JPH02260425A - Electric element and manufacture thereof - Google Patents
Electric element and manufacture thereofInfo
- Publication number
- JPH02260425A JPH02260425A JP8002489A JP8002489A JPH02260425A JP H02260425 A JPH02260425 A JP H02260425A JP 8002489 A JP8002489 A JP 8002489A JP 8002489 A JP8002489 A JP 8002489A JP H02260425 A JPH02260425 A JP H02260425A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- electric element
- substrate
- insulating film
- insulating films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000003822 epoxy resin Substances 0.000 claims abstract description 14
- 229920003986 novolac Polymers 0.000 claims abstract description 14
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims abstract description 10
- 239000002356 single layer Substances 0.000 claims abstract description 5
- 239000004843 novolac epoxy resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 abstract description 14
- 239000009719 polyimide resin Substances 0.000 abstract description 7
- 239000003513 alkali Substances 0.000 abstract description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000004642 Polyimide Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- -1 compound alkoxide Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000004709 eyebrow Anatomy 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、ＬＳＩ、リニアｒｃ、トランジスタ、ＴＰＴ
、ＭＩＭ等の電気素子の表面保護膜や眉間絶縁膜に関す
る。[Detailed Description of the Invention] <Industrial Application Field> The present invention is applicable to LSI, linear rc, transistor, TPT
, relates to a surface protective film and glabella insulating film for electrical elements such as MIM.
〈従来技術〉
トランジスタ、リニアＩＣ等の電気素子の表面保護膜に
はポリイミド絶縁膜や二酸化硅素などの無機膜が多く使
われている。また、ＬＳＩの高集積化、大規模化に伴い
スルーホール数・配線長が増大し、これらは単層として
用いられる事もあるが、配線の微細化、多層化が進めら
れている。多様化する場合の眉間絶縁膜としてポリイミ
ド系樹脂が用いられている。また、液晶デイスプレィに
おいて高いコントラストと階調表示を得るためＴＰＴや
ＭＩＭと呼ばれる半導体素子を用いた液晶の駆動方式が
ある。このＴＰＴやＭ Ｉ Ｍの保護層として同様にポ
リイミド膜や金ｌ１ｌｌｉｆｌＩ化物の無機膜が使用さ
れている。<Prior Art> Polyimide insulating films and inorganic films such as silicon dioxide are often used as surface protective films for electric elements such as transistors and linear ICs. Further, as LSIs become more highly integrated and larger, the number of through holes and wiring lengths increase, and although these are sometimes used as a single layer, the wiring is becoming smaller and more multilayered. Polyimide resin is used as an insulating film between the eyebrows when diversifying. Further, in order to obtain high contrast and gradation display in a liquid crystal display, there is a liquid crystal driving method using a semiconductor element called TPT or MIM. Similarly, a polyimide film or an inorganic film of gold llliflI compound is used as a protective layer for TPT or MIM.
〈発明が解決しようとするＲＨ〉
個別電気素子がＩＣ，、ＬＳＩやＴＰＴなどの電気素子
の表面保護膜や眉間絶縁膜を金属酸化物の無機膜で形成
するためには蒸着やスパッタ、ＣＶＤなどの真空装置を
用いて膜付けするか、もしくはアルコールの水酸基の水
素を金属で置換した化合物アルコキシドのアルコ・−ル
溶液を用いることが多い、いずれも膜付けのコストがか
かりすぎる欠点がある。また、無機膜では多層配線を行
なうには、欠陥を少なくするための平坦化が十分にでき
ない傾向がある。<RH to be solved by the invention> Vapor deposition, sputtering, CVD, etc. are used to form the surface protection film and glabellar insulating film of individual electric elements such as ICs, LSIs, and TPTs with inorganic films of metal oxides. The membrane is often applied using a vacuum device, or an alcohol solution of a compound alkoxide in which the hydrogen of the hydroxyl group of the alcohol is replaced with a metal is often used.Both methods have the drawback of being too expensive to apply the membrane. Furthermore, inorganic films tend to be unable to be sufficiently flattened to reduce defects when forming multilayer wiring.
