JPH02291151A - Manufacture of multilayer interconnection structure - Google Patents
Manufacture of multilayer interconnection structureInfo
- Publication number
- JPH02291151A JPH02291151A JP11152689A JP11152689A JPH02291151A JP H02291151 A JPH02291151 A JP H02291151A JP 11152689 A JP11152689 A JP 11152689A JP 11152689 A JP11152689 A JP 11152689A JP H02291151 A JPH02291151 A JP H02291151A
- Authority
- JP
- Japan
- Prior art keywords
- film
- component
- aromatic
- formulas
- resin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000011229 interlayer Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 15
- 125000003118 aryl group Chemical group 0.000 claims abstract description 10
- -1 aminosilicon compound Chemical class 0.000 claims abstract description 7
- 150000002222 fluorine compounds Chemical class 0.000 claims abstract description 7
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 150000004984 aromatic diamines Chemical class 0.000 claims abstract description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 229920005575 poly(amic acid) Polymers 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 4
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 239000011347 resin Substances 0.000 abstract description 21
- 229920005989 resin Polymers 0.000 abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 18
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 4
- CNODSORTHKVDEM-UHFFFAOYSA-N 4-trimethoxysilylaniline Chemical compound CO[Si](OC)(OC)C1=CC=C(N)C=C1 CNODSORTHKVDEM-UHFFFAOYSA-N 0.000 abstract description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 abstract description 2
- APXJLYIVOFARRM-UHFFFAOYSA-N 4-[2-(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(C(O)=O)C(C(O)=O)=C1 APXJLYIVOFARRM-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract description 2
- 238000000137 annealing Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- 239000004952 Polyamide Substances 0.000 abstract 1
- 125000006157 aromatic diamine group Chemical group 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 abstract 1
- 239000005365 phosphate glass Substances 0.000 abstract 1
- 229920002647 polyamide Polymers 0.000 abstract 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 15
- 229920001721 polyimide Polymers 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 7
- 238000001444 catalytic combustion detection Methods 0.000 description 6
- 239000009719 polyimide resin Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- OBFQBDOLCADBTP-UHFFFAOYSA-N aminosilicon Chemical compound [Si]N OBFQBDOLCADBTP-UHFFFAOYSA-N 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造方法に関し、特に、弗素化
合物と、シリコン化合物とを含有するポリイミド膜を層
間絶縁膜として用いる多層配線構造体の製造方法に関す
る。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a multilayer wiring structure using a polyimide film containing a fluorine compound and a silicon compound as an interlayer insulating film. Regarding the manufacturing method.
従来、この種の多層配線に用いる層間絶縁膜としては、
例えば、特公昭６ ０−３ ９ ８ ４ ７号公報にあ
るように、ポリイミド樹脂膜が用いられている。すなわ
ち、第５図に示すように、シリコン基板５０１上に酸化
膜５０２を形成し、第１層配線（シリコン含有アルミニ
ウム）５０３を形成する。Conventionally, the interlayer insulating film used for this type of multilayer wiring is
For example, as disclosed in Japanese Patent Publication No. 60-39847, a polyimide resin film is used. That is, as shown in FIG. 5, an oxide film 502 is formed on a silicon substrate 501, and a first layer wiring (silicon-containing aluminum) 503 is formed.
続いて、ポリイミド樹脂層間絶縁膜５０４を形成し、ス
ルーホール５０５，第２層配線５０６を形成することに
よって、２層配線を形成する。Subsequently, a polyimide resin interlayer insulating film 504 is formed, and a through hole 505 and a second layer wiring 506 are formed to form a two-layer wiring.
上述した従来のポリイミド樹脂膜は、吸湿性が高いこと
、また、吸湿に起因する膜特性の劣化があること、さら
にシリコン酸化膜、シリコン窒化膜等の無機膜との接着
性が悪いこと等の欠点があり、これらを多層配線層間膜
として用いた超ＬＳＩの信頼性を著しく低下させてしま
うという問題がある。The conventional polyimide resin film described above has high hygroscopicity, deterioration of film properties due to moisture absorption, and poor adhesion with inorganic films such as silicon oxide films and silicon nitride films. There is a problem in that the reliability of VLSIs using these as interlayer films for multilayer wiring is significantly lowered.
