JPH02270365A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor device, where an insulating board can be miniaturized, a coil and a manual soldering operation can be dispensed with, a production time can be shortened, component parts can be lessened in number and so on, by a method wherein a multilayered thick film conductor pattern is formed on an insulating board provided with a high frequency semiconductor element and others. CONSTITUTION:A multilayered thick film conductor pattern 6 is formed on an insulating board 7 provided with a high frequency semiconductor element and a capacitive element. For instance, the thick film conductor pattern 6 is formed on the upper side of the insulating board 7, the insulating board 7 is soldered to the upside of as copper plate 8 which serves also as a heat sink, and moreover the copper plate 8 functions as an earthing too. An over-glass is used as an insulator 10 which is employed as an interlaminar insulating layer when the thick film conductor pattern 6 is formed into a multilayered structure, and the over-glass is formed by repeating a process in which Ag-Pt alloy paste, for instance, is printed and sintered into a layer, and a glass coat is printed thereon and sintered again, and furthermore Ag-Pt alloy paste is printed thereon and sintered. When the thick film conductor pattern 6 is required to change in length, parts 6a and 6b shown in a figure are directly connected together.

Description

[Detailed description of the invention] [Industrial application field] This departure F! A is applied to high frequency thick film hybrid integrated circuits.

The present invention relates to a semiconductor device that is particularly effective for use in a high-frequency power amplification module in the V) IF band and UHIF band using a ceramic substrate.

[Conventional technology]

In recent years, many hybrid integrated circuit devices have been provided in which the power amplifying section of wireless communication devices is modularized, and the trend is towards further miniaturization. , This type of semiconductor device will be explained with reference to the drawings. Figure WJ8 shows a high-frequency power amplification module th in a conventional semiconductor device.
An equivalent circuit diagram is shown, in particular, only a matching circuit portion between semiconductor amplification elements is shown. In the figure, 111.
121 is a semiconductor amplification element s 131 e '41 +
For example, a multilayer ceramic capacitor is used as a +51 phase capacitance element. Reference numeral 161 denotes a microstrip line formed by printing and sintering a thick film conductor pattern forming a main line, for example, an Ay-pt gold alloy paste. The L component of the thick film conductor pattern (6) and the capacitance element 14 are connected between the semiconductor amplification elements I11 and 121.
A matching circuit is constructed by the O component of 1 t 151. An example of a concrete structure of the thick film conductor pattern (6) is shown in FIGS. 'FIG. 4 is a top view of a conventional semiconductor device, and FIG. 5 is a sectional view taken along Y and Y in FIG.

In the figure, the thick film conductor pattern (6) is formed on the upper surface of an insulating substrate (71), and the insulating substrate 17 is soldered to the upper surface of a steel plate (8) which also serves as a heat sink.
Also used as g+ri ground line.

(91c) A coil inserted when the area of the insulating substrate (1) is small and a sufficient length of the thick film conductor pattern (6) cannot be obtained, and both ends of the coil are soldered to the thick film conductor pattern (6). ing.

[Problem to be solved by the invention]

Conventional semiconductor devices are configured as described above, so
The thick-film conductor pattern occupies a large area, and manual soldering is required to insert the coil, resulting in problems such as a decrease in work efficiency.

This invention was made to solve the above-mentioned problems, and in addition to making the insulating board smaller, it also eliminates the need for a coil and eliminates manual soldering.
Reduced manufacturing time.

The purpose is to obtain a semiconductor device It that reduces the number of parts and improves reliability.

[Preparatory Means for Solving the Problems] The semiconductor device according to the present invention is a device in which a multilayered thick film conductor pattern is formed on an insulating substrate having a high frequency semiconductor element.

[Effect]

Since the semiconductor device according to the present invention has a multilayer thick film conductor pattern, the actual Gciii product does not increase as in the conventional case, and there is no need to use a coil.

〔Example〕

Hereinafter, one embodiment gAJ of the present invention will be explained with reference to the drawings.

wc1 figure is a top view of the semiconductor device, figure 8 is x of figure 1,
FIG.

In the figure, 16) to 18+ #i are the same as those shown in the conventional example of FIGS. 4 and 6, so the explanation will be omitted.

Is 1101 an insulating board+? Thick film conductor pattern formed on top surface of l+6111r When multilayering is performed, an insulator for insulating between each layer is used, for example, over glass. An example of this manufacturing method is to print and sinter a paste of AP-Pt i gold, completely print and sinter a glass coat on the top surface, and then print and sinter the kf-Pt alloy. It may be formed repeatedly.

Also, if you want to change the length of the thick film conductor pattern 1B), the thickness of the thick film conductor pattern 16) is about 10 μm, so parts (6a) and (6b) shown in FIG. 3 should be directly connected. obtained by.

〔Effect of the invention〕

As described above, according to the present invention, a semiconductor device is structured so that thick film conductor patterns are formed in multiple layers, so that the pattern area is reduced, leading to miniaturization of the module. 9. It has the effect of eliminating the need for a coil.

[Brief explanation of drawings]

FIG. 1 is a top view showing a semiconductor device according to an embodiment of the present invention. FIG. 8 is a sectional view taken along the lines X and X in FIG. 1, and FIG. 3 is an equivalent circuit diagram of a part of a conventional semiconductor device. , 4th
The figures are a top view showing a conventional semiconductor device, and a sectional view along Y and Y in FIG. 5 fl and FIG. 4. In the figure, 161 is a thick film conductor pattern (tta), (6
b) is a part, +71 ij insulating substrate, (8) steel plate, (1α is an insulator. In the figure, the same reference numeral indicates the same or equivalent part t-.

Claims (1)

[Claims] A semiconductor device characterized in that a multilayered thick film conductor pattern is formed on an insulating substrate having a high frequency semiconductor element and a capacitance element.