JPH0380541A - Formation of surface protective film of semiconductor device - Google Patents
Formation of surface protective film of semiconductor deviceInfo
- Publication number
- JPH0380541A JPH0380541A JP21793189A JP21793189A JPH0380541A JP H0380541 A JPH0380541 A JP H0380541A JP 21793189 A JP21793189 A JP 21793189A JP 21793189 A JP21793189 A JP 21793189A JP H0380541 A JPH0380541 A JP H0380541A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- fluororesin
- formulas
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 230000001681 protective effect Effects 0.000 title claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 34
- 229920001721 polyimide Polymers 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229920001577 copolymer Polymers 0.000 claims abstract description 8
- 238000001020 plasma etching Methods 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000006185 dispersion Substances 0.000 claims abstract description 5
- 239000010419 fine particle Substances 0.000 claims abstract description 5
- 238000004528 spin coating Methods 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims description 17
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 150000003377 silicon compounds Chemical class 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 4
- 150000004985 diamines Chemical class 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 239000002033 PVDF binder Substances 0.000 claims description 2
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- 229920005575 poly(amic acid) Polymers 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 2
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 2
- OBFQBDOLCADBTP-UHFFFAOYSA-N aminosilicon Chemical compound [Si]N OBFQBDOLCADBTP-UHFFFAOYSA-N 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 17
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の表面保護膜の形成方法に関し、
特に弗素樹脂膜を表面保護膜として用いる方法に関する
。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for forming a surface protective film of a semiconductor device,
In particular, the present invention relates to a method of using a fluororesin film as a surface protective film.
従来、この種の表面保護膜の形成方法としては、シリコ
ン窒化膜、又は、シリコン酸化窒化膜をプラズマ化学気
相成長法によって形成する方法がある。すなわち、第３
図に示すように多層配線の最終配線層３０２が形成され
た基板３０１上にプラズマ化学気相成長法により、シリ
コン窒化膜、又は、シリコン酸化窒化膜３０３を形成し
、保護膜としていた。Conventionally, as a method for forming this type of surface protection film, there is a method of forming a silicon nitride film or a silicon oxynitride film by plasma chemical vapor deposition. That is, the third
As shown in the figure, a silicon nitride film or a silicon oxynitride film 303 was formed as a protective film by plasma chemical vapor deposition on a substrate 301 on which a final wiring layer 302 of a multilayer wiring was formed.
しかしながら、一般にプラズマ化学気相成長法によって
形成したシリコン窒化膜又は、シリコン酸化窒化膜は、
下地の形状を反映しやすいことから、これらの膜を凹凸
の大きい多層配線構造体の表面に形成した後の表面は凹
凸が大きく、これらを樹脂封止形のパッケージに組み込
んで用いる場合、熱機械的な特性が劣化してしまう。す
なわち、動作環境の温度変化が著しい場合には、封止樹
脂の熱膨張により半導体チップ表面に熱応力が加わり、
保護膜又は、層間絶縁膜に亀裂が発生し、耐湿信頼性が
著しく劣化したり、あるいは保護膜よりも下層の配線の
形状が変化する等の問題が起こり、半導体装置の信頼性
が著しく劣化するという欠点がある。However, in general, silicon nitride films or silicon oxynitride films formed by plasma chemical vapor deposition method are
Because these films tend to reflect the shape of the underlying layer, the surface after forming these films on the surface of a multilayer wiring structure with large irregularities is highly uneven, and when these films are incorporated into a resin-sealed package and used, thermomechanical characteristics will deteriorate. In other words, when there is a significant temperature change in the operating environment, thermal stress is applied to the semiconductor chip surface due to the thermal expansion of the sealing resin.
Cracks occur in the protective film or interlayer insulating film, causing problems such as a significant deterioration in moisture resistance reliability, or changes in the shape of the wiring below the protective film, resulting in a significant deterioration in the reliability of the semiconductor device. There is a drawback.
上述した従来の表面保護膜の形成方法に対し、本発明に
おいては、弗素樹脂のデスパージ３ンをスピンコード法
、又は、デイツプ法により塗布し、熱処理、溶融せしめ
て形成した弗素樹脂膜を表面保護膜として用いることに
よって半導体装置の信頼性を著しく向上せしめる。In contrast to the above-described conventional method for forming a surface protective film, in the present invention, a fluororesin despurdine is applied by a spin code method or a dip method, and then heat-treated and melted to form a fluororesin film for surface protection. By using it as a film, the reliability of semiconductor devices can be significantly improved.