また、一般にポリイミド樹脂膜は、可視光の透過率が低
いため、撮像用ＣＣＤ（Ｃｈａｒｇｅ Ｃｏｕｐｌｅｄ
Ｄｅｖｉｃｅ）等のように光学用途では、配線層間絶縁
膜として用いることができない。In addition, since polyimide resin films generally have low visible light transmittance, they are used in CCDs (Charge Coupled CCDs) for imaging.
In optical applications such as devices, it cannot be used as an interlayer insulation film for wiring.
本発明の多層配線構造体の製造方法は、芳香族テトラカ
ルボン酸二無水成分と、芳香族シアミン成分の少くとも
１つに弗素化合物を含有し、かつ、ハ゛
アミノシリコン化合物性分を含有してなるポリアミド酸
溶液を塗布・熱処理せしめることによって形成した膜を
層間絶縁膜として用いており、上記の、芳香族テトラカ
ルボン酸二無水物成分，芳香族ジアミン成分，弗素を含
有する芳香族テトラポン酸二無水物成分，弗素を含有す
る芳香族シアミン成分，アミノシリコン化合物成分は、
それぞれ、式（１）〜（５）で表わされる。The method for producing a multilayer wiring structure of the present invention includes a method for producing a multilayer wiring structure in which at least one of an aromatic tetracarboxylic dianhydride component and an aromatic cyamine component contains a fluorine compound, and also contains a diaminosilicon compound component. A film formed by applying and heat-treating a polyamic acid solution is used as an interlayer insulating film. The anhydride component, fluorine-containing aromatic cyamine component, and amino silicon compound component are
Each is represented by formulas (1) to (5).
Ｎｌｌ，− Ｒ’ − ＮＨ２ − − （
２）式（１）〜（５）において、Ｒ１は４個の炭素環式
芳香族基な表わし、Ｒ２ぱ、炭素数６−３０個の芳香脂
肪族基、又は、炭素数６〜３０個の炭素環式芳香族基、
Ｒ３＆ひＲ４は独立に炭素数１〜６のアル・）・ル基又
はフェニル基であり、１（ぱ１≦［ぐ≦３の整数てある
。Nll, - R' - NH2 - - (
2) In formulas (1) to (5), R1 represents 4 carbocyclic aromatic groups, R2 represents an aromatic aliphatic group having 6 to 30 carbon atoms, or an aromatic aliphatic group having 6 to 30 carbon atoms. carbocyclic aromatic group,
R3 & R4 are independently an aru group having 1 to 6 carbon atoms or a phenyl group, and are an integer of 1≦[g≦3.
本発明においては、ボリイミｌ−樹脂膜成分中に、アミ
ノシリコン化合物成分を化学的に結合せしめることによ
り、無機膜との接着性を改善し、さらに撥水性の高い弗
素化合物を化学的に結合せしめることにより、吸湿によ
る膜質劣化を軽減し、かつ、可視光の透過率を向上せし
めた樹脂膜を層間絶縁膜のして用いる。In the present invention, an amino silicon compound component is chemically bonded to the polyimi l-resin film component to improve adhesion to the inorganic film, and a fluorine compound with high water repellency is further chemically bonded. As a result, a resin film that reduces film quality deterioration due to moisture absorption and improves visible light transmittance is used as an interlayer insulating film.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
本実施例で用いた樹脂膜形成用塗布液として、主成分が
芳香族ジアミン成分であるジアミノジフェニルエーテル
と、アミノシリコン化合物成分であるＰ・アミノフェニ
ルトリメトキシシランと、また、弗素化合物を含む酸二
無水物成分である２．２−ビス（ ３． ４−ジカルボ
キシフェニル）へキザフルオロプロパンとの３つの化合
物から成り、溶媒がジメチルアセトアミドである溶液を
用いた。Ｐ・アミノフェニルトリメトキシシラン成分，
２．２一ビス（３．４−ジカルボキシフェニル）ヘキサ
フリオロプロパン２無水物成分の樹脂中濃度は、それぞ
れ、２０ｍｏ１％，５０ｍｏ１％とした。また、溶液中
の固形分濃度を２５ｗｅｉｇｈｔ％２粘度を約２ ５
０ ｃｍｐｏｉｓｅとした。The resin film-forming coating liquid used in this example contained diaminodiphenyl ether whose main components were aromatic diamine components, P-aminophenyltrimethoxysilane which was an aminosilicon compound component, and acid diphenyl ether containing a fluorine compound. A solution consisting of three compounds with 2,2-bis(3.4-dicarboxyphenyl)hexafluoropropane as an anhydride component and dimethylacetamide as a solvent was used. P-aminophenyltrimethoxysilane component,
The concentrations of the 2.2-bis(3.4-dicarboxyphenyl)hexafluoropropane dianhydride component in the resin were 20 mo1% and 50 mo1%, respectively. In addition, the solid concentration in the solution is 25 weight%2 the viscosity is approximately 25
It was set to 0 cmpoise.
