JPH0226017A - 有機金属気相成長法における有機金属化合物の飽和蒸気生成方法 - Google Patents
有機金属気相成長法における有機金属化合物の飽和蒸気生成方法Info
- Publication number
- JPH0226017A JPH0226017A JP17489388A JP17489388A JPH0226017A JP H0226017 A JPH0226017 A JP H0226017A JP 17489388 A JP17489388 A JP 17489388A JP 17489388 A JP17489388 A JP 17489388A JP H0226017 A JPH0226017 A JP H0226017A
- Authority
- JP
- Japan
- Prior art keywords
- cylinder
- inner tube
- carrier gas
- organometallic compound
- organometallic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 229920006395 saturated elastomer Polymers 0.000 title claims description 9
- 125000002524 organometallic group Chemical group 0.000 title claims description 7
- 150000001875 compounds Chemical class 0.000 title abstract description 4
- 239000012159 carrier gas Substances 0.000 claims abstract description 34
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract description 33
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 4
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000007787 solid Substances 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17489388A JPH0226017A (ja) | 1988-07-15 | 1988-07-15 | 有機金属気相成長法における有機金属化合物の飽和蒸気生成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17489388A JPH0226017A (ja) | 1988-07-15 | 1988-07-15 | 有機金属気相成長法における有機金属化合物の飽和蒸気生成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0226017A true JPH0226017A (ja) | 1990-01-29 |
| JPH0531293B2 JPH0531293B2 (OSRAM) | 1993-05-12 |
Family
ID=15986527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17489388A Granted JPH0226017A (ja) | 1988-07-15 | 1988-07-15 | 有機金属気相成長法における有機金属化合物の飽和蒸気生成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0226017A (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06154579A (ja) * | 1992-11-26 | 1994-06-03 | Japan Atom Energy Res Inst | 原料容器 |
-
1988
- 1988-07-15 JP JP17489388A patent/JPH0226017A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06154579A (ja) * | 1992-11-26 | 1994-06-03 | Japan Atom Energy Res Inst | 原料容器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0531293B2 (OSRAM) | 1993-05-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |