JP3125121B2 - Cleaning method for single-wafer hot wall processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method for a single-wafer hot wall processing apparatus.

[0002]

2. Description of the Related Art In recent years, semiconductor integrated circuit elements have been increasingly integrated, and the degree of integration has been increased from 64 MDRAM to 25.
Entering the 6MDRAM generation. For this reason, multilayering and miniaturization of wiring structures have become more remarkable. As the wiring structure becomes multi-layered as described above, the number of steps in the wiring process increases, and the efficiency of the wiring process and dustproof measures have become more problematic than ever. In addition, as the wiring structure becomes finer, the conventional aluminum (Al) wiring has a problem of migration disconnection and the like, and a metal having excellent migration resistance, such as tungsten (W), has been examined as a wiring material as an alternative to Al. ing. In addition, various studies have been made on embedding of contact holes, via holes, and the like in terms of material, as the number of wiring structures increases. Further, as the diameter of the object to be processed is increased and the number of layers is increased, the coverage of each layer also becomes important.

For example, in the case of forming tungsten as a wiring film, a blanket W wiring by a CVD method having excellent coverage has been studied. This blanket W
However, there is a drawback that the wiring film is easily peeled off, and therefore there is a problem that particles are easily generated. Therefore, a method of providing an adhesion layer such as titanium nitride (TiN) as a base layer has been adopted as a preventive measure. Conventionally, this TiN is formed by a sputtering method. However, the sputtering method has a limitation in coverage at the bottom of a hole having a high aspect ratio.
For N, film formation by a CVD method having excellent coverage has been studied.

For filling the contact holes and via holes, a blanket W or a selective W for selectively filling tungsten by utilizing a chemical property such as a metal film on the surface has been studied. The embedding with the blanket W requires many steps such as formation of an adhesion layer made of TiN, blanket W, and etch-back, and is costly. Tend to apply. On the other hand, in the embedding by the selection W, since the hole portion can be selectively embedded, no adhesive layer is required, and multilayer wiring is simple and advantageous in cost. Therefore, select embedding W
In this case, a method in which wiring is formed by sputtering Al is being studied.

On the other hand, a process for forming an interlayer insulating film that insulates between upper and lower wiring layers as the wiring structure is multi-layered, and a process for embedding an insulating material in a gap between the wiring layers in the horizontal direction as the size is reduced. Is required for each wiring layer, and the whole wiring requires more and more steps. Further, a large step is formed in each wiring layer due to an increase in the aspect ratio. If an interlayer insulating film is formed as it is on an upper layer having a step, voids are easily formed, and these voids lower the electrical and mechanical reliability and eventually lower the yield. For this reason, a so-called reflow technique for flattening an interlayer insulating film to be laminated thereon is an extremely important technique from the viewpoint of reliability and yield. So, conventionally,
As the reflow technique, etchback by a combination of an oxide film and a resist by plasma CVD is generally used. However, in the case of a microstructure having a size of half a micron or less, the aspect ratio becomes large and it is difficult to avoid voids even in plasma CVD, and alternative film forming methods and materials are being studied in detail. Therefore, recently, CVD using an organic source having a reflow effect has been proposed.
Technology is attracting attention. In this CVD technique, for example, tetraethyl orthosilicate (TEO) is used as an organic source.
S) is used in combination with ozone. In this treatment, ozone is decomposed by thermal energy, and TEOS is decomposed by the active oxygen to form a silicon oxide film. At this time, a reflow effect is obtained.

For example, a single-wafer hot-wall CVD apparatus is used as an apparatus for performing this method stably and reliably. This hot wall CVD apparatus has a processing chamber for processing an object to be processed. A susceptor that horizontally supports the object to be processed is disposed on a bottom surface of the processing chamber,
The object to be processed supported by the support is heated to a temperature of about 500 ° C. by a heating means including a halogen lamp or a heating resistor disposed below the support. On the other hand, above this support, a predetermined ratio of TEOS
A gas supply unit for supplying a mixed gas of and ozone is provided,
The mixed gas supplied from the gas supply unit is caused to react on the surface of the heated object to grow and deposit a silicon oxide film on the surface of the object. Further, the processing chamber is surrounded by, for example, a heating coil, and by heating the inner surface of the processing chamber with the heating coil, an organic source such as TEOS is not condensed on the inner surface, and a stable gas state is maintained.

