CN111725090A - Semiconductor production equipment and wafer back cleaning method - Google Patents
Semiconductor production equipment and wafer back cleaning method Download PDFInfo
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- CN111725090A CN111725090A CN201910213176.8A CN201910213176A CN111725090A CN 111725090 A CN111725090 A CN 111725090A CN 201910213176 A CN201910213176 A CN 201910213176A CN 111725090 A CN111725090 A CN 111725090A
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000004140 cleaning Methods 0.000 title claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 95
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 238000007664 blowing Methods 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 189
- 238000003860 storage Methods 0.000 claims description 52
- 238000000576 coating method Methods 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 18
- 238000010926 purge Methods 0.000 claims description 15
- 239000003292 glue Substances 0.000 claims description 7
- 238000011161 development Methods 0.000 claims description 5
- 230000007547 defect Effects 0.000 abstract description 17
- 239000002245 particle Substances 0.000 abstract description 14
- 238000001816 cooling Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention provides semiconductor production equipment and a wafer back cleaning method, wherein the semiconductor production equipment comprises a first processing machine table, a second processing machine table, a first mechanical arm and an air knife; the second processing machine station is located on one side of the first processing machine station and is adjacent to the first processing machine station, a sealing door is arranged at the adjacent position of the second processing machine station and the first processing machine station, the first mechanical arm is located in the first processing machine station, and the air knife is located in the first processing machine station and located below the outer side of the sealing door and below the first mechanical arm. According to the semiconductor production equipment, the air knife is arranged on the outer side of the second processing machine, so that the back of the wafer can be cleaned by blowing dry gas before the wafer is conveyed into the second processing machine, particles on the back of the wafer are removed, defects are reduced and even avoided, and the yield of products is improved.
Description
Technical Field
The invention belongs to the technical field of integrated circuits, and particularly relates to semiconductor production equipment and a wafer back cleaning method.
Background
In the conventional semiconductor process, the back surface of the wafer is usually contaminated and particles (particles) such as dust are attached during the process of the wafer or during the wafer is transferred, and there is no apparatus and corresponding process method for cleaning the back surface of the wafer between the process; the particles on the back side of the wafer can cause defects in the subsequent process, thereby affecting the yield of the product.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a semiconductor manufacturing apparatus and a wafer backside cleaning method, which are used to solve the problem in the prior art that the defects are caused in the subsequent process due to the fact that the particles attached to the wafer backside cannot be removed in time, and further the product yield is affected.
To achieve the above and other related objects, the present invention provides a semiconductor manufacturing apparatus, comprising:
a first processing machine;
the second processing machine is positioned on one side of the first processing machine and is adjacent to the first processing machine; a sealing door is arranged at the joint of the second processing machine and the first processing machine;
a first robot arm located in the first processing machine for transferring the wafer between the first processing machine and the second processing machine; and
the air knife is positioned in the first treatment machine table, and is positioned below the outer side of the sealing door and below the first mechanical arm; the air knife is provided with an air inlet and an air outlet, the air inlet is connected with a dry gas source through an air inlet pipeline, and the air outlet is located at the top of the air knife and communicated with the air inlet.
As a preferred scheme of the present invention, the first processing machine comprises a glue spreading and developing machine; the second processing machine comprises a scanning exposure machine.
As a preferred aspect of the present invention, the first processing machine includes:
the first wafer storage unit is positioned on one side, away from the second processing machine table, of the first mechanical arm;
the photoresist coating unit is positioned on one side of the first wafer storage unit, which is far away from the first mechanical arm;
the developing unit is positioned on one side of the first wafer storage unit, which is far away from the first mechanical arm; and
and the second mechanical arm is positioned between the first wafer storage unit and the photoresist coating unit and the developing unit and is used for transferring the wafers between the first wafer storage unit and the photoresist coating unit and the developing unit.
As a preferred embodiment of the present invention, the first processing machine further includes an air shower, and the air shower is located between the first wafer storage unit and the second processing machine; the first mechanical arm and the air knife are both positioned in the air shower.
In a preferred embodiment of the present invention, the air knife and the air shower are connected to the same dry gas source.
As a preferred aspect of the present invention, the second processing machine includes:
an exposure unit;
a second wafer storage unit located between the sealing door and the exposure unit; and
and the third mechanical arm is positioned between the exposure unit and the second wafer storage unit and used for transferring the wafer between the exposure unit and the second wafer storage unit.
As a preferable aspect of the present invention, the semiconductor manufacturing apparatus further includes a gas flow meter, and the gas flow meter is located on the gas intake line.
In a preferred embodiment of the present invention, the gas flow meter controls the flow rate of the gas in the intake line to be 1.5 kg/hr to 2.5 kg/hr.
As a preferable scheme of the present invention, the top of the air knife is provided with a plurality of air outlets, and the density of the air outlets is between 40 meshes/square centimeter and 100 meshes/square centimeter.
As a preferable aspect of the present invention, when the first robot arm transfers the wafer to a position right above the air knife, a distance between a top of the air knife and a back surface of the wafer is between 10 mm and 20 mm.
The invention also provides a wafer back cleaning method, which comprises the following steps:
before the wafer is conveyed into a processing machine table, the air knife is used for blowing the back surface of the wafer so as to clean the back surface of the wafer.
As a preferable aspect of the present invention, during the purging process, a distance between a top of the air knife and a back surface of the wafer is between 10 mm and 20 mm.
In a preferred embodiment of the present invention, the gas flow rate of the purge gas during purging is between 1.5 kg/hr and 2.5 kg/hr.
As a preferred embodiment of the present invention, after the wafer is transferred into the air shower outside the processing machine, the air knife is used to purge the back surface of the wafer when the air shower is in a working state.
As described above, the semiconductor production apparatus of the present invention has the following advantageous effects:
according to the semiconductor production equipment, the air knife is arranged on the outer side of the second processing machine, so that the back of the wafer can be cleaned by blowing dry gas before the wafer is conveyed into the second processing machine, particles on the back of the wafer are removed, defects are reduced and even avoided, and the yield of products is improved;
according to the wafer back cleaning method, the air knife is used for blowing and cleaning the back of the wafer before the wafer is conveyed to the processing machine, so that particles on the back of the wafer can be removed before the wafer is conveyed into the processing machine, defects are reduced and even avoided, and the yield of products is improved.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor manufacturing apparatus according to a first embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a first wafer storage unit, a first robot arm, an air knife, a sealing door, and a second wafer storage unit in a semiconductor manufacturing apparatus according to an embodiment of the invention.
Fig. 3 is a schematic perspective view illustrating an air knife in the semiconductor manufacturing apparatus according to the first embodiment of the present invention.
Fig. 4 is a diagram showing comparative defect maps before and after cleaning the back surface of a wafer by the semiconductor manufacturing apparatus according to the first embodiment of the present invention, in which fig. 4 (a) is a diagram showing a defect map of the back surface of a wafer which has not been subjected to back surface cleaning by an air knife, and fig. 4 (b) is a diagram showing a defect map of the back surface of a wafer which has been subjected to back surface cleaning by an air knife.
