JPH01225339A - Manufacture of multilayer wiring structure using resin interlayer film - Google Patents
Manufacture of multilayer wiring structure using resin interlayer filmInfo
- Publication number
- JPH01225339A JPH01225339A JP5213388A JP5213388A JPH01225339A JP H01225339 A JPH01225339 A JP H01225339A JP 5213388 A JP5213388 A JP 5213388A JP 5213388 A JP5213388 A JP 5213388A JP H01225339 A JPH01225339 A JP H01225339A
- Authority
- JP
- Japan
- Prior art keywords
- film
- chemical vapor
- plasma chemical
- vapor deposition
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011347 resin Substances 0.000 title claims abstract description 29
- 229920005989 resin Polymers 0.000 title claims abstract description 29
- 239000011229 interlayer Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010408 film Substances 0.000 claims abstract description 85
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 10
- 125000003118 aryl group Chemical group 0.000 claims abstract description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000013039 cover film Substances 0.000 claims abstract description 6
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000004985 diamines Chemical class 0.000 claims abstract description 4
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 18
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 4
- 229920005575 poly(amic acid) Polymers 0.000 claims description 3
- OBFQBDOLCADBTP-UHFFFAOYSA-N aminosilicon Chemical compound [Si]N OBFQBDOLCADBTP-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 6
- -1 aminosilicon compound Chemical class 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- 239000004952 Polyamide Substances 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 2
- 229920002647 polyamide Polymers 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 230000037303 wrinkles Effects 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 239000009719 polyimide resin Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 2
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、樹脂層間膜を用いた多層配線構造体の製造方
法に関し、特に耐湿性が強化さｈた樹脂層間膜を利用し
た多層配線構造体の製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a multilayer wiring structure using a resin interlayer film, and in particular to a multilayer wiring structure using a resin interlayer film with enhanced moisture resistance. Concerning a method of manufacturing a body.
従来、樹脂膜を層間絶縁膜として用いる多層配線は、樹
脂膜として耐熱性に優れたポリイミド樹脂すなわち芳香
族テトラカルボン酸二無水物と芳香族ジアミンとを等モ
ルで反応せしめることによって形成したポリアミド酸溶
液を加熱重合せしめることによって形成した膜を用いて
いる。Conventionally, multilayer wiring using a resin film as an interlayer insulating film has been made using polyimide resin, which has excellent heat resistance, as the resin film, that is, polyamic acid formed by reacting equimolar amounts of aromatic tetracarboxylic dianhydride and aromatic diamine. A film formed by heating and polymerizing a solution is used.
しかしながら上述したポリイミド樹脂は、このポリイミ
ド樹脂膜上に耐湿性強化のためにパッシベーション膜と
してプラズマ化学気相成長によるシリコン窒化膜等の無
機膜を形成したときにその無機膜にクラックが発生した
り（ＳｅｍｉｃｏｎｄｕｃｔｏｒＷｏｒｌｄ １９８
８年１０月号第４０頁）、しわが発生するという欠点が
あり、著しく耐湿性信頼性を劣化させるという問題があ
る。However, with the above-mentioned polyimide resin, when an inorganic film such as a silicon nitride film is formed by plasma chemical vapor deposition as a passivation film on the polyimide resin film to strengthen moisture resistance, cracks may occur in the inorganic film ( Semiconductor World 198
(October 2008, p. 40), there is a problem in that wrinkles occur, and the moisture resistance reliability is significantly deteriorated.
本発明の目的は上記問題点を解消したすなわち耐湿性の
強化された樹脂層間膜を用いた多層配線構造体の製造方
法を提供することにある。An object of the present invention is to provide a method for manufacturing a multilayer wiring structure using a resin interlayer film that eliminates the above-mentioned problems, that is, has enhanced moisture resistance.
