JPH02252649A - Dielectric porcelain composition - Google Patents
Dielectric porcelain compositionInfo
- Publication number
- JPH02252649A JPH02252649A JP1074573A JP7457389A JPH02252649A JP H02252649 A JPH02252649 A JP H02252649A JP 1074573 A JP1074573 A JP 1074573A JP 7457389 A JP7457389 A JP 7457389A JP H02252649 A JPH02252649 A JP H02252649A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- composition
- dielectric
- present
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 31
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 4
- 229910052788 barium Inorganic materials 0.000 claims abstract description 6
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 5
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 5
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 3
- 239000000919 ceramic Substances 0.000 claims description 12
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 abstract description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract description 7
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011230 binding agent Substances 0.000 abstract description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 abstract description 4
- 235000010216 calcium carbonate Nutrition 0.000 abstract description 4
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 abstract description 4
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 abstract description 4
- 238000001354 calcination Methods 0.000 abstract description 3
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 abstract description 3
- 239000000843 powder Substances 0.000 abstract description 3
- 229910000018 strontium carbonate Inorganic materials 0.000 abstract description 3
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 abstract 4
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract 2
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 abstract 2
- 229910019714 Nb2O3 Inorganic materials 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 10
- 238000005245 sintering Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000011575 calcium Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 244000062175 Fittonia argyroneura Species 0.000 description 1
- 229910017676 MgTiO3 Inorganic materials 0.000 description 1
- 102100033979 Protein strawberry notch homolog 1 Human genes 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 silver thread Chemical class 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［Ｉｌｌ上上利用分野］
本発明は誘電体磁器組成物に係り、特に低温焼結が可能
で、高誘電率かつ低損失であることから、例えば小型大
容量の積層コンデンサ等の誘電体材料として好適な誘電
体磁器組成物に関する。[Detailed Description of the Invention] [Field of Application] The present invention relates to a dielectric ceramic composition, which can be sintered at a low temperature, has a high dielectric constant, and has a low loss. The present invention relates to a dielectric ceramic composition suitable as a dielectric material for capacitors and the like.
［従来の技術］
従来、高誘電率磁器組成物としては、チタン酸バリウム
（ＢａＴｉＯｓ）を主体とする組成物が一般に使用され
ている。即ち、ＢａＴｉＯｓを基体とし、これにキュリ
ー点を室温付近に移動させるシフター剤と容量温度特性
を改善するデブレッサ剤、さらに焼結促進剤、還元防止
剤などを加えた組成とするのが一般的である。[Prior Art] Conventionally, as a high dielectric constant ceramic composition, a composition mainly composed of barium titanate (BaTiOs) has been generally used. That is, the composition is generally made of BaTiOs as a base, to which are added a shifter agent that moves the Curie point to around room temperature, a depressor agent that improves the capacitance-temperature characteristics, and a sintering accelerator, reduction inhibitor, etc. be.
シフター剤としては、ＢａＴｉＯｓ、ＢａＺｒ０１
、 ＣａＺｒＯｓ 、 Ｃａ１ｎ’５ＳｒＴｔＯ
ｓ ＰｂＴｉＯｓ、 ＬａａＯ３。As a shifter agent, BaTiOs, BaZr01
, CaZrOs, Ca1n'5SrTtO
sPbTiOs, LaaO3.
ＣｅＯ２などが用いられ、デブレッサ剤としては、Ｃａ
ＴｌＯｓ 、ＭｇＴｉＯ３，−Ｂｉ２（ＳｎＯｓ）ｓ、
Ｂｉ２ （ＴｉＯｓ）ｓＮｉＳｎＯ３，ＭｇＺｒＯｓ、
ＭｇＳｎＯ３などが用いられている。また焼結促進剤と
しては、Ａｌ２Ｏ３ＳｉＯ２，ＺｎＯ，ＣｅＯ２゜Ｂ２
０ｓ 、Ｎｂ２０５．ＷＯ２などが用いられ、還元防止
剤としては、ＭｎＯ２，Ｆｅ２Ｏ２゜ＣｕＯなどが用い
られている。CeO2 etc. are used, and as a depressor agent, Ca
TlOs, MgTiO3, -Bi2(SnOs)s,
Bi2 (TiOs)sNiSnO3, MgZrOs,
MgSnO3 and the like are used. In addition, as a sintering accelerator, Al2O3SiO2, ZnO, CeO2゜B2
0s, Nb205. WO2, etc. are used, and as reduction inhibitors, MnO2, Fe2O2°CuO, etc. are used.