本発明の第１の実施例では、本発明に基づく樹脂膜を２
層アルミニウム配線の層間絶縁膜として用いた場合につ
いて述べる。In the first embodiment of the present invention, two resin films based on the present invention are used.
The case where it is used as an interlayer insulating film for layered aluminum wiring will be described.
第１図（ａ）〜（ｄ）は、２層アルミニウム配線の形成
方法を示す工程断面図である。FIGS. 1(a) to 1(d) are process cross-sectional views showing a method of forming a two-layer aluminum wiring.
第１図（ａ）に示すように素子基板１０１上に厚さ約０
８μｍのリンガラス膜１０２を形成後、厚さ約ｌμｍの
第１のアルミニウム配線１０３を形成する。次に、本発
明に基づく樹脂膜形成用塗布溶液を４０００回転／分で
３０秒間、回転塗布し、１００℃で３０分間，２５０℃
で３０分間，窒素ガス雰囲気のオーブン中で熱処理する
。続いて、３５０℃で６０分間、窒素ガス雰囲気の炉内
でアニールを行うことによって、同図（ｂ）のように厚
さ約１．２μｍの樹脂膜１． ０ ４を形成する。次に
、公知のフォトリングラフィー，ドライエッチング技術
により、同図（ｃ）に示すように形成した樹脂膜に開口
１０５を形成し、次に、厚さ約１μｍの７ｋミニウム膜
をスパッタ法により形成し、フォトリソグラフィー ド
ライエッチングにより厚さ約１μｍの第２のアルミニウ
ム配線を形成することによって同図（ｄ）に示すように
２層アルミニウム配線が形成できる。As shown in FIG. 1(a), a layer of about 0 thickness
After forming the phosphorus glass film 102 with a thickness of 8 μm, a first aluminum wiring 103 with a thickness of about 1 μm is formed. Next, the coating solution for forming a resin film based on the present invention was spin-coated at 4000 rpm for 30 seconds, then at 100°C for 30 minutes and then at 250°C.
Heat-treated in an oven under a nitrogen gas atmosphere for 30 minutes. Subsequently, by annealing at 350° C. for 60 minutes in a furnace with a nitrogen gas atmosphere, a resin film 1.2 with a thickness of about 1.2 μm is formed as shown in FIG. Form 0 4. Next, using known photolithography and dry etching techniques, an opening 105 is formed in the formed resin film as shown in FIG. However, by forming a second aluminum wiring with a thickness of about 1 μm by photolithography and dry etching, a two-layer aluminum wiring can be formed as shown in FIG.
形成した２層アルミニウム配線の１層−２層配線間の接
続歩留りは９８％以上と良好であり、配線抵抗を含む接
続抵抗は、直径１μｍの開口で、約１２０ｍΩと小さく
、実用上、問題ないものである。また、本発明に基づく
層間絶縁膜のリーク電流は、第２図に示すように従来の
ポリイミド膜を用いた場合の１７５と小さい値である。The connection yield between the 1st layer and 2nd layer wiring of the formed 2-layer aluminum wiring is good at over 98%, and the connection resistance including wiring resistance is as small as about 120 mΩ for an opening with a diameter of 1 μm, so there is no problem in practical use. It is something. Further, the leakage current of the interlayer insulating film according to the present invention is as small as 175 when a conventional polyimide film is used, as shown in FIG.