本発明の樹脂層間膜を用いた多層配線構造体の製造方法
は、層間絶縁樹脂膜が下記の式（１）で表わされる芳香
族テトラカルボン酸二無水物と、式（２）で表わされる
ジアミンと、式（３）で表わされるアミノシリコン化合
物とを混合反応せしめることによって形成されるポリア
ミド酸シリコン型中間体を含有してなる溶液を塗布・熱
処理せしめることによって形成され、かつ、その層間絶
縁膜上に最終金属配線を形成後、３００〜４５０℃の温
度で熱処理をし、プラズマ化学気相成長シリコン窒化膜
又はプラズマ化学気相成長シリコン酸化窒化膜又は、プ
ラズマ化学気相成長シリコン酸化窒化膜と、プラズマ化
学気相成長シリコン窒化膜との２層膜によるカバー膜を
形成することを特徴としている。In the method for manufacturing a multilayer wiring structure using a resin interlayer film of the present invention, the interlayer insulating resin film is composed of an aromatic tetracarboxylic dianhydride represented by the following formula (1) and a diamine represented by the formula (2). and an aminosilicon compound represented by formula (3), and an interlayer insulating film formed by applying and heat-treating a solution containing a polyamic acid silicon type intermediate formed by mixing and reacting with an amino silicon compound represented by formula (3). After forming the final metal wiring thereon, heat treatment is performed at a temperature of 300 to 450°C to form a plasma chemical vapor deposition silicon nitride film, a plasma chemical vapor deposition silicon oxynitride film, or a plasma chemical vapor deposition silicon oxynitride film. The method is characterized in that a cover film is formed as a two-layer film including a plasma-enhanced chemical vapor deposition silicon nitride film.
ＮＨｔ Ｒ” ＮＨｔ ・・
・・・・（２）ＮＨｔ−８Ｓｉ −Ｒ１−ｘ （ＯＲつ
、・・・・・・（３）式（１）〜（３）において、Ｒ１
は４価の炭素環式芳香族基を表わし、Ｒ２は炭素数６〜
３０個の芳香脂肪族又は、炭素数６〜３０個の炭素環式
芳香族基、Ｒ３及びＲ４は独立に、炭素数１〜６のアル
キル基又はフェニル基であり、Ｋは１≦に≦３の値であ
る。NHt R" NHt...
...... (2) NHt-8Si -R1-x (OR) ...... (3) In formulas (1) to (3), R1
represents a tetravalent carbocyclic aromatic group, and R2 has 6 to 6 carbon atoms.
30 aromatic aliphatic or carbocyclic aromatic groups having 6 to 30 carbon atoms, R3 and R4 are independently an alkyl group having 1 to 6 carbon atoms or a phenyl group, and K is 1≦≦3 is the value of
さらに上記のプラズマ化学気相成長シリコン窒化膜又は
プラズマ化学気相成長シリコン窒化膜はその内部応力が
圧縮応力でありその大きさが、１０ ”−１０”ｄｙｎ
ｅ／ａＡであることを特徴としている。Furthermore, the internal stress of the plasma chemical vapor deposition silicon nitride film or the plasma chemical vapor deposition silicon nitride film described above is compressive stress, and the magnitude thereof is 10"-10" dyn.
It is characterized by being e/aA.
本発明によれば層間膜として用いる樹脂膜中にＳｉＯ成
分を含有せしめることによってその樹脂膜上にカバー膜
としてその内部応力が圧縮応力であり、その大きさが１
０ ’〜１０ ”ｄｙｎｅ／ ａｉであるプラズマ化学
気相成長シリコン窒化膜又は、プ ・ラズマ化学気相成
長シリコン酸化窒化膜又は、プラズマ化学気相成長シリ
コン窒化膜とプラズマ化学気相成長シリコン窒化膜との
２層膜を形成したときにクラックやしわが発生しない。According to the present invention, by incorporating a SiO component into a resin film used as an interlayer film, a cover film is formed on the resin film so that the internal stress is compressive stress, and the magnitude thereof is 1.
0' to 10'' dyne/ai plasma chemical vapor grown silicon nitride film or plasma chemical vapor grown silicon oxynitride film or plasma chemical vapor grown silicon nitride film and plasma chemical vapor grown silicon nitride film No cracks or wrinkles occur when a two-layer film is formed.
次に、本発明を実施例に基づき図面を用いて説明する。 Next, the present invention will be explained based on embodiments using drawings.
本実施例で用いた樹脂膜形成用塗布溶液は７ミノシリコ
ン化合物として
ＮＨｔ−ＯＳ ｉ （ＯＣＨｓ） ＊
で表わされる。Ｐ−７ミノフエニルトリメトキシシラン
をジアミンとしてジアミノジフェニルエーテルを、また
、芳香族テトラカルボン酸二無水物として、ベンゾフェ
ノンテトラカルボン酸二無水物を用いＰ−７ミノフエニ
ルトリメトキシシランのモル濃度を４０％とした。また
溶媒としてジメチルアセトアミドを用い溶液の粘度を３
００ｃｍ−ｐｏｉｓｅとした。The coating solution for resin film formation used in this example is expressed as NHt-OS i (OCHs) * as a 7-minosilicon compound. Diaminodiphenyl ether was used as P-7 minophenyltrimethoxysilane as a diamine, and benzophenonetetracarboxylic dianhydride was used as the aromatic tetracarboxylic dianhydride, and the molar concentration of P-7 minophenyltrimethoxysilane was 40%. And so. In addition, using dimethylacetamide as a solvent, the viscosity of the solution was adjusted to 3.