However, due to the repetition of such a film forming process, the same film as the object to be processed is formed on the susceptor, the gas supply unit and the inner surface of the processing chamber in the processing chamber. And fall off in the processing chamber, or float as particles in the processing chamber,
The object to be processed during processing is contaminated. Therefore, conventionally, every time a predetermined number of film forming processes or the like are completed, the processing chamber is cleaned to remove contaminants such as particles, thereby eliminating contamination of the object to be processed.
As a cleaning method, there is a method in which the apparatus itself is disassembled, and contaminants are washed or wiped off. However, this method is not advantageous because it requires a lot of time for cleaning to disassemble the processing chamber and significantly lowers the operation efficiency. Therefore, in the case of a plasma CVD apparatus or the like, without dismantling the apparatus, a cleaning gas such as NF3 gas is turned into plasma in a processing chamber to remove a film formed on a susceptor, an electrode, or the like, or an attached particle by etching. There are ways. This method is effective as a cleaning method because cleaning can be performed without disassembling the apparatus itself, so that the cleaning time can be shortened and the operation can be easily performed while operating.

[0008]

However, NF3
In the conventional method of cleaning the inside of the processing apparatus using plasma such as gas, plasma is generated between the susceptor and the electrode and extends only to the vicinity thereof. Therefore, the cleaning range by the plasma is limited to the susceptor and the electrode and the vicinity thereof. There is a problem in that it is impossible to clean the bottom of the processing chamber, which is limited by plasma, and cannot be cleaned. In this case, not only the film formed on the susceptor and the process gas supply unit by the plasma, but also the susceptor,
There has been a problem that the process gas supply section and the like are also etched, and these are severely consumed.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and does not disassemble the processing apparatus for the purpose of cleaning. An object of the present invention is to provide a cleaning method for a single-wafer hot wall processing apparatus which can be completely cleaned and can remove a contamination source such as a particle which becomes a problem in the manufacture of a semiconductor integrated circuit device.

[0010]

According to a first aspect of the present invention, there is provided a cleaning method for a single-wafer hot wall processing apparatus, wherein an object to be processed supported by a support in a processing chamber is disposed below the support. When the object to be processed is processed while being heated by the first heating means provided, it is used for forming a film of the object to be processed.
The support and the same temperature wall surface of the processing chamber with the second heating means surrounding the processing chamber when in liquefied easily or cold that teapot subjected organic source liquid to <br/> processing chamber at room temperature a braking Gyosu method of cleaning a <br/> Ru single wafer hot wall processing apparatus, after transporting the object to be processed which has been subjected to predetermined film forming process in the processing chamber to the outside, to the processing chamber A ClF ₃ gas is supplied, and the ClF ₃ gas is used to clean deposits adhered to the inside of the processing chamber during film formation.

Further, the cleaning method of the single-wafer hot wall processing apparatus according to the second aspect of the present invention is the first aspect.
In the invention described in (1), the ClF3 gas is exhausted from the processing chamber via an exhaust pipe for exhausting the gas after the processing of the object to be processed.

[0012]

According to the first aspect of the present invention, while the object to be processed supported on the support in the processing chamber is heated to the predetermined temperature by the first heating means, it is easy to liquefy at room temperature or when using an organic based sources of liquid as the film forming gas at normal temperature like the wall of processing chamber to prevent condensation on the wall of the organic source is controlled to the same temperature as the support by the second heating means <br /> in state, after a predetermined deposition on the workpiece by supplying an organic source to <br/> processing chamber as the film forming gas of the workpiece, the said workpiece When unloading from the processing chamber and cleaning the processing chamber, supplying a ClF ₃ gas from the cleaning gas supply system into the processing chamber causes the ClF ₃ gas to react with deposits adhered to the inside of the processing chamber during film formation.
The ClF ₃ gas is further activated by the reaction heat at this time, and the reaction between the activated ClF ₃ gas and the deposit is promoted, so that the deposit attached to the processing chamber can be removed.