Description of the element reference numerals
1 first processing machine
11 first wafer storage unit
12 photo-etching coating unit
13 developing unit
14 second robot arm
15 air shower
16 wafer loading end
2 second processing machine
21 sealing door
22 exposure unit
23 second wafer storage unit
24 second robot arm
3 first mechanical arm
4 air knife
41 air inlet
42 air outlet
5 air inlet pipeline
6 gas flowmeter
7 wafer
8 particle defect
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 4. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
Referring to fig. 1 to 3, the present invention also provides a semiconductor manufacturing apparatus, including: a first treatment machine platform 1, a second treatment machine platform 2, a first mechanical arm 3 and an air knife 4; wherein the content of the first and second substances,
the second processing machine 2 is positioned at one side of the first processing machine 1 and is adjacent to the first processing machine 1; a sealing door 21 is arranged at the adjacent position of the second processing machine platform 2 and the first processing machine platform 1;
the first robot 3 is located in the first processing machine 1, and the first robot 3 is used for transferring the wafer between the first processing machine 1 and the second processing machine 2; and
the air knife 4 is positioned in the first treatment machine table 1, and is positioned below the outer side of the sealing door 21 and below the first mechanical arm 3; the air knife 4 is provided with an air inlet 41 and an air outlet 42, the air inlet 41 is connected with a drying gas source (not shown) through an air inlet pipeline 5, and the air outlet 42 is positioned at the top of the air knife 4 and communicated with the air inlet 41.
According to the semiconductor production equipment, the air knife 4 is arranged on the outer side of the second processing machine table 2, the air knife 4 can be used for blowing and cleaning the back surface of the wafer by using dry gas before the wafer is conveyed into the second processing machine table 2, namely when the wafer is conveyed to the position right above the air knife 4 on the outer side of the sealing door 21 by the first mechanical arm 3, the air knife 4 can be used for blowing and cleaning the back surface of the wafer, so that particles on the back surface of the wafer can be removed, defects are reduced or even avoided, and the yield of products is improved.
As an example, the first processing station 1 may include a paste and develop (Track) station, and the second processing station 2 may include a scanning exposure (Scanner) station; namely, the semiconductor production equipment can be simultaneously integrated with a glue spreading and developing machine table of a photoetching process and a scanning exposure machine table of the photoetching process. The gluing and developing machine station and the scanning exposure machine station are separated by the sealing door 21, and the wafer is transmitted between the gluing and developing machine station and the scanning exposure machine station through the sealing door 21.
As an example, the first processing station 1 may include: a first wafer storage unit 11, a photoresist coating unit 12, a developing unit 13 and a second robot 14; wherein the content of the first and second substances,
the first wafer storage unit (Track storage)11 is located on a side of the first robot 3 away from the second processing machine 2;
the photoresist coating unit 12 is located at a side of the first wafer storage unit 11 away from the first robot arm 3;
the developing unit 13 is located on a side of the first wafer storage unit 11 away from the first robot arm 3; and
and a second robot arm 14, wherein the second robot arm 14 is located between the first wafer storage unit 11 and the photoresist coating unit 12 and the developing unit 13, and the second robot arm 14 is used for transferring wafers between the first wafer storage unit 11 and the photoresist coating unit 12 and the developing unit 13.
As an example, a cooling tray (ICPL) may be disposed in the first wafer storage unit 11, and the first wafer storage unit 11 is configured to temporarily store the wafer coated with the photoresist by the photoresist coating unit 12 and the wafer exposed by the second processing machine 2; when there are a plurality of cooling trays, the wafer coated with the photoresist by the photoresist coating unit 12 and the wafer processed by the second processing machine 2 are transferred to the first wafer storage unit 11 and then placed on different cooling trays.
It should be noted that the photoresist coating unit 12 includes all devices required for coating a wafer with photoresist in the existing photolithography process, such as, but not limited to, a coating chamber for coating the wafer with photoresist, a photoresist coating system, a vacuum system for controlling a vacuum degree in the coating chamber, a heating system for heating a wafer carrier tray for carrying the wafer in the coating chamber, and the like; the specific structure of the coating chamber, the photoresist coating system, the vacuum system, and the heating system are known to those skilled in the art and will not be described herein.
It should be further noted that the developing unit 13 includes all devices for developing the exposed wafer in the conventional photolithography process, such as, but not limited to, a developing chamber and a developing solution supply system; the specific structure of the developing chamber and the developing solution supply system is known to those skilled in the art, and will not be described herein.
