JPS609128A - Method for surface cleaning of article to be processed in vacuum processing device - Google Patents

Method for surface cleaning of article to be processed in vacuum processing device

Info

Publication number
JPS609128A
JPS609128A JP11726483A JP11726483A JPS609128A JP S609128 A JPS609128 A JP S609128A JP 11726483 A JP11726483 A JP 11726483A JP 11726483 A JP11726483 A JP 11726483A JP S609128 A JPS609128 A JP S609128A
Authority
JP
Japan
Prior art keywords
wafer
gas
vacuum
processed
dust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11726483A
Other languages
Japanese (ja)
Inventor
Haruo Tsuchikawa
土川 春穂
Kenichi Kawashima
川島 憲一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11726483A priority Critical patent/JPS609128A/en
Publication of JPS609128A publication Critical patent/JPS609128A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Abstract

PURPOSE:To enable to completely remove the adhered dust on a wafer before performing each process by a method wherein the dust adhered on the article to be processed is removed by blasting gas on the surface of the article to be processed simultaneously with the evacuation of a vacuum processing device which will be performed before processing. CONSTITUTION:A door 6 is closed after a wafer 10 has been completely set, a preparatory chamber 1 is evacuated by opening a valve 6, and gas is supplied to the preparatory chamber 1 for a fixed period from a pipe 4 by opening a valve 7 at the same time when said evacuation is performed or immediately before the evacuation. The supplied gas is blasted to the surface of the wafer 10, and the surface of the wafer 10 is completely cleaned up. At this time, the flow up dust is absorbed by a vacuum and exhausted from a pipe 3. Subsequently, the valve 7 is closed, the door 9 is opened, the wafer 10 is inserted to a processing chamber 2, the door 9 is closed, and a processing is performed. Thus, gas is blasted simultaneously with the evacuation of the vacuum processing device, and the dust blown off by the gas is absorbed and exhausted by a vacuum, thereby enabling to perform a complete cleaning of the article to be processed before performing a process without having manual help.

Description

【発明の詳細な説明】 おける被処理品表面清掃方法に関するものである。[Detailed description of the invention] The present invention relates to a method for cleaning the surface of a workpiece.

技術の背景 近年LSIに関する技術が進歩し素子の集枦化が進むに
伴い、ウェハーあるいはマスク乾板等の被処理品上のご
みの存在が素子製造の歩留まシを決定する主要な原因と
なっている。また、素子を製造する各装置は自動化され
人手の介入による汚れは回避される方向にあるが装置間
を長距離の搬送機構で結合するため、搬送途中でのごみ
の付着を無視できない。
Background of the technology In recent years, as LSI technology has progressed and the integration of devices has progressed, the presence of dust on processed products such as wafers and mask dry plates has become a major factor in determining the yield rate of device manufacturing. ing. Further, each device for manufacturing elements is automated, and contamination due to manual intervention is avoided, but since the devices are connected by a long-distance transport mechanism, the adhesion of dust during transport cannot be ignored.

一方、各スロセス処理は、エツチング、膜の成長、その
他真空中の処理が大半を占めている。
On the other hand, most of the various process processes include etching, film growth, and other processes in vacuum.

従来技術と問題点 従来との種の素子等の被処理品の製造に際しては、あら
かじめ被処理品を人手によシ清掃しているが、この作業
は面倒であシしかも付着ごみを完全に除去することが困
難であった。また、例え完全に清掃できたとしても、上
述のように装置間を結ぶ搬送線、構による搬送途中での
ごみ付着が起るため、この対策が別に必要となる。
Conventional technology and problems When conventionally manufacturing objects to be processed such as seed elements, the objects to be processed are manually cleaned in advance, but this work is troublesome and it is difficult to completely remove attached dust. It was difficult to do so. Moreover, even if complete cleaning is possible, as mentioned above, dust may adhere to the conveyor lines and structures connecting the apparatuses during conveyance, so additional countermeasures are required.

発明の目的 本発明は上述の問題点を解決するだめのもので、人手を
必要とせずに付着ごみを各プロセスにおける処理前に確
実に除去することのできる真空処理装置における被処理
品表面清掃方法を提供することを目的としている。
Purpose of the Invention The present invention is intended to solve the above-mentioned problems, and provides a method for cleaning the surface of a processed object in a vacuum processing apparatus, which can reliably remove adhering dust before processing in each process without requiring human labor. is intended to provide.