According to the second aspect of the present invention, when the ClF3 gas is exhausted from the exhaust pipe in the first aspect, the ClF3 gas passes through the exhaust pipe. It reacts with the deposits on its inner surface and can remove the deposits.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the embodiments shown in FIGS. As shown in FIG. 1, the single-wafer hot wall processing apparatus of the present embodiment has a processing chamber 2 for processing an object to be processed, for example, a semiconductor wafer 1 one by one. As shown in FIG. 1, the processing chamber 2 is formed as a flat cylindrical container 3 made of a heat-resistant and dust-resistant material such as quartz. A heating coil 4 as a heating means is disposed on the outer surface of the container 3, and the inside of the container 3 is heated to a predetermined temperature by the heating coil 4.
A susceptor 5 as a support on which one semiconductor wafer 1 is placed is disposed substantially at the center of the bottom surface 2A in the processing chamber 2, and is disposed below and parallel to the susceptor 5 in parallel. An optically transparent quartz window 6 is provided on the bottom surface of the processing chamber 2. A heating lamp 7 composed of a halogen lamp or the like as a heating means is provided side by side below the quartz window 6, and the light energy of the heating lamp 7 irradiates the lower surface of the susceptor 5 through the quartz window 6. Thereby, the semiconductor wafer 1 can be heated to a predetermined temperature. On the other hand, a gas dispersion supply unit 8 is provided above the susceptor 5 so as to face the same.
Process gas or cleaning gas from the processing chamber 2
It is configured to be supplied into the inside. The gas dispersion supply section 8 is formed in a hollow disk shape, a gas supply pipe 8A is connected to the center of the upper surface, and a large number of gas supply holes 8B are formed in the lower surface.

The gas supply pipe 8 of the gas dispersion supply section 8
1, a process gas supply system 9 for supplying a process gas is connected via a pipe 10 as shown in FIG. 1, and a predetermined process gas is dispersed and supplied by opening a valve 11 attached to the pipe 10. It is configured to be supplied into the processing chamber 2 via the section 8. When, for example, an interlayer insulating film is formed in the processing chamber 2, a mixed gas of TEOS and ozone at a predetermined ratio is supplied from the process gas supply system 9. In addition to the interlayer insulating film,
Gate electrode, gate insulating film, etc. can be formed,
Examples of the process gas used for these include organic silicon compounds such as TEOS, organic phosphorus compounds, organic boron compounds, and organic arsenic compounds. When a metal wiring is formed, a process gas includes a halide, a carbonyl compound, and an organometallic compound. These process gases are supplied together with an oxidizing gas or a reducing gas, and a predetermined film is formed on the semiconductor wafer 1 by reacting with these gases. The process gas is preferably a compound having a relatively high vapor pressure, which can be supplied into the processing chamber 2 in a gaseous state from a gas supply source. When an organic source that is liquid at room temperature or easily liquefied at room temperature is used as a process gas, the inner wall surface of the processing chamber 2 is heated to a temperature similar to that of the susceptor 5 by the heating coil 4 to the wall surface of the organic source. To prevent film condensation and to perform film formation with a stable gaseous organic source. When using gaseous metal fluoride or the like as a process gas at room temperature, the process gas can be heated without heating the wall. Since the inorganic source can be kept in a stable gas state without condensing on the wall surface, the heating coil 4 is not operated and the inner wall surface of the processing chamber 2 is made lower than the temperature of the susceptor 5 to perform a film forming process. To do.