As an example, the first robot arm 3 and the second robot arm 14 may include, but are not limited to, a fork robot arm, and the specific structure of the fork robot arm is known to those skilled in the art and will not be described herein again.
As an example, the first processing station 1 further includes an Air shower (Air shower)15, and the Air shower 15 is located between the first wafer storage unit 11 and the second processing station 2; the first mechanical arm 3 and the air knife 4 are both located in the air shower 15. The air shower 15 is configured to control an internal environment and a temperature inside the first processing machine 1, an air suction port (not shown) is formed in the top of the air shower 15, and when the air knife 4 purges the back surface of the wafer, the air shower 15 may draw the defects purged from the back surface of the wafer out of the air shower 15, so as to prevent the defects purged from contaminating the front surface of the wafer and the first processing machine 1 and the second processing machine 2. The specific structure of the air shower 15 is known to those skilled in the art and will not be described herein.
As an example, the air knife 4 and the air shower 15 may be connected to the same source of drying gas, including a Clean Dry Air (CDA) source.
As an example, the first processing station 1 further includes a wafer loading port (Load port)16, and the wafer loading port 16 is used for loading a wafer carrier (FOUP) containing wafers. A robot arm (not shown) is disposed between the wafer loading end 16 and the photoresist coating unit 12 and the developing unit 13, and the robot arm is used for transferring wafers between the wafer loading end 16 and the photoresist coating unit 12 and the developing unit 13. The robot arm may comprise a fork robot arm.
As an example, the second processing station 2 may include: an exposure unit 22, a second wafer storage unit 23, and a third robot 24; wherein the content of the first and second substances,
the second wafer storage unit 23 is located between the sealing door 21 and the exposure unit 22; and
the third robot arm 24 is located between the exposure unit 22 and the second wafer storage unit 23, and the third robot arm 24 is used for transferring the wafer between the exposure unit 22 and the second wafer storage unit 23.
As an example, a cooling tray (ICPL) may be disposed in the second wafer storage unit 23, and the second wafer storage unit 23 is configured to temporarily store the wafer transferred from the first wafer storage unit 11 and the wafer exposed by the exposure unit 22; when there are a plurality of cooling trays, the wafer transferred from the first wafer storage unit 11 and the exposure unit 22 are transferred to the second wafer storage unit 23 and then placed on different cooling trays.
It should be noted that the exposure unit 22 includes all devices for exposing the gummed wafer in the conventional photolithography process, such as but not limited to an exposure chamber and an exposure system; the specific structure of the exposure chamber and the exposure system is known to those skilled in the art and will not be described herein.
By way of example, the third robot arm 25 may include, but is not limited to, a fork robot arm, and the specific structure of the fork robot arm is known to those skilled in the art and will not be described in detail herein.
As an example, as shown in fig. 2, the semiconductor production apparatus further includes a gas flow meter 6, and the gas flow meter 6 is located on the intake pipe 5. The gas flow meter 6 is used for controlling the flow rate of the gas in the gas inlet pipeline 5, and preferably, in the embodiment, the gas flow meter 6 controls the flow rate of the gas in the gas inlet pipeline 5 to be between 1.5 kg/h and 2.5 kg/h.
As an example, there may be a communicating pipe (not shown) in the air knife 4, and both the air outlet 42 and the air inlet 41 are communicated with the communicating pipe, so as to communicate the air outlet 42 and the air inlet 41; a cavity (not shown) may also be formed in the air knife 4, and both the air outlet 42 and the air inlet 41 are communicated with the cavity, so as to communicate the air outlet 42 and the air inlet 41.
