JPH0382020A - Chemical vapor growth device - Google Patents

Abstract

PURPOSE:To obtain a device, in which a reaction product deposited on the inwall, etc., of a reaction chamber need not be removed by periodically stopping the device and operating efficiency of which is not lowered, by heating and holding the inwall of the reaction chamber at a specific temperature and installing a ring not heated at a position surrounding a wafer between the inwall of the reaction chamber and a wafer stage. CONSTITUTION:In a chemical vapor growth device having a reaction chamber in which a semiconductor wafer 1, on which a film formed is shaped by a reaction gas A, is treated under the state of a sheet, a stage 3 holding and heating the semiconductor wafer 1 to the inwall of said reaction chamber, a gas head 2 being oppositely faced to the stage 3 at an interval and supplying the semiconductor wafer 1 with the reaction gas A, and exhaust ports 7 formed to the inwall 5 of the reaction chamber, the inwall 5 of the reaction chamber is heated and held at a temperature higher than the temperature of the reaction gas A and lower than the temperature of the stage 3, a ring 8 kept at a temperature lower than the temperature of the inwall 5 of the reaction chamber is mounted at a position surrounding the semiconductor wafer 1 between the inwall 5 of the reaction chamber and the stage 3, and a reaction product C formed by the vapor phase reaction of the reaction gas A on the inwall of said reaction chamber is deposited on the ring 8 through heating-migration.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a chemical vapor deposition apparatus used in a semiconductor manufacturing process.

[Conventional technology]

Conventionally, this type of chemical vapor deposition apparatus has been constructed as shown in FIGS. 7 and 8. To explain this with reference to the figures, Fig. 7 is a cross-sectional view of the processing chamber, and Fig. 8 is a plan view of the lower part of the processing chamber. A gas head for supplying the reaction gas A; 3 is a wafer stage that holds the semiconductor wafer 1 and is heated by a stage heater 4; 7 is an exhaust port provided on the wall 5 of the reaction chamber for taking out the exhaust gas B; This is a reaction product produced by a gas phase reaction of reaction gas B.

In the chemical vapor deposition apparatus configured as described above, reaction gas B is supplied from the gas heater 2 to the semiconductor wafer 1 which has been heated on the wafer stage 3 in advance, so that a reaction is caused on the semiconductor wafer 1. A generated film (not shown) can be formed.

[Problem to be solved by the invention]

By the way, in this type of chemical vapor deposition apparatus, in addition to the reaction product film formed on the semiconductor wafer 1, the reaction gas B produces reaction products C, which are fine particles, due to the vapor phase reaction.

However, in the conventional chemical vapor deposition apparatus, the reaction product C often adheres to the semiconductor wafer 1, causing a decrease in product yield.

In addition, the reaction product C adheres to the reaction chamber wall 5, the gas head 2, and the wafer stage 3, and the amount of adhesion increases (as the amount of the reaction product C increases, the biofilm conditions change, and the amount of adhesion on the semiconductor wafer 1 increases. Adhesion occurs.

For this reason, it is necessary to periodically stop the apparatus and remove the reaction product C adhering to the reaction chamber wall 5, etc.
This resulted in a decrease in equipment operating rate.

This invention was made to solve the above-mentioned problems, and there is no need to periodically stop the equipment to remove reaction products adhering to the walls of the reaction chamber, thereby reducing equipment operation time. An object of the present invention is to obtain a chemical vapor deposition apparatus that does not cause a decrease in yield.

[Means to solve the problem]

The chemical vapor deposition apparatus according to the present invention heats and maintains the inner wall of the reaction chamber at a temperature higher than the temperature of the reaction gas and lower than the temperature of the wafer stage, and heats the inner wall of the reaction chamber at a position surrounding the semiconductor wafer between the inner wall of the reaction chamber and the wafer stage. A ring is provided, and a reaction product generated by a gas phase reaction of a reaction gas in the reaction chamber is attached to the ring by thermophoresis.

