JPS60247949A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To reduce the amount of working hours in processing an insulation film which covers the wiring of semiconductive element by a method wherein a layer interposed insulation film and the like, which is performed patterning process, is obtained by a photosensitive polyimide resin by patterning and by heat- treatment of a polyimide system resin. CONSTITUTION:A semiconductive element 12 is formed on a main surface of semiconductive substrate 1 and single or plural layers 14, which are connected to this semiconductive element 12, are formed and then an insulation film 16 covers between these wiring layers or/and on the wiring layer. In the processes that a part of this insulation film 16 is treated to obtain connection between wiring layers or a part of the wiring layer is exposed, a photosensitive polyimide is used in at least a part of the insulation film 16, and the photosensitive polyimide is processed before curing. By doing this, the amount of working hours is reduced as well as eliminating damage from the wiring during the insulation film processing.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an interlayer or final insulating film in a single-layer or multi-layer wiring structure of a semiconductor device.

[Background Art] In recent years, organic resin films such as polyimide resins and silicone resins have been attracting attention as protective films for transistors, ICs, and LSIs, or as insulating films between multilayer interconnections. For example, taking polyimide resin as an example, in addition to its excellent heat resistance, polyimide resin is easier to flatten than inorganic insulating film materials such as silicon oxides and nitrides. It has many advantages such as high product yield and reliability.

Such polyimide resins are etched using normal photoetching technology to form through holes for electrical conduction between the upper and lower layers of the interlayer film and to form wire bonding pads in the final protective film. need to be done. In this case, a strongly alkaline etching solution containing hydrazine as a main component is used, but it has been found that the following problems arise in this case.

Hydrazine has the property of reacting with aluminum, and etching solutions containing hydrazine as a main component, such as hydrazine and hittler, have a composition such as NH,・NHt-H,0, and react with aluminum to form an AJ on the aluminum surface.
- Generates oxides such as OH-hilt Os.

That is, on a semiconductor substrate 1 as shown in FIG. 1, a layer 2 consisting of a first layer (lower layer) wiring 2 of aluminum, a glabella insulating film 3 of polyimide, a second layer (upper layer) wiring 4, and a protective insulating film 5 of polyimide is formed. In the layer wiring structure, reaction products 7 are generated on the surface of the lower layer wiring 2 and on the surface of the bonding pad 6 which is the terminal of the upper layer wiring 4. This reaction product deteriorates the bondability to the upper layer wiring 4 through the through hole, and also impairs the bondability of the gold or aluminum wire to the pad 6 in the bonding pad 6. It will be marked as defective. Therefore, it is necessary to remove the reaction product by washing it with sulfanoic acid or the like, but it has been found that this increases the number of manufacturing steps and complicates the process.

Further, in forming a multilayer aluminum wiring, as shown in FIG. 2, small protrusions 8 such as hillocks formed on the first layer (lower layer) aluminum wiring 2 after heat treatment cause surface steps. When a polyimide film 3 is applied as an interlayer film on this aluminum, the step difference on the surface is smaller than that when an inorganic insulating film is used, but protrusions 9 still remain on the surface.

In this case, a photoresist mask 10 is used that is coated on top of the photoresist mask 10, but the film thickness of this photoresist mask 10 must be sufficiently thick, and the etchant may penetrate and cause pinholes between the layers (111j3jc). 11, leading to a short-circuit accident between the upper and lower wiring.As a countermeasure for this, it is necessary to take measures such as applying resist more than once.In any case, when polyimide resin is used as an insulating film, there are many steps. I couldn't avoid it.

Such polyimide resins are being developed as photosensitive heat-resistant materials that have both the functions of photoresists and insulating films, and the results have been published one after another. ((a) Hiraki,
Ero: Sensitive heat-resistant insulation, electronic materials November 1981 P
, 47. (b) Indenter, rust, etc.: Fine pattern formation method using photosensitive polyimide, electronic materials, July 1983, p. 30) For example, the photosensitive polyimide developed by the present applicant et al. It contains a highly pure photosensitive polymer composition to which a photosensitive group such as the following is bonded. In this photosensitive polyimide, the sensitivity is LSI
It has the same or higher sensitivity as high-sensitivity rubber-based photoresists for commercial use, has excellent resolution, and has heat-resistant electrical and mechanical properties that are equivalent to or higher than those of polyimide-based resins currently used in LSIs and the like.