As an example, as shown in fig. 3, a plurality of air outlets 42 are provided at the top of the air knife 4, and the plurality of air outlets 42 are arranged at intervals at the top of the air knife 4, and preferably, the plurality of air outlets are arranged in an array at the top of the air knife 4. The density of the air outlets 42 may be set according to actual needs, and preferably, in this embodiment, the density of the air outlets 42 may be between 40 meshes/square centimeter and 100 meshes/square centimeter, that is, the density of the air outlets 42 may be between 40 meshes/square centimeter and 100 meshes/square centimeter.
As an example, when the first robot arm 3 transfers the wafer to a position directly above the air knife 4, a distance between the top of the air knife 4 and the back of the wafer may be set according to actual needs, and in this embodiment, preferably, when the first robot arm 3 transfers the wafer to a position directly above the air knife 4, the distance between the top of the air knife 4 and the back of the wafer may be between 10 mm and 20 mm.
The working principle of the semiconductor production equipment is as follows when the first processing machine 1 comprises a gluing and developing machine and the second processing machine 2 comprises a scanning exposure machine: firstly, the wafer box containing the wafer to be subjected to the photolithography process is loaded at the wafer loading end 16; secondly, the wafers in the wafer box are conveyed into the photoresist coating unit 12 for photoresist coating process, and after the photoresist coating process is completed, the second mechanical arm 14 conveys the wafers into the first wafer storage unit 11; thirdly, the first robot arm 3 picks up the wafer from the first wafer storage unit 11 and conveys the wafer into the second wafer storage unit 23 through the sealing door 21, in the conveying process, the air knife 4 continuously sprays cleaning and drying gas, when the wafer is conveyed to a position right above the air knife 4, the air knife 4 cleans the back surface of the wafer and conveys the wafer into the second wafer storage unit 23, and meanwhile, the air shower 15 is in a working state; thirdly, the third robot arm 24 transfers the wafer in the second wafer storage unit 23 into the exposure unit 22 for exposure, and transfers the wafer back into the second wafer storage unit 23 after the exposure is completed; then, the first robot arm 3 picks up the wafer from the second wafer storage unit 23 and conveys the wafer into the first wafer storage unit 11, in the conveying process, the air knife 4 continuously sprays cleaning and drying gas, when the wafer is conveyed to a position right above the air knife 4, the air knife 4 cleans the back surface of the wafer and conveys the wafer into the first wafer storage unit 11, and meanwhile, the air shower 15 is in a working state; then, the second robot arm 14 transfers the wafer from the first wafer storage unit 11 to the developing unit 13 for development; finally, the developed wafer is transferred back into the wafer cassette on the wafer loading end 16. It should be noted that, during the whole wafer transferring process, the air knife 4 and the air shower 15 may be uniformly and constantly in operation.
Referring to fig. 4, it can be seen from fig. 4 that after the air knife 4 is cleaned by blowing, the particle defects on the back side of the wafer are greatly reduced compared to those before cleaning by blowing, and at least 70% to 80% of the particle defects on the back side of the wafer can be removed.
Example two
Referring to fig. 1 to 4, the present invention further provides a wafer backside cleaning method, which includes the following steps: before the wafer is conveyed into the processing machine, the air knife 4 is used for blowing the back surface of the wafer so as to clean the back surface of the wafer.
As an example, the wafer back cleaning method may clean the back of a wafer in a photolithography process, and specifically, the air knife 4 may be disposed at an adjacent position between a glue development station and a scanning exposure station, and the air knife 4 performs a purging cleaning on the back of the wafer when the wafer is transferred from the glue development station to the scanning exposure station and when the wafer is transferred from the scanning exposure station to the glue development station.
As an example, the distance between the top of the air knife 4 and the back surface of the wafer may be set according to actual needs, and preferably, in this embodiment, the distance between the top of the air knife 4 and the back surface of the wafer may be between 10 mm and 20 mm.
