JP2015185681A - Method of manufacturing solid-state imaging device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique advantageous in reducing defectives during manufacture of solid-state imaging devices.SOLUTION: A method of manufacturing a solid-state imaging device includes: a preparation stage of preparing a member which has an opening formed in an insulation layer, arranged on a substrate having a photoelectric conversion part, over the photoelectric conversion part; a first cleaning stage of cleaning the inside of a chamber; a first processing stage of arranging the member in the chamber having been cleaned in the first cleaning stage and processing the member such that an insulator 603 is charged in a part of the opening; a second cleaning stage of taking the member out of the chamber and cleaning the inside of the chamber after the first processing stage; and a second processing stage of arranging the member after the first processing stage in the chamber having been cleaned in the second cleaning stage, and further processing the member such that an insulator 605 is charged in the opening of the member.

Description

  The present invention relates to a method for manufacturing a solid-state imaging device.

  In recent years, a solid-state imaging device having a waveguide has been proposed in order to increase the light incident on the photoelectric conversion unit. Patent Document 1 describes a method for manufacturing a solid-state imaging device that is advantageous for embedding an opening formed in an insulating film with a material having good adhesion to the lower film of the insulating film and having a high refractive index. ing.

JP 2012-182431 A

  When a silicon nitride film excellent in embedment of openings is continuously formed on the substrate, a corresponding deposit is also formed on the inner wall of the chamber, and a part of the deposit is detached from the inner wall of the chamber and is deposited on the substrate. The phenomenon of falling easily occurs. If the deposits detached from the inner wall of the chamber fall into the opening for forming the waveguide, a cavity can be formed in the opening. Since unintended reflection and refraction may occur in the waveguide in which the cavity is formed, a pixel having the waveguide can be a defective pixel.

  When the deposit detached from the inner wall of the chamber falls to a position other than the opening, the deposit fell when the unnecessary silicon nitride film was removed by etching or CMP (chemical mechanical polishing) after the waveguide was formed. Excess removal can occur at or around the location. As a result, the required film thickness may not be ensured, or the lower film may be exposed.

  As described above, the detachment of the deposit from the inner wall of the chamber can cause a defect during the manufacture of the solid-state imaging device. An object of the present invention is to provide an advantageous technique for reducing the occurrence of defects during the manufacture of a solid-state imaging device.

  One aspect of the present invention relates to a method for manufacturing a solid-state imaging device, which includes an opening formed in a portion above the photoelectric conversion unit in an insulating layer disposed on a substrate having a photoelectric conversion unit. A preparatory step for preparing the member, a first cleaning step for cleaning the inside of the chamber, the member disposed in the chamber cleaned in the first cleaning step, and an insulator in a part of the opening A first processing step for processing the member so as to be filled, a second cleaning step for removing the member from the chamber and cleaning the chamber after the first processing step, and the second The member that has undergone the first processing step is disposed in the chamber that has been cleaned in the cleaning step, and an insulator is disposed in the opening of the member. And a second processing step of further processing the member to be filled.

  According to the present invention, an advantageous technique is provided for reducing the occurrence of defects during manufacture of a solid-state imaging device.

The equivalent circuit diagram of the unit pixel block of a solid-state imaging device. The top view of the unit pixel block of a solid-state imaging device. 1 is a block diagram of an imaging system including a solid-state imaging device. Sectional schematic diagram for demonstrating the manufacturing method of a solid-state imaging device. Sectional schematic diagram for demonstrating the manufacturing method of a solid-state imaging device. Sectional schematic diagram for demonstrating the manufacturing method of a solid-state imaging device. Sectional schematic diagram for demonstrating the manufacturing method of a solid-state imaging device. Sectional schematic diagram for demonstrating the manufacturing method of a solid-state imaging device. Sectional schematic diagram for demonstrating the manufacturing method of a solid-state imaging device. A high-density plasma CVD apparatus is a schematic diagram. The figure explaining the 1st example of the manufacturing method of a solid-state imaging device. The figure explaining the 2nd example of the manufacturing method of a solid-state imaging device.