The present invention solves the above-mentioned problems by using a photosensitive resin as described above.

[Object of the Invention] One object of the present invention is to eliminate damage and defects on the wiring surface that occur when cutting an insulating film covering the surface of a semiconductor element.

Another object of the present invention is to reduce pinhole defects occurring in an insulating film covering the surface of a semiconductor element.

Another object of the present invention is to provide a technique for reducing the number of man-hours and costs for forming an insulating film covering the wiring of a semiconductor element.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, a semiconductor element is formed on the main surface of a semiconductor substrate, a single layer or a plurality of wiring layers are formed to connect to this semiconductor element,
At least one part of the insulating film is covered with an insulating film between the wiring layers or on the wiring layer, and when processing a part of the insulating film to establish conduction between the wiring layers or expose a part of the wiring layer. The part uses photosensitive polyimide, and by performing a mechanical process on this photosensitive polyimide before curing,
The above object is achieved by eliminating damage to the wiring during processing of the insulating film and reducing the number of heavy man-hours.

[Example 1] FIG. 3 shows an example of the present invention, and is a cross-sectional view of a semiconductor device in which a final insulating film made of photosensitive polyimide is formed on the surface of a semiconductor element having single-layer wiring. It is. In the present invention, the photosensitive resin is not particularly limited, but in the examples described below, a case will be described in which a photosensitive polyimide resin is used.

In the figure, 1 is a semiconductor substrate, and 12 is a semiconductor element, for example, a base diffusion layer of a transistor. 13 is a surface oxide (8102) film. Reference numeral 14 denotes an aluminum wiring that makes low resistance contact with the above element, and 15 denotes a terminal portion of the aluminum wiring that becomes a bonding band. Reference numeral 16 denotes a protective insulating film made of hardened photosensitive polyimide, which is processed so that a portion that will become a bonding band is exposed.

FIG. 4 (al to ge) is a chart (plan) showing each step from element formation to final protective film formation by the back fabrication process of the semiconductor device shown in FIG. 3.

FIGS. 5 to 10 are process sectional views embodying each process shown in the above chart.

Hereinafter, each step will be explained in detail.

(at p-type diffusion in part of semiconductor (St) substrate l n+
By selectively performing type diffusion, the semiconductor elements 12 such as transistors are released as shown in FIG. 5, and the insulating film (S
tOt ) 13 is photo-etched to form a contact hole 36 for taking out electrical signals to the outside of the element.

(bl) An aluminum film (AJ) is formed on the substrate 1 and the insulating film 13 using a vapor deposition method (or sputtering method), and the Al film is patterned using a photoetching method to form the A chisel electrode (wiring) 14. 6. Form as shown in Figure 6.

(C) As shown in FIG. 7, a photosensitive polyimide film 16 is formed to cover the entire surface.

The steps for forming this photosensitive polyimide film are as follows:
After heat treatment at 70°G for 15 minutes to sufficiently lower the contact resistance between A71I and Si in the contact hole 36, the photosensitive polyimide 16 with a resin concentration of 14% by weight and a viscosity of 30 poise in the face was heated at a rotation speed of 300 rpm. Apply with a spinner for 30 seconds.

As this photosensitive polyimide 16, polyamic acids, bisazide photocrosslinking agents, amine compounds having carbon-carbon double bonds, compounds containing one or more hydroxyl groups in the molecule and whose boiling point is 150°C or higher at normal pressure are used. In the photosensitive polymer composition, the structure of the polyamic acid is represented by the repeating unit of the general formula: (wherein R' represents a divalent aromatic ring-containing organic group or a silicon-containing organic group). A photosensitive polymer composition is used. After spinner application, 80℃
Pre-bake for 20 minutes. In this case, since the baking temperature is as low as 80° C., no imide bonding reaction occurs and the thermosetting reaction of the polyimide film is not promoted. At this time, the film thickness of the photosensitive polyimide 16 is about 4.5 μm.

(dl After this, as shown in FIG. 8, pass through the mask 17 and apply 1c, 350 to 43
Exposure is performed using ultraviolet rays of 0 nm (nanometers).

The appropriate photosensitive energy is 100 mJ/crA, but considering pattern processing accuracy, etc., 20 to 200 m
It can be arbitrarily selected within the range of J/cIiI.

(eJ After exposure, add 2 to a developer with a composition of n-methylpyrrolidone (referred to as NMP): water = 4: 1 (volume ratio).
Develop by immersing at 5°G for 10 minutes. At this time, the film thickness of the photosensitive polyimide 16 is about 4 μm. By this development, the unexposed portion of the photosensitive polyimide film 16 is dissolved and removed, and a through hole 18 is opened so that a portion 15 of the AJ wiring 14 is exposed, as shown in FIG. Thereafter, the residue on the unexposed polyimide area is removed using the above-mentioned cleaning solution of NMP:water=1:1.

(fl, :17) 30 minutes at 200℃ and 400'
Heat treatment was performed at C for 30 minutes, and as shown in FIG.
A polyimide film 19) having heat resistance of 0° C. is formed.

This temperature of 410° C. is a temperature that can sufficiently withstand the processing temperature during resin molding.

In the case of a glass-sealed product in which a semiconductor chip is sealed in a ceramic package using low-melting glass, the final heat treatment conditions for the photosensitive polyimide are 430°C for 60 minutes or 450°C, Heat treatment is performed for 30 minutes.

〔effect〕

According to the present invention described in the embodiments above, the following effects can be obtained.

(1) To obtain a patterned interlayer insulating film or a final protective insulating film, etc., it was necessary to form a polyimide resin obtained by buttering and heat-treating a photosensitive polyimide resin. Since there is no need to use a photoresist film, the number of steps can be reduced.

(2) (From 11, it is possible to reduce the cost of the semiconductor device.

(3) In the conventional method of using polyimide resin for glabellar insulating films, etc., the polyimide is heat-treated (350°C), cured, then buttered using a photoresist, and then the polyimide film is etched using a strong alkali such as hydrazine. In order to do this, reaction products were generated on the aluminum surface. However, if photosensitive polyimide is used as in the present invention, NMP, which is an etching solution for photosensitive polyimide, is a neutral organic solvent, so it will not produce reaction products on the aluminum surface, and it will improve the bonding properties during good bonding. Therefore, it is possible to improve the manufacturing yield of semiconductor devices.

(41) Since wire bonding can be performed directly on the aluminum surface, the number of steps and costs can be reduced.

(5) Even if hillox is formed on the aluminum wiring due to heat treatment, patterning is performed by exposing the photosensitive polyimide resin formed on the aluminum wiring and using the 'fA image, without using a conventional photoresist film.
This eliminates pinholes and improves yield.

(6) For photosensitive polyimide, the heat resistance of the insulating film after curing can be changed by changing the final heat treatment conditions (treatment temperature and time). Therefore, by appropriately selecting the heat treatment conditions for the final heat treatment after photosensitive polyimide buttering depending on the desired heat resistance temperature determined by the sealing type of the semiconductor device, etc., it is possible to obtain an insulating film having heat resistance suitable for the desired heat resistance temperature.

[Embodiment 2] FIG. 11 shows another embodiment of the present invention,
FIG. 2 is a cross-sectional view of a semiconductor device having multilayer wiring, for example, two-layer wiring, in which photosensitive polyimide is used for the 1-interval insulating film and the final protective insulating film.