本発明の半導体装置の表面保護膜の形成方法は、多層配
線構造体が形成された半導体基板上に、シリコン化合物
を含有するポリイミド膜を形成する工程と、続いて弗素
樹脂膜を形成する工程と、ＣＦ４等の弗素系ガス、又は
０２ガスを用いる反応性イオンエツチングにより該弗素
樹脂膜表面を改質せしめる工程と、続いて、フォトレジ
スト膜を形成する工程と、フォトリソグラフィー技術に
より、バターニングせしめる工程と、公知のドライエツ
チング技術により、ボンディングパッド上部の前記シリ
コン化合物を含有するポリイミド膜及び弗素樹脂膜を選
択的にエツチング除去せしめる工程とを含むことを特徴
とする。A method for forming a surface protection film for a semiconductor device according to the present invention includes a step of forming a polyimide film containing a silicon compound on a semiconductor substrate on which a multilayer wiring structure is formed, and a step of subsequently forming a fluororesin film. , a step of modifying the surface of the fluororesin film by reactive ion etching using fluorine-based gas such as CF4, or 02 gas, followed by a step of forming a photoresist film, and patterning by photolithography technology. and a step of selectively etching away the silicon compound-containing polyimide film and fluororesin film above the bonding pad using a known dry etching technique.
さらに、上記のシリコン化合物を含有するポリイミド膜
は、下記の式（１）で表わされる芳香族テトラカルボン
酸二無水物と、式（２）で表わされるジアミンと、式（
３）で表わされるアミノシリコン化合物とを混合反応せ
しめることによって形成されるポリアミック酸シリコン
型中間体を含有してなる溶液を塗布・熱処理せしめるこ
とによって形成されることを特徴とする。Furthermore, the polyimide film containing the silicon compound described above contains an aromatic tetracarboxylic dianhydride represented by the following formula (1), a diamine represented by the formula (2), and a diamine represented by the formula (
It is characterized in that it is formed by applying and heat-treating a solution containing a polyamic acid silicon type intermediate formed by a mixed reaction with an aminosilicon compound represented by 3).
ＮＨ２−Ｒ２−ＮＲ２（２）
Ｎ Ｈ２（（さＳｉ・Ｒ３−え（ＯＲ３）、（３）（式
（１）〜（３）において、Ｒ′は４価の炭素環式芳香族
基を表わし、Ｒ２は炭素数６〜３０個の芳香族基、又は
炭素数６〜３０個の炭素環式芳香族基、Ｒ３及びＲ４は
独立に炭素数１〜６のアルキル基、又はフェニル基であ
り、Ｋは、１≦に≦３の整数である。）
さらに、上記の弗素樹脂膜はポリテトラフルオロエチレ
ン（化学式＋ＣＦ２テｍ、ｍ：整数）又は、テトラフル
オロエチレン−パーフルオロアルキルビニルエーテル共
重合体（化学式（ＣＦ ２ ＬへＣＦ ＯＲ’ｆ −。NH2-R2-NR2(2) NH2((Si・R3-e(OR3), (3) (In formulas (1) to (3), R' represents a tetravalent carbocyclic aromatic group; , R2 is an aromatic group having 6 to 30 carbon atoms or a carbocyclic aromatic group having 6 to 30 carbon atoms, R3 and R4 are independently an alkyl group having 1 to 6 carbon atoms, or a phenyl group, K is an integer of 1≦≦3.) Furthermore, the above fluororesin film is made of polytetrafluoroethylene (chemical formula + CF2tem, m: integer) or tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer ( Chemical formula (CF 2 L to CF OR'f -.
ｍ、ｎ：正の整数、Ｒ：アルキル基）、又は、テトラフ
ルオロエチレン−ヘキサフルオロプロピレン共重合体（
化学式（ＣＦ ｚ□ ＣＦ ＣＦ ３）０ｍ ｒｎ：
正の整数）、又は、テトラフルオロエチレン−エチレン
共重合体（化学式（ＣＦ２ｈ→ＣＲ２）−１１ｍ。m, n: positive integer, R: alkyl group), or tetrafluoroethylene-hexafluoropropylene copolymer (
Chemical formula (CF z□ CF CF 3)0m rn:
positive integer) or tetrafluoroethylene-ethylene copolymer (chemical formula (CF2h→CR2)-11m.