また、純水中で３０日間放置し、リーク電流の経時変化
を調べたところ、従来のポリイミド膜では、経時変化が
認められたが、本発明に基づく樹脂膜では、リーク電流
の増加は全く認められなかった。Furthermore, when the leakage current changed over time after being left in pure water for 30 days, it was found that the conventional polyimide film showed a change over time, but the resin film based on the present invention showed no increase in leakage current. I couldn't.
第２の実施例では、撮像用、ＣＯＤの遮光用金属膜と、
Ａρ配線との層間絶縁膜の一部に本発明に基づく樹脂膜
を用いた場合について述べる。In the second embodiment, a metal film for imaging and for COD light shielding,
A case will be described in which the resin film based on the present invention is used as a part of the interlayer insulating film with the Aρ wiring.
第３図（ａ）〜（ｅ）は、木発明の第２の実施例の工程
断面図である。第３図（ａ）な示すように、フォトダイ
オード、ＣＯＤが形成された基板３０１において、ゲー
ト酸化膜３０２を介して形成されたゲート電極３０３上
に、同図（ｂ）に示すように厚さ約０．３μｍのシリコ
ン酸化膜３０４を形成する。次に同図（Ｃ）に示すよう
にスパッタ法により厚さ約０．２μｍのアルミニウム膜
又は、タングステン膜等の金属膜を形成した後パターニ
ングすることによって、遮光膜３０５を形成する。続い
て同図（ｄ）に示すように本発明に基づく樹脂膜３０６
を第１の実施例と同条件で塗布・熱処理形成する。FIGS. 3(a) to 3(e) are process cross-sectional views of the second embodiment of the wooden invention. As shown in FIG. 3(a), on a substrate 301 on which a photodiode and a COD are formed, a gate electrode 303 formed through a gate oxide film 302 is coated with a thickness as shown in FIG. 3(b). A silicon oxide film 304 of approximately 0.3 μm is formed. Next, as shown in FIG. 3C, a light shielding film 305 is formed by forming a metal film such as an aluminum film or a tungsten film with a thickness of about 0.2 μm by sputtering and then patterning the film. Subsequently, as shown in the same figure (d), a resin film 306 based on the present invention is formed.
was coated and heat-treated under the same conditions as in the first embodiment.
次に公知のフォトリソグラフィー・ドライエッチング技
術を用いて、開口を形成後、厚さ約１μｍのアルミニウ
ム膜を形成・パタ一二ソグすることニヨって、同図（ｅ
）に示すように、アルミニウム配線３０７を形成する。Next, after forming an opening using a known photolithography/dry etching technique, an aluminum film with a thickness of approximately 1 μm was formed and patterned.
), an aluminum wiring 307 is formed.
以上の工程で形成した、撮像用ＣＣＤは層間絶縁膜が平
坦であることから、その撮像特性は良好なものであった
。Since the imaging CCD formed through the above steps had a flat interlayer insulating film, its imaging characteristics were good.
また、本発明で用いた厚さ約１．２μｍの樹脂膜の可視
光における透過率は第４図に示すように、４００〜７０
０ｎｍの波長範囲で９５％以上であり、これは、従来の
ポリイミド膜の透過率に比べて、高いものであり、撮像
用ＣＣＤの層間膜として充分適用可能であることを示し
ている。Furthermore, the visible light transmittance of the resin film with a thickness of about 1.2 μm used in the present invention is 400 to 70, as shown in FIG.
The transmittance is 95% or more in the wavelength range of 0 nm, which is higher than the transmittance of conventional polyimide films, indicating that it is sufficiently applicable as an interlayer film for imaging CCDs.
以上説明したように、本発明は、ポリイミド樹脂膜中に
アミノシリコン化合物と、弗素化合物を含有せしめるこ
とによって、無機膜との接着性を改善し、かつ、吸湿に
起因する膜特性の劣化をおさえた樹脂膜を多層配線層間
絶縁膜として用いることにより、信頼性を著しく改善し
た超ＬＳＩの製造が可能となるという効果がある。As explained above, the present invention improves adhesion with an inorganic film and suppresses deterioration of film properties due to moisture absorption by containing an aminosilicon compound and a fluorine compound in a polyimide resin film. By using the resin film as an insulating film between multilayer wiring layers, it is possible to manufacture a very large scale integrated circuit (VLSI) with significantly improved reliability.