［発明が解決しようとする課題］
しかしながら、ＢａＴｉＯ３を主体とする組成物は焼結
温度が１３００〜１４００℃の高温であるため、焼成コ
ストが高く、特にこれを積層コンデンサとして利用する
場合には内部電極として、パラジウム、白金などの高価
な貴金属を用いなければならず、積層コンデンサのコス
ト低減の大きな問題点になっていた。[Problems to be Solved by the Invention] However, since the sintering temperature of a composition mainly composed of BaTiO3 is 1,300 to 1,400°C, the sintering cost is high, and especially when it is used as a multilayer capacitor, the internal Expensive noble metals such as palladium and platinum must be used as electrodes, which has been a major problem in reducing the cost of multilayer capacitors.
しかも、Ｂ ａ Ｔ ｉ Ｏ３を主体とする組成物の誘
電率は最高でもｔｏｏｏｏ程度であるため、小型大容量
の積層コンデンサを得るには層数を多くしなければなら
ず、やはり、製造コスト低減の大きな障害となつていた
。Moreover, since the dielectric constant of a composition mainly composed of B a Ti O3 is at most too low, the number of layers must be increased in order to obtain a small, large-capacity multilayer capacitor, which also reduces manufacturing costs. This had become a major obstacle.
このようなことから、内部電極として安価なＡｇを主成
分とする電極を使用することができ、しかも、暦数を少
なく抑えて積層コンデンサの製造コストを低減し得る、
低温焼結が可能な高話電率誘電体材料の出現が要望され
ている。For this reason, it is possible to use an inexpensive electrode mainly composed of Ag as the internal electrode, and furthermore, it is possible to reduce the number of calendars and reduce the manufacturing cost of the multilayer capacitor.
There is a need for a high electrical constant dielectric material that can be sintered at low temperatures.
本発明は上記従来の実情に鑑みてなされたものであって
、低温焼結が可能で、誘電率が高く、しかも誘電損失（
ｔａｎδ）が小さく、小型大容量の積層コンデンサ等を
低コストで製造することを可能とする誘電体磁器組成物
を提供することを目的とする。The present invention has been made in view of the above-mentioned conventional circumstances, and is capable of low-temperature sintering, has a high dielectric constant, and has low dielectric loss.
An object of the present invention is to provide a dielectric ceramic composition that has a small tan δ) and that enables manufacturing of small-sized, large-capacity multilayer capacitors, etc. at low cost.