ｎ：正の整数）、又は、ポリビニリデンフルオライド（
化学式’４ＣＦ２−ＣＨ２＋ｍ、ｍ：正の整数）等の微
粒子、又は、これらのうちの２つ以上を、純水、又は、
トルエン２メタノール等の有ｉ溶剤中に分散せしめたも
の、いわゆるディスバージョンをスピンコード法、デイ
ツプ法等により塗布し３００〜４００℃の温度で熱処理
、溶融することによって形成した膜であることを特徴と
する。n: positive integer) or polyvinylidene fluoride (
Fine particles having the chemical formula '4CF2-CH2+m, m: a positive integer), or two or more of these, are mixed with pure water, or
It is characterized by being a film formed by applying a so-called disversion, which is dispersed in a solvent such as toluene and methanol, by a spin code method, a dip method, etc., and then heat-treating and melting it at a temperature of 300 to 400 degrees Celsius. shall be.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図（ａ）〜（ｆ）は本発明の第１の実施例である表
面保護膜の形成方法を示す工程断面図である。FIGS. 1(a) to 1(f) are process cross-sectional views showing a method for forming a surface protective film according to a first embodiment of the present invention.
第１図（ａ）に示すように、アルミニウム１１配線構造
体の最上層配線１０２．アルミニウムパッド１０３が形
成された半導体基板１０１上に、同図（ｂ）に示すよう
にスピンコード法により、本発明に基づくシリコン含有
ポリイミド膜形成塗布溶液を回転塗布し、１５０℃で３
０分間、窒素ガス雰囲気のオーブン内で熱処理し、厚さ
約０．２μｍのシリコン含有ポリイミド膜１０４を形成
する。As shown in FIG. 1(a), the uppermost layer wiring 102. of the aluminum 11 wiring structure. On the semiconductor substrate 101 on which the aluminum pad 103 is formed, the silicon-containing polyimide film forming coating solution based on the present invention is spin-coated by a spin code method as shown in FIG.
A heat treatment is performed in an oven in a nitrogen gas atmosphere for 0 minutes to form a silicon-containing polyimide film 104 with a thickness of about 0.2 μm.
続いて同図（Ｃ）に示すようにテトラフルオロエチレン
−パーフルオロアルキルビニルエーテル共重合体から成
る直径０，１〜０．５μｍの微粒−子を純水中に分散せ
しめたディスバージョンをスピンコード法により回転塗
布し、８０℃で１０分間窒素ガス雰囲気のオーブン中で
熱処理し水分を飛散せしめる。この後、３８０℃で１０
分間、窒素雰囲気の電気炉内で熱処理・溶融し、厚さ約
２μｍの弗素樹脂膜１０５を形成する。次に形成した弗
素樹脂膜表面をＣＦ ＜ガスを用いる反応性イオンエツ
チングによりガス流、ｔ ３０ Ｓ ＣＣＭ、圧力５Ｐ
ａ、高周波電力３００Ｗなる条件で５分間エツチングす
ることによって改質した後、同図（ｄ）に示すように公
知のフォトリソグラフィー技術を用いてパターニングさ
れたフォトレジスト膜ｌＯ６を形成する。この後、同図
（ｅ）に示すようにＣＦ、ガスとｏ２ガスとをその流量
をそれぞれ５ＳＣＣＭ。Next, as shown in the same figure (C), dispersion in which fine particles of 0.1 to 0.5 μm in diameter made of tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer were dispersed in pure water was performed using a spin code method. The coating was spin-coated using the method described above, and heat treated in an oven under a nitrogen gas atmosphere at 80° C. for 10 minutes to evaporate moisture. After this, at 380℃ for 10
Heat treatment and melting are performed in an electric furnace in a nitrogen atmosphere for a minute to form a fluororesin film 105 with a thickness of approximately 2 μm. Next, the surface of the formed fluororesin film was etched by reactive ion etching using CF<gas, gas flow, t 30 S CCM, pressure 5P.
a. After modification by etching for 5 minutes at a high frequency power of 300 W, a photoresist film 1O6 is formed which is patterned using a known photolithography technique, as shown in FIG. 4(d). After this, as shown in the same figure (e), CF, gas, and O2 gas were each supplied at a flow rate of 5 SCCM.