ポリイミド系樹脂を用いる場合、この平坦化については
比較釣行ない易イ。When using polyimide resin, flattening is relatively easy.
しかし、ポリイミドがきわめて高価な有機材料である基
本的欠点がある。さらに、無機膜やポリイミド膜をパタ
ニングする場合、ドライエツチングというエツチングの
できる真空装置を用いる必要が・あり、プロセス面の負
荷がきわめて大きくなる。これを避けるため、感光性の
ポリイミド系樹脂を用いる方法もあるが、この材料は通
常のポリイミド材料により大幅に高価である。加えて、
ボ＋勺イミド膜は透湿性があり、アルカリにも弱電気素
子の十分な保護機能を持っていない欠陥がある。However, the fundamental drawback is that polyimide is a very expensive organic material. Furthermore, when patterning an inorganic film or a polyimide film, it is necessary to use a vacuum device capable of dry etching, which greatly increases the load on the process. To avoid this, there is a method of using a photosensitive polyimide resin, but this material is significantly more expensive than ordinary polyimide materials. In addition,
The polyimide film is moisture permeable and has the defect that it does not have sufficient protection function for weak electric elements against alkali.
この欠陥を補うためＳｔｏｗやＰ−５ｉＮｌｌｌで最表
面層のバンシベーシゴン工程が必要なことが多い。In order to compensate for this defect, it is often necessary to perform a bansibasigon process on the outermost surface layer using Stow or P-5iNlll.
く課題を解決するための手段〉
本発明は複数の個別電気素子が形成された基板の表面に
ノボラック系エポキシ樹脂による絶縁膜が単層ないし複
数層積層してある電気素子である。Means for Solving the Problems The present invention is an electric element in which a single layer or a plurality of insulating films made of a novolac epoxy resin are laminated on the surface of a substrate on which a plurality of individual electric elements are formed.
個別電気素子としては、先述したようにトランジスタ、
リニアＩ Ｃ，、Ｌ Ｓ Ｉ 、ＭＴＭなどの半導体素
子等の電気素子である。従って基板はツリフン、ガリウ
ムヒ素、Ｓｉｇｎ、サファイア、アルミナ、ジルコニウ
ムなどの半導体や、無機絶縁膜、場合によっては放冷や
熱伝導性を付与するための熱の良導体の基板であっても
良い、ノボラック系エポキシ樹脂による絶縁膜が多層の
場合、眉間に電気の良導体である銅、アルミニウム、銀
、ニッケル、金など、あるいはこれらの合金の金属配線
、もしくは−イツトリウム酸化物やランタンの酸化物、
銅の酸化物などで構成される接電導性の導体層が形成さ
れても良い。As mentioned earlier, as individual electric elements, transistors,
It is an electric element such as a semiconductor element such as a linear IC, LSI, or MTM. Therefore, the substrate may be a semiconductor such as tsurifun, gallium arsenide, Sign, sapphire, alumina, or zirconium, an inorganic insulating film, or a novolac-based substrate that is a good thermal conductor to provide cooling and thermal conductivity in some cases. When the insulating film made of epoxy resin is multi-layered, there is metal wiring between the eyebrows made of copper, aluminum, silver, nickel, gold, etc., which are good electrical conductors, or alloys of these, or - yttrium oxide or lanthanum oxide,
An electrically conductive conductor layer made of copper oxide or the like may be formed.