As shown in FIG. 1, a cleaning gas supply system 12 for supplying a cleaning gas is connected to the pipe 10 via a pipe 13.
The cleaning gas supply system 12 is configured to close the valve 14 and supply the cleaning gas into the processing chamber 2 from the cleaning gas supply system 12 via the pipes 13, the pipes 10, and the gas dispersion supply unit 8. That is, in the present embodiment, the gas dispersion supply unit 8 is configured to also serve as the gas supply unit for the cleaning gas. This cleaning gas supply system 12 includes:
ClF that stores ClF3 gas as a cleaning gas
3 gas cylinder 15 and a nitrogen gas cylinder 16 for storing a diluting gas for diluting the ClF3 gas, for example, a nitrogen gas.
These are connected to ends of pipes 13A and 13B branched from the pipe 13, respectively. Piping 1 to which ClF3 gas cylinder 15 is connected
A valve 17, a mass flow controller 18, and a valve 19 are sequentially arranged in the 3A from the upstream side to the downstream side, and a valve 20, a mass flow controller 21 from the upstream side to the downstream side in a pipe 13 B to which a nitrogen gas cylinder 16 is connected.
A valve 22 is sequentially provided, and the gases from the two 15 and 16 are combined at the pipe 13, and the cleaning gas can be supplied into the processing chamber 2 via the pipe 10 by opening the valve 14. I have.

On the other hand, a susceptor 5 is provided on the bottom surface 2A of the processing chamber 2.
Is formed in the vicinity of. A vacuum pump 25 is connected to the exhaust port 23 via an exhaust pipe 24. The vacuum pump 25 exhausts the inside of the processing chamber 2 to maintain a predetermined degree of vacuum. These exhaust port 23, exhaust pipe 24 and vacuum pump 2
Reference numeral 5 is configured to also serve as a gas exhaust unit for the cleaning gas. The vacuum pump 25 is preferably an oil-free dry pump so as not to be affected by the exhaust gas. Further, on the downstream side of the vacuum pump 25,
A harm removal device 26 is provided to capture harmful gases such as process gas or cleaning gas exhausted from the vacuum pump 25 and remove these harmful gases from the exhaust gas. As the abatement device 26, a device filled with a solvent that can dissolve ClF3 or the like well, for example, an alkaline solution is used. A gate valve 27 is provided on a side surface of the processing chamber 2, and is connected to a transfer chamber (not shown) through which the semiconductor wafer 1 is loaded and unloaded via the gate valve 27.

In order to carry out the cleaning method of the present invention in the single-wafer hot wall processing apparatus,
After closing the gate valve 27 of the single-wafer hot wall processing apparatus and shutting off the processing chamber 2 from the outside, the cleaning gas supply system 12 contains a dilution gas to the processing chamber 2 via the gas dispersion supply unit 8. Is supplied as a cleaning gas, and is evacuated to the outside by a vacuum pump 25 through an exhaust port 23 of the processing chamber 2, and during this time, the cleaning gas is used to clean deposits such as coatings adhered to the inside of the processing chamber 2. I do. Cleaning gas is ClF3
It is configured as a gas containing a gas or a diluting gas such as a nitrogen gas. This ClF3 is chemically active,
In particular, it reacts well with metallic and non-metallic coatings, and can effectively remove these deposits. When the cleaning gas is distributed in each chamber at a predetermined concentration, the exhaust may be stopped for a predetermined time, and the supply of the cleaning gas may be stopped after a predetermined time has elapsed after stopping the exhaust. May be. Further, the exhaust and the supply of the cleaning gas may be repeatedly performed in a pulsed manner. In this cleaning, the cleaning atmosphere may be heated.

When the cleaning gas is only ClF3 gas, the flow rate of ClF3 gas is 5 liter / min or less, the temperature is the boiling point of ClF3 to 700 ° C., and the internal pressure is 0.1 to 100 Torr. Cleaning is preferred. If the flow rate of the ClF3 gas exceeds 5 liters / minute, the components of the processing chamber 2 may be damaged. Cl
If the temperature of the F3 gas is lower than the boiling point, ClF3 may condense on the constituent members and damage the material, and even if the temperature exceeds 700 ° C., the ClF3 gas is activated and damages the constituent members.
There is a fear. If the pressure of the ClF3 gas is less than 0.1 Torr, the cleaning effect may not be expected.
If it exceeds rr, there is a possibility that the constituent members may be damaged. Also, ClF
The cleaning gas mainly composed of three gases is obtained by diluting ClF3 with an inert gas, for example, nitrogen gas. By diluting the ClF3 gas with the nitrogen gas or the like, the reactivity of the ClF3 gas can be suppressed, and the object to be cleaned can be gently cleaned and its damage can be reduced.