［課題を解決するための手段及び作用］本発明の誘電体
磁器組成物は、Ｐｂ（Ｆｅ＋ｚ２ＮｂＩ／＊ ）Ｏｓ、
ｐｂ （Ｚｎｔ／ｓ Ｎｂ２／ｓ ）Ｏ：１及びＰ ｂ
（Ｍ１／２ Ｗ１／２ ） ０３の３成分を主成分と
して含む組成物において、ｐｂ原子の一部をＣａ、Ｂａ
及びＳｒよりなる群から選ばれる少なくとも１種の原子
で置換したものであって、−数式（Ｉ）
（Ｐ ｂ＋−ａ Ｒａ ） ［（Ｆ ｅｓ／ｚ Ｎ
ｂｕｚ２） １−ｂ−ｃＣＺｎ１／ｓ Ｎｂ２７ｓ ）
ｂ
（Ｍ１／２ Ｗ＋／２ ） ｃ ］ Ｏｓ・−（１）
（ＲはＣａ、Ｂａ及びＳｒよりなる群から選ばれる少な
くとも１種、ＭはＺｎ、Ｍｇ及びＮｉよりなる群から選
ばれる少なくとも１種）
で表わした場合、
０．００＜ａ＜０．１０
０．００＜ｂ＋ｅ＜０．５０
となるものである。[Means and effects for solving the problems] The dielectric ceramic composition of the present invention includes Pb(Fe+z2NbI/*)Os,
pb (Znt/s Nb2/s)O:1 and Pb
(M1/2 W1/2) In a composition containing the three components of 03 as main components, some of the pb atoms are replaced with Ca, Ba
and Sr, which is substituted with at least one atom selected from the group consisting of
buz2) 1-b-cCZn1/s Nb27s)
b (M1/2 W+/2) c ] Os・−(1) (R is at least one selected from the group consisting of Ca, Ba and Sr, M is at least one selected from the group consisting of Zn, Mg and Ni 0.00<a<0.10 0.00<b+e<0.50.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
まず、本発明の誘電体磁器組成物の組成域の限定理由に
ついて説明する。First, the reason for limiting the composition range of the dielectric ceramic composition of the present invention will be explained.
前記（Ｉ）式中、ａが０．００であると誘電率の温度変
化が急激になり、ａが０．１０以上であると誘電率のピ
ークが著しく低温側に移行するため誘電率が小さくなる
。このため、ａの値の範囲は０．００＜ａ＜１．００と
する。In the above formula (I), if a is 0.00, the temperature change in the dielectric constant will be rapid, and if a is 0.10 or more, the peak of the dielectric constant will shift significantly to the low temperature side, resulting in a small dielectric constant. Become. Therefore, the range of the value of a is 0.00<a<1.00.
また、前記（Ｉ）式中、ｂ≧０．５０を満たす領域にお
いては、通常の固相反応ではへロブスカイト構造になら
ないＰ ｂ （Ｚ ｎ １／ｓ Ｎ ｂ ２／３ ）０
３が主組成となり、誘電率が低下する。また、Ｃ２０，
５０を満たす領、域においては、反強誘電体であるＰ
ｂ （Ｍｉ／ｚ Ｗｘ／ｚ ） Ｏｓ （但し、Ｍは
前記の通り）が主組成となり、誘電率が低下する。更に
、ｂ＋ｃ≧０．５０かつｂｏｏ、５０、ｃ＜０．５を満
たす領域においては、前述の二つの要因が共存するため
、やはり誘電率が低下する。このため、ｂ＋ｃ＜０．５
０でなければならない、また、ｂ＋ｃｗｏのときは、ｐ
ｂ（Ｆ ６ １／２ Ｎ ｂ １／２ ） ０３のｐｂ
をＲ（Ｒは前記の通り）で置換した組成となり、良好な
電気特性が得られない、このため、０．００＜ｂ＋ｃと
する。In addition, in the region where b≧0.50 is satisfied in the formula (I), the herovskite structure is not formed by normal solid phase reaction P b (Z n 1/s N b 2/3 )0
3 becomes the main composition, and the dielectric constant decreases. Also, C20,
In the region satisfying 50, P, which is an antiferroelectric material,
b (Mi/z Wx/z ) Os (where M is as described above) becomes the main composition, and the dielectric constant decreases. Furthermore, in the region where b+c≧0.50 and boo, 50, c<0.5 are satisfied, the two factors described above coexist, so that the dielectric constant also decreases. Therefore, b+c<0.5
Must be 0, and when b+cwo, p
b (F 6 1/2 N b 1/2 ) 03 pb
is substituted with R (R is as described above), and good electrical characteristics cannot be obtained. Therefore, 0.00<b+c.