00 cm-poise.
〔実施例１〕
本実施例では、シリコン基板上に本発明に基づく樹脂膜
を形成し、その樹脂膜上にプラズマ化学気相成長シリコ
ン窒化膜を形成し、クラック、しわが発生するかどうか
を調べた。なお比較としてＰ−７ミノフエニルトリメト
キシシランを含まないベンゾフェノンテトラカルボン酸
二無水物とジアミノジフェニルエーテルから成るポリイ
ミド樹脂膜を用いた。[Example 1] In this example, a resin film based on the present invention was formed on a silicon substrate, and a plasma chemical vapor deposition silicon nitride film was formed on the resin film to determine whether cracks and wrinkles would occur. Examined. For comparison, a polyimide resin film made of benzophenone tetracarboxylic dianhydride and diaminodiphenyl ether, which does not contain P-7 minophenyltrimethoxysilane, was used.
シリコン基板上に本発明に基づく樹脂膜と、ポリイミド
膜を同様な熱処理を加えることにより約１．５μｍの膜
厚で形成し、最終熱処理を３５０℃。A resin film based on the present invention and a polyimide film were formed on a silicon substrate to a thickness of about 1.5 μm by applying similar heat treatment, and the final heat treatment was performed at 350°C.
４００℃、４５０℃で１時間、窒素ガス雰囲気中で施し
その試料上にプラズマ化学気相成長でそのガス流量比を
変えることにより、その内部応力が圧縮応力でありその
大きさをｌＸｌ０”〜１ｘｌＯ１１′ｄｙｎｅ／ａｄの
間で変化させ、３００℃の温度で厚さ約１．０μｍのシ
リコン窒化膜を形成したときのクラック、しわの有無を
調べた結果を第１表に示す。By applying plasma chemical vapor deposition on the sample in a nitrogen gas atmosphere for 1 hour at 400°C and 450°C and changing the gas flow rate ratio, the internal stress is compressive stress and its magnitude can be determined from lXl0'' to 1xlO11. Table 1 shows the results of examining the presence or absence of cracks and wrinkles when a silicon nitride film with a thickness of about 1.0 μm was formed at a temperature of 300° C. by varying the dyne/ad.
同図から本発明による樹脂膜を用いた場合にはその最終
熱処理温度が３５０℃、４００℃、４５０℃でさらにシ
リコン窒化膜の内部応力がｌＸｌ０’〜Ｉ Ｘ １０
”ｄｙｎｅの間でクランク、しわは発生しなかった。し
かしながらポリイミド樹脂膜の場合には、クラックは発
生しなかったが、しわが発生した。From the same figure, when the resin film according to the present invention is used, the internal stress of the silicon nitride film is 1X10' to 10
"Cranks and wrinkles did not occur between the dyne. However, in the case of the polyimide resin film, no cracks occurred, but wrinkles did occur.
第１表
〔実施例２〕
第１図（ａ）〜（ｇ）は実施例により耐湿性強化された
２層Ａ［配線構造体を形成する場合の工程断面図である
。Table 1 [Example 2] Figures 1(a) to 1(g) are process cross-sectional views for forming a two-layer A wiring structure with enhanced moisture resistance according to the example.
第２図（ａ）において半導体素子能動部が形成さり、さ
らに化学気相成長によるリンガラス膜２０２を介したポ
リシリコン電極２０３，２０３’ が形成された素子基
板２０１０表面に化学気相成長によるリンガラス膜２０
４を形成し、公知のリソグラフィー、ドライエツチング
により同図（ｂ）に示すようにポリシリコン電極と第１
のアルミニウム配線との電気的導通なとるための第１の
開口２０５゜２０５′を設け、続いてスパッタ法により
厚さ約１μｍのアルミニウム膜を形成し、フォトリソグ
ラフィー、ドライエツチングにより同図（Ｃ）に示すよ
うに第１のアルミニウム配線２０６，２０６′を形成す
る。次に、同図（ｄ）に示すように、本発明による塗布
溶液を毎分２０００回転で３０秒間回転塗布し、１００
℃で１時間、２４０℃で３０分間さらに４００℃で１時
間窒素ガス雰囲気中で熱処理し、約１．５μｍ厚の樹脂
膜２０７を形成する。In FIG. 2(a), a semiconductor element active part is formed, and phosphorus is formed by chemical vapor deposition on the surface of an element substrate 2010 on which polysilicon electrodes 203, 203' are formed via a phosphorus glass film 202 by chemical vapor deposition. glass film 20
4, and by using known lithography and dry etching, as shown in FIG.
