JPH0521578A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

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Publication number
JPH0521578A
JPH0521578A JP17383491A JP17383491A JPH0521578A JP H0521578 A JPH0521578 A JP H0521578A JP 17383491 A JP17383491 A JP 17383491A JP 17383491 A JP17383491 A JP 17383491A JP H0521578 A JPH0521578 A JP H0521578A
Authority
JP
Japan
Prior art keywords
chamber
pretreatment
wafer
intermediate chamber
intermediate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP17383491A
Other languages
Japanese (ja)
Inventor
Hiroshi Fujioka
洋 藤岡
Original Assignee
Fujitsu Ltd
富士通株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, 富士通株式会社 filed Critical Fujitsu Ltd
Priority to JP17383491A priority Critical patent/JPH0521578A/en
Publication of JPH0521578A publication Critical patent/JPH0521578A/en
Application status is Withdrawn legal-status Critical

Links

Abstract

PURPOSE:To automatically perform pretreatment and semiconductor process without taking out a wafer. CONSTITUTION:A pretreatment chamber 1 using acid, an intermediate chamber 2 and a process chamber 3 are hermetically linked in order via gates 4. A coveying means 7 transferring wafers sequentially to each chamber is installed. At least the inner surfaces of the pretreatment chamber 1 and the intermediate chamber 2 are composed of nonmetallic material. At least the outer surfaces of the gates 4 and the conveying means 7 are composed of nonmetallic material. The pretreatment chamber 1 and the intermediate chamber 2 are linked with a supply source of inert gas for purging and equipped with the respective gas discharging means.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】本発明は半導体製造装置、さらに特定すれば化学気相成長、分子線エピタキシャル成長、スパッタリング、蒸着およびエッチングなどのウェハプロセスに使用する装置に関する。 [0001] The present invention is a semiconductor manufacturing apparatus, a chemical vapor deposition and more particularly, molecular beam epitaxy, sputtering, an apparatus for use in wafer processes such as deposition and etching.

【0002】 [0002]

【従来の技術】従来、ウェハプロセス装置はプロセス工程の直前に実施する酸による前処理装置と分離した装置であった。 Conventionally, the wafer process apparatus has a device separate from the pre-processing device according to the acid to be carried out just before the process step.

【0003】 [0003]

【発明が解決しようとする課題】本発明は、前処理装置とプロセス装置を連結して、ウェハをこれらの装置間で、自動的にかつ大気に接触することなく、移動させることを目的とする。 [SUMMARY OF THE INVENTION The present invention, by connecting the pre-treatment equipment and process equipment, a wafer between these devices, automatically and without contact with the atmosphere, and it is an object moving .

【0004】 [0004]

【課題を解決するための手段】上記課題は、酸による前処理室1と、中間室2と、プロセス室3がゲート4を介して密閉状態で順次連結し、かつこれらの室にウェハを順次移動させる搬送手段5を有し、前処理室1と、中間室2は、少なくとも内面が非金属からなり、ゲート4と搬送手段7は、少なくとも外面が非金属からなり、前処理室1と、中間室2が、それぞれパージ用不活性ガス供給源に連通し、かつそれぞれ排気手段を有することを特徴とする半導体製造装置によって解決することができる。 Above problems SUMMARY OF THE INVENTION comprises a pretreatment chamber 1 with an acid, an intermediate chamber 2, the process chamber 3 is sequentially connected in a sealed state via the gate 4, and a wafer sequentially to these chambers a conveying means 5 for moving the, the pretreatment chamber 1, intermediate chamber 2, at least the inner surface is made of non-metallic, the gate 4 and the transporting unit 7, at least the outer surface is made of non-metallic, the pretreatment chamber 1, intermediate chamber 2, respectively communicated with the purge inert gas supply source, and can be solved by a semiconductor manufacturing apparatus characterized by having a respective exhaust means.

【0005】 [0005]

【作用】本発明の装置は、前処理室とプロセス室との間に中間室を設け、前処理室で発生した酸蒸気を前処理室および中間室でパージするので、ゲートを開けてプロセス室に連通させても、プロセス室の金属部材が酸によって腐食されることがない。 [Action] device of the present invention, the pretreatment chamber and the intermediate chamber is provided between the process chamber, because purging acid vapor generated in the pretreatment chamber in the pretreatment chamber and the intermediate chamber, the process chamber by opening the gate be communicated to, never metal member in the process chamber is corroded by acids.

【0006】前処理室と中間室は、これらの間に挿入するゲート、ウェハ搬送手段も含めて、酸蒸気に接触する表面を非金属とする。 [0006] pretreatment chamber and the intermediate chamber, the gate to be inserted between them, including the wafer transport means, the surface in contact with the acid vapor and non-metallic. 各室にはウェハを下向きに保持するチャックを設けることが好ましく、前処理室には、酸容器を設置し、ヒータによって酸の蒸気を発生させることが好ましい。 Preferably provided a chuck for holding the wafer down to each chamber, the pre-treatment chamber, established the acid container, it is preferable to generate steam acid by the heater. なお、中間室には、酸の付着を防止するため、壁を加熱するヒータを設けることが好ましい。 Note that the intermediate chamber, to prevent adhesion of acid, it is preferable to provide a heater for heating the walls.

【0007】 [0007]

【実施例】図1は本発明の装置の機構を説明する配置図である。 DETAILED DESCRIPTION FIG. 1 is a layout view illustrating the mechanism of the apparatus of the present invention. 前処理室1と、中間室2と、プロセス室3がゲート4を介して順次連結されている。 The pretreatment chamber 1, an intermediate chamber 2, the process chamber 3 are sequentially connected via the gate 4. 前処理室1にはカセット室5、プロセス室3には他のカセット室6がそれぞれゲート4を介して連結されている。 Pretreatment chamber cassette chamber 5 to 1, the process chamber 3 other cassette chamber 6 is connected through the gate 4, respectively. 各室の間にウェハ8を移動させるために搬送手段7を設けてある。 It is provided with conveying means 7 to move the wafer 8 during chambers.

【0008】前処理室1と、中間室2と、プロセス室3 [0008] The pre-treatment chamber 1, an intermediate chamber 2, the process chamber 3
の内面とともに、ゲート4と搬送手段7の外面はテフロン被覆してある。 With the inner surface of the outer surface of the conveying means 7 and the gate 4 are teflon coated. 前処理室1と、中間室と、プロセス室3においては、天井に設けた静電チャック9でウェハ8 The pretreatment chamber 1, and the intermediate chamber, in the process chamber 3, the wafer 8 by an electrostatic chuck 9 provided on the ceiling
を保持する。 To hold. 前処理室1には、HF水溶液容器10を設け、ヒータ11によって発生させたHF蒸気と水蒸気をウェハ8の底面に接触させる。 The pretreatment chamber 1, the provided HF aqueous solution container 10, contacting the HF vapor and water vapor which is generated by the heater 11 to the bottom surface of the wafer 8. HF処理を終えた後、N 2 After completion of the HF treatment, N 2
でパージし、ゲート4をあけてウェハ8を中間室2に搬送する。 In purging, at a gate 4 for conveying the wafer 8 to the intermediate chamber 2.

【0009】中間室2は、H 2でパージして、ウェハ8 [0009] The intermediate chamber 2 is purged with H 2, wafer 8
に残留するHFを除去する。 Removing HF remaining in. なお、中間室2は壁をヒータ11で加熱して、壁面に付着するHFの除去を容易にする。 The intermediate chamber 2 is heated walls in heater 11 to facilitate removal of the HF adhering to the wall surface. プロセス室3には、スパッタリングを行うAl−1% The process chamber 3, Al-1% of performing sputtering
Si のターゲット12を設けたが、蒸着など他のプロセスを行う場合は、それぞれ他の部材とすることができる。 Is provided with the target 12 of Si, when performing other processes such as vapor deposition may be respectively the other member.