Next, an example of an interlayer insulating film forming process using the above single wafer hot wall processing apparatus will be described.
For example, the semiconductor wafer 1 is supported on a susceptor 5 in the processing chamber 2, irradiated by a heating lamp 7 through a light energy quartz window 6, and
Is heated to around 500 ° C. At the same time, the processing chamber 2 is heated by the heating coil 4 to heat the container 3 to the same temperature as the susceptor 5. After that, the valve 13 of the process gas supply system 9
To supply a mixed gas of TEOS and ozone adjusted to a predetermined ratio into the processing chamber 2 through the pipe 10 and the gas dispersion supply unit 8. Thereby, ozone is activated on the surface of the heated semiconductor wafer 1 to generate active oxygen,
The TEOS is decomposed by the active oxygen to form a silicon oxide film on the surface of the semiconductor wafer 1 and, at the time of film formation, a reaction product reflows to flatten the silicon oxide film. On the other hand, the processed process gas is exhausted to the outside through the exhaust port 23 and the exhaust pipe 24 by the action of the vacuum pump 25, and this exhaust gas is rendered harmless by the detoxifier 26 and exhausted to the outside. become.

A film is formed on the inner surface of the processing chamber 2, the susceptor 5, and other parts of the processing chamber 2 by such a film forming process. As described above, these particles are separated and float as particles in the room to contaminate the clean semiconductor wafer 1. These may gradually accumulate on the bottom surface of the processing chamber 2 and the like, so that they may fly when loading and unloading the semiconductor wafer 1 and contaminate the semiconductor wafer 1.
Therefore, after a predetermined number of film forming processes, the process is temporarily interrupted and dust such as these particles is removed by the cleaning method of the present invention. First, the power supply of the heating lamp 7 and the like in the processing chamber 2 is turned off, and then the semiconductor wafer 1 is not in the processing chamber 2. Next, after closing the gate valve 27 and shutting off the processing chamber 2 from the outside, ClF3 that may contain a diluting gas from the process gas supply system 9 into the processing chamber 2 via the pipe 10 and the gas dispersion supply unit 8. The processing chamber 2 is used as a cleaning gas as shown by the arrow in FIG.
The cleaning according to the present embodiment is performed by supplying the cleaning liquid to the inside. At the time of this cleaning, it is preferable to replace the processing chamber 2 with nitrogen gas or the like in advance.

Next, the vacuum pump 25 is driven at a room temperature higher than the boiling point of ClF3 to exhaust nitrogen gas from the processing chamber 2 to maintain the degree of vacuum in the processing chamber 2 at a predetermined value. Then, under this exhaust state, the valves 17 and 19 of the cleaning gas supply system 12 are opened at a predetermined opening degree, and the ClF3 gas in the processing chamber 2 is flown by the mass flow controller 18 at a predetermined flow rate, for example, 5 L / min or less. It is supplied via a pipe 13. As a result, a cleaning gas is introduced into the processing chamber 2 from the gas dispersion supply unit 8 connected to the pipe 13, and the pressure of the ClF3 gas in the processing chamber 2 is set to 0.1.
Maintain ~ 100 Torr. At this time, the cleaning gas consumed in the processing chamber 2 is constantly exhausted and updated from the exhaust port 23 of the processing chamber 2 through an exhaust system such as a vacuum pump 25, so that the cleaning gas is efficiently processed with fresh cleaning gas. Room 2
The inside can be cleaned.

Since the ClF 3 gas supplied into the processing chamber 2 is a chemically active gas, it reacts with a deposit such as a silicon-based film formed in the processing chamber 2 to remove the deposit. To clean the inside of the processing chamber 2 cleanly. Even if silicon-based particles accumulate in the processing chamber 2, the ClF3 gas spreads throughout the chamber, and the particles and the like adhering to the susceptor 5 in the chamber as well as the inner surface of the processing chamber 2 are also exposed to the ClF3 gas. It can be completely removed. In addition, since the reaction of the ClF3 gas with the film or the like is an exothermic reaction, the exothermic reaction causes
The reaction of the three gases is promoted more and more so that deposits such as coatings can be removed.

Further, in this embodiment, since the cleaning gas is discharged to the outside through the exhaust pipe 24, the exhaust pipe 24 on which a reaction product film is easily formed is also formed in the same manner as in the processing chamber 2. Can be removed by a cleaning gas. Further, since the toxic gas discharged from the exhaust system can be removed by the abatement device 26, clean exhaust can be performed.

As described above, according to the present embodiment, the semiconductor wafer 1 supported by the susceptor 5 in the processing chamber 2 is heated while being heated by the heating lamps 7 disposed below the susceptor 5. In the case where an organic source or an inorganic source is supplied into the processing chamber 2 for film formation of the semiconductor wafer 1 and a liquid at room temperature or an organic source which is easily liquefied at room temperature is used as a process gas when forming By heating the inner wall surface of the processing chamber 2 to the same temperature as the susceptor 5 by the heating coil 4, the organic source is prevented from condensing on the wall surface and the organic source is held as a stable gaseous process gas. In addition, when a metal fluoride or the like which is a gas at normal temperature is used as a process gas, the inorganic source does not condense on the wall surface without heating the wall surface without heating the wall surface. Because that can hold state, the heating coil 4
Is performed, the film is formed by lowering the inner wall surface of the processing chamber 2 below the temperature of the susceptor 5, and after the film forming processing, ClF is introduced into the processing chamber 2 as a cleaning gas without plasma.
By supplying 3 gases, each bottom and inner surface
And the susceptor 5 can completely clean the silicon-based deposits attached to all corners.
Even in the case of increasing the number of processes for forming an interlayer insulating film or the like in the manufacture of a semiconductor integrated circuit device having a multilayer wiring of DRAM or more, the inside of the processing chamber 2 can be completely cleaned, and the integration degree of 64 MDRAM or more can be achieved. It is possible to remove a contamination source such as a particle which becomes a problem in the production of a semiconductor integrated circuit device having the same. Moreover, according to the present embodiment, although the ClF3 gas is an active gas, it has no corrosiveness to the material and is plasma-less, so that the inside of the processing chamber 2 due to the plasma is extremely mild. Cleaning can be performed. Further, according to the present embodiment, it is only necessary to provide the cleaning gas supply system 12 as a cleaning system in the processing chamber 2 of the existing single-wafer hot wall processing apparatus, so that effective cleaning can be performed at extremely low cost. it can. In addition, as a matter of course, the cleaning time can be remarkably reduced as compared with a method in which the worker disassembles and cleans the apparatus.

As shown in FIG. 2, the single-wafer hot-wall processing apparatus of this embodiment is incorporated as a part of a multi-chamber processing apparatus to form a film continuously with other processing in the same vacuum system. Can be processed. This multi-chamber processing apparatus has three processing chambers 3 as shown in FIG.
It is configured as a so-called cluster tool provided with 1, 32, and 33. These processing chambers 31, 32, 33
As shown in FIG. 1, gate valves 35, 36, 37 are provided on three side surfaces of a first transfer chamber 34 formed in a substantially rectangular shape.
And these gate valves 35, 36,
By opening 37, it communicates with the first transfer chamber 34, and by closing these, it is configured to be able to shut off from the first transfer chamber 34. The first transfer chamber 34 includes a transfer device 39 for transferring an object to be processed, for example, a semiconductor wafer 38, to each of the processing chambers 31, 32, and 33.
It is configured to be able to maintain the same degree of vacuum as that of 2, 3. The transfer device 39 is provided substantially at the center of the first transfer chamber 34, has an arm 39A configured to be able to bend and extend, and transfers the semiconductor wafer 38 by placing the semiconductor wafer 38 on the arm 39A. Is configured. Further, as shown in FIG. 1, a gas supply port 34A is formed on the bottom surface of the first transfer chamber 34 as a gas supply section, and the gas supply port 34A is connected to the cleaning gas supply system 12 for supplying a cleaning gas. I have. Further, the cleaning gas supplied from the gas supply port 34A is configured to be exhausted from a gas exhaust port 34B formed as a gas exhaust section on the bottom surface of the first transfer chamber 34. Gate valves 40, 4 are provided on the other side of the first transfer chamber 4.
1, two vacuum preparatory chambers 42 and 43, which will be described later, are provided in parallel to be able to communicate with each other.
3 is the first by opening the gate valves 40 and 41
The gate valves 40 and 41 communicate with the transfer chamber 34.
Is closed so that the first transfer chamber 34 can be shut off. Therefore, in a predetermined vacuum atmosphere, the first
The transfer unit 39 transfers the semiconductor wafer 38 from, for example, the vacuum preparatory chamber 42 to a predetermined processing chamber. After performing a predetermined film forming process in the processing chamber, the semiconductor wafer 38 is transferred from the processing chamber via the first transfer apparatus 39. After being sequentially transferred to another processing chamber and predetermined processing is completed in each processing chamber, the processing chamber is again transferred to another vacuum preparatory chamber 43.