本発明においては、特に ０．００≦ｂ≦０．２０ ０ 、００ ≦Ｃ≦０ 、２０ であることが好ましい。In the present invention, especially 0.00≦b≦0.20 0, 00≦C≦0, 20 It is preferable that
このような本発明の誘電体磁器組成物を製造するには、
例えば、−酸化鉛、炭酸カルシウム、炭酸バリウム、炭
酸ストロンチウム、酸化第二鉄、五酸化ニオブ、酸化亜
鉛、酸化マグネシウム、炭酸ニッケル、三酸化タングス
テン等の粉末を所定の割合となるよう秤量し、湿式ボー
ルミル等を用いて十分に混合する０次にこの混合物を乾
燥した後、必要に応じ、６００〜８００℃の範囲で数時
間程度仮焼する。この仮焼は必ずしも行なう必要はない
が、これを行なうことにより粒子がより均一化され、誘
電特性が向上する傾向がある。仮焼を行なった場合には
、仮焼物を更に湿式ボールミル等で粉砕し、乾燥後、ポ
リビニルアルコールなどの適当な有機バインダを加えて
、顆粒を作り、これを所定の形状にプレス成形した後、
焼成を行なう。この焼成は、７５０〜１０００℃の温度
範囲で０．５〜数時間程度行なう、（勿論、これらの製
造条件は最も好適な数値であって、本発明の磁器組成物
は上記以外の条件もしくは方法によって製造されても良
い、）
［実施例］
以下に本発明を実施例を挙げて更に具体的に説明するが
、本発明はその要旨を超えない限り、以下の実施例に限
定されるものではない。To produce such a dielectric ceramic composition of the present invention,
For example, - powders of lead oxide, calcium carbonate, barium carbonate, strontium carbonate, ferric oxide, niobium pentoxide, zinc oxide, magnesium oxide, nickel carbonate, tungsten trioxide, etc. are weighed in a predetermined proportion and wet-processed. The mixture is thoroughly mixed using a ball mill or the like. After drying, the mixture is calcined at a temperature of 600 to 800° C. for several hours, if necessary. Although it is not necessary to perform this calcination, it tends to make the particles more uniform and improve the dielectric properties. In the case of calcining, the calcined product is further pulverized using a wet ball mill, etc. After drying, a suitable organic binder such as polyvinyl alcohol is added to form granules, which are then press-molded into a predetermined shape.
Perform firing. This firing is performed at a temperature range of 750 to 1000°C for about 0.5 to several hours (of course, these manufacturing conditions are the most suitable values, and the porcelain composition of the present invention can be produced under conditions or methods other than the above). ) [Examples] The present invention will be described in more detail below with reference to Examples, but the present invention is not limited to the following Examples unless it exceeds the gist thereof. do not have.
実施例１
出発原料としてＰｂＯ，ＣａＣＯ３、ＢａＣＯ５，５ｒ
ＣＯｓ 、Ｆ６ａ Ｏｓ 、Ｎｂ２Ｏ５。Example 1 PbO, CaCO3, BaCO5,5r as starting materials
COs, F6aOs, Nb2O5.
ＺｎＯ，ＭｇＯ，Ｎ ｉ Ｃｏｓ及びＷ Ｏｓを使用し
、これらを第１表に示す配合比となるように秤量し、ボ
ールミル中で純水と共に約２０時同温式混合した１次い
で混合物を脱水、乾燥後、７００〜７５０℃で２時間保
持して仮焼し、再びボールミル中で純水と共に約２０時
同温式粉砕した後、脱水、乾燥した。Using ZnO, MgO, NiCos, and WOs, these were weighed so as to have the compounding ratio shown in Table 1, and mixed in a ball mill with pure water for about 20 hours at the same time.Then, the mixture was dehydrated. After drying, it was calcined by holding at 700 to 750°C for 2 hours, and wasothermally pulverized with pure water in a ball mill for about 20 hours, followed by dehydration and drying.
得られた粉末にポリビニルアルコール水溶液（バインダ
）を加え、成形圧力的２ ｔ ｏ ｎ ／ ｅ ｒｒｆ
で、直径的１５ｍｍ、厚さ約０．７ｍｍの円板に加圧成
形した。この成形物を約６００℃で１時間保持してバイ
ンダを除いた後、マグネシア磁器容器に入れて、第１表
に示す温度で３時間焼成した。A polyvinyl alcohol aqueous solution (binder) was added to the obtained powder, and the molding pressure was 2 ton/e rrf.
Then, it was pressure-molded into a disc with a diameter of 15 mm and a thickness of about 0.7 mm. This molded product was held at about 600° C. for 1 hour to remove the binder, then placed in a magnesia porcelain container and fired at the temperature shown in Table 1 for 3 hours.
得られた焼結体の両面に、銀電極を６５０〜７００℃で
焼付けて平行平板コンデンサとし、その電気特性を調べ
た。Silver electrodes were baked on both sides of the obtained sintered body at 650 to 700°C to form a parallel plate capacitor, and its electrical properties were investigated.
結果を第１表に示す。The results are shown in Table 1.
なお、誘電率及び誘電損失はＹＨＰデジタルＬＣＲメー
タモデル４２７４Ａを用い、測定周波数ＩＫＨｚ、測定
電圧１．ＯＶｒｍｓ、温度２５℃にて測定した。また、
絶縁抵抗はＹＨＰアナログＩＲメータ４３２９Ａを使用
し、温度２５℃で印加電圧１００Ｖにて、１分後の値を
測定した。Note that the dielectric constant and dielectric loss were measured using YHP digital LCR meter model 4274A, with a measurement frequency of IKHz and a measurement voltage of 1. OVrms was measured at a temperature of 25°C. Also,
The insulation resistance was measured using a YHP analog IR meter 4329A at a temperature of 25° C. and an applied voltage of 100 V after 1 minute.
第１表からも明らかなように、本発明の範囲内の組成物
は、いずれも誘電率が高く、誘電損失が低く、しかも、
容量抵抗積も比較的大きいという優れた電気特性を示し
、その上、焼結温度が低いという利点も有している。As is clear from Table 1, all of the compositions within the scope of the present invention have a high dielectric constant, a low dielectric loss, and
It exhibits excellent electrical properties with a relatively large capacitance-resistance product, and also has the advantage of a low sintering temperature.
［発明の効果］
以上詳述した通り、本発明の誘電体磁器組成物は、誘電
率が高く誘電損失が低く、かつ、容量抵抗積も大きい、
このため、本発明の誘電体磁器組成物を用いることによ
り、信頼性の高い小型で大容量のコンデンサを得ること
ができる。[Effects of the Invention] As detailed above, the dielectric ceramic composition of the present invention has a high dielectric constant, low dielectric loss, and a large capacitance-resistance product.
Therefore, by using the dielectric ceramic composition of the present invention, it is possible to obtain a highly reliable, compact, and large-capacity capacitor.
しかも、本発明の誘電体磁器組成物は、焼結温度が低い
ため、焼成コストが安価で、積層コンデンサに用いた場
合、内部電極に高価なパラジウムや白金などの貴金属を
使用することなく、比較的安価な銀糸等の金属を使用す
ることができる。このため、積層コンデンサの製造コス
トを低下させ、その価格を大幅に低減することができる
。Moreover, since the dielectric ceramic composition of the present invention has a low sintering temperature, the firing cost is low, and when used in a multilayer capacitor, it can be used without using expensive noble metals such as palladium or platinum for the internal electrodes. Metals such as silver thread, which are relatively inexpensive, can be used. Therefore, the manufacturing cost of the multilayer capacitor can be reduced, and its price can be significantly reduced.
