JPH02254747A - Chip package - Google Patents

Chip package

Info

Publication number
JPH02254747A
JPH02254747A JP1077214A JP7721489A JPH02254747A JP H02254747 A JPH02254747 A JP H02254747A JP 1077214 A JP1077214 A JP 1077214A JP 7721489 A JP7721489 A JP 7721489A JP H02254747 A JPH02254747 A JP H02254747A
Authority
JP
Japan
Prior art keywords
leads
power supply
chip
ground
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1077214A
Other languages
Japanese (ja)
Inventor
Hiroyuki Hamaguchi
博幸 濱口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1077214A priority Critical patent/JPH02254747A/en
Publication of JPH02254747A publication Critical patent/JPH02254747A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To make it possible to use all leads connected to the peripheral part of a semiconductor component as leads for signal use by a method wherein power electrodes and grounding electrode are formed on the central part of the surface of the semiconductor component and a supply of a power supply and the ground is performed through the electrodes. CONSTITUTION:A semiconductor chip 1 is installed facing the surface of a circuit to its lower side and power electrodes 4 provided closer to the central part of the circuit surface and pads 8 for power electrode use are connected to each other by soldering. Moreover, leads 3 are connected to pads 7 for lead use provided on the periphery of the circuit surface of the chip 1 by thermocompression bonding. In short, a signal is transmitted in the order of the chip 1 - bump electrodes 2 - the leads 3 - the pads 7 - internal wirings 10. Moreover, a power supply and the ground are connected with the chip - the electrodes 4 - the pads 8 - the wirings 10 and the power supply and the ground can be supplied to the chip 1. Thereby, all the leads can be used as leads for signal use.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体素子を高密度実装するためのチップパ
ッケージに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a chip package for high-density packaging of semiconductor elements.

〔従来の技術〕[Conventional technology]

従来、この種のチップパッケージとしては、第3図に示
すように周辺部に形成されたバンプ14にリード13が
接着された半導体部品12と、リード13が接続された
り一ドパッド15と入出力用端子18を持った基板17
と、半導体部品12を基板17上に保持するシリコーン
ラバー16と、封止用キャップ19とヒートシンク2゜
により構成されていなく例えば特願昭58−94204
参照)、又、他の従来のチップパッケージとして半導体
回路面全体にバンプが形成されたフリップチップがあっ
た。
Conventionally, as shown in FIG. 3, this type of chip package includes a semiconductor component 12 with leads 13 bonded to bumps 14 formed on the periphery, and a semiconductor component 12 to which the leads 13 are connected or a pad 15 for input/output. Board 17 with terminals 18
, a silicone rubber 16 for holding the semiconductor component 12 on the substrate 17, a sealing cap 19, and a heat sink 2°.
), and another conventional chip package is a flip chip in which bumps are formed on the entire semiconductor circuit surface.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

第3図に示すような従来のパッケージでは、半導体チッ
プ12と外部との接続がリード13を介してのみ行なわ
れている。従って電源及びグランド供給用のリードが必
要となる為、信号用のリードとしては全リード数の50
〜60%しか使用することができない。
In the conventional package as shown in FIG. 3, the semiconductor chip 12 is connected to the outside only through leads 13. Therefore, leads for power supply and ground supply are required, so 50 of the total number of leads are required for signal leads.
Only ~60% can be used.

又、電源・グランドの供給をリードを介して行う為チッ
プの多ピン化に伴ってリードの微細化が進むとリード部
分での抵抗が大きくなり電源・グランド供給が困難とな
るという問題点がある。またフリップチップタイプのパ
ッケージでは、半導体チップと基板との熱膨張差により
、半田付接合部にクラックがはいりやすいなめ、バンプ
形成エリアが中央部のみに限られ、形成出来る端子数に
隔置がある0例えば形成可能エリアが4龍とし、形成ピ
ッチを0.5m−おきの格子点とすると、バンプ数は(
410,5)  =64ケにすぎない。
In addition, since power and ground are supplied via leads, there is a problem that as the number of pins on chips increases and the leads become smaller, the resistance in the leads increases, making it difficult to supply power and ground. . In addition, in flip-chip type packages, cracks are likely to occur in the solder joints due to the difference in thermal expansion between the semiconductor chip and the substrate, and the bump formation area is limited to the center, which means that the number of terminals that can be formed is spaced apart. 0For example, if the formation possible area is 4 dragons and the formation pitch is grid points every 0.5m, the number of bumps is (
410,5) = only 64 digits.

この数は、電源・グランド供給としては十分であるが信
号用としては少ない。
This number is sufficient for power supply and ground supply, but is small for signal use.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のチップパッケージは、回路面の周辺部にバンプ
が形成され前記回路面の中央部に電源(グランドを含む
)供給用の電源電極が形成された半導体チップと、前記
電源電極に接続される電極用パッドが表面の中央部に設
けられ前記表面の周辺部にリード用パッドが設けられ裏
面に入出力端子が設けられこの入出力端子と前記電極用
パッドまたは前記リード用パッドとを接続する内部配線
が内部に設けられた配線基板と、前記バンプおよび前記
リード用バンプに接続されたリードとを含んで構成され
る。
The chip package of the present invention includes a semiconductor chip in which bumps are formed on the periphery of a circuit surface and a power supply electrode for supplying power (including ground) is formed in the center of the circuit surface, and the semiconductor chip is connected to the power supply electrode. An electrode pad is provided at the center of the front surface, a lead pad is provided at the periphery of the front surface, an input/output terminal is provided at the back surface, and an interior connecting the input/output terminal with the electrode pad or the lead pad. It is configured to include a wiring board in which wiring is provided, and leads connected to the bumps and the lead bumps.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例を示す断面図であり、第2図
は本実施例に使用した半導体チップ1の平面図である。
FIG. 1 is a sectional view showing an embodiment of the present invention, and FIG. 2 is a plan view of a semiconductor chip 1 used in this embodiment.

第1図において、基板6には表面周辺にリード用パッド
7および表面中央部の凸部に電源電極用パッド8が形成
されており、裏面には外部との接続の為の入出力端子1
1が形成されている。そして基板6の内部には内部配線
10が形成されている。
In FIG. 1, a board 6 has a lead pad 7 around the front surface and a power supply electrode pad 8 on a convex portion in the center of the front surface, and an input/output terminal 1 for external connection on the back surface.
1 is formed. Internal wiring 10 is formed inside the substrate 6.

半導体チップ1は回路面を下側として設置されており(
フェイスダウン)、回路面の中央部寄りに設けられた電
源電極4と電源1掻用パッド8は半田付けによって接続
されている。そして、リード3は半導体チップ1の回路
面周囲に設けられたリード用バッド7に熱圧着により接
続されている。つまり、信号は半導体チップ1〜パン1
2〜リード3〜リード用パツド7〜内部配線10と接続
されている。また電源及びグランドは半導体チップ1〜
電源電極4〜電源電極用パッド8〜内部配線10と接続
され半導体チップ1に電源・グランドを供給することが
できるようになっている。電源・グランド供給ルートは
ほぼ最短のルートになっており、リードを用いるものと
比べ、抵抗を小さくできる。
The semiconductor chip 1 is installed with the circuit side facing down (
(face down), the power supply electrode 4 provided near the center of the circuit surface and the power supply 1 scratching pad 8 are connected by soldering. The leads 3 are connected to lead pads 7 provided around the circuit surface of the semiconductor chip 1 by thermocompression bonding. In other words, the signal is from semiconductor chip 1 to bread 1
2 - lead 3 - lead pad 7 - internal wiring 10 are connected. In addition, the power supply and ground are connected to the semiconductor chip 1~
It is connected to the power supply electrode 4, power supply electrode pad 8, and internal wiring 10, so that power and ground can be supplied to the semiconductor chip 1. The power supply/ground supply route is almost the shortest route, and the resistance can be lower than that using leads.

次に、第2図において半導体チップ1には周辺部に信号
用として112本のリード3°がバンプ2に接着されて
おり、リード3を介して外部と接続できるようになって
いる。そして、半導体チップ1の表面中央部には電源・
グランド用として64個の電源電極5が形成されている
Next, in FIG. 2, 112 leads 3° for signals are bonded to bumps 2 on the periphery of the semiconductor chip 1, so that it can be connected to the outside via leads 3. The central part of the surface of the semiconductor chip 1 is provided with a power source.
Sixty-four power supply electrodes 5 are formed for ground.

従来のパッケージでは112本のリードのうち電源・グ
ランド供給用として50本のリードが必要となり、信号
用としては62本しか使用することができない、しかし
、本実施例によれば信号用として112本のリードが使
用可能となる。
In a conventional package, out of 112 leads, 50 are required for power supply and ground supply, and only 62 leads can be used for signals.However, according to this embodiment, 112 leads are used for signals. leads become available.