【0010】 [0010]

【発明の効果】本発明によれば、ウェハを前処理室から取出すことなく、自動的に半導体プロセスを行うことができるので、作業の能率を向上するとともに、環境を改良することができる。 According to the present invention, without taking out the wafer from the pre-treatment chamber, since it is possible to automatically perform the semiconductor process, thereby improving the efficiency of work, it is possible to improve the environment.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の半導体製造装置の配置図である。 1 is a layout diagram of a semiconductor manufacturing apparatus of the present invention.

【図2】本発明の装置の実施態様の要部断面図である。 Figure 2 is a fragmentary cross-sectional view of an embodiment of the apparatus of the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

1…前処理室 2…中間室 3…プロセス室 4…ゲート 5,6…カセット室 7…搬送手段 8…ウェハ 9…静電チャック 10…酸容器 11…ヒータ 12…ターゲット 1 ... pretreatment chamber 2 ... intermediate chamber 3 ... process chamber 4 ... gate 5,6 ... cassette chamber 7 ... conveying unit 8 ... wafer 9 ... electrostatic chuck 10 ... acid container 11 ... heater 12 ... Target

Claims (1)

  1. 【特許請求の範囲】 【請求項1】 酸による前処理室(1)と、酸の除去を行なう中間室(2)と、プロセス室(3)がゲート(4)を介して密閉状態で順次連結し、かつこれらの室にウェハ(8)を順次移動させる搬送手段(7)を有し、 前処理室(1)と、中間室(2)は、少なくとも内面が非金属からなり、ゲート(4)と搬送手段(7)は、少なくとも外面が非金属からなり、 前処理室(1)と、中間室(2)が、それぞれパージ用不活性ガス供給源に連通し、かつそれぞれ排気手段を有することを特徴とする半導体製造装置。 Claims 1. A pre-treatment chamber with an acid and (1), an intermediate chamber for the removal of acid and (2), the process chamber (3) sequentially in a sealed state through a gate (4) ligated, and having a conveying means for sequentially moving the wafer (8) to the chambers (7), pre-treatment chamber (1), an intermediate chamber (2) is at least the inner surface is made of non-metallic, the gate ( 4) and the transfer mechanism (7) is at least the outer surface is made of non-metallic, pre-treatment chamber (1), an intermediate chamber (2), respectively communicated with the purge inert gas supply source, and the respective exhaust means the semiconductor manufacturing apparatus characterized by having. 【請求項2】 前処理室(1)と、中間室(2)と、プロセス室(3)が、ウェハを支持するためのチャック(9)をそれぞれの天井に有する請求項1記載の装置。 2. A pre-treatment chamber (1), an intermediate chamber (2), the process chamber (3) The device of claim 1, further comprising a chuck (9) for supporting a wafer in each ceiling.
JP17383491A 1991-07-15 1991-07-15 Semiconductor manufacturing equipment Withdrawn JPH0521578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17383491A JPH0521578A (en) 1991-07-15 1991-07-15 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17383491A JPH0521578A (en) 1991-07-15 1991-07-15 Semiconductor manufacturing equipment

Publications (1)

Publication Number Publication Date
JPH0521578A true JPH0521578A (en) 1993-01-29

Family

ID=15968024

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17383491A Withdrawn JPH0521578A (en) 1991-07-15 1991-07-15 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPH0521578A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006521017A (en) * 2003-03-17 2006-09-14 東京エレクトロン株式会社 Processing system and method for chemical treatment of the substrate
JP2013524001A (en) * 2010-03-26 2013-06-17 サン−ゴバン グラス フランス Method and apparatus for replenishing the evaporator chamber

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006521017A (en) * 2003-03-17 2006-09-14 東京エレクトロン株式会社 Processing system and method for chemical treatment of the substrate
US7964058B2 (en) 2003-03-17 2011-06-21 Tokyo Electron Limited Processing system and method for chemically treating a substrate
JP2013524001A (en) * 2010-03-26 2013-06-17 サン−ゴバン グラス フランス Method and apparatus for replenishing the evaporator chamber

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19981008