３０ＳＣＣＭとしてこれらを混合し、圧力１０Ｐａ、高
周波電力３００Ｗなる条件の反応性イオンエツチングに
よりアルミニウムパッド上の弗素樹脂膜及びシリコン含
有ポリイミド膜を除去する。These are mixed as 30 SCCM, and the fluororesin film and silicon-containing polyimide film on the aluminum pad are removed by reactive ion etching under the conditions of a pressure of 10 Pa and a high frequency power of 300 W.
最後に、フォトレジスト膜を除去することによって同図
（「）に示すように、表面保護膜の形成は終了する。Finally, by removing the photoresist film, the formation of the surface protective film is completed, as shown in FIG.
以上の工程で形成した弗素樹脂保護膜を有するアルミニ
ウム配線構造体を１２５℃、２気圧の飽和水蒸気中で１
０００時間の高温・高湿試験を行ったところ、プラズマ
化学気相成長シリコン窒化膜を表面保護膜として用いた
場合と同様、アルミニウム配線の腐食は全く認められな
かった。The aluminum wiring structure with the fluororesin protective film formed in the above steps was heated in saturated steam at 125°C and 2 atm.
When a high temperature and high humidity test was conducted for 1,000 hours, no corrosion of the aluminum wiring was observed, as was the case when a plasma chemical vapor deposition silicon nitride film was used as a surface protective film.
次に本発明をＭＯ８型半導体装置に適用した例を示す。Next, an example in which the present invention is applied to an MO8 type semiconductor device will be shown.
第２図（ａ）〜（ｆ）は、本発明の第２の実施例のＭＯ
３型半導体装置の製造方法を示す工程断面図である。FIGS. 2(a) to 2(f) show the MO of the second embodiment of the present invention.
FIG. 3 is a process cross-sectional view showing a method for manufacturing a type 3 semiconductor device.
第２図（ａ）に示すように、素子分離領域２０２゜２０
２’、ゲート酸化膜２０３、ポリシリコンゲート２０４
、ソース領域２０５、ドレイン領域２０６からなるＭＯ
８型トランジスタが形成された半導体基板２０１上に同
図（ｂ）に示すように厚さ約０．８μｍの層間綿Ｒ膜２
０７を形成し、公知のフォトエツチング技術を用いて第
１の開孔２０８゜２０８′を形成する。続いて同図（ｃ
）に示すようにバリ７メタルとして厚さ約０．１μｍの
チタン含有タングステン膜２０９、厚さ約０．６μｍの
珪素含有アルミニウム膜２１０を連続してチタン法によ
り形成し、同図（ｄ）に示すように公知のフォトエツチ
ング技術を用いてアルミニウム配線２１１を形成し、同
時にアルミニウムパッド２１２を形成する。この後、第
１の実施例と同様な工程により同図（ｅ）に示すように
シリコン含有ポリイミド膜２１３．弗素樹脂膜２１４を
順次形成し、表面改質、フォトリソグラフィー、反応性
イオンエツチングにより同図（ｆ）に示すようにアルミ
ニウムパッド２１２上に第２の開孔２１５を形成し、フ
ォトレジスト膜を除去する。As shown in FIG. 2(a), the element isolation region 202°20
2', gate oxide film 203, polysilicon gate 204
, a source region 205, and a drain region 206.
As shown in the same figure (b), an interlayer cotton R film 2 with a thickness of about 0.8 μm is formed on a semiconductor substrate 201 on which an 8-type transistor is formed.
07 is formed, and first openings 208° and 208' are formed using a known photoetching technique. Next, the same figure (c
), a titanium-containing tungsten film 209 with a thickness of about 0.1 μm and a silicon-containing aluminum film 210 with a thickness of about 0.6 μm were successively formed by the titanium method as a burr 7 metal, and as shown in FIG. As shown, an aluminum wiring 211 is formed using a known photoetching technique, and at the same time an aluminum pad 212 is formed. Thereafter, a silicon-containing polyimide film 213 is formed by the same process as in the first embodiment as shown in FIG. A fluororesin film 214 is sequentially formed, and a second opening 215 is formed on the aluminum pad 212 by surface modification, photolithography, and reactive ion etching as shown in FIG. 3(f), and the photoresist film is removed. do.