  First, a solid-state imaging device to which the manufacturing method of the present invention can be applied will be exemplarily described. FIG. 1 is an equivalent circuit diagram of a unit pixel block. FIG. 2 is a top view of the unit pixel block. FIG. 3 is a block diagram of an imaging system including a solid-state imaging device. The unit pixel block 100 includes a plurality of photoelectric conversion units (for example, photodiodes) 101 to 104, a plurality of transfer transistors 105 to 108, one reset transistor 110, and one amplification transistor 112. The unit pixel block 100 also has a floating diffusion node (hereinafter referred to as FD node) 109.

  The plurality of photoelectric conversion units 101 to 104 photoelectrically convert incident light into charges corresponding to the amount of light. The plurality of transfer transistors 105 to 108 transfer the charges generated in the corresponding photoelectric conversion unit among the plurality of photoelectric conversion units 101 to 104 to the FD node 109. Specifically, the transfer transistor 105 transfers the charge of the photoelectric conversion unit 101 to the FD node 109, and the transfer transistor 106 transfers the charge of the photoelectric conversion unit 102 to the FD node 109. The transfer transistor 107 transfers the charge of the photoelectric conversion unit 103 to the FD node 109, and the transfer transistor 108 transfers the charge of the photoelectric conversion unit 104 to the FD node 109. The FD node 109 is shared by the plurality of photoelectric conversion units 101 to 104. The amplification transistor 112 has a gate electrically connected to the FD node 109, a drain supplied with a predetermined voltage from the voltage supply line 111, and a source electrically connected to the output signal line 113. The amplification transistor 112 outputs a signal corresponding to the voltage of the FD node 109 to the output signal line 113. The reset transistor 110 resets the voltage of the FD node 109. By making the reset transistor 110 and the transfer transistors 105 to 108 conductive at the same time, the voltages of the photoelectric conversion units 101 to 104 can be reset. At least two voltages are supplied to the voltage supply line 111. For example, the pixel block 100 can be brought into a selected state by conducting the reset transistor 110 in a state where the first voltage is supplied to the voltage supply line 111. Then, the pixel block 100 can be brought into a non-selected state by making the reset transistor 110 conductive in a state where a second voltage different from the first voltage is supplied to the power supply line 111. The output signal line 113 has a terminal 114, and the terminal 114 is connected to a readout circuit described below.

  The configuration of the pixel block 100 will be described with reference to FIG. Charge storage regions (for example, N-type semiconductor regions) 201 to 204 are arranged on the semiconductor substrate. Here, the charge storage regions 201 to 204 constitute a part of the photoelectric conversion units 201 to 204, respectively. On the semiconductor substrate, gate electrodes 205 to 208 of transfer transistors 105 to 108 are arranged. On the semiconductor substrate, floating diffusion regions (hereinafter referred to as FD regions) 209 and 210 are arranged as elements constituting the FD node 109. Charges are transferred from the charge storage regions 201 and 202 to the FD region 209, and charges are transferred from the charge storage regions 203 and 204 to the FD region 210. The FD regions 209 and 210 and the gate electrode 212 of the amplification transistor are electrically connected by a connection wiring 213. The connection wiring 213 can be configured by extending polysilicon that forms the gate electrode of the amplification transistor.

  In the above configuration example, one unit pixel block 100 includes four photoelectric conversion units. This is an example of a configuration in which one unit pixel block 100 includes at least one photoelectric conversion unit.

  Next, the configuration of the solid-state imaging device 1601 will be described with reference to FIG. The solid-state imaging device 1601 includes a pixel portion 1611, a vertical scanning circuit 1612, two readout circuits 1613, two horizontal scanning circuits 1614, and two output amplifiers 1615. A portion other than the pixel portion 1611 can be referred to as a peripheral circuit portion 1616.

