present invention. FIG. 3 is a schematic cross-sectional view of a semiconductor wafer transfer device having a mechanism, and FIG. 3 is an external perspective view of a transfer chuck for sucking and transferring a semiconductor wafer according to a first embodiment of the present invention.

In the first embodiment, the CVD apparatus includes a reaction furnace 1 for forming a desired thin film on a semiconductor wafer (not shown) and a semiconductor wafer storage chamber 2 for storing the semiconductor wafer.
And the semiconductor wafer from the semiconductor wafer storage chamber 2 to the reaction furnace 1
It is composed of a semiconductor wafer transfer device 3 for transferring the semiconductor wafer to.

The semiconductor wafer transfer device 3 is located at the center of the transfer chamber 4 and is provided with a transfer chuck 5, which is a chuck mechanism for adsorbing the semiconductor wafer at its tip, and moves the semiconductor wafer to a predetermined position. The semiconductor wafer transfer device 6 is provided with a cleaning chamber (cleaning chamber) 7 for cleaning the transfer chuck 5.

Further, the transport chuck 5 itself has the same film quality as that of a film grown on a semiconductor wafer, for example, quartz for a silicon oxide film, silicon nitride and silicon carbide for a silicon nitride film, and polycrystalline silicon. The film is made of a material such as silicon and silicon carbide.

Further, as shown in FIG. 2, a cleaning liquid supply means 8 for injecting a cleaning liquid for cleaning the transfer chuck 5 is arranged in the cleaning chamber 7.

Further, on the upper surface of the cleaning chamber 7, for example, a purge line (introduction hole) 9 which is an introduction hole for introducing an inert gas such as nitrogen gas, argon gas or halogen gas, and a vacuum pump (not shown). An exhaust hole 10 is provided to reduce the pressure inside the cleaning chamber 7.

A waste liquid line (discharge port) 11 for discharging the cleaning liquid is provided on the lower surface of the cleaning chamber 7.

Further, below the semiconductor wafer transfer device 6, there is provided a moving means 12 for rotating the semiconductor wafer transfer device 6 and moving it in the front-back direction.
The semiconductor wafer transfer device 6 is rotated and moved in the front-back direction by 2 to transfer the semiconductor wafer to a predetermined position.

Next, the operation of this embodiment will be described.

When the transfer of the semiconductor wafer into the reaction furnace 1 is completed and the film formation on the semiconductor wafer is started, the semiconductor wafer transfer device 6 is rotated by the transfer means 12 and is transferred into the cleaning chamber 7. The transfer chuck 5, which is a suction portion for the semiconductor wafer, is inserted.

Then, an acid-based cleaning liquid such as hydrogen fluoride is sprayed from the cleaning liquid supply means 8 provided above the transfer chuck 5 onto the transfer chuck 5 to start cleaning. The cleaning liquid after cleaning at this time is discharged from the waste liquid line 11.

When the injection of the cleaning liquid is stopped and the cleaning is finished, the vacuum chamber pumps the exhaust holes 10 through the cleaning chamber 7.
Depressurize the inside. Then, the pressure inside the cleaning chamber 7 is reduced to lower the boiling point of the cleaning liquid, and the cleaning liquid is boiled at room temperature to evaporate and exhaust.

Next, when the cleaning liquid in the cleaning chamber 7 is evaporated and exhausted, a predetermined inert gas is introduced from the purge line 9 to fill the cleaning chamber 7 with the inert gas, and the cleaning chamber 7 is filled with the inert gas. Maintain cleanliness.

Therefore, according to the first embodiment, the cleaning liquid is sprayed on the transfer chuck 5 every time the semiconductor wafer is transferred to the reaction furnace 1, and the cleaning liquid is automatically generated. It is possible to prevent fine particles from being generated.

(Embodiment 2) FIG. 4 is a schematic sectional view of a semiconductor wafer transfer apparatus having a cleaning mechanism according to Embodiment 2 of the present invention.

In the second embodiment, the cleaning chamber 7
An ionic blow device (charging voltage means) 13 is provided on the inner side surface to blow air carrying ions by using arc discharge.