Each of these pre-vacuum chambers 42 and 43 has a gate valve 4 on the side facing the gate valve 40 and 41.
The gate valves 44 and 45 are opened to communicate with the second transfer chamber 46, and closed to close the second transfer chamber 46. It is configured to be able to shut off. Cassette chambers 50 and 51 for accommodating cassettes 49 are connected to the left and right side surfaces of the second transfer chamber 46 via gate valves 47 and 48 so as to be able to communicate with each other. The second transfer chamber 46 is communicated by opening 47 and 48, and shut off from the second transfer chamber 46 by closing them. In the second transfer chamber 46, a second transfer device 53 located at the center between the left and right cassette chambers 50 and 51 is disposed.
Semiconductor wafer 38 between cassette chambers 2 and 43 and cassette chambers 50 and 51
Is configured to be transferred. Further, a positioning device 54 for positioning the semiconductor wafer 38 by the orientation flat of the semiconductor wafer 38 is disposed between the second transfer device 53 and the pre-vacuum chambers 42 and 43. The semiconductor wafer 38 is transferred to the pre-vacuum chamber 42 by the second transfer device 53.

The second transfer chamber 46 is provided with a pressure adjusting device (not shown) for supplying an inert gas such as nitrogen gas into the chamber, adjusting the gas pressure to the atmospheric pressure and maintaining the same. In the nitrogen gas adjusted to the atmospheric pressure by the adjusting device, the semiconductor wafer 38 is transferred between the cassette 49 in the cassette chambers 50 and 51 and the vacuum preparatory chambers 42 and 43 using the second transfer device 53. It is configured. Also, this second
The transfer chamber 16 is configured to maintain a predetermined degree of vacuum during cleaning.

A gas supply port 55A is formed on the bottom surface of the second transfer chamber 46, and the gas supply port 55A is connected to a cleaning gas supply system 12 for supplying a cleaning gas through a pipe (not shown). Have been. The cleaning gas supplied from the gas supply port 55A is exhausted from a gas exhaust port 55B formed as a gas exhaust section on the bottom surface of the second transfer chamber 46. The gas exhaust port 55B is connected to, for example, an exhaust system of the vacuum preparatory chambers 42 and 43 via a valve (not shown), and is configured to perform vacuum exhaust during cleaning using the exhaust system. Close the valves and close the vacuum
3 is evacuated only. In addition, 5
6 and 57 are gate valves attached to the front of the cassette chambers 50 and 51, respectively.

When the single wafer hot wall processing apparatus is incorporated in a multi-chamber processing apparatus as described above, the gate valves of all chambers of the multi-chamber processing apparatus are closed to shut off the respective chambers. The cleaning gas is separately supplied from the cleaning gas supply system 12 to all the chambers other than the single-wafer hot-wall processing apparatus, and exhausted from each chamber to the outside. And the like can be individually cleaned.