以上の工程によって形成したＭＯ８型半導体装置におい
て、ＭＯ８型トランジスタの特性を調べたところ、プラ
ズマ化学気相成長法によって形成したシリコン窒化膜を
表面保護膜として用いた場合と同等な特性であった。In the MO8 type semiconductor device formed by the above steps, the characteristics of the MO8 type transistor were investigated and the characteristics were equivalent to those when a silicon nitride film formed by plasma chemical vapor deposition was used as a surface protective film.
さらに、上記のＭＯ８型半導体装置を樹脂封止型のパッ
ケージに組立て、長期信頼性評価を行ったところ、実用
上問題がないものであった。Furthermore, when the MO8 type semiconductor device described above was assembled into a resin-sealed package and a long-term reliability evaluation was performed, it was found that there were no problems in practical use.
以上述べた２つの実施例では、ディスバージョンとして
テトラフルオロエチレン−パーフルオロアルキルビニル
エーテル共重合体の微粒子を純水中に分散させたものを
用いたが、この微粒子として、ポリテトラフルオロエチ
レン、テトラフルオロエチレン−ヘキサフルオロプロピ
レン共重合体、テトラフルオロエチレン−エチレン共重
合体等、又はこれらのうちの２つ以上の混合物を用いる
ことができる。また、純水の替わりにトルエン、メタノ
ール等の有機溶剤を用いることができる。In the two examples described above, fine particles of a tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer dispersed in pure water were used as the dispersion. Ethylene-hexafluoropropylene copolymer, tetrafluoroethylene-ethylene copolymer, etc., or a mixture of two or more of these can be used. Furthermore, an organic solvent such as toluene or methanol can be used instead of pure water.
さらに、シリコン含有ポリイミド膜と弗素樹脂膜の膜厚
、及び熱処理条件、エツチング条件等は状況に応じて変
えることができる。Further, the film thicknesses of the silicon-containing polyimide film and the fluororesin film, heat treatment conditions, etching conditions, etc. can be changed depending on the situation.
以上説明したように本発明は、スピンコード法により塗
布し、熱処理・溶融して形成した弗素樹脂膜を表面保護
膜として用いることから、平坦な表面が得られること、
弗素樹脂膜表面の摩擦係数が小さいこと等の性質を有す
るようになる。したがって、樹脂封止型のパッケージに
組込んだときには、外部から熱応力が加わっても保護膜
又は層間絶縁膜に亀裂が発生することがなく、また、ア
ルミニウム配線の変形を防ぐことが可能となる。As explained above, the present invention uses a fluororesin film coated by a spin code method and formed by heat treatment and melting as a surface protective film, so that a flat surface can be obtained.
The surface of the fluororesin film has properties such as a small coefficient of friction. Therefore, when incorporated into a resin-sealed package, cracks will not occur in the protective film or interlayer insulation film even if thermal stress is applied from the outside, and deformation of the aluminum wiring can be prevented. .
さらに、下地多層配線構造体と弗素樹脂膜との間にこれ
らとの接着性に優れたシリコン含有ポリイミド膜を介在
させることにより弗素樹脂膜が多層配線構造体から剥離
することを防ぐ効果を有している。Furthermore, by interposing a silicon-containing polyimide film with excellent adhesion between the underlying multilayer wiring structure and the fluororesin film, it has the effect of preventing the fluororesin film from peeling off from the multilayer wiring structure. ing.
以上のことから本発明は、特に半導体装置の耐湿信頼性
の向上に多大な効果をもたらす。From the above, the present invention brings about a great effect, especially in improving the moisture resistance reliability of semiconductor devices.
