JPH0244061A - Dielectric magnetic composite and its production - Google Patents
Dielectric magnetic composite and its productionInfo
- Publication number
- JPH0244061A JPH0244061A JP63194070A JP19407088A JPH0244061A JP H0244061 A JPH0244061 A JP H0244061A JP 63194070 A JP63194070 A JP 63194070A JP 19407088 A JP19407088 A JP 19407088A JP H0244061 A JPH0244061 A JP H0244061A
- Authority
- JP
- Japan
- Prior art keywords
- parts
- mgo
- nio
- zno
- nb2o5
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002131 composite material Substances 0.000 title abstract 4
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 239000000843 powder Substances 0.000 claims abstract description 10
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 229910052788 barium Inorganic materials 0.000 claims abstract description 4
- 239000000919 ceramic Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 3
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 11
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract description 10
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 abstract 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 229910052573 porcelain Inorganic materials 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、誘電率の温度変化が小さい誘電体磁器組成物
およびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a dielectric ceramic composition whose dielectric constant changes little with temperature, and a method for manufacturing the same.
従来の技術
従来より高誘電率系セラミックコンデンサ用の誘電体材
料として、チタン酸バリウム系の磁器組成物が広く用い
られている。チタン酸バリウム系の磁器組成物の中でも
誘電率の温度変化が小さい材料、すなわちＪＴＳ規格の
ＹＢ特性やＥＩＡ規格のＸ７Ｒ特性を満たす材料は、市
場規模も大きく、Ｂ ａ Ｔ ｉ ０３− Ｍ ｎ ０
２− Ｎ ｂ ２０５系（特開昭５１−７６５９７）、
ＢａＴｉ０ｔ−ビスマス系を初め、数多くの組成