In the figure, 20 is the first layer aluminum wiring, 21 is the photosensitive polyimide film formed as an interlayer film, and 22 is the second layer aluminum wiring.
The aluminum wiring layer 23 is a photosensitive polyimide film formed as a final protective film. The first layer wiring 20 and the second layer wiring 22 are connected through a through hole (through hole 24) in the interlayer film 21.

A through hole (A/25) is formed in a part of the final protective film 23, and the terminal portion of the second layer wiring is exposed as a bonding pad 26.

FIG. 12 is a chart showing each step from element formation to final protective film formation in the manufacturing process of the semiconductor device shown in FIG. 11.

FIG. 13 to FIG. 20 are process sectional views embodying each process shown in the above chart.

Each step will be explained in detail below.

(Al) A semiconductor element 12 is formed by repeatedly performing surface oxidation photoetching, selective impurity diffusion, etc. on a semiconductor (St) substrate 1, and a surface oxide (Si) is formed by contact photoetching as shown in FIG.
n,) Part of the membrane 13 is opened.

(bl Aluminum (Al) on the entire surface”a=1.0μm
A first layer aluminum wiring 13 is formed by using a vapor deposition method and patterning by a photoetching technique to form a first layer aluminum wiring 13 as shown in FIG.

tct 1st Layer Wiring] Photosensitive polyimide varnish is spin-coated on 3 using a spinner to form an interlayer insulating film. This photosensitive polyimide contains a photosensitive polymer in which a bisazide base crosslinking agent is bonded to the aromatic polyimide precursor described in [Example 1].

For the festival, a solution with a resin concentration of 14% by weight and a viscosity of 30 poise was used, and the spinner rotation speed was 300 rpm.
The coating is applied for a few seconds to form a photosensitive polyimide film 21 as shown in FIG.

(dl After this, pre-baking at 80℃ for 20 minutes,
Ultraviolet light (wavelength 350-440 nm) is transmitted through a metal mask (not shown) as in the case of normal photoresist.
Expose at ℃. Since the photosensitive energy affects the buttering property during development, the photosensitive energy should be adjusted at 20 to 200 mJ/
Select the optimal value suitable for the purpose from crN. Thereafter, it is developed at 25° C. for about 10 minutes with a developer having a composition of N-methylpyrrolidone:water-4:1, and then developed at 200° C. in a non-oxidizing atmosphere.
C, 30 minutes and 4300G, 60 minutes, the film thickness 2 was patterned as shown in Fig. 16.
．． An interlayer insulating film 21a made of a polyimide film with a thickness of 5 μm is obtained.

(e) Next, in order to form a second layer wiring, aluminum (or aluminum containing silicon) is formed using a vapor deposition method, and a second layer aluminum wiring 22 is formed using a photoetching technique as shown in FIG. 17. This second
The layer aluminum wiring 22 is connected to the first layer aluminum wiring J3 through the through hole 24 of the interlayer insulating film 21a.

(fl) After this, as shown in FIG. 18, a photosensitive polyimide 23 is coated so as to cover the second layer aluminum wiring 22, prebaked, exposed, and developed, and the photosensitive polyimide is patterned as shown in FIG. 19. A film 23a is formed.The formation of this photosensitive polyimide film 23a is performed in the step (
It is formed using the same material as the glabellar insulating film described in C1 and through the same steps tc+ to te+.

(gl After development, heat treatment was performed at 200°C for 930 minutes and at 4306C for 60 minutes in a non-oxidizing atmosphere to form a pattern with a thickness of 2.5 μm (hardened) as shown in Figure 20.
Then, a polyimide coating 23b is formed.

This final heat treatment (contact alloy) at 430°C for 60 minutes hardens the photosensitive polyimide film and at the same time electrically Contact resistance will be reduced and normal electrical continuity will be obtained.

26 indicates a bonding pad portion. In the case of a two-layer wiring structure, the steps in the example described above are completed, but if aluminum wiring is further formed in the upper layer to create a wiring structure of three or more layers, the steps are the same as in the case of the second layer of aluminum wiring. It is possible to form it by repeating the method.