As an example, the top of the air knife 4 is provided with a plurality of air outlets 42, the plurality of air outlets 42 are arranged at intervals on the top of the air knife 4, and preferably, the plurality of air outlets are arranged in an array on the top of the air knife 4. The density of the air outlets 42 may be set according to actual needs, and preferably, in this embodiment, the density of the air outlets 42 may be between 40 meshes/square centimeter and 100 meshes/square centimeter, that is, the density of the air outlets 42 may be between 40 meshes/square centimeter and 100 meshes/square centimeter.
As an example, the purge gas for purging the back surface of the wafer by the air knife 4 includes clean dry gas, and the gas flow rate of the purge gas during purging may be between 1.5 kg/h and 2.5 kg/h.
As an example, after the wafer is transferred into the air shower 15 where the air knife 4 is located, the air knife 4 is used to purge the back surface of the wafer when the air shower 15 is in an operating state.
As an example, the wafer backside cleaning method may be performed based on the semiconductor manufacturing apparatus described in the first embodiment, and the specific structure of the semiconductor manufacturing apparatus refers to the first embodiment and will not be described again here.
According to the wafer back cleaning method, the air knife 4 is used for blowing and cleaning the back of the wafer before the wafer is conveyed to a processing machine (such as a glue coating and developing machine or an exposure machine), so that particles on the back of the wafer can be removed before the wafer is conveyed into the processing machine, defects are reduced or even avoided, and the yield of products is improved.
In summary, the present invention provides a semiconductor manufacturing apparatus and a wafer backside cleaning method, the semiconductor manufacturing apparatus comprising: a first processing machine; the second processing machine is positioned on one side of the first processing machine and is adjacent to the first processing machine; a sealing door is arranged at the joint of the second processing machine and the first processing machine; a first robot arm located in the first processing machine for transferring the wafer between the first processing machine and the second processing machine; the air knife is positioned in the first processing machine table, and is positioned below the outer side of the sealing door and below the first mechanical arm; the air knife is provided with an air inlet and an air outlet, the air inlet is connected with a dry gas source through an air inlet pipeline, and the air outlet is located at the top of the air knife and communicated with the air inlet. According to the semiconductor production equipment, the air knife is arranged on the outer side of the second processing machine, so that the back of the wafer can be cleaned by blowing dry gas before the wafer is conveyed into the second processing machine, particles on the back of the wafer are removed, defects are reduced and even avoided, and the yield of products is improved; according to the wafer back cleaning method, the air knife is used for blowing and cleaning the back of the wafer before the wafer is conveyed to the processing machine, so that particles on the back of the wafer can be removed before the wafer is conveyed into the processing machine, defects are reduced and even avoided, and the yield of products is improved.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (14)
1. A semiconductor manufacturing apparatus, comprising:
a first processing machine;
the second processing machine is positioned on one side of the first processing machine and is adjacent to the first processing machine; a sealing door is arranged at the joint of the second processing machine and the first processing machine;
a first robot arm located within the first processing station for transferring wafers between the first processing station and the second processing station; and
the air knife is positioned in the first treatment machine table, and is positioned below the outer side of the sealing door and below the first mechanical arm; the air knife is provided with an air inlet and an air outlet, the air inlet is connected with a dry gas source through an air inlet pipeline, and the air outlet is located at the top of the air knife and communicated with the air inlet.
2. The semiconductor manufacturing apparatus of claim 1, wherein the first processing station comprises a glue application and development station; the second processing machine comprises a scanning exposure machine.
3. The semiconductor manufacturing apparatus of claim 2, wherein the first processing station comprises:
the first wafer storage unit is positioned on one side, away from the second processing machine table, of the first mechanical arm;
the photoresist coating unit is positioned on one side of the first wafer storage unit, which is far away from the first mechanical arm;
the developing unit is positioned on one side of the first wafer storage unit, which is far away from the first mechanical arm; and
and the second mechanical arm is positioned between the first wafer storage unit and the photoresist coating unit and the developing unit and is used for transferring the wafers between the first wafer storage unit and the photoresist coating unit and the developing unit.