First openings 205° and 205' are formed to establish electrical continuity with the aluminum wiring, and then an aluminum film with a thickness of about 1 μm is formed by sputtering, and then photolithography and dry etching are performed to form the first openings 205° and 205' in the same figure (C). First aluminum interconnections 206 and 206' are formed as shown in FIG. Next, as shown in the same figure (d), the coating solution according to the present invention was spin-coated at 2000 revolutions per minute for 30 seconds.
C. for 1 hour, 240.degree. C. for 30 minutes, and 400.degree. C. for 1 hour in a nitrogen gas atmosphere to form a resin film 207 with a thickness of about 1.5 .mu.m.
続いて樹脂膜のエツチングマスクとして約０．１μｍの
チタン金属膜をスパッタ法により形成し、公知のフォト
リソグラフィー、ドライエツチングによりチタン金属膜
と樹脂膜をエツチング後、エツチングマスクとして用い
たチタン金属を除去することによって同図（ｅ）に示す
ように第１のアルミニウム配線２０６，２０８’と、第
２のアルミニウム配線との電気的導通をとるための第２
の開口２０８゜２０８′を設ける。次にスパッタ法によ
り厚さ約１μｍのアルミニウム膜を形成し、フォトリソ
グラフィー、ドライエツチングにより同図（「）に示す
ように第２のアルミニウム配線２０９，２０９’ を形
成することによって２層アルミニウム配線構造体が形成
される。Next, a titanium metal film with a thickness of about 0.1 μm was formed by sputtering as an etching mask for the resin film, and after etching the titanium metal film and the resin film by known photolithography and dry etching, the titanium metal used as an etching mask was removed. By doing so, as shown in FIG.
Openings 208° and 208' are provided. Next, an aluminum film with a thickness of approximately 1 μm is formed by sputtering, and second aluminum wirings 209 and 209' are formed by photolithography and dry etching as shown in the figure ( ), thereby creating a two-layer aluminum wiring structure. A body is formed.
次に、樹脂膜が吸収した水分を除去するために、４００
℃で１５分間、窒素ガス雰囲気中で熱処理後、同図（ｇ
）に示すようにただちにプラズマ化学気相成長により３
５０℃の温度で約１μｍの厚さでその内部応力が圧縮応
力であり、その大きさが３×１０°ｄｙｎｅ／ａａであ
るシリコン窒化膜２１０を形成後、フォトリソグラフィ
ー、ドライエツチングによりチップ外と電気的導通をと
るためのアルミニ、ラムパッド上のシリコン窒化膜を除
去する。Next, in order to remove the moisture absorbed by the resin film, 400
After heat treatment at ℃ for 15 minutes in a nitrogen gas atmosphere, the same figure (g
) immediately by plasma chemical vapor deposition as shown in 3.
After forming a silicon nitride film 210 with a thickness of about 1 μm at a temperature of 50° C., whose internal stress is compressive stress and whose magnitude is 3×10° dyne/aa, the outside of the chip is removed by photolithography and dry etching. Remove the silicon nitride film on the aluminum and ram pads for electrical continuity.
以上の工程により耐湿性強化された２層アルミニウム配
線構造体が形成される。Through the above steps, a two-layer aluminum wiring structure with enhanced moisture resistance is formed.
本実施例で形成した耐湿性強化された２層アルミニウム
配線構造体を１５０℃で２気圧の飽和水蒸気中で３００
時間の耐湿性試験を行ったところ、アルミニウム配線の
腐食は全くないものであった。The two-layer aluminum wiring structure with enhanced moisture resistance formed in this example was heated at 150°C and saturated steam at 2 atm for 300°C.
A moisture resistance test over time revealed no corrosion of the aluminum wiring.