  In the pixel portion 1611, a plurality of unit pixel blocks 100 illustrated in FIG. 1 are two-dimensionally arranged. That is, the pixel portion 1611 has pixels arranged in a two-dimensional manner. The readout circuit 1613 includes, for example, a column amplifier, a CDS circuit, an addition circuit, and the like, and processes a signal read out from the pixels in the row selected by the vertical scanning circuit 1612 via the output signal line 113 (for example, amplification, Add). The column amplifier, the CDS circuit, the addition circuit, and the like are arranged for each one or a plurality of pixel columns, for example. The horizontal scanning circuit 1614 generates a signal for selecting and reading the signal of the reading circuit 1613. The output amplifier 1615 amplifies and outputs the signal of the column selected by the horizontal scanning circuit 1614.

  The above configuration is only one configuration example of the solid-state imaging device, and the solid-state imaging device to which the present invention is applicable is not limited to this. For example, in the configuration example illustrated in FIG. 3, the readout circuit 1613, the horizontal scanning circuit 1614, and the output amplifier 1615 are arranged one by one above and below across the pixel portion 1611 in order to configure two output paths. . However, three or more output paths may be provided.

  Hereinafter, a method for manufacturing the solid-state imaging device will be described with reference to FIGS. 4 to 9 are schematic cross-sectional views of a part of the solid-state imaging device shown in FIG. Specifically, FIGS. 4 to 9 show two photoelectric conversion units and transistors 303 in the pixel portion 1611 and transistors 304 in the peripheral circuit portion 1616.

  First, in a preparation process, the member shown in FIG. 4 is prepared. The member includes a semiconductor substrate 301 and a second wiring layer 322 including a gate electrode, an insulating layer 319, a contact plug 320, a first wiring layer 321 and a via plug, which are disposed on the semiconductor substrate 301.

  In the semiconductor substrate 301, charge storage regions 202 and 203, a transistor 303 in the pixel portion 1611, and a transistor 304 in the peripheral circuit portion 1616 are arranged. The charge storage regions (N-type semiconductor regions) 202 and 203 constitute part of the photoelectric conversion units 102 and 103, and signal charges (electrons here) are collected. The transistor 304 in the peripheral circuit portion 1616 constitutes a CMOS circuit. In the pixel portion 1611, an insulating film (not shown) made of silicon oxide, an insulating film 305 made of silicon nitride, and an insulating film 306 made of silicon oxide are stacked in this order from the main surface 302 side of the semiconductor substrate 301. Arranged. These films can be formed by plasma chemical vapor deposition (hereinafter referred to as CVD).

  Further, an insulating film 317 is disposed on the pixel portion 1611, and an insulating film 318 is disposed on the peripheral circuit portion 1616. The insulating films 317 and 318 are made of, for example, silicon nitride. Here, the insulating film 317 is provided so as to extend on the charge storage regions 202 and 203, that is, on a part of the gate electrode of the transfer transistor from above the photoelectric conversion portion.

  The insulating layer 319 is formed by alternately stacking insulating films made of silicon oxide and insulating films made of silicon nitride. Each of the plurality of insulating films made of silicon oxide is formed to a thickness of 120 nm to 1000 nm by a plasma CVD method. The plurality of insulating films made of silicon nitride are each formed to a thickness of 10 nm to 200 nm by plasma CVD. Therefore, most of the insulating layer 319 is silicon oxide. The plurality of insulating films made of silicon nitride function as an etching stop film when forming a wiring layer or a via plug and as a metal diffusion prevention film constituting the wiring layer. The insulating layer 319 becomes a clad of a waveguide described later. In the insulating layer 319, a plurality of wiring layers (first wiring layer 321 and second wiring layer 322) are arranged.

  In one example, the contact plug 320 is mainly made of tungsten, and the first wiring layer 321 and the second wiring layer 322 formed integrally with the via plug mainly contain copper as a main component. In one example, the first wiring layer 321 is formed by a single damascene method, and the second wiring layer 322 is formed by a dual damascene method. Each of the conductive patterns constituting the contact plug, the via plug and the wiring layer has a barrier metal. The first wiring layer 321 and the second wiring layer 322 may be formed by patterning using aluminum instead of the damascene method.

  Of the plurality of insulating films made of silicon nitride, the insulating film disposed in contact with the upper surfaces of the first wiring layer 321 and the second wiring layer 322 functions as a metal, that is, a copper diffusion preventing film. On the other hand, the insulating film disposed below the first wiring layer 321 and the second wiring layer 322 functions as an etching stop film when the first wiring layer 321 and the second wiring layer 322 are formed by the damascene method. The insulating film functioning as an etching stop film is thinner than the insulating film functioning as a diffusion preventing film. In the damascene method, there is a step of forming a groove for wiring or a groove for wiring and a via plug in the insulating film, and it is preferable that an etching stop film is provided for controlling the shape of the groove in the etching for forming the groove. Therefore, an insulating film functioning as an etching stop film is disposed below the first wiring layer 321 and the second wiring layer 322. Since the etching stop film is removed when the groove is formed, the lower surface of the etching stop film coincides with the lower surfaces of the first wiring layer 321 and the second wiring layer 322 or the lower surfaces of the first wiring layer 321 and the second wiring layer 322. Arranged above.

  Next, in the process illustrated in FIG. 5, an opening 323 is formed in each portion of the insulating layer 319 above the photoelectric conversion portions 202 and 203. This can be done by forming a photoresist pattern having an opening in a region where the opening 323 is to be formed over the insulating layer 319 and etching the insulating layer 319 using the photoresist pattern as an etching mask. This etching can be performed by, for example, anisotropic etching. More specifically, plasma etching is performed on the insulating layer 319 until the insulating film 317 is exposed. Here, the insulating film 317 is a film for reducing plasma damage to the photoelectric conversion portion during etching, and also functions as an etching stop film. The insulating film (not shown) made of silicon oxide disposed on the main surface 302 of the semiconductor substrate 301, the insulating film 305, and the insulating film 306 function as an antireflection film for light to be incident on the photoelectric conversion unit. To do.

  Next, in the steps shown in FIGS. 6 to 8, a transparent material having a refractive index higher than that of the insulating layer 319 functioning as a clad is filled in the opening 323 to form a portion that becomes the core of the waveguide.

  First, in the step shown in FIG. 6, an insulating film 601 made of an insulator (for example, silicon nitride) as a transparent material having a higher refractive index than the insulating layer 319 is formed so as to cover the side surface and the bottom surface of the opening 323. The insulating film 601 can be formed by, for example, a parallel plate plasma CVD apparatus. In one example, the silicon nitride film as the insulating film 601 can be formed by a parallel plate plasma CVD apparatus using a silicon-containing gas, nitrogen, and a nitrogen-containing gas. The silicon nitride film preferably has a thickness of 10 nm or more, for example.

  Next, in the step shown in FIG. 7 (first treatment step), a transparent material having a higher refractive index than the plurality of interlayer insulating films 319 is formed on the insulating film 601 so that a part of the opening 323 is filled with an insulator. An insulating film 603 made of an insulator (for example, silicon nitride) is formed. The insulating film 603 can be formed by, for example, high density plasma CVD.

  Next, in the step shown in FIG. 8 (second processing step), insulation as a transparent material having a higher refractive index than the plurality of interlayer insulating films 319 is formed on the insulating film 603 so that the opening 323 is further filled with an insulator. An insulating film 605 made of a body (eg, silicon nitride) is formed. The insulating film 605 can be formed by, for example, high density plasma CVD. The film forming conditions in the first processing step and the film forming conditions in the second processing step may be the same.

  Here, when the first processing step shown in FIG. 7 and the second processing step shown in FIG. 8 are continuously performed using the same film forming apparatus, deposits formed in the chamber of the film forming apparatus. May be detached and fall into the opening 323 or the like. In this case, the opening 323 cannot be completely embedded, and a cavity may be formed. Therefore, in this embodiment, a cleaning process is performed in which the member illustrated in FIG. 7 that has undergone the first treatment process is taken out of the chamber of the film forming apparatus and the inside of the film forming apparatus is cleaned. Thereafter, the second processing step is performed on the member so that the opening 323 of the member that has undergone the first processing step is further filled with an insulator. In the first example, the first processing step and the second processing step are performed by the same film forming apparatus. In the first example, the first processing step and the second processing step are performed by different film forming apparatuses. However, both the first step and the second step are performed by the film forming apparatus cleaned by the cleaning step.

  The first example will be described with reference to FIG. The manufacturing method of the solid-state imaging device in the first example includes a preparation process, a first cleaning process, a first processing process, a second cleaning process, and a second processing process. In the preparation step, a member (see FIG. 5) in which an opening 323 is formed in a portion above the photoelectric conversion portions 202 and 203 in the insulating layer 319 disposed on the semiconductor substrate 301 having the photoelectric conversion portions 202 and 203. prepare. In the first cleaning step, the inside of the chamber of the film forming apparatus is cleaned. In the first treatment step, the member is disposed in the chamber cleaned in the first cleaning step, and the member is treated so that a part of the opening 323 is filled with an insulator (insulating film 603). Form). The second cleaning step is performed after the first treatment step, and in the second cleaning step, the member is taken out of the chamber and the inside of the chamber is cleaned. In the second processing step, the member that has undergone the first processing step is disposed in the chamber that has been cleaned in the second cleaning step, and the opening 323 of the member is filled with an insulator. The member is further processed (insulating film 605 is formed).

  The second example will be described with reference to FIG. The method for manufacturing a solid-state imaging device in the second example includes a first preparation step, a first cleaning step, a first processing step, a second cleaning step, and a second processing step. In the first preparation step, a first member in which an opening 323 is formed in a portion above the photoelectric conversion units 202 and 203 in the insulating layer 319 disposed on the semiconductor substrate 301 having the photoelectric conversion units 202 and 203 (FIG. 5) is prepared. In the first cleaning step, the inside of the chamber (hereinafter referred to as the first chamber) of the first film forming apparatus is cleaned. In the first processing step, the first member is disposed in the first chamber cleaned in the first cleaning step, and the first member is filled with an insulator in a part of the opening 323. (Insulating film 603 is formed). In the second cleaning step, the inside of the chamber (hereinafter referred to as the second chamber) of the second film forming apparatus is cleaned. In the second processing step, the first member that has undergone the first processing step is disposed in the second chamber that has been cleaned in the second cleaning step, and an insulator is disposed in the opening 323 of the first member. The first member is further processed so as to be filled (insulating film 605 is formed).

  The method for manufacturing a solid-state imaging device in the second example may further include a second preparation step, a third cleaning step, a third processing step, a fourth cleaning step, and a fourth processing step. In the second preparation step, a second member having openings 323 formed in portions above the photoelectric conversion units 202 and 203 in the insulating layer 319 disposed on the semiconductor substrate 301 having the photoelectric conversion units 202 and 203 (FIG. 5) is prepared. In the third cleaning step, after the first treatment step, the inside of the first chamber from which the first member has been taken out is cleaned. In the third processing step, the second member is disposed in the first chamber cleaned by the third cleaning, and an insulator is filled in a part of the opening 323 of the second member. The second member is processed (insulating film 603 is formed). The fourth cleaning step is performed after the second treatment step. In the fourth cleaning step, the first member is taken out of the second chamber and the inside of the second chamber is cleaned. In the fourth treatment step, the second member that has undergone the third treatment step is disposed in the second chamber that has been cleaned in the fourth cleaning step, and an insulator is disposed in the opening 323 of the third member. The second member is further processed so as to be filled (insulating film 605 is formed).

  Thereafter, the same processing is repeated for the third member transition member. The processing steps identified by odd numbers such as the first processing step, the third processing step, and the fifth processing step are different in processing target members, but the processing contents are the same. Moreover, although the process target identified by the even number, such as a 2nd process process, a 4th process process, and a 6th process process differs, the content of a process is the same.

  FIG. 10 schematically shows a high-density plasma CVD apparatus suitable for forming the insulating films 603 and 605. High density plasma CVD is a CVD apparatus that deposits a film by converting a gas into a high density plasma using a high frequency such as a high frequency electric field or a high frequency magnetic field. FIG. 10 shows a high-density plasma CVD apparatus 1500 using a high-frequency electric field as an example. The high-density plasma CVD apparatus 1500 includes a chamber 1506 and a stage 1503 having a temperature adjustment function. The high-density plasma CVD apparatus 1500 also has a high-frequency power source 1501 connected to a coil wound around a chamber 1506 functioning as an upper electrode, and a high-frequency power source 1502 connected to a stage (lower electrode) 1503. A processing target member 1504 is disposed on the stage 1503. The high-frequency power source 1501 for the upper electrode and the high-frequency power source 1502 for the lower electrode can be set to individual high-frequency powers. During film formation, a gas is introduced from the supply port 1505 to generate plasma. In the high-density plasma CVD method, film formation is performed while adjusting the sputtering effect and the film formation effect. By adjusting the high frequency power, gas, wafer temperature, etc. of the high frequency power supply for the upper electrode and the lower electrode, the ratio of the sputtering effect and the film formation effect is adjusted. In addition, a cleaning step of cleaning a film deposited on the inner wall of the chamber 1506 by introducing a cleaning gas such as NF 3, oxygen, nitrogen, argon, helium from the supply port 1505 and introducing a high frequency from the high frequency power source 1501. Can be implemented. Further, instead of or in addition to this cleaning process, a method may be employed in which a cleaning gas is converted into plasma and introduced into the chamber 1506 in a plasma generator (not shown) installed outside the chamber 1506. .

  If the cleaning process is performed excessively, surface roughness of the inner wall of the chamber 1506 is induced. Therefore, it is preferable that the cleaning process is performed to such an extent that deposits on the inner wall of the chamber 1506 disappear. As a method for detecting the end of the cleaning process, the light emission in the chamber 1506 at the time of cleaning is monitored, and a change in the light emission due to the disappearance of the deposit is detected. A method for detecting a change is preferred. After the deposit in the chamber 1506 is removed by a cleaning process, a silicon-containing gas, a nitrogen-containing gas, and an Ar gas are introduced into the chamber 1506, and a dense silicon nitride film is formed so as to cover the surface of the inner wall of the chamber 1506. Deposit. Thereby, the adhesion of the film deposited on the surface of the inner wall of the chamber 1506 is improved. In this step, the film deposited on the inner wall of the chamber 1506 may be an oxygen-containing film by including an oxygen-containing gas in the introduced gas. Thereafter, the member 1504 that has undergone the first processing step is put into the chamber 1506, and the second processing step is performed.

  As described above, in this embodiment, the member 1504 that has undergone the first processing step is taken out from the chamber 1506 of the film forming apparatus that has performed the first processing step between the first processing step and the second processing step. A cleaning process for cleaning the chamber 1506 is performed. Thus, even when a thick insulator is formed, such as filling the waveguide with an insulator, detachment of the deposited film from the inner wall of the chamber is suppressed. Therefore, the filling failure of the waveguide due to the fall of the deposit to the opening forming the waveguide and the excessive removal of the portion in the subsequent etching and CMP due to the fall of the deposit on the portion other than the waveguide are suppressed.

  After the formation of the insulating films 601, 603, and 605 in the opening 323 is completed, that is, after the opening 323 is filled with an insulator, an unnecessary silicon nitride film formed on the upper surface of the insulating layer 3191 is subjected to CMP, plasma etching, or the like. May be removed. By this step, the surface of the silicon nitride is planarized. By leaving a part of the silicon nitride on the upper surface of the insulating layer 319, the insulating film 325 having a thickness of about 100 nm to 500 nm extending over the upper surface of the high refractive index member 324 and the insulating layer 319 can be formed. An insulating film 326 made of silicon oxynitride can be formed on the upper surface of the insulating film 325. The insulating film 326 is formed with a film thickness of about 50 nm to 150 nm by, for example, plasma CVD. The waveguide is constituted by an insulating layer 319 and a high refractive index member 324 filled therein.

  Next, in the step illustrated in FIG. 9, unnecessary portions of the insulating film 325 and the entire insulating film 326 are removed. In this embodiment, all the insulating films 325 and 326 arranged in the peripheral circuit portion 1616 are removed. The partial removal of the insulating film 325 and the insulating film 326 can be performed by anisotropic etching, for example, plasma etching.

  Next, an insulating film 330 is formed so as to cover the insulating film 326 and the interlayer insulating film 319. The insulating film 330 is made of, for example, silicon oxide and can be formed by a plasma CVD method. Then, a via plug 331 penetrating the insulating film 330 and the interlayer insulating film 319 disposed on the second wiring layer 322 is formed. The via plug 331 is made of tungsten, for example, and has a barrier metal of titanium or titanium nitride.

  Next, the third wiring layer 333 is formed on the via plug 331. The third wiring layer 333 is made of, for example, a conductor whose main component is aluminum, and is formed by patterning. Here, the third wiring layer 333 can also function as a light shielding film in the peripheral circuit region.

  Next, an insulating film to be the insulating film 334 and an insulating film to be the insulating film 335 are formed in this order. Here, the insulating film to be the insulating film 334 is silicon oxynitride formed by a plasma CVD method, and the insulating film to be the insulating film 335 is silicon nitride formed by a plasma CVD method. Then, a lens-shaped photoresist is formed on the insulating film to be the insulating film 335, and etching is performed using the photoresist as a mask, so that a lens is formed on the insulating film to be the insulating film 335. Thereafter, an insulating film to be the insulating film 336 is formed on the lens. Here, the insulating film 335 is a lens layer having the inner lens 337, and the insulating film 334 and the insulating film 336 can function as antireflection of the insulating film 335.

  Next, a planarizing layer 338 made of resin, a color filter layer 339 including color filters corresponding to a plurality of colors, and a microlens layer 340 including microlenses 341 are formed in this order, and the configuration shown in FIG. 9 is obtained. It is done.

  After removing the member having undergone the first treatment step from the chamber of the film forming apparatus, a foreign matter removal step for removing foreign matter adhering to the member is performed, and a second treatment step is carried out after the foreign matter removal step. Also good. The foreign matter removing step includes (a) a brush scrubber method, (b) a method of spraying droplets generated by mixing a gas and a liquid, (c) an ultrasonic cleaning method, (d) a method of blowing a gas, And (e) a method of cleaning with a cleaning liquid. Here, the method (b) is, for example, a method in which droplets generated by mixing nitrogen gas and pure water using a two-fluid nozzle collide with a member at high speed. In the method (b), for example, the foreign matter is efficiently removed by the impact given to the member by the collision of the droplet onto the member and the liquid flowing radially along the surface of the member after the collision. Can be done. The method (d) is, for example, a method of blowing nitrogen gas. The method (e) is, for example, a method using ammonia perwater as a cleaning liquid.

  By performing the foreign matter removing step, even if the foreign matter falls on the member in the first processing step, the foreign matter can be removed, so the insulating film formed by the first processing step and the second processing step are formed. Structural continuity with the insulating film can be improved. Thereby, the optical loss in a waveguide can be reduced.

  A cleaning process may be performed after the second treatment process, and then the opening 323 may be further filled with an insulator. Moreover, you may further implement a cleaning process as needed. In other words, the process for filling the opening 323 with the insulator can be divided into a plurality of processes, and the cleaning process can be performed between the processes.

Claims (17)

A preparation step of preparing a member in which an opening is formed in a portion above the photoelectric conversion unit in an insulating layer disposed on a substrate having a photoelectric conversion unit;
A first cleaning step for cleaning the inside of the chamber;
A first processing step of disposing the member in the chamber cleaned in the first cleaning step, and processing the member so that a portion of the opening is filled with an insulator;
A second cleaning step of removing the member from the chamber and cleaning the chamber after the first treatment step;
The member that has undergone the first treatment step is disposed in the chamber that has been cleaned in the second cleaning step, and the member is further processed so that the opening of the member is filled with an insulator. Two processing steps;
A method for manufacturing a solid-state imaging device, comprising: A foreign matter removing step of removing foreign matter adhering to the member taken out from the chamber, wherein the second treatment step is performed after the foreign matter removing step;
The method for manufacturing a solid-state imaging device according to claim 1. The foreign matter removing step includes (a) a brush scrubber method, (b) a method of spraying droplets generated by mixing a gas and a liquid, (c) an ultrasonic cleaning method, (d) a method of spraying a gas, And (e) at least one method of cleaning with a cleaning solution.
The method for manufacturing a solid-state imaging device according to claim 2. The chamber is a chamber of a plasma CVD apparatus having an electrode for generating plasma. In the first cleaning step and the second cleaning step, a high frequency is applied to the electrode while supplying a cleaning gas into the chamber. Made by supplying,
The method for manufacturing a solid-state imaging device according to any one of claims 1 to 3.   5. The first cleaning step and the second cleaning step are performed by converting a cleaning gas into plasma in a plasma generation apparatus provided outside the chamber and introducing the plasma into the chamber. The manufacturing method of the solid-state imaging device of any one of these. The insulator material that fills the opening in the first treatment step is the same as the insulator material that fills the opening in the second treatment step.
The method for manufacturing a solid-state imaging device according to claim 1, wherein: The film forming conditions in the first processing step and the film forming conditions in the second processing step are the same.
The method for manufacturing a solid-state imaging device according to any one of claims 1 to 6. A plurality of wiring layers are arranged in the insulating layer,
The method for manufacturing a solid-state imaging device according to claim 1, wherein: Preparing a first member having an opening formed in a portion above the photoelectric conversion unit in an insulating layer disposed on a substrate having a photoelectric conversion unit;
A first cleaning step of cleaning the inside of the first chamber;
A first processing step of disposing the first member in the first chamber cleaned in the first cleaning step and processing the first member so that a part of the opening is filled with an insulator. When,
A second cleaning step of cleaning the inside of the second chamber;
The first member that has undergone the first processing step is disposed in the second chamber that has been cleaned in the second cleaning step, and the opening of the first member is filled with an insulator. A second processing step for further processing the first member;
A method for manufacturing a solid-state imaging device, comprising: A preparation step of preparing a second member having an opening formed in a portion above the photoelectric conversion portion in an insulating layer disposed on a substrate having a photoelectric conversion portion;
A third cleaning step for cleaning the inside of the first chamber from which the first member has been taken out after the first treatment step;
The second member is disposed in the first chamber cleaned by the third cleaning, and the second member is processed so that a part of the opening of the second member is filled with an insulator. A third processing step;
A fourth cleaning step for removing the first member from the second chamber and cleaning the second chamber after the second treatment step;
The second member that has undergone the third treatment step is disposed in the second chamber that has been cleaned in the fourth cleaning step, and the opening of the second member is filled with an insulator. A fourth processing step of further processing the second member;
The method of manufacturing a solid-state imaging device according to claim 8, further comprising: A foreign matter removing step of removing foreign matter adhering to the first member taken out from the first chamber, wherein the second treatment step is performed after the foreign matter removing step;
The method of manufacturing a solid-state imaging device according to claim 9 or 10. The foreign matter removing step includes (a) a brush scrubber method, (b) a method of spraying droplets generated by mixing a gas and a liquid, (c) an ultrasonic cleaning method, (d) a method of spraying a gas, And (e) at least one method of cleaning with a cleaning solution.
The method for manufacturing a solid-state imaging device according to claim 11. The first chamber and the second chamber are chambers of a plasma CVD apparatus having an electrode for generating plasma, and the first cleaning step and the second cleaning step are the first chamber and the second chamber. By supplying a high frequency to the electrode while supplying a cleaning gas into the
The method for manufacturing a solid-state imaging device according to any one of claims 9 to 12.   14. The first cleaning step and the second cleaning step are performed by converting a cleaning gas into plasma in a plasma generation device provided outside the chamber and introducing the plasma into the chamber. The manufacturing method of the solid-state imaging device of any one of these. The insulator material that fills the opening in the first treatment step is the same as the insulator material that fills the opening in the second treatment step.
The method for manufacturing a solid-state imaging device according to claim 9, wherein the solid-state imaging device is manufactured. The film forming conditions in the first processing step and the film forming conditions in the second processing step are the same.
The method for manufacturing a solid-state imaging device according to claim 9, wherein the solid-state imaging device is manufactured. A plurality of wiring layers are arranged in the insulating layer,
The method for manufacturing a solid-state imaging device according to any one of claims 9 to 16.