本発明は個別電気素子が形成された基板の表面にノボラ
ック系エポキシ樹脂を骨格とする感光性樹脂を一様に塗
布形成し、電気接続がとれるよう必要部分が露出するよ
うに乾燥、露光、現像を順にして絶縁膜を積することを
特徴とする電気素子の製造方法と、この塗布、乾燥、露
光、現像および熱処理による硬膜を順に行う絶縁膜形成
プロセスと、金属薄膜など電気の良導体の膜付けとフォ
トリソグラフィによる導体パターン形成プロセスを交互
に行なうことにより、単層に限らず多層配線も行えるこ
とを特徴とする電気素子の製造方法である。導体層の電
気的接続をとる部分に、半田めっきや金などの貴金属め
っきおよびこれら金属１、合金を転写方式などにより、
または銀ペースト、カーボンペースト、銅ベーストなど
の導体ペーストを用いて印刷により肉厚のパッドを形成
しても良い０個別電気素子の一つに光のセンサー機能を
持たせる場合はあらかじめ全体もしくは個別電気素子上
のカラーフィルターを形成しても良い。カラーフィルタ
ーは印刷により形成することが簡便であるがレリーフ染
色法、顔料蒸着、転写などを併用したフォトリソグラフ
ィの手法で形成しても良い、必要に応じてこれら多層配
線上に金属などによる放熱板を積層しても良い。本発明
はこれ、ト付加的要素によりその価値を左右されるもの
でない。In the present invention, a photosensitive resin with a novolak epoxy resin skeleton is uniformly applied to the surface of a substrate on which individual electrical elements are formed, and then dried, exposed, and developed to expose necessary parts for electrical connection. A method for producing an electrical element characterized by depositing an insulating film in this order; an insulating film forming process in which coating, drying, exposure, development, and hardening of the film by heat treatment are performed in order; This method of manufacturing an electric element is characterized in that not only single-layer wiring but also multi-layer wiring can be formed by alternately performing conductor pattern forming processes using film deposition and photolithography. Solder plating, precious metal plating such as gold, and these metals 1 and alloys are applied to the electrically connected parts of the conductor layer by a transfer method, etc.
Alternatively, thick pads may be formed by printing using a conductor paste such as silver paste, carbon paste, or copper-based paste.If one of the individual electric elements is to have a light sensor function, the entire or individual electric element may be A color filter may be formed on the element. Color filters are easily formed by printing, but they may also be formed by photolithography methods that combine relief dyeing, pigment deposition, transfer, etc. If necessary, a heat sink made of metal or the like can be placed on these multilayer wiring. may be laminated. The value of the present invention does not depend on any additional elements.
本発明に用いる。ノボラック系エポキシ樹脂を骨格とす
る感光性樹脂は、各アルカリに対する溶解性をもたせる
ため無水ジカルボン酸と反応させてカルボキシル基を導
入し、かつ感光性を付与するためアクリロイル基を付加
したノボラック系エポキシ樹脂である。ノボラック系エ
ポキシ樹脂はフエノールノボラック系エポキシ樹脂とタ
レゾールノボラック系エポキシ樹脂に大別できるがいず
れの機能も硬膜後は十分な耐熱性、耐湿性、耐薬性をも
つため本発明に採用できる。Used in the present invention. Photosensitive resins with novolac epoxy resin as their backbone are reacted with dicarboxylic anhydride to introduce carboxyl groups in order to have solubility in various alkalis, and also have acryloyl groups added to impart photosensitivity. It is. Novolak epoxy resins can be broadly classified into phenol novolac epoxy resins and talesol novolak epoxy resins, and both of them can be employed in the present invention because they have sufficient heat resistance, moisture resistance, and chemical resistance after hardening.
く作用〉
ノボラック系エポキシ樹脂による絶縁膜はポリイミド系
樹脂の膜より耐湿、耐アルカリの面で優れているため、
本発明による絶縁膜を電気素子の表面に形成することに
より電気素子の信幀性向上を得ることができる。Effect〉 Insulating films made of novolak-based epoxy resin are superior to films made of polyimide-based resin in terms of moisture resistance and alkali resistance.
By forming the insulating film according to the present invention on the surface of an electric element, reliability of the electric element can be improved.
本発明を実施例により詳細に説明する。The present invention will be explained in detail by examples.