[Effect]

In the present invention, a high temperature reaction chamber wall semiconductor wafer,
Due to the heat exchange with the low-temperature ring, fine particles of reaction products gather and adhere to the low-temperature ring through thermophoresis, reducing the amount of reaction products adhering to the interior walls of the reaction chamber and semiconductor wafers. By providing a deposit removal mechanism, reaction products can be easily removed.

〔Example〕

Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

Fig. 1 is a sectional view showing a reaction chamber of a chemical vapor deposition apparatus according to an embodiment of the present invention, and Fig. 2 is a plan view showing the reaction chamber. The same reference numerals are used to denote the same members, and detailed explanations are omitted. This ring is held by a ring support rod 9 made of a heat insulating material at a position surrounding the semiconductor wafer 1 between the exhaust lowers.

In the chemical vapor deposition apparatus configured as described above, the reaction chamber wall 5 is heated and maintained at a temperature higher than the temperature of the reaction gas A and lower than the temperature of the wafer stage 3 by the wall heater 6 . Due to the heat exchange between the semiconductor wafer 1 and the unheated ring 8, the reaction product C adheres to the ring 8 by thermophoresis, and the reaction product C adheres to the ring 8 inside the reaction chamber wall 5. The number of reaction products C adhering to the semiconductor wafer 1 can be reduced. Further, the reaction product C adhering to the ring 8 can be easily removed by replacing the ring 8.

In the above embodiment, the ring 8 is concentric with the semiconductor wafer l and has a circular cross-sectional shape, but the present invention is not limited to this, and may have other shapes.
The material, number, and method of support are also arbitrary.

Further, in this embodiment, the wafer stage 39 and the reaction chamber wall 5 are shown to be concentric with the semiconductor wafer 1, but the wafer stage 31 and the reaction chamber wall 5 do not have to be concentric with the semiconductor wafer 1. The shape and structure of 2 are also arbitrary.

Furthermore, it goes without saying that the shape, number, and arrangement of the exhaust lowers, the method of heating the wafer stage 39 and the reaction chamber wall 5, and the arrangement and configuration of each part within the reaction chamber in the present invention are not limited to the embodiments described above. .

Hereinafter, a second embodiment of the present invention will be explained in detail with reference to the drawings.

FIG. 1 is a sectional view showing a reaction chamber of a chemical vapor deposition apparatus according to a second embodiment of the present invention, and FIG. 3 is a plan view showing the reaction chamber.

The same members as in FIG. 8 are denoted by the same reference numerals 1, and detailed explanations will be omitted. In the figure, 6 is the reaction chamber wall 5.
10 is a water pipe that circulates cooling water inside, 11 is a pipe cover that covers the surface of the water pipe 10, and 12 is a cylinder that is attached to both ends of the pipe cover 11 and connected to it. A cover puller, 14, moves on the water conduit 10 and pulls the pipe cover 11 by the movement of 13;
is a brush block arranged so as to surround the tube cover 12.

Also, Fig. 4 shows the water conduit 10. A sectional view showing the tube cover 11,
Figures 5 and 6 show water pipe 10. 15 is a cross-sectional view showing the tube cover 11 and the brush block 14.
It is a brush attached to the inside of.

In the chemical vapor deposition apparatus configured as described above, the reaction chamber wall 5 is heated and maintained at a temperature higher than the temperature of the reaction gas A and lower than the temperature of the wafer stage 3 by the wall heater 6 . Due to the heat exchange between the semiconductor wafer 1 and the water conduit lO, which is kept at a low temperature by the cooling water tank, the reaction product C adheres to the pipe cover 11 covering the surface of the water conduit 10 by thermophoresis.
Reaction chamber inner wall 5. This can reduce the amount of reaction products C adhering to the semiconductor wafer 1 and the like.

Further, the tube cover 11 to which the reaction product C has adhered is removed by a cover trigger 12 attached to the air cylinder 13.
The water passes along the surface of the water conduit 11 and is drawn out of the reaction chamber.

At this time, as shown in FIG. 5, the brush block 14 is pressed toward the water conduit 10, and the reaction product C adhering to the pipe cover 11 is removed by the brush 15. The length of the pipe cover 11 is more than twice the length of the part of the water conduit 10 that is inside the reaction chamber. Initially, half of the tube cover 11 was inside the reaction chamber, and due to the movement of the air cylinder 13, the pipe cover 11 that was inside the reaction chamber was The reaction product C adhering to it is removed by the brush block 14 and is drawn out of the reaction chamber, and the part that was initially outside the reaction chamber enters the reaction chamber. When the tube cover 11 enters the reaction chamber, the brush block 14 opens as shown in FIG.
When the half of the tube cover 11 that was inside the reaction chamber is replaced with the half that was inside the reaction chamber, the air cylinder 13
moves in the opposite direction, serves to replace the two again, and the reaction products adhering to the tube cover 11 can be continuously removed.

In addition, in the above embodiment, cooling water was flowed into the water conduit lO, but the present invention is not limited to this.
Cooling gas may be used instead of cooling water.

Further, in the above embodiment, an example is shown in which the water pipe 10 is one, but the number of water pipes may be two or more, and their arrangement 1
Precepts are optional. Although an example is shown in which the air cylinder 13 is used as a mechanism for pulling out the tube cover 11, another mechanism such as a ball screw may be used instead. Another removal mechanism may be provided in place of the brush block 14 and brush 15.

Furthermore, the gas head 2 in the present invention. Wafer stage 3. The exhaust lower, the shape of the reaction chamber wall 5, etc., the arrangement and the heating method of the wafer stage 31 and the reaction chamber wall 5, etc.
Of course, the present invention is not limited to the embodiments described above.

〔Effect of the invention〕

As explained above, according to the present invention, the inner wall of the reaction chamber is heated and maintained at a temperature higher than the temperature of the reaction gas and lower than the temperature of the wafer stage, and the heating is performed at a position surrounding the semiconductor wafer between the inner wall of the reaction chamber and the wafer stage. Since a ring was provided that was not heated, due to the heat distribution between the high-temperature reaction chamber wall, the semiconductor sea urchin, and the low-temperature ring, particles of anti-grinding insects would collect and adhere to the low-temperature ring by thermophoresis. In addition, by replacing the ring or by providing a mechanism for removing deposits from the tube as a ring, the reaction products can be easily removed. be.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing a reaction chamber of a chemical vapor deposition apparatus according to an embodiment of the present invention, and FIGS. A plan view of the reaction chamber of the chemical vapor deposition apparatus according to the second embodiment, FIG. 4 is a sectional view showing the water conduit in FIG. 3,
5 and 6 are sectional views of the water conduit and brush block in FIG. 3, and FIGS. 7 and 8 are sectional views and plan views showing a reaction chamber of a conventional chemical vapor deposition apparatus. 1... Semiconductor wafer, 2... Gas head, 3...
Wafer stage, 4... Stage heater, 5... Reaction chamber wall, 6... Wall heater, 7... Exhaust port, 8...
...Ring, 9...Ring support rod, 10...Water pipe, 11...Pipe cover, 12...Cover trigger, 13
...Air cylinder, 14...Brush block, 15
...Brush, A...Reactive gas, B...Exhaust, C.
...Reaction product, D...Cooling water. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) A reaction chamber for processing semiconductor wafers in a single wafer manner in which a film is formed by a reaction gas; a stage for holding and heating the semiconductor wafer in the reaction chamber; In a chemical vapor deposition apparatus having a gas head for supplying a reaction gas to the reaction chamber, and an exhaust port provided on the wall of the reaction chamber, the wall of the reaction chamber is heated and maintained at a temperature higher than the temperature of the reaction gas and lower than the temperature of the stage; A ring that is maintained at a temperature below the temperature of the inner wall of the reaction chamber is provided at a position surrounding the semiconductor wafer between the inner wall of the reaction chamber and the stage. A chemical vapor deposition apparatus characterized in that the chemical vapor deposition is carried out by thermophoresis.