ｌ 事件の表示
平成１年特許願第７４５７３号
２ 発明の名称
誘電体磁器組成物
３ 補正をする者
事件との関係 特許出願人
名 称 三菱鉱業セメント株式会社４ 代理人
住 所 東京都港区虎ノ門１丁目１５番７号〒１０５
ＴＧ１１５ビル ８階l Indication of the case 1999 Patent Application No. 74573 2 Name of the invention Dielectric ceramic composition 3 Relationship with the case by the person making the amendment Patent applicant name Mitsubishi Mining Cement Co., Ltd. 4 Agent address 1 Toranomon, Minato-ku, Tokyo Chome 15-7 〒105
TG115 Building 8th floor
Claims (1)
３，Ｐｂ（Ｚｎ＿１＿／＿３Ｎｂ＿２＿／＿３）Ｏ＿３
及びＰｂ（Ｍ＿１＿／＿２Ｗ＿１＿／＿２）Ｏ＿３を主
成分として含み、下記一般式（Ｉ） （Ｐｂ＿１＿−＿ａＲ＿ａ）［（Ｆｅ＿１＿／＿２Ｎｂ
＿１＿／＿２）＿１＿−＿ｂ＿−＿ｃ（Ｚｎ＿１＿／＿
３Ｎｂ＿２＿／＿３）＿ｂ（Ｍ＿１＿／＿２Ｗ＿１＿／
＿２）＿ｃ］Ｏ＿３・・・ （Ｉ） 〔式中、ＲはＣａ，Ｂａ及びＳｒよりな る群から選ばれる少なくとも１種 ＭはＺｎ，Ｍｇ及びＮｉよりなる群か ら選ばれる少なくとも１種 ａ，ｂ及びｃは ０．００＜ａ＜０．１０ ０．００＜ｂ＋ｃ＜０．５０ を満たす正数〕 で表わされるように、Ｐｂ原子のうちの一部を、Ｃａ，
Ｂａ及びＳｒよりなる群から選ばれる少なくとも１種の
原子で置換した組成を有することを特徴とする誘電体磁
器組成物。(1) Pb(Fe_1_/_2Nb_1_/_2)O_
3, Pb(Zn_1_/_3Nb_2_/_3)O_3
and Pb(M_1_/_2W_1_/_2)O_3 as main components, and has the following general formula (I) (Pb_1_-_aR_a) [(Fe_1_/_2Nb
_1_/_2)_1_-_b_-_c(Zn_1_/_
3Nb_2_/_3)_b(M_1_/_2W_1_/
_2)_c]O_3... (I) [wherein, R is at least one kind selected from the group consisting of Ca, Ba and Sr; M is at least one kind selected from the group consisting of Zn, Mg and Ni a, b and c is a positive number satisfying 0.00<a<0.10 0.00<b+c<0.50], some of the Pb atoms are replaced by Ca,
A dielectric ceramic composition characterized in that it has a composition in which at least one atom selected from the group consisting of Ba and Sr is substituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1074573A JPH0637322B2 (en) | 1989-03-27 | 1989-03-27 | Dielectric porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1074573A JPH0637322B2 (en) | 1989-03-27 | 1989-03-27 | Dielectric porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02252649A true JPH02252649A (en) | 1990-10-11 |
| JPH0637322B2 JPH0637322B2 (en) | 1994-05-18 |
Family
ID=13551072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1074573A Expired - Lifetime JPH0637322B2 (en) | 1989-03-27 | 1989-03-27 | Dielectric porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0637322B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04243952A (en) * | 1991-01-31 | 1992-09-01 | Nec Corp | Ceramic composition |
| CN101792319A (en) * | 2010-04-07 | 2010-08-04 | 陕西科技大学 | Preparation method of low temperature sintered magnetoelectric composite ceramic material |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107473743A (en) * | 2017-09-15 | 2017-12-15 | 西安交通大学 | A kind of lead base high-K capacitor dielectric material and preparation method thereof |
-
1989
- 1989-03-27 JP JP1074573A patent/JPH0637322B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04243952A (en) * | 1991-01-31 | 1992-09-01 | Nec Corp | Ceramic composition |
| CN101792319A (en) * | 2010-04-07 | 2010-08-04 | 陕西科技大学 | Preparation method of low temperature sintered magnetoelectric composite ceramic material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0637322B2 (en) | 1994-05-18 |
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