〈実施例〉
第１図は本発明による電気素子の模式断面図である。Ｓ
ｉｎｇの熱酸化膜（２）が形成してして個別電気素子が
形成してあるシリコン基板（１）上にフェノールノボラ
ック系エポキシ樹脂による絶縁膜（５）、（６）及びア
ルミニウムによる導体層（３）、（ａが形成された基板
である。もちろん、この他にも電気素子が設けられてい
る。<Example> FIG. 1 is a schematic cross-sectional view of an electric element according to the present invention. S
Insulating films (5) and (6) made of phenol novolak epoxy resin and a conductor layer (made of aluminum) are formed on the silicon substrate (1) on which a thermal oxide film (2) of ing is formed and individual electric elements are formed. 3), (a is the substrate on which it is formed.Of course, other electric elements are also provided.
絶縁膜（５）は、十分に乾燥させた半導体素子であるシ
リコン基板（１）上にスピナーでフェノールノボラック
系エポキシ樹脂を骨格とする感光性樹脂を塗布形成後、
乾燥、露光、現像、さらに熱処理を順に行うことにより
硬膜して厚さ約２ｐｍの絶縁膜（５）としたものである
、導体層（３）、（４）はアルミニウムをスパッタリン
グ装置により膜付後、公知のフォトリソグラフィの手法
で配線パターンとして形成したものである。絶縁膜（６
）は絶縁膜（５）と同様にパタニング、積層したもので
ある。The insulating film (5) is formed by applying a photosensitive resin having a skeleton of a phenol novolak epoxy resin onto a sufficiently dried silicon substrate (1), which is a semiconductor element, using a spinner.
The conductor layers (3) and (4) are made by drying, exposing, developing, and then heat-treating the film to form an insulating film (5) with a thickness of approximately 2 pm. Thereafter, a wiring pattern is formed using a known photolithography method. Insulating film (6
) is patterned and laminated in the same way as the insulating film (5).
〈発明の効果〉
本発明は耐酸・耐アルカリなどの耐薬品性及び耐湿性の
あるノボラック系エポキシ樹脂を絶縁膜として用いるた
め電気素子の信鯨性を向上できる。<Effects of the Invention> Since the present invention uses a novolac-based epoxy resin that has chemical resistance such as acid and alkali resistance and moisture resistance as an insulating film, it is possible to improve the reliability of electric elements.
ポリイミド系樹脂のパタニングはドライエツチングによ
るか、もしくは感光性ポリイミド樹脂を用いての溶剤現
像液によるかいずれかの方法によらざるを得ないが、ノ
ボラック系エポキシ樹脂は容易に感光性や希アルカリの
水溶液への溶解性を付与できるため、水現像に近いプロ
セスで簡単にかつ安全にパタニングできる特徴がある。Patterning of polyimide resins must be done by dry etching or by using a solvent developer using photosensitive polyimide resin, but novolac epoxy resins are easily patterned by photosensitive or dilute alkali. Since it can be given solubility in an aqueous solution, it has the characteristic that it can be easily and safely patterned using a process similar to water development.
加えてノボラック系エポキシ樹脂には２００°〜３００
℃前後の耐熱性があるため層間の絶縁膜としては十分な
性能をもつものである。In addition, novolak epoxy resin has a temperature of 200° to 300°.
It has sufficient performance as an interlayer insulating film because it has heat resistance of around ℃.
加えて、ノボラック系エポキシ樹脂はポリイミド系樹脂
と比較すると低価格であるため、コストメリットのある
電気素子を提供できる。In addition, novolac epoxy resins are less expensive than polyimide resins, so they can provide electrical elements with cost benefits.
【図面の簡単な説明】
第１図は本発明による電気素子の模式断面図である。
１・・・シリコン基板 ２・・・熱酸化膜３．
４・・・導体層 ５．６・・・絶縁膜時
許 出 願 人
凸版印刷株式会社
代表者 鈴木和夫
第１図BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view of an electric element according to the present invention. 1... Silicon substrate 2... Thermal oxide film 3.