In the above embodiment, the cleaning gas using ClF3 gas is described. However, in the present invention, the ClF3 gas is diluted with nitrogen gas or the like in accordance with the component of the deposit such as a film to be removed. The activity can be appropriately adjusted by appropriately diluting with a gas. Further, in the above-described embodiment, the gas supply unit and the gas exhaust unit for the cleaning gas in the processing chamber 2 are described using the gas dispersion system of the process gas and the gas exhaust system such as the gas exhaust port. The gas exhaust unit and the gas exhaust unit may be separately provided, and the location and number of the gas exhaust unit may be appropriately set as necessary. In the above embodiment, only the single-wafer hot-wall thermal CVD apparatus has been described. However, the single-wafer hot-wall plasma CVD apparatus may be configured by using the susceptor and the gas dispersion supply unit as a pair of electrodes. The cleaning method of the present invention can be applied to this single wafer hot wall plasma CVD apparatus.

[0032]

According to the first aspect of the present invention, the object to be processed supported by the support in the processing chamber is heated by the first heating means provided below the support. While processing the object to be processed , it is easy to liquefy at room temperature for forming a film of the object to be processed, or an organic saw that is liquid at room temperature.
Control the wall surface of the processing chamber at the same temperature and the support by the second heating means surrounding the processing chamber when that teapot subjected scan into the processing chamber
A method of cleaning a Gyosu that single wafer hot wall apparatus, after transporting the object to be processed which has been subjected to predetermined film forming process in the processing chamber to the outside, ClF above process chamber
₃ gas supply, the ClF ₃ due to so as to clean the material adhering to the time of deposition on the inside of the processing chamber by the gas, at the time of deposition of the gaseous state of stable using an organic source as the process gas The film formation process can be performed as it is, and after the film formation process, the processing chamber can be completely cleaned without disassembling the processing apparatus, without any damage, and without damage to the components without plasma. It is possible to provide a cleaning method of a single-wafer hot wall processing apparatus capable of removing a film at the time of film formation and a contamination source such as particles caused by the film, which are problems when manufacturing a circuit element.

According to the second aspect of the present invention, in the first aspect of the present invention, the ClF3 gas is exhausted from the exhaust pipe, so that the exhaust of the single-wafer hot wall processing apparatus is performed. It is possible to provide a cleaning method for a single-wafer hot-wall processing apparatus capable of cleaning deposits on a system pipe with ClF3 gas.

[Brief description of the drawings]

FIG. 1 is a configuration diagram illustrating an embodiment of a single-wafer hot wall processing apparatus according to the present invention.

FIG. 2 is a configuration diagram showing an example of an entire multi-chamber processing apparatus incorporating the single wafer hot wall processing apparatus shown in FIG. 1;

[Explanation of symbols]

 Reference Signs List 1 semiconductor wafer 2 processing chamber 4 heating coil (second heating means) 5 susceptor (support) 7 heating lamp (first heating means) 8 gas dispersion supply section (gas supply section) 23 exhaust port (gas exhaust section) 24 Exhaust pipe (gas exhaust part) 25 Vacuum pump (gas exhaust part)

 ────────────────────────────────────────────────── ─── Continuing from the front page Application for Patent Law Article 30 (1) has been filed. As of July 7, 1993, Semiconductor Industry Newspaper (published by Sangyo Times), “Semiconductor-related” column Patent Law Article 30 (1) Applicable application "Nikkei Micro Devices" July 1993 issue (published by Nikkei BP), page 91

Claims (2)

(57) [Claims] 1. An apparatus for processing an object to be processed while heating the object to be processed supported by a support in a processing chamber with first heating means disposed below the support. same wall surface of the processing chamber with the second heating means surrounding the processing chamber and the support at the time that in an easy or cold liquefied at room temperature teapot subjected organic source liquid into the processing chamber for the deposition of a method of cleaning a Gyosu that single wafer hot wall apparatus control the temperature, after transporting the object to be processed which has been subjected to predetermined film forming process in the processing chamber to the outside, ClF ₃ gas into the processing chamber A cleaning method for a single-wafer hot-wall processing apparatus, wherein the ClF ₃ gas is used to clean deposits adhered to the inside of the processing chamber during film formation. 2. The single-wafer hot-wall processing apparatus according to claim 1 , wherein ClF ₃ gas is exhausted from the processing chamber through an exhaust pipe for exhausting the gas after processing of the object to be processed. Cleaning method.