第１図（ａ）〜（ｆ）は、本発明の第１の実施例である
表面保護膜の形成方法を示す工程断面図である。
同図において、１０１．・・・・・・半導体基板、１０
２・・・・・・最上層配線、１０３・・・・・・アルミ
ニウムパッド、１０４・・・・・・シリコン含有ポリイ
ミド膜、１０５・・・・・・弗素樹脂膜、１０６・・・
・・・フォトレジストである。
第２図（ａ）〜（「）は、本発明の第２の実施例である
ＭＯ８型半導体装置の製造方法を示す工程断面図である
。
同図において、２０１・・・・・・半導体基板、２０２
゜２０２′・・・・・・素子分離領域、２０３・・・・
・・ゲート酸化膜、２０４・・・・・・ポリシリコンゲ
ート、２０５・・・・・・ソース領域、２０６・・・・
・・ドレイン領域、２０７・・・・・・層間絶縁膜、２
０８，２０８’・・・・・・第１の開孔、２０９・・・
・・・チタン含有タングステン膜、２１０・・・・・・
珪素含有アルミニウム膜、２１１・・・・・・アルミニ
ウム配Ｌ２１２・・・・・・アルミニウムパラ）’、２
１３・・・・・・シリコン含有ポリイミド膜、２１４・
・・・・・弗素樹脂膜、２１５・・・・・・第２の開孔
である。
第３図はプラズマ化学気相成長法で形成した表面保護膜
を用いた従来の半導体装置の構造を示す断面図である。
同図において、３０１・・・・・・基板、３０２・・・
・・・最終配線層、３０３・・・・・・表面保護膜であ
る。FIGS. 1(a) to 1(f) are process cross-sectional views showing a method for forming a surface protective film according to a first embodiment of the present invention. In the figure, 101. ... Semiconductor substrate, 10
2...Top layer wiring, 103...Aluminum pad, 104...Silicon-containing polyimide film, 105...Fluororesin film, 106...
...It is a photoresist. FIGS. 2(a) to 2(a) are process cross-sectional views showing a method for manufacturing an MO8 type semiconductor device according to a second embodiment of the present invention. In the same figure, 201... semiconductor substrates are shown. , 202
゜202'...Element isolation region, 203...
... Gate oxide film, 204 ... Polysilicon gate, 205 ... Source region, 206 ...
...Drain region, 207...Interlayer insulating film, 2
08,208'...First opening, 209...
...Titanium-containing tungsten film, 210...
Silicon-containing aluminum film, 211... Aluminum interconnect L212... Aluminum para)', 2
13... Silicon-containing polyimide film, 214.
...Fluororesin membrane, 215...Second opening. FIG. 3 is a cross-sectional view showing the structure of a conventional semiconductor device using a surface protective film formed by plasma chemical vapor deposition. In the figure, 301...substrate, 302...
. . . Final wiring layer, 303 . . . Surface protective film.
Claims (4)
ミド膜を形成する工程と、続いて、弗素樹脂膜を形成す
る工程と、該弗素樹脂膜表面を改質せしめる工程と、続
いてフォトレジスト膜を形成する工程と、該フォトレジ
スト膜をパターニングせしめる工程と、前記フォトレジ
スト膜をマスクとして前記シリコン化合物を含有するポ
リイミド膜及び前記弗素樹脂膜を選択的に除去せしめる
工程とを含むことを特徴とする半導体装置の表面保護膜
の形成方法(1) A step of forming a polyimide film containing a silicon compound on a semiconductor substrate, followed by a step of forming a fluororesin film, a step of modifying the surface of the fluororesin film, and then a step of forming a photoresist film. a step of patterning the photoresist film; and a step of selectively removing the silicon compound-containing polyimide film and the fluororesin film using the photoresist film as a mask. Method for forming surface protective film of semiconductor device
リコン化合物を含有するポリイミド膜を形成する工程と
、続いて弗素樹脂膜を形成する工程と、ＣＦ＿４等の弗
素系ガス、又はＯ＿２ガスを用いる反応性イオンエッチ
ングにより該弗素樹脂膜表面を改質せしめる工程と、続
いて、フォトレジスト膜を形成する工程と、フォトリソ
グラフィー技術により、パターニングせしめる工程と、
ドライエッチング技術により、ボンディングパッド上部
の前記シリコン化合物を含有するポリイミド膜及び弗素
樹脂膜を選択的にエッチング除去せしめる工程とを含む
ことを特徴とする半導体装置の表面保護膜の形成方法(2) A step of forming a polyimide film containing a silicon compound on a semiconductor substrate on which a multilayer wiring structure is formed, followed by a step of forming a fluororesin film, and a fluorine-based gas such as CF_4 or O_2 gas a step of modifying the surface of the fluororesin film by reactive ion etching using a method; a step of forming a photoresist film; and a step of patterning it by photolithography.
A method for forming a surface protective film for a semiconductor device, comprising the step of selectively etching away the silicon compound-containing polyimide film and fluororesin film above the bonding pad using dry etching technology.