4...Conductor layer 5.6...Insulating film
Applicant: Toppan Printing Co., Ltd. Representative: Kazuo Suzuki Figure 1
Claims (6)
板の表面にノボラック系エポキシ樹脂による絶縁膜がパ
ターン化されて積層してある電気素子。(1) An electric element in which a patterned insulating film made of novolac-based epoxy resin is laminated on the surface of a substrate on which a plurality of individual electric elements are formed and wired.
が設けられ、前記配線間をノボラック系エポキシ樹脂に
よる絶縁層が設けられている電気素子。(2) An electric element in which wiring is provided on a substrate on which a plurality of individual electric elements are formed, and an insulating layer made of novolac-based epoxy resin is provided between the wirings.
的素子。(3) The electrical device according to claim 1, wherein the electrical device is a semiconductor device.
的素子。(4) The electrical device according to claim 2, wherein the electrical device is a semiconductor device.
ノボラック系エポキシ樹脂を骨格とする感光性樹脂を一
様に形成し、乾燥、露光、現像してパターン化絶縁膜を
積層することを特徴とする電気素子の製造方法。(5) On the surface of the substrate on which a plurality of individual electric elements are formed,
A method of manufacturing an electric element, which comprises uniformly forming a photosensitive resin having a skeleton of novolac epoxy resin, drying, exposing and developing to laminate a patterned insulating film.
ノボラック系エポキシ樹脂を骨格とする感光性樹脂を一
様に形成し乾燥、露光、現像して形成した複数層の絶縁
膜と、該絶縁膜間に電気の良導体により単体層を、相互
に積層することを特徴とする電気素子の製造方法。(6) On the surface of the substrate on which a plurality of individual electric elements are formed,
A multi-layer insulating film formed by uniformly forming a photosensitive resin with a skeleton of novolac epoxy resin, drying, exposing, and developing, and a single layer with a good electrical conductor between the insulating films are mutually laminated. A method for manufacturing an electric element, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8002489A JPH02260425A (en) | 1989-03-30 | 1989-03-30 | Electric element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8002489A JPH02260425A (en) | 1989-03-30 | 1989-03-30 | Electric element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02260425A true JPH02260425A (en) | 1990-10-23 |
Family
ID=13706717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8002489A Pending JPH02260425A (en) | 1989-03-30 | 1989-03-30 | Electric element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02260425A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5659202A (en) * | 1996-01-26 | 1997-08-19 | Sharp Kabushiki Kaisha | Semiconductor device with a pair of dummy electrodes below an inner lead |
| US5925931A (en) * | 1996-10-31 | 1999-07-20 | Casio Computer Co., Ltd. | Semiconductor device having interconnect lines and connection electrodes formed in groove portions of an insulating layer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323273A (en) * | 1976-08-13 | 1978-03-03 | Mitsubishi Electric Corp | Production of resin seal ing type semiconductor device |
| JPS5740956A (en) * | 1980-08-25 | 1982-03-06 | Fujitsu Ltd | Semiconductor device |
| JPS62268132A (en) * | 1986-05-15 | 1987-11-20 | Sumitomo Chem Co Ltd | Organic insulating film for semiconductor |
-
1989
- 1989-03-30 JP JP8002489A patent/JPH02260425A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5323273A (en) * | 1976-08-13 | 1978-03-03 | Mitsubishi Electric Corp | Production of resin seal ing type semiconductor device |
| JPS5740956A (en) * | 1980-08-25 | 1982-03-06 | Fujitsu Ltd | Semiconductor device |
| JPS62268132A (en) * | 1986-05-15 | 1987-11-20 | Sumitomo Chem Co Ltd | Organic insulating film for semiconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5659202A (en) * | 1996-01-26 | 1997-08-19 | Sharp Kabushiki Kaisha | Semiconductor device with a pair of dummy electrodes below an inner lead |
| US5925931A (en) * | 1996-10-31 | 1999-07-20 | Casio Computer Co., Ltd. | Semiconductor device having interconnect lines and connection electrodes formed in groove portions of an insulating layer |
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