JPH0521578A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPH0521578A JPH0521578A JP17383491A JP17383491A JPH0521578A JP H0521578 A JPH0521578 A JP H0521578A JP 17383491 A JP17383491 A JP 17383491A JP 17383491 A JP17383491 A JP 17383491A JP H0521578 A JPH0521578 A JP H0521578A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- pretreatment
- wafer
- intermediate chamber
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【0001】本発明は半導体製造装置、さらに特定すれ
ば化学気相成長、分子線エピタキシャル成長、スパッタ
リング、蒸着およびエッチングなどのウェハプロセスに
使用する装置に関する。The present invention relates to a semiconductor manufacturing apparatus, and more particularly to an apparatus used for a wafer process such as chemical vapor deposition, molecular beam epitaxial growth, sputtering, vapor deposition and etching.
【0002】[0002]
【従来の技術】従来、ウェハプロセス装置はプロセス工
程の直前に実施する酸による前処理装置と分離した装置
であった。2. Description of the Related Art Conventionally, a wafer processing apparatus has been separated from an acid pretreatment apparatus which is implemented immediately before a process step.
【0003】[0003]
【発明が解決しようとする課題】本発明は、前処理装置
とプロセス装置を連結して、ウェハをこれらの装置間
で、自動的にかつ大気に接触することなく、移動させる
ことを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to connect a pretreatment apparatus and a processing apparatus to move a wafer between these apparatuses automatically and without contact with the atmosphere. .
【0004】[0004]
【課題を解決するための手段】上記課題は、酸による前
処理室1と、中間室2と、プロセス室3がゲート4を介
して密閉状態で順次連結し、かつこれらの室にウェハを
順次移動させる搬送手段5を有し、前処理室1と、中間
室2は、少なくとも内面が非金属からなり、ゲート4と
搬送手段7は、少なくとも外面が非金属からなり、前処
理室1と、中間室2が、それぞれパージ用不活性ガス供
給源に連通し、かつそれぞれ排気手段を有することを特
徴とする半導体製造装置によって解決することができ
る。The above-mentioned problems are solved by the acid pretreatment chamber 1, the intermediate chamber 2 and the process chamber 3 which are sequentially connected in a hermetically sealed state through a gate 4 and wafers are sequentially placed in these chambers. The pretreatment chamber 1 and the intermediate chamber 2 have at least an inner surface made of a non-metal, and the gate 4 and the transportation means 7 have at least an outer surface made of a non-metal. This can be solved by a semiconductor manufacturing apparatus characterized in that each of the intermediate chambers 2 communicates with a purging inert gas supply source and has an exhausting unit.
【0005】[0005]
【作用】本発明の装置は、前処理室とプロセス室との間
に中間室を設け、前処理室で発生した酸蒸気を前処理室
および中間室でパージするので、ゲートを開けてプロセ
ス室に連通させても、プロセス室の金属部材が酸によっ
て腐食されることがない。In the apparatus of the present invention, the intermediate chamber is provided between the pretreatment chamber and the process chamber, and the acid vapor generated in the pretreatment chamber is purged in the pretreatment chamber and the intermediate chamber. The metal members in the process chamber will not be corroded by the acid even when they are communicated with.
【0006】前処理室と中間室は、これらの間に挿入す
るゲート、ウェハ搬送手段も含めて、酸蒸気に接触する
表面を非金属とする。各室にはウェハを下向きに保持す
るチャックを設けることが好ましく、前処理室には、酸
容器を設置し、ヒータによって酸の蒸気を発生させるこ
とが好ましい。なお、中間室には、酸の付着を防止する
ため、壁を加熱するヒータを設けることが好ましい。In the pretreatment chamber and the intermediate chamber, including the gate inserted between them and the wafer transfer means, the surfaces that come into contact with the acid vapor are made nonmetallic. It is preferable to provide a chuck for holding the wafer downward in each chamber, and it is preferable to install an acid container in the pretreatment chamber and generate a vapor of acid by a heater. In addition, it is preferable to provide a heater for heating the wall in the intermediate chamber in order to prevent adhesion of acid.
【0007】[0007]
【実施例】図1は本発明の装置の機構を説明する配置図
である。前処理室1と、中間室2と、プロセス室3がゲ
ート4を介して順次連結されている。前処理室1にはカ
セット室5、プロセス室3には他のカセット室6がそれ
ぞれゲート4を介して連結されている。各室の間にウェ
ハ8を移動させるために搬送手段7を設けてある。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a layout view for explaining the mechanism of the apparatus of the present invention. The pretreatment chamber 1, the intermediate chamber 2, and the process chamber 3 are sequentially connected via a gate 4. A cassette chamber 5 is connected to the pretreatment chamber 1, and another cassette chamber 6 is connected to the process chamber 3 via a gate 4, respectively. A transfer means 7 is provided to move the wafer 8 between the chambers.
【0008】前処理室1と、中間室2と、プロセス室3
の内面とともに、ゲート4と搬送手段7の外面はテフロ
ン被覆してある。前処理室1と、中間室と、プロセス室
3においては、天井に設けた静電チャック9でウェハ8
を保持する。前処理室1には、HF水溶液容器10を設
け、ヒータ11によって発生させたHF蒸気と水蒸気をウ
ェハ8の底面に接触させる。HF処理を終えた後、N2
でパージし、ゲート4をあけてウェハ8を中間室2に搬
送する。Pretreatment chamber 1, intermediate chamber 2 and process chamber 3
The outer surfaces of the gate 4 and the transfer means 7 as well as the inner surface of the are coated with Teflon. In the pretreatment chamber 1, the intermediate chamber, and the process chamber 3, the wafer 8 is held by the electrostatic chuck 9 provided on the ceiling.