カバー膜として、２ Ｘ １０ ’ｄｙｎｅ／ａａの圧
縮応力を有するシリコン酸化窒化膜を用いた場合、シリ
コン酸化窒化膜との２層膜を用いた場合にも同様な効果
が得られた。Similar effects were obtained when a silicon oxynitride film having a compressive stress of 2 x 10' dyne/aa was used as the cover film, and when a two-layer film with a silicon oxynitride film was used.
以上説明したように本発明に基づく樹脂膜はその樹脂膜
上にその内部応力が圧縮応力であり、その大きさが１０
”−１０”ｄｙｍｅ／ｒｙＡであるプラズマ化学気相
成長によるシリコン窒化膜、又はシリコン酸化窒化膜、
又はシリコン窒化膜とシリコン酸化窒化膜との２層膜を
形成してもクラック、しわが発生しないため耐湿信頼性
を向上できるという効果がある。したがって、本発明に
よって得らｈる耐湿性強化された樹脂間膜を用いた多層
配線構造体は、高耐湿性、高信頼性を要求される半導体
装置に多大な効果をもたらす。As explained above, in the resin film based on the present invention, the internal stress on the resin film is compressive stress, and its magnitude is 10
"-10" dyme/ryA silicon nitride film or silicon oxynitride film by plasma chemical vapor deposition,
Alternatively, even if a two-layer film of a silicon nitride film and a silicon oxynitride film is formed, cracks and wrinkles do not occur, so there is an effect that the moisture resistance reliability can be improved. Therefore, the multilayer wiring structure using the resin interlayer film with enhanced moisture resistance obtained by the present invention brings great effects to semiconductor devices that require high moisture resistance and high reliability.
第１図（ａ）〜（ｇ）は本発明の他の実施例に基づく耐
湿性の強化された２層アルミニウム配線構造体を形成す
る場合の工程断面図である。
２０１・・・・・・素子基板、２０２・・・・・・リン
ガラス膜、２０３．２０３’・・・・・・ポリシリコン
電極、２０４・・・・・・リンガラス膜、２０５，２０
５’・・・・・・第１の開口、２０６，２０６’・・・
・・・第１のアルミニウム配線、２０７・・・・・・本
発明に基づく樹脂膜、２０８゜２０８′・・・・・・第
２の開口、・２０９，２０９’・・・・・・第２のアル
ミニウム配線、２１０・・・・・・シリコン窒化膜。
代理人 弁理士 内 原 音FIGS. 1(a) to 1(g) are cross-sectional views showing the process of forming a two-layer aluminum wiring structure with enhanced moisture resistance according to another embodiment of the present invention. 201...Element substrate, 202...Phosphorus glass film, 203.203'...Polysilicon electrode, 204...Phosphorus glass film, 205,20
5'...First opening, 206, 206'...
...First aluminum wiring, 207...Resin film based on the present invention, 208°208'...Second opening, 209, 209'...No. 2 aluminum wiring, 210...silicon nitride film. Agent Patent Attorney Oto Uchihara
Claims (2)
芳香族テトラカルボン酸二無水物と、式（２）で表わさ
れるジアミンと、式（３）で表わされるアミノシリコン
化合物とを混合反応せしめることによって形成されるポ
リアミド酸シリコン型中間体を含有してなる溶液を塗布
・熱処理せしめることによって形成され、続いて、該層
間絶縁樹脂膜上に最終金属配線を形成後、３００〜４５
０℃の温度で熱処理をし、プラズマ化学気相成長シリコ
ン窒化膜又は、プラズマ化学気相成長シリコン酸化窒化
膜又は、プラズマ化学気相成長シリコン酸化窒化膜と、
プラズマ化学気相成長シリコン窒化膜との、２層膜によ
るカバー膜を形成することを特徴とする耐湿性強化され
た樹脂層間膜を用いた多層配線構造体の製造方法 ▲数式、化学式、表等があります▼ （式（１）〜（３）において、Ｒ＾１は４価の炭素環式
芳香族基を表わし、Ｒ＾２は炭素数６〜３０個の芳香族
基、又は炭素数６〜３０個の炭素環式芳香族基、Ｒ＾３
及びＲ＾４は独立に炭素数１〜６のアルキル基、又はフ
ェニル基であり、Ｋは１≦Ｋ≦３の値である。）(1) The interlayer insulating resin film contains an aromatic tetracarboxylic dianhydride represented by the following formula (1), a diamine represented by the formula (2), and an amino silicon compound represented by the formula (3). It is formed by applying and heat-treating a solution containing a polyamic acid silicon type intermediate formed by a mixed reaction, and then, after forming the final metal wiring on the interlayer insulating resin film,
Heat-treated at a temperature of 0° C. to form a plasma chemical vapor deposition silicon nitride film, a plasma chemical vapor deposition silicon oxynitride film, or a plasma chemical vapor deposition silicon oxynitride film;
Method for manufacturing a multilayer wiring structure using a resin interlayer film with enhanced moisture resistance, characterized by forming a two-layer cover film with a plasma chemical vapor deposition silicon nitride film ▲Mathematical formulas, chemical formulas, tables, etc. ▼ (In formulas (1) to (3), R^1 represents a tetravalent carbocyclic aromatic group, and R^2 represents an aromatic group having 6 to 30 carbon atoms, or an aromatic group having 6 to 30 carbon atoms. 30 carbocyclic aromatic groups, R^3