In the above embodiment, a case is described in which photosensitive polyimide is used as an interlayer and insulating film, but the present invention also uses conventionally used inorganic films such as polyimide resin and silicon dioxide as an interlayer insulating film. It is also possible, and in that case, it goes without saying that a photoresist is used for buttering.

〔effect〕

According to the present invention described in the above embodiments, the following effects can be obtained.

(1) By using an interlayer insulating film and a final protective aK photosensitive polyimide, pinholes caused by the through-hole can be eliminated without using photoresist. As a result, short-circuit defects between upper and lower wiring layers can be prevented in the interlayer insulating film.

(2) By using photosensitive polyimide, the number of steps is significantly reduced compared to when photoresist is used, resulting in cost savings.

(3) By using photosensitive polyimide as an insulating film or a protection film, the heat treatment process can also be used to reduce the electrical resistance between interconnects, reducing the number of steps and increasing productivity. As a result, costs can be reduced.

That is, when we investigated the relationship between the heat treatment temperature and the heat resistance of the cured polyimide film for the above photosensitive polyimide, we found that the final heat treatment at 400°C or higher, preferably 430'C or higher, is necessary to obtain sufficient heat resistance. I found out it was necessary.

It is necessary to volatilize the photosensitizing agent added to the photosensitive polyimide at as high a temperature as possible, that is, to perform heat treatment, and the heat resistance of the film is determined depending on this heat treatment temperature. I understand. These properties are not found in American polyimides.

For this reason, when using photosensitive polyimide as an insulating film on the upper layer wiring, it is preferable to perform heat treatment at 400 to 450°C. Therefore, when this photosensitive polyimide is used in place of conventional polyimide, heat treatment at a higher temperature than in the conventional case is required.

The inventor's studies have revealed that the heat resistance of the photosensitive polyimide used in the present invention can be further improved by heat treatment at a higher temperature of 480° C. or lower.

Therefore, it is possible to carry out both the contact alloy treatment (400 to 450° C.) of multilayer aluminum wiring, which was performed in the prior art, and the final heat treatment for hardening the polyimide tiles. The heat treatment temperature is 380 to 480°C.
However, the temperature to be selected is determined by the heat resistance of other parts of the device components and the extent to which the polyimide coating formed from photosensitive polyimide is required.

(4) Since the heat treatment time is shortened overall, it is possible to reduce the occurrence of unevenness (hillocks) in the insulating film on the aluminum wiring, and at the same time, it is possible to reduce the characteristic deterioration of semiconductor elements due to repeated high-temperature heat treatment, such as changes in impurity concentration distribution. It is possible to reduce a decrease in the current amplification factor hfe caused by this.

[Embodiment 3] FIG. 21 (at to (gl) shows one embodiment of the present invention, and is a chart (planned diagram) of a polyimide film forming process in a semiconductor device.

FIGS. 22 to 26 are process cross-sectional views corresponding to FIGS. 21 (al to (gl).

Each step will be explained in detail below.

(Semiconductor element 12 on the surface of the silicon semiconductor substrate 1)
is formed and the surface is covered with a silicon oxide (S10t) film 12. Next, an aluminum film is deposited using the vapor deposition method (
or sputtering method) and patterned by photoresist processing to form the aluminum wiring 13 (see FIG. 22).

(b) Apply a photosensitive polyimide face to the substrate surface. This photosensitive polyimide 28 is made by bonding a photosensitive group such as bisazide to a wholly aromatic polyamide precursor developed by the present applicant.In particular, by increasing the amount of photosensitive groups, the opacity of the photosensitive polyimide film can be improved. It's about making your sexuality bigger.

The resin concentration in the festival is 14% by weight, the viscosity is 30 poise,
Coating is carried out using a spinner at a rotational speed of 300 rpm for 30 seconds. After application, pre-bake at 85±5°C for 20 minutes to dry.

The film thickness of the photosensitive polyimide 4 at this time is about 4.5 μm (see FIG. 23).

+CI After this, as shown in FIG. 24, exposure to ultraviolet rays is performed through a mask 29. A suitable exposure energy is 200 mJ/crA.

(dj Development is performed to remove the unexposed portion of the photosensitive polyimide 28, and a through hole 30 is opened so that a part of the wiring 13 is exposed, for example, as shown in FIG. 25. The developing solution at this time is NMP ( Using a composition of 4:1 (volume ratio) of normal methyl pyrrolidone and water, the sample was immersed for 10 minutes at 25° C. The film thickness of the photosensitive polyimide 6 at this time was about 4 μm.

After this, the developed semiconductor substrate was treated with NMP:water in a ratio of 1:1.
The remaining part of the photosensitive polyimide solution is removed by immersing it in a mixed solution and cleaning it once.

Subsequently, washing with only water is performed for 20 to 30 minutes to completely eliminate foreign substances on the surface of the photosensitive polyimide film.

Finally, heat treatment is performed to volatilize a part of the photosensitive groups in the photosensitive polyimide and polymerize and harden it.
A polyimide film 31 patterned as shown in the figure is obtained. For this heat treatment, first
Bake for minutes, then 400±5℃ in nitrogen atmosphere
Cure for 60 minutes. FIG. 26 is a plan view corresponding to FIG. 25, in which the terminal portion 13a of the wiring 13 is passed through the through hole 8 made in the colored or opaque polyimide film 7.
It shows the form in which is exposed as a pounding pad (・
Ru.

tel Thereafter, although not shown, the wafer-shaped semiconductor substrate is pelletized by scribing, and each pellet is sent to a process for assembling into a package. That is, the second
As shown in FIG. 7, a lead frame in which a tab 32 and a plurality of glue portions 33 are integrally formed is prepared, and the bullet 34 is connected onto the tab 32 using silver paste or the like (bullet bonding).

ff1 Subsequently, as shown in FIG. 28, a connection (wire bonding) is made between the bullet 34 and the bonding pad portion 33 via the wire 35. In this wire bonding, as shown in FIG. 26, the wiring terminal portion 13a that becomes the bonding pad can be clearly distinguished from the colored or opaque polyimide film surrounding it, making it easy to determine the bonding position. becomes.

In this invention, when bonding is automatically determined using a positioning sensor during bonding, a part of the original emitted from the light source is placed on the bonding pad (3a).
The light is reflected by the light and is received by the light receiving section (sensor). Next, the signal from the light receiving section enters the light receiving circuit, which converts the black and white of the pattern into on/off signals, generates a signal to align with the white part, and passes through the bonding operation control circuit to the bonder. Make wire bonding work.

(gl) Finally, the semiconductor device is completed by performing resin molding and sealing the entire pellet.

〔effect〕

Transparency of photosensitive polyimide can be controlled by changing the amount of photosensitive groups (bisazide); increasing the amount of photosensitive groups causes the polyimide to turn black and lose its light transmittance. Therefore, by using photosensitive polyimide as the final protective film, the recognition accuracy of the bonding pad position is dramatically improved compared to the case of using a conventional transparent film, making it possible to perform automatic positioning bonding using sensors, and As a result, assembly costs can be reduced.

[Application field]

The present invention can be applied to semiconductor devices having single-layer or multi-layer wiring, such as single transistors, ICs, and LSIs.

[Brief explanation of drawings]