Hold. An HF aqueous solution container 10 is provided in the pretreatment chamber 1, and HF vapor and water vapor generated by the heater 11 are brought into contact with the bottom surface of the wafer 8. After finishing the HF process, N 2
Then, the gate 4 is opened and the wafer 8 is transferred to the intermediate chamber 2.
【0009】中間室2は、H2 でパージして、ウェハ8
に残留するHFを除去する。なお、中間室2は壁をヒー
タ11で加熱して、壁面に付着するHFの除去を容易にす
る。プロセス室3には、スパッタリングを行うAl−1%
Si のターゲット12を設けたが、蒸着など他のプロセス
を行う場合は、それぞれ他の部材とすることができる。The intermediate chamber 2 was purged with H 2 and the wafer 8
HF remaining in the solution is removed. The wall of the intermediate chamber 2 is heated by the heater 11 to facilitate removal of HF adhering to the wall surface. In the process chamber 3, Al-1% for performing sputtering
Although the Si target 12 is provided, other members may be used when other processes such as vapor deposition are performed.
【0010】[0010]
【発明の効果】本発明によれば、ウェハを前処理室から
取出すことなく、自動的に半導体プロセスを行うことが
できるので、作業の能率を向上するとともに、環境を改
良することができる。According to the present invention, the semiconductor process can be automatically carried out without taking out the wafer from the pretreatment chamber, so that the work efficiency can be improved and the environment can be improved.
【図1】本発明の半導体製造装置の配置図である。FIG. 1 is a layout view of a semiconductor manufacturing apparatus of the present invention.
【図2】本発明の装置の実施態様の要部断面図である。FIG. 2 is a cross-sectional view of essential parts of an embodiment of the device of the present invention.
1…前処理室 2…中間室 3…プロセス室 4…ゲート 5,6…カセット室 7…搬送手段 8…ウェハ 9…静電チャック 10…酸容器 11…ヒータ 12…ターゲット 1 ... Pretreatment room 2 ... Intermediate room 3 ... Process room 4 ... Gate 5, 6 ... Cassette room 7 ... Transport means 8 ... Wafer 9 ... Electrostatic chuck 10 ... Acid container 11 ... Heater 12 ... Target
Claims (2)
行なう中間室(2)と、プロセス室(3)がゲート
(4)を介して密閉状態で順次連結し、かつこれらの室
にウェハ(8)を順次移動させる搬送手段(7)を有
し、 前処理室(1)と、中間室(2)は、少なくとも内面が
非金属からなり、ゲート(4)と搬送手段(7)は、少
なくとも外面が非金属からなり、 前処理室(1)と、中間室(2)が、それぞれパージ用
不活性ガス供給源に連通し、かつそれぞれ排気手段を有
することを特徴とする半導体製造装置。1. A pretreatment chamber (1) with an acid, an intermediate chamber (2) for removing the acid, and a process chamber (3) are sequentially connected in a sealed state via a gate (4), and these The chamber has a transfer means (7) for sequentially moving the wafer (8), and at least the inner surfaces of the pretreatment chamber (1) and the intermediate chamber (2) are made of a non-metal, and the gate (4) and the transfer means ( 7) is characterized in that at least the outer surface is made of non-metal, and the pretreatment chamber (1) and the intermediate chamber (2) respectively communicate with the inert gas supply source for purging and each have an exhaust means. Semiconductor manufacturing equipment.
ロセス室(3)が、ウェハを支持するためのチャック
(9)をそれぞれの天井に有する請求項1記載の装置。2. The apparatus according to claim 1, wherein the pretreatment chamber (1), the intermediate chamber (2) and the process chamber (3) each have a chuck (9) for supporting a wafer on their ceilings.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17383491A JPH0521578A (en) | 1991-07-15 | 1991-07-15 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17383491A JPH0521578A (en) | 1991-07-15 | 1991-07-15 | Semiconductor manufacturing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0521578A true JPH0521578A (en) | 1993-01-29 |
Family
ID=15968024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17383491A Withdrawn JPH0521578A (en) | 1991-07-15 | 1991-07-15 | Semiconductor manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0521578A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006521017A (en) * | 2003-03-17 | 2006-09-14 | 東京エレクトロン株式会社 | Processing system and method for chemically processing a substrate |
JP2013524001A (en) * | 2010-03-26 | 2013-06-17 | サン−ゴバン グラス フランス | Method and apparatus for refilling an evaporator chamber |
-
1991
- 1991-07-15 JP JP17383491A patent/JPH0521578A/en not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006521017A (en) * | 2003-03-17 | 2006-09-14 | 東京エレクトロン株式会社 | Processing system and method for chemically processing a substrate |
US7964058B2 (en) | 2003-03-17 | 2011-06-21 | Tokyo Electron Limited | Processing system and method for chemically treating a substrate |
JP2013524001A (en) * | 2010-03-26 | 2013-06-17 | サン−ゴバン グラス フランス | Method and apparatus for refilling an evaporator chamber |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19981008 |