and R^4 are independently an alkyl group having 1 to 6 carbon atoms or a phenyl group, and K has a value of 1≦K≦3. )
多層配線構造体の製造方法において、前記該多層配線構
造体上に形成せしめるプラズマ化学気相成長シリコン窒
化膜、又はプラズマ化学気相成長シリコン酸化窒化膜は
その内部応力が圧縮応力でありその大きさが１０＾■〜
１０＾■ｄｙｎｅ／ｃｍ＾２であることを特徴とする樹
脂層間膜を用いた多層配線構造体の製造方法。(2) In the method for manufacturing a multilayer wiring structure using a resin interlayer film according to claim 1, a plasma chemical vapor deposition silicon nitride film or a plasma chemical vapor deposition silicon nitride film formed on the multilayer wiring structure is provided. The internal stress of the phase-grown silicon oxynitride film is compressive stress, and its magnitude is 10^■~
A method for manufacturing a multilayer wiring structure using a resin interlayer film, characterized in that the dyne/cm^2 is 10^■dyne/cm^2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63052133A JP2743366B2 (en) | 1988-03-04 | 1988-03-04 | Method for manufacturing multilayer wiring structure using resin interlayer film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63052133A JP2743366B2 (en) | 1988-03-04 | 1988-03-04 | Method for manufacturing multilayer wiring structure using resin interlayer film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01225339A true JPH01225339A (en) | 1989-09-08 |
| JP2743366B2 JP2743366B2 (en) | 1998-04-22 |
Family
ID=12906370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63052133A Expired - Fee Related JP2743366B2 (en) | 1988-03-04 | 1988-03-04 | Method for manufacturing multilayer wiring structure using resin interlayer film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2743366B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555386A (en) * | 1991-08-23 | 1993-03-05 | Nec Corp | Manufacture of semiconductor device |
| JPH0590426A (en) * | 1991-09-27 | 1993-04-09 | Nec Corp | Manufacture of semiconductor device |
| JP2014089992A (en) * | 2012-10-29 | 2014-05-15 | Sumitomo Electric Device Innovations Inc | Semiconductor device and method for manufacturing the same |
| US9640429B2 (en) | 2012-10-29 | 2017-05-02 | Sumitomo Electric Device Innovations, Inc. | Method of fabricating semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5779648A (en) * | 1980-11-05 | 1982-05-18 | Sanyo Electric Co Ltd | Multilayer wiring of semiconductor device |
| JPS62261149A (en) * | 1986-05-08 | 1987-11-13 | Nec Corp | Manufacture of semiconductor device |
-
1988
- 1988-03-04 JP JP63052133A patent/JP2743366B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5779648A (en) * | 1980-11-05 | 1982-05-18 | Sanyo Electric Co Ltd | Multilayer wiring of semiconductor device |
| JPS62261149A (en) * | 1986-05-08 | 1987-11-13 | Nec Corp | Manufacture of semiconductor device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0555386A (en) * | 1991-08-23 | 1993-03-05 | Nec Corp | Manufacture of semiconductor device |
| JPH0590426A (en) * | 1991-09-27 | 1993-04-09 | Nec Corp | Manufacture of semiconductor device |
| JP2014089992A (en) * | 2012-10-29 | 2014-05-15 | Sumitomo Electric Device Innovations Inc | Semiconductor device and method for manufacturing the same |
| US9640429B2 (en) | 2012-10-29 | 2017-05-02 | Sumitomo Electric Device Innovations, Inc. | Method of fabricating semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2743366B2 (en) | 1998-04-22 |
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