Further, a particle adsorbent (first adsorbing means) 14 made of, for example, an insulator is provided on the upper surface on which the transfer chuck 5 is located.

Further, a power supply means 15 for applying a positive voltage to the particle adsorbent 14 is connected to the particle adsorbent 14.

At the time of cleaning the transfer chuck 5,
The ionic blow device 13 blows ionized air to the transfer chuck 5 for a predetermined time to charge the transfer chuck 5 itself to a negative voltage.

After the charging of the transfer chuck 5 is completed, the power supply means 15 is operated to charge the particle adsorbent with a positive voltage and attach it to the transfer chuck 5 charged with a negative voltage by the ionic blow device 13. The particles adsorbed on the particle adsorbent 14 are adsorbed and removed by electrostatic force.

The transfer chuck 5 is the same as in the first embodiment.
Similarly to the above, it is made of the same material as the film quality grown on the semiconductor wafer.

As a result, in the second embodiment, the transfer chuck 5 is cleaned electrically every time the semiconductor wafer is transferred to the reaction furnace 1 by electrostatic attraction, so that the transfer chuck 5 is cleaned. It is possible to prevent fine particles generated from the above.

(Embodiment 3) FIG. 5 is an external perspective view of a semiconductor wafer transfer apparatus equipped with a cleaning mechanism according to Embodiment 3 of the present invention.

In the third embodiment, the cleaning chamber 7
A disk-shaped surface is smooth and a mirror-finished particle adsorbent (second adsorbing means) 14a is provided therein.

The particle adsorbent 14a is made of the same material as that of the transfer chuck 5. For example, if the transfer chuck 5 is made of quartz, the particle adsorbent 14a is also made of quartz.

A rotating means 16 for rotating the particle adsorbent is provided below the particle adsorbent 14a.

When cleaning the transfer chuck 5,
The semiconductor wafer transfer device 6 is moved downward by the moving means 12 to be inserted into the cleaning chamber 7, and thereafter,
The semiconductor wafer transfer device 6 is moved upward.

Then, the transfer chuck 5 is brought into contact with the particle adsorbent 14a and brought into pressure contact therewith, so that the particles adhering to the transfer chuck 5 adhere to the particle adsorbent 14a so as to be rubbed against them.

When the cleaning operation is completed, the semiconductor wafer transfer device 6 is moved downward by the moving means 12 to eliminate the contact between the transfer chuck 5 and the particle adsorbent 14a.

After that, the particle adsorbent 14a is rotated by the rotating means 16 to a predetermined position, and the next contact is performed with the new contact surface.

Similarly, the transfer chuck 5 is made of the same material as the film grown on the semiconductor wafer.

As a result, in the third embodiment, cleaning of the transfer chuck 5 is carried out physically and automatically by bringing the particle adsorbent 14a into contact with the transfer chuck every time the semiconductor wafer is transferred to the reaction furnace 1. By doing so, fine particles generated from the transfer chuck 5 are prevented.

Further, not only the cleaning operation of bringing the transfer chuck 5 into contact with the particle adsorbent 14a, but also the state that the transfer chuck 5 is kept in contact with the particle adsorbent 14a, the rotating means 16 causes the particle adsorbent 14 to move.
The effect is the same even if the cleaning is performed by rotating a.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the embodiments and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, the transfer chucks 5 of Examples 1 to 3 do not have the transfer chuck 5 itself made of the same material as the film quality that can be grown on the semiconductor wafer.
The same effect can be obtained by coating the entire surface of the transfer chuck 5 made of quartz or the like with a film made of the same material as the film grown on the semiconductor wafer.

[0060]

The effects obtained by the typical ones of the inventions disclosed in this application will be briefly described as follows.
It is as follows.

(1) According to the present invention, every time a semiconductor wafer is transferred to the reaction furnace, the transfer chuck is automatically cleaned with the cleaning liquid, so that fine particles generated from the transfer chuck can be prevented. .

(2) Further, in the present invention, the cleaning of the transfer chuck is electrically performed automatically by the electrostatic attraction force every time the semiconductor wafer is transferred to the reaction furnace, so that a minute amount generated from the transfer chuck is generated. Particles can be prevented. (3) Further, in the present invention, cleaning of the transfer chuck is physically performed every time the semiconductor wafer is transferred to the reaction furnace by bringing the particle adsorbent and the transfer chuck into contact with each other. By doing so, fine particles generated from the transfer chuck are prevented.