なお、チップ1にはヒートシンク5が接着されている。Note that a heat sink 5 is bonded to the chip 1.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、半導体部品の表面の中央
部に電源およびグランドの電極を形成し、電源およびグ
ランドの供給を前記電極から行うことによって半導体部
品の周辺部に接続されたリードを全て信号用として使用
することができ、信号用のリード数を増加させることが
できるという効果がある。また、グランド・電源供給部
の抵抗を小さくできるという効果がある。
As explained above, the present invention forms power and ground electrodes in the center of the surface of a semiconductor component, and supplies power and ground from the electrodes, thereby connecting all leads connected to the periphery of the semiconductor component. It can be used for signals and has the effect of increasing the number of leads for signals. Further, there is an effect that the resistance of the ground/power supply section can be reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す断面図、第2図は第1
図に示す実施例に使用した半導体チップ1の平面図、第
3図は従来のチップパッケージを示す断面図である。 1.12・・・半導体部品、2,14・・・バンブ、3
,13・・・リード、4・・・電源電極、8・・・電源
電極用パッド、7,15・・・リード用パッド、5,2
゜・・・ヒートシンク、6.17・・・基板、1o・・
・内部配線、11.18・・・入出力端子。
FIG. 1 is a sectional view showing one embodiment of the present invention, and FIG.
FIG. 3 is a plan view of the semiconductor chip 1 used in the embodiment shown in the figure, and a cross-sectional view showing a conventional chip package. 1.12...Semiconductor parts, 2,14...Bumps, 3
, 13... Lead, 4... Power supply electrode, 8... Power supply electrode pad, 7, 15... Lead pad, 5, 2
゜... Heat sink, 6.17... Board, 1o...
・Internal wiring, 11.18...Input/output terminals.

Claims (1)

【特許請求の範囲】[Claims] 回路面の周辺部にバンプが形成され前記回路面の中央部
に電源供給用の電源電極が形成された半導体チップと、
前記電源電極に接続される電極用パッドが表面の中央部
に設けられ前記表面の周辺部にリード用パッドが設けら
れ裏面に入出力端子が設けられこの入出力端子と前記電
極用パッドまたは前記リード用パッドとを接続する内部
配線が内部に設けられた配線基板と、前記バンプおよび
前記リード用バンプに接続されたリードとを含むことを
特徴とするチップパッケージ。
a semiconductor chip in which bumps are formed on the periphery of a circuit surface and a power supply electrode for power supply is formed in the center of the circuit surface;
An electrode pad connected to the power supply electrode is provided at the center of the front surface, a lead pad is provided at the periphery of the front surface, and an input/output terminal is provided at the back surface, and the input/output terminal and the electrode pad or the lead are provided on the back surface. What is claimed is: 1. A chip package comprising: a wiring board having internal wiring provided therein for connecting to a lead pad; and a lead connected to the bump and the lead bump.
JP1077214A 1989-03-28 1989-03-28 Chip package Pending JPH02254747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1077214A JPH02254747A (en) 1989-03-28 1989-03-28 Chip package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1077214A JPH02254747A (en) 1989-03-28 1989-03-28 Chip package

Publications (1)

Publication Number Publication Date
JPH02254747A true JPH02254747A (en) 1990-10-15

Family

ID=13627587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1077214A Pending JPH02254747A (en) 1989-03-28 1989-03-28 Chip package

Country Status (1)

Country Link
JP (1) JPH02254747A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808357A (en) * 1992-06-02 1998-09-15 Fujitsu Limited Semiconductor device having resin encapsulated package structure
US6608379B2 (en) * 2001-11-02 2003-08-19 Institute Of Microelectronics, Et Al. Enhanced chip scale package for flip chips

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5808357A (en) * 1992-06-02 1998-09-15 Fujitsu Limited Semiconductor device having resin encapsulated package structure
US6031280A (en) * 1992-06-02 2000-02-29 Fujitsu Limited Semiconductor device having resin encapsulated package structure
US6271583B1 (en) 1992-06-02 2001-08-07 Fujitsu Limited Semiconductor device having resin encapsulated package structure
US6608379B2 (en) * 2001-11-02 2003-08-19 Institute Of Microelectronics, Et Al. Enhanced chip scale package for flip chips

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