発明の構成 この目的は、真空処理装置内にセットされた被処理品の
表面に該装置内の処理前の真空引き期間と重ならせて気
体を吹き付けて該被処理品表面のごみを除去するように
構成することによシ達成される。
Structure of the Invention The purpose of this invention is to remove dust on the surface of a workpiece set in a vacuum processing apparatus by blowing gas onto the surface of the workpiece set in a vacuum processing apparatus, coinciding with the evacuation period before processing in the apparatus. This can be achieved by configuring it as follows.

発明の実施例 以下、図面に関連して本発明の詳細な説明する。Examples of the invention The invention will now be described in detail in conjunction with the drawings.

第1図は本発明を適用するウェハー処理装置の概要を示
す正面図で、図中、1は準備室、2はウェハー処理篩で
ある。
FIG. 1 is a front view showing an outline of a wafer processing apparatus to which the present invention is applied, and in the figure, 1 is a preparation room and 2 is a wafer processing sieve.

準備室1は、処理室2に隣接して連結され、パイプ5を
介し真空源に接続されるとともに、パイプ4を介しドラ
イN2またはドライ空気等の気体供給源に接続されてい
る。
The preparation chamber 1 is connected adjacent to the processing chamber 2 and is connected to a vacuum source via a pipe 5 and to a gas supply source such as dry N2 or dry air via a pipe 4.

処理室2は、パイプ5を介し真空源に接続されている。The processing chamber 2 is connected to a vacuum source via a pipe 5.

6.7は切&+5作用のバルブである。6.7 is a valve with OFF & +5 action.

ウェハー10は、まず準備室1内に図示のようにセット
されるが、このウェハー10の準備室1内への挿入は、
準備室1に設けられた扉8を開けて行う。ウェハー10
のセット完了後に扉6を閉じ、バルブ6を開いて該準備
室1内を真空引きするが、この真空引きと同時又はその
直前にバルブ7を開いてパイプ4より準備室1内に気体
を一定時間供給する。供給された気体は、図中矢印線で
示すようにウェハー10の表面に吹き付けられ、ウェハ
ー10の表面は確実に梢゛掃される。このとき舞い上っ
たごみは真空によシ吸引されてパイプ3よシ排出される
。その後パルプ7を閉じ、扉9を開いてウェハー10を
処理室2内に挿入し、扉9を閉じて処理を行う。なお、
処理室2内は真空引きされておシ、処理は真空中で行わ
れる。
The wafer 10 is first set in the preparation chamber 1 as shown in the figure, but the insertion of the wafer 10 into the preparation chamber 1 is as follows.
This is done by opening the door 8 provided in the preparation room 1. wafer 10
After completing the setting, the door 6 is closed and the valve 6 is opened to evacuate the preparation chamber 1. At the same time as this evacuation, or just before that, the valve 7 is opened to supply a constant amount of gas into the preparation chamber 1 from the pipe 4. Supply time. The supplied gas is blown onto the surface of the wafer 10 as shown by the arrow line in the figure, and the surface of the wafer 10 is reliably swept. The dust thrown up at this time is sucked up by a vacuum and discharged through the pipe 3. Thereafter, the pulp 7 is closed, the door 9 is opened, the wafer 10 is inserted into the processing chamber 2, the door 9 is closed, and processing is performed. In addition,
The inside of the processing chamber 2 is evacuated, and the processing is performed in vacuum.

新たなウェハーを準備室1内に供給する場合には、バル
ブ7を開き準備室1内の真空をブレークしておいて18
8を開き供給を行う。
When supplying new wafers into the preparation chamber 1, open the valve 7 to break the vacuum in the preparation chamber 1, and then open the valve 18.
8 and supply.

上述のウェハー処理工程のタイムチャートを第2図に示
す。Aはウェハのセツティング時間を、Bはパイプ4か
らの気体プロ一時間を、Cは準備室1内の真空引き時間
を、Dはウェハーを準備室1から処理室2に挿入する時
間を、Eは処理室2におけるウェハー処理時間をそれぞ
れ示している。
A time chart of the above-mentioned wafer processing step is shown in FIG. A is the setting time of the wafer, B is the time required for gas flow from the pipe 4, C is the evacuation time in the preparation chamber 1, D is the time for inserting the wafer from the preparation chamber 1 into the processing chamber 2, E indicates the wafer processing time in the processing chamber 2, respectively.