下記の式（１）で表わされる芳香族テトラカルボン酸二
無水物と、式（２）で表わされるジアミンと、式（３）
で表わされるアミノシリコン化合物とを混合反応せしめ
ることによって形成されるポリアミック酸シリコン型中
間体を含有してなる溶液を塗布・熱処理せしめることに
よって形成されることを特徴とする請求項２に記載の半
導体装置の表面保護膜の形成方法 ▲数式、化学式、表等があります▼（１） ＮＨ＿２−Ｒ＾２−ＮＨ＿２（２） ▲数式、化学式、表等があります▼（３） （式（１）〜（３）において、Ｒ＾１は４価の炭素環式
芳香族基を表わし、Ｒ＾２は炭素数６〜３０個の芳香族
基、又は炭素数６〜３０個の炭素環式芳香族基、Ｒ＾３
及びＲ＾４は独立に炭素数１〜６のアルキル基、又はフ
ェニル基であり、Ｋは、１≦Ｋ≦３の整数である。）(3) The polyimide film containing the silicon compound is
An aromatic tetracarboxylic dianhydride represented by the following formula (1), a diamine represented by the formula (2), and the formula (3)
The semiconductor according to claim 2, characterized in that the semiconductor is formed by applying and heat-treating a solution containing a polyamic acid silicon type intermediate formed by a mixed reaction with an amino silicon compound represented by How to form a protective film on the surface of equipment ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (1) NH_2-R^2-NH_2 (2) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ (3) (Formula (1) ~ In (3), R^1 represents a tetravalent carbocyclic aromatic group, and R^2 is an aromatic group having 6 to 30 carbon atoms, or a carbocyclic aromatic group having 6 to 30 carbon atoms. , R^3
and R^4 are independently an alkyl group having 1 to 6 carbon atoms or a phenyl group, and K is an integer of 1≦K≦3. )
化学式▲数式、化学式、表等があります▼、ｍ：正の整
数）又は、テトラフルオロエチレン−パーフルオロアル
キルビニルエーテル共重合体（化学式▲数式、化学式、
表等があります▼、ｍ、ｎ： 正の整数、Ｒ：アルキル基）、又は、テトラフルオロエ
チレン−ヘキサフルオロプロピレン共重合体（化学式▲
数式、化学式、表等があります▼、ｍ、ｎ： 正の整数）、又は、テトラフルオロエチレン−エチレン
共重合体（化学式▲数式、化学式、表等があります▼、
ｍ、ｎ： 正の整数）、又は、ポリビニリデンフルオライド（化学
式▲数式、化学式、表等があります▼、ｍ：正の整 数）等の微粒子、又は、これらのうちの２つ以上を、純
水、又は、トルエン、メタノール等の有機溶剤中に分散
せしめたもの、いわゆるディスパージョンをスピンコー
ト法、ディップ法等により塗布し３００〜４００℃の温
度で熱処理、溶融することによって形成した膜であるこ
とを特徴とする請求項２に記載の半導体装置の表面保護
膜の形成方法(4) The fluororesin film is polytetrafluoroethylene (
Chemical formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, m: positive integer) or tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (chemical formula ▲ mathematical formula, chemical formula,
There are tables, etc. ▼, m, n: positive integer, R: alkyl group), or tetrafluoroethylene-hexafluoropropylene copolymer (chemical formula ▲
There are mathematical formulas, chemical formulas, tables, etc. ▼, m, n: positive integers), or tetrafluoroethylene-ethylene copolymer (chemical formula ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼,
m, n: positive integer), or fine particles such as polyvinylidene fluoride (chemical formula ▲ There are numerical formulas, chemical formulas, tables, etc. ▼, m: positive integer), or two or more of these are purified. It is a film formed by applying a so-called dispersion, which is dispersed in water or an organic solvent such as toluene or methanol, by a spin coating method, a dipping method, etc., and then heat-treated and melted at a temperature of 300 to 400 degrees Celsius. The method for forming a surface protective film for a semiconductor device according to claim 2, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21793189A JPH0380541A (en) | 1989-08-23 | 1989-08-23 | Formation of surface protective film of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21793189A JPH0380541A (en) | 1989-08-23 | 1989-08-23 | Formation of surface protective film of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0380541A true JPH0380541A (en) | 1991-04-05 |
Family
ID=16711962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21793189A Pending JPH0380541A (en) | 1989-08-23 | 1989-08-23 | Formation of surface protective film of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0380541A (en) |
-
1989
- 1989-08-23 JP JP21793189A patent/JPH0380541A/en active Pending
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