FIGS. 1 and 2 are cross-sectional views showing examples of semiconductor devices using polyimide resin for wiring structure. FIG. 3 shows an embodiment of the present invention, and is a sectional view of a semiconductor device having single-layer wiring. FIG. 4 is a chart showing one embodiment of the present invention and showing a part of the manufacturing process of a semiconductor device having single-layer wiring. FIGS. 5 to 10 are process sectional views corresponding to FIG. 4. FIG. 11 shows another embodiment of the present invention, and is a sectional view of a semiconductor device having a two-layer wiring structure. FIG. 12 - Frame 1 is a chart showing another embodiment of the present invention and showing a part of the manufacturing process of a semiconductor device having two-layer wiring. 13 to 20 are process sectional views corresponding to FIG. 12-m. FIG. 21 shows another embodiment of the present invention, and is a chart showing part of the manufacturing process of a resin-sealed semiconductor device. 22 to 28 are process sectional views (however, FIG. 26 is a plan view) corresponding to the #Σ(2) rotation in FIG. 21. DESCRIPTION OF SYMBOLS 1... Semiconductor base, 2... First layer aluminum wiring, 3... Interlayer insulating film (polyimide resin), 4...
2nd layer aluminum wiring, 5... protective insulating film (polyimide resin), 6... bonding pad, 7...
Reaction product, 8・°° Hillox, 9...Protrusion, 1
0... Photoresist, 11... Pinhole, 12.
... Semiconductor element, 13... Oxide film, 14... Aluminum wiring, 15... Bonding pad, 16.
...Protective insulating film (photosensitive polyimide), 17... Mask, 18... Through hole, 19... Protective film (cured photosensitive polyimide), 20... First layer aluminum wiring, 21. ...Photosensitive polyimide, 22...Second
Layer aluminum wiring, 23... photosensitive polyimide, 2
4.25... Through hole, 26... Bonde ink pad, 28... Photosensitive polyimide (opaque), 2
9...Mask, 30...Through hole, 31...
Hardened photosensitive polyimide, 32...Tab, 33...
・Lead, 34... Chip, 35... Wire, 36
...Contact hole. Agent Patent Attorney Akira Takahashi Mistakes 1 Figure 2 Figure 3 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 16 Figure 17 Figure 21 Figure 22 Figure 24 Figure 25

Claims (1)

[Claims] 1. A semiconductor substrate, one or more semiconductor elements formed on the soil surface of the substrate, single-layer or multilayer wiring formed on these semiconductor elements, and between or between the wirings and the wirings. Cover the top and
1. A semiconductor device comprising an insulating film from which a portion of the insulating film is removed, wherein at least a portion of the insulating film is made of a resin obtained by patterning and curing a photosensitive resin. 2. The semiconductor device according to claim 1, wherein the insulating film is covered on the wiring, and a part of the insulating film is opened as a bonding band portion. 3. The insulating film is formed as an interlayer insulating film between multilayer wiring, and the upper and lower wirings are electrically connected through a through hole formed in a part of the insulating film. The semiconductor device according to item 2. 4. The insulating film according to claim 1, wherein the insulating film is formed as an interlayer insulating film between multilayer wiring, and is covered on the upper wiring, and a part of the insulating film is opened as a bonding pad part. Semiconductor equipment. 5. A step of forming one or more semiconductor elements on the main surface of a semiconductor substrate, a step of forming a single-layer or multiple-layer wiring connected to the semiconductor element, and a step of covering between or on the wiring with an insulating film. A method for manufacturing a semiconductor device comprising the steps of: using a photosensitive resin for part or all of the insulating film, and patterning the photosensitive resin before curing. A method for manufacturing a semiconductor device. 6. As the photosensitive resin, polyamic acid, bisazide photocrosslinking agent, amine compound having carbon-carbon double bond, compound containing one or more hydroxyl group in the molecule and whose boiling point is 150°C or higher at normal pressure. A photosensitive polymer composition comprising a polyamic acid whose structure is represented by a repeating unit of the general formula: (wherein R' represents a divalent aromatic ring-containing organic group or a silicon-containing organic group). A method for manufacturing a semiconductor device according to claim 5. 7. The method of manufacturing a semiconductor device according to claim 6, wherein the final heat treatment temperature of the photosensitive resin is selected to be a temperature suitable for the sealing temperature of the semiconductor device. 8. Manufacturing a semiconductor device according to claim 6, in which a heat treatment for forming multiple layers of wiring and obtaining electrical continuity between the upper and lower wirings also serves as a final heat treatment for the photosensitive resin. Method. 9. The method for manufacturing a semiconductor device according to claim 6, wherein the photosensitive resin is made opaque by increasing the content of photosensitive groups.