4. The semiconductor manufacturing apparatus of claim 3, wherein the first processing station further comprises an air shower located between the first wafer storage unit and the second processing station; the first mechanical arm and the air knife are both positioned in the air shower.
5. The semiconductor manufacturing apparatus of claim 4, wherein the air knife and the air shower are connected to the same source of dry gas.
6. The semiconductor manufacturing apparatus of claim 2, wherein the second processing station comprises:
an exposure unit;
a second wafer storage unit located between the sealing door and the exposure unit; and
and the third mechanical arm is positioned between the exposure unit and the second wafer storage unit and used for transferring the wafer between the exposure unit and the second wafer storage unit.
7. The semiconductor manufacturing apparatus of claim 1, further comprising a gas flow meter located on the gas inlet line.
8. The semiconductor manufacturing apparatus of claim 7, wherein the gas flow meter controls the flow of gas in the gas inlet line between 1.5 kg/hr and 2.5 kg/hr.
9. The semiconductor production equipment as claimed in any one of claims 1 to 8, wherein the top of the air knife is provided with a plurality of air outlets, and the density of the air outlets is between 40 meshes/square centimeter and 100 meshes/square centimeter.
10. The semiconductor production apparatus of any one of claims 1 to 8, wherein when the first robot arm transfers the wafer right above the air knife, a distance between a top of the air knife and a back surface of the wafer is between 10 mm and 20 mm.
11. A wafer backside cleaning method, comprising the steps of:
before the wafer is conveyed into a processing machine table, the air knife is used for blowing the back surface of the wafer so as to clean the back surface of the wafer.
12. The wafer back side cleaning method according to claim 11, wherein the distance between the top of the air knife and the back side of the wafer during the purging process is between 10 mm and 20 mm.
13. The method of claim 11, wherein the flow rate of the purge gas during purging is between 1.5 kg/hr and 2.5 kg/hr.
14. The method of claim 11, wherein the air knife is used to purge the backside of the wafer while the air shower is in operation after the wafer is transferred into the air shower outside the processing tool.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910213176.8A CN111725090A (en) | 2019-03-20 | 2019-03-20 | Semiconductor production equipment and wafer back cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910213176.8A CN111725090A (en) | 2019-03-20 | 2019-03-20 | Semiconductor production equipment and wafer back cleaning method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230061927A1 (en) * | 2021-08-20 | 2023-03-02 | Changxin Memory Technologies, Inc. | Temperature control apparatus and temperature control method |
| US20230100048A1 (en) * | 2021-09-29 | 2023-03-30 | Changxin Memory Technologies, Inc. | Temperature control device and temperature control method |
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| CN104634087A (en) * | 2013-11-07 | 2015-05-20 | 沈阳芯源微电子设备有限公司 | Blowing device for rapidly drying surfaces of wafers |
| CN208297924U (en) * | 2018-03-21 | 2018-12-28 | 长鑫存储技术有限公司 | lithographic exposure apparatus |
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| JP2007027545A (en) * | 2005-07-20 | 2007-02-01 | Canon Inc | Semiconductor exposure device |
| CN104634087A (en) * | 2013-11-07 | 2015-05-20 | 沈阳芯源微电子设备有限公司 | Blowing device for rapidly drying surfaces of wafers |
| CN208297924U (en) * | 2018-03-21 | 2018-12-28 | 长鑫存储技术有限公司 | lithographic exposure apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20230061927A1 (en) * | 2021-08-20 | 2023-03-02 | Changxin Memory Technologies, Inc. | Temperature control apparatus and temperature control method |
| US20230100048A1 (en) * | 2021-09-29 | 2023-03-30 | Changxin Memory Technologies, Inc. | Temperature control device and temperature control method |
| US11874609B2 (en) * | 2021-09-29 | 2024-01-16 | Changxin Memory Technologies, Inc. | Temperature control device and temperature control method |
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Application publication date: 20200929 |