また、本発明に基づく樹脂膜は、可視光の透過率が高い
という利点を合せ持つようになり、従来のポリイミド膜
では不可能であった。光学用途、例えば、撮像用ＣＣＤ
の層間絶縁膜として充分適用可能であるという利点があ
り、かつ、平坦性の高い配線構造が得られることから、
その撮像特性は著しく改善されるという効果を有してい
る。Furthermore, the resin film based on the present invention also has the advantage of high visible light transmittance, which was not possible with conventional polyimide films. Optical applications, e.g. CCD for imaging
It has the advantage of being fully applicable as an interlayer insulating film, and also provides a highly flat wiring structure.
This has the effect that the imaging characteristics are significantly improved.
以上、述べたように、本発明の多層配線構造体の製造方
法は、超ＬＳＩに多犬な効果をもたらす。As described above, the method for manufacturing a multilayer wiring structure according to the present invention brings many benefits to VLSI.
さらに、層間絶縁膜としてばかりでなく、表面保護膜と
しても充分適用可能である。Furthermore, it is fully applicable not only as an interlayer insulating film but also as a surface protective film.
第１図（ａ）〜（ｄ）は、本発明の第１の実施例である
。２層アルミニウム配線の製造方法を示す工程断面図で
ある。同図において、
１０１・・・・・・素子基板、１０２・・・・・リンガ
ラス膜、１０３・・・・・・第１のアルミニウム配線、
１０４・・・・本発明に基づく樹脂膜、１０５・・・・
・開口、１０６・・・・・・第２のアルミニウム配線で
ある。
第２図は、本発明に基づく樹脂膜を送還絶縁膜として用
いるときの効果を示す図である。同図において、横軸は
、放置時間、縦軸は、リーク電流密度である。
第３図（ａ）〜（ｅ）は、本発明の第２の実施例である
。撮像用ＣＯＤの製造方法を示す工程断面図である。同
図において、
３０１・・・・・・基板、３０２・・・・・・ゲート酸
化膜、３０３・・・・・・ゲー１・電極、３０４ ・・
・シリコン酸化膜、３０５・・・・・遮光膜、３０６・
・・・・本発明に基づく樹脂膜、３０７・・・・・・ア
ルミニウム配線である。
第４図は、本発明に基づく樹脂膜を、撮像用ＣＣＤの層
間絶縁膜として用いる場合の効果を示す図である。同図
において、横軸は、波長、縦軸は透過率である。
第５図は、従来のポリイミド膜を層間絶縁膜として用い
た２層アルミニウム配線構造体の、断面を示す図である
。
同図において、５０］・・・・・シリコン基板、５０２
・・・・・酸化膜、５０３・・・・・・第１層配線（シ
リコン含有アルミニウム）、５０４・・・・ポリイミド
樹脂層間絶！膜、５ ０ ５・・・・・・スルーホール
、５０６・・第２層配線（シリコン含有アルミニウム）
である。
代理人 弁理士 内 原 晋FIGS. 1(a) to 1(d) show a first embodiment of the present invention. FIG. 3 is a process cross-sectional view showing a method for manufacturing a two-layer aluminum wiring. In the figure, 101... element substrate, 102... phosphor glass film, 103... first aluminum wiring,
104... Resin film based on the present invention, 105...
- Opening, 106... Second aluminum wiring. FIG. 2 is a diagram showing the effect when the resin film based on the present invention is used as a return insulating film. In the figure, the horizontal axis is the standing time, and the vertical axis is the leakage current density. FIGS. 3(a) to 3(e) show a second embodiment of the present invention. It is a process sectional view showing the manufacturing method of COD for imaging. In the figure, 301...substrate, 302...gate oxide film, 303...gate 1 electrode, 304...
・Silicon oxide film, 305... Light shielding film, 306.