(4) Further, according to the present invention, the transfer chuck is cleaned during the wafer processing to avoid a decrease in throughput, and the transfer chuck is cleaned while keeping the wafer processing time short. You can

(5) Further, in the present invention, the above (1) to
By (4), defects of the semiconductor device due to fine particles generated from the transfer chuck are eliminated, and the product yield is improved.

[Brief description of drawings]

FIG. 1 is an overall schematic plan view of a semiconductor wafer transfer device and a CVD device having a cleaning mechanism according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of a semiconductor wafer transfer device including a cleaning mechanism according to the first embodiment of the present invention.

FIG. 3 is an external perspective view of a transfer chuck for sucking and transferring a semiconductor wafer according to the first embodiment of the present invention.

FIG. 4 is a schematic cross-sectional view of a semiconductor wafer transfer device provided with a cleaning mechanism according to a second embodiment of the present invention.

FIG. 5 is an external perspective view of a semiconductor wafer transfer device including a cleaning mechanism according to a third embodiment of the present invention.

[Explanation of symbols]

 1 Reactor 2 Semiconductor Wafer Storage Chamber 3 Semiconductor Wafer Transfer Device 4 Transfer Chamber 5 Transfer Chuck 6 Semiconductor Wafer Transfer Device 7 Cleaning Room (Washing Room) 8 Cleaning Liquid Supply Means 9 Purge Line (Introduction Hole) 10 Exhaust Hole 11 Waste Liquid Line (Discharge port) 12 Moving means 13 Ionic blow device (voltage charging means) 14 Particle adsorbent (first adsorbing means) 14a Particle adsorbent (second adsorbing means) 15 Power supply means 16 Rotating means

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tsutomu Inoue 5-20-1 Kamimizumoto-cho, Kodaira-shi, Tokyo Hitate Cho-LS Engineering Co., Ltd.

Claims (6)

[Claims] 1. A semiconductor device comprising: a cleaning chamber for cleaning a transfer chuck for sucking and transferring a semiconductor wafer; and a cleaning unit provided in the cleaning chamber for cleaning the transfer chuck. Wafer transfer device. 2. The cleaning means comprises a cleaning liquid supply means for spraying a cleaning liquid for cleaning the transport chuck, and a discharge port for discharging the cleaning liquid sprayed from the cleaning liquid supply means is provided at a lower portion of the cleaning chamber. The semiconductor wafer transfer apparatus according to claim 1, wherein the semiconductor wafer transfer apparatus is a semiconductor wafer transfer apparatus. 3. An exhaust hole for decompressing the inside of the cleaning chamber after the cleaning by the cleaning means is completed, and an introduction hole for introducing an inert gas after the decompression of the cleaning chamber is completed above the cleaning chamber. 3. The semiconductor wafer according to claim 1, wherein the cleaning liquid is evaporated and exhausted by decompressing the cleaning chamber after the cleaning of the transfer chuck is completed, and the atmosphere in the cleaning chamber is replaced with an inert gas. Transport device. 4. The voltage charging means, wherein the cleaning means charges the transport chuck with one of a positive voltage and a negative voltage.
A first adsorbing means made of a conductive material that adsorbs particles charged to one of a positive voltage and a negative voltage; and a voltage having a polarity different from the polarity charged on the transfer chuck by the first adsorbing means. 2. The semiconductor wafer transfer apparatus according to claim 1, further comprising a power supply unit for charging the electrostatic chuck to adsorb particles adhering to the transfer chuck to the first adsorption unit by electrostatic adsorption. 5. The cleaning means comprises a second suction means made of a disc-like material made of the same material as that of the transfer chuck, and a rotation means for rotating the second suction means in a circumferential direction, 2. The semiconductor wafer transfer apparatus according to claim 1, wherein the transfer chuck and the second suction means are brought into pressure contact with each other. 6. The semiconductor wafer transfer device according to claim 1, wherein the transfer chuck is made of the same material as a film formed on the semiconductor wafer.