本例では真空ブレーク用の気体を処理前のウェハーに真
空引き期間と重ならせて吹き付ける例について述べたが
、真空ブレーク用の気体とは別に清掃用気体を吹き付け
るようにしても良い。
In this example, an example has been described in which the vacuum break gas is sprayed onto the wafer before processing at the same time as the evacuation period, but cleaning gas may be sprayed separately from the vacuum break gas.

発明の動床 以上述べたように、本発明によれば、真空処理装置内に
セットされたウェハー等の被処理品の表面に、該装置内
の処理前の真空引き期間と重ならせて気体を吹き付ける
ようになっておシ、この気体によシ吹き飛ばされたごみ
が真空にょシ吸引。
Moving bed of the invention As described above, according to the present invention, gas is applied to the surface of a workpiece, such as a wafer, set in a vacuum processing apparatus, overlapping the evacuation period before processing in the apparatus. The dust blown away by this gas is sucked into the vacuum.

排出されるため、処理前の被処理品の清掃を人手を要さ
ずに確実に行うことが可能である。またこのような処理
を各プロセスにおける処理前に行うようにすれば、各プ
訃間の搬送時におけるごみ付着の問題を解決することが
可能である。
Since it is discharged, it is possible to reliably clean the items to be processed before processing without requiring any manual labor. Moreover, if such processing is performed before processing in each process, it is possible to solve the problem of dust adhesion during transportation between each carcass.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明に係る真空処理装置における被処理品表面
清掃方法の実施例を示すもので、第1図は真空処理装置
の概要を示す正面図、第2図は処理工程のタイムチャー
トである。 図中、1は準備室、2はウェハー処理室、3,4゜5は
パイプ、6,7はバルブ、8,9は扉、1oはウェハー
(被処理品)である。 特許出願人 富士通株式会社 代理人弁理士玉晶久五部(外1名) 第1図 第21図 一一−F ゆ開
The drawings show an embodiment of the method for cleaning the surface of a workpiece in a vacuum processing apparatus according to the present invention, and FIG. 1 is a front view showing an overview of the vacuum processing apparatus, and FIG. 2 is a time chart of the processing steps. In the figure, 1 is a preparation room, 2 is a wafer processing chamber, 3, 4.5 is a pipe, 6, 7 is a valve, 8, 9 is a door, and 1o is a wafer (product to be processed). Patent Applicant: Fujitsu Ltd. Representative Patent Attorney Kugobe Tamaaki (1 other person) Figure 1 Figure 21 Figure 11-F Yukai

Claims (1)

【特許請求の範囲】[Claims] 真空処理装置内にセットされた被処理品の表面に、該装
置内の真空引き期間と重ならせて気体を吹き伺けて該処
理品の表面のごみを除去することを特徴とする真空処理
装置における被処理品表面清掃方法。
Vacuum processing characterized by blowing gas onto the surface of an item to be processed set in a vacuum processing apparatus to coincide with the evacuation period in the apparatus to remove dust on the surface of the item to be processed. A method for cleaning the surface of a workpiece in an apparatus.
JP11726483A 1983-06-29 1983-06-29 Method for surface cleaning of article to be processed in vacuum processing device Pending JPS609128A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11726483A JPS609128A (en) 1983-06-29 1983-06-29 Method for surface cleaning of article to be processed in vacuum processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11726483A JPS609128A (en) 1983-06-29 1983-06-29 Method for surface cleaning of article to be processed in vacuum processing device

Publications (1)

Publication Number Publication Date
JPS609128A true JPS609128A (en) 1985-01-18

Family

ID=14707453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11726483A Pending JPS609128A (en) 1983-06-29 1983-06-29 Method for surface cleaning of article to be processed in vacuum processing device

Country Status (1)

Country Link
JP (1) JPS609128A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218037A (en) * 1985-07-17 1987-01-27 Wakomu:Kk Pass-through room
US4889564A (en) * 1986-09-05 1989-12-26 Fuji Photo Film Co., Ltd. Magnetic disk cleaning method and apparatus
JPH02130921A (en) * 1988-11-11 1990-05-18 Taiyo Sanso Co Ltd Cleaning equipment for solid surface

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218037A (en) * 1985-07-17 1987-01-27 Wakomu:Kk Pass-through room
US4889564A (en) * 1986-09-05 1989-12-26 Fuji Photo Film Co., Ltd. Magnetic disk cleaning method and apparatus
JPH02130921A (en) * 1988-11-11 1990-05-18 Taiyo Sanso Co Ltd Cleaning equipment for solid surface

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