. . . Resin film based on the present invention, 307 . . . Aluminum wiring. FIG. 4 is a diagram showing the effect when the resin film based on the present invention is used as an interlayer insulating film of an imaging CCD. In the figure, the horizontal axis is wavelength and the vertical axis is transmittance. FIG. 5 is a cross-sectional view of a two-layer aluminum wiring structure using a conventional polyimide film as an interlayer insulating film. In the same figure, 50]...Silicon substrate, 502
... Oxide film, 503 ... First layer wiring (silicon-containing aluminum), 504 ... Polyimide resin layer intermission! Film, 5 0 5... Through hole, 506... 2nd layer wiring (aluminum containing silicon)
It is. Agent Patent Attorney Susumu Uchihara
Claims (2)
ジアミン成分の少くとも１つに弗素化合物を含有し、か
つ、アミノシリコン化合物成分を含有してなるポリアミ
ド酸溶液を塗布・熱処理せしめることによって形成した
膜を層間絶縁膜として用いることを特徴とする多層配線
構造体の製造方法。(1) Applying and heat-treating a polyamic acid solution containing a fluorine compound in at least one of an aromatic tetracarboxylic dianhydride component and an aromatic diamine component, and also containing an aminosilicon compound component. A method for manufacturing a multilayer wiring structure, characterized in that a film formed by the method is used as an interlayer insulating film.
芳香族ジアミン成分、前記弗素を含有する芳香族テトラ
カルボン酸二無水物成分、前記弗素を含有する芳香族ジ
アミン成分、前記アミノシリコン化合物成分は、それぞ
れ、式（１）〜（５）で表わされることを特徴とする多
層配線構造体の製造方法。 ▲数式、化学式、表等があります▼……（１） ＮＨ＿２−Ｒ＾２−ＮＨ＿２……（２） ▲数式、化学式、表等があります▼……（３） ▲数式、化学式、表等があります▼……（４） ▲数式、化学式、表等があります▼……（５） 式（１）〜（５）において、Ｒ＾１は４価の炭素環式芳
香族基を表わし、Ｒ＾２は、炭素数６〜３０個の芳香脂
肪族基、又は、炭素数６〜３０個の炭素環式芳香族基、
Ｒ＾３及びＲ＾４は独立に炭素数１〜６のアルキル基又
はフェニル基であり、Ｋは１≦Ｋ≦３の整数である。(2) The aromatic tetracarboxylic dianhydride component, the aromatic diamine component, the fluorine-containing aromatic tetracarboxylic dianhydride component, the fluorine-containing aromatic diamine component, and the aminosilicon compound component A method for manufacturing a multilayer wiring structure, characterized in that these are represented by formulas (1) to (5), respectively. ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(1) NH_2-R^2-NH_2...(2) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(3) ▲Mathematical formulas, chemical formulas, tables, etc. Yes▼...(4) ▲There are mathematical formulas, chemical formulas, tables, etc.▼...(5) In formulas (1) to (5), R^1 represents a tetravalent carbocyclic aromatic group, and R^ 2 is an aromatic aliphatic group having 6 to 30 carbon atoms or a carbocyclic aromatic group having 6 to 30 carbon atoms;
R^3 and R^4 are independently an alkyl group having 1 to 6 carbon atoms or a phenyl group, and K is an integer satisfying 1≦K≦3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11152689A JPH02291151A (en) | 1989-04-28 | 1989-04-28 | Manufacture of multilayer interconnection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11152689A JPH02291151A (en) | 1989-04-28 | 1989-04-28 | Manufacture of multilayer interconnection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02291151A true JPH02291151A (en) | 1990-11-30 |
Family
ID=14563569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11152689A Pending JPH02291151A (en) | 1989-04-28 | 1989-04-28 | Manufacture of multilayer interconnection structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02291151A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100231127B1 (en) * | 1995-10-13 | 1999-11-15 | 슈틀러, 에스. 쇤 | Polyimide Alignment Film from 2,2-Bis(3,4-Dicarboxyphenyl)-Hexafluoropropane Dianhydride and Ortho-Substituted Aromatic Diamines for Active Matrix Liquid Crystal Displays |
-
1989
- 1989-04-28 JP JP11152689A patent/JPH02291151A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100231127B1 (en) * | 1995-10-13 | 1999-11-15 | 슈틀러, 에스. 쇤 | Polyimide Alignment Film from 2,2-Bis(3,4-Dicarboxyphenyl)-Hexafluoropropane Dianhydride and Ortho-Substituted Aromatic Diamines for Active Matrix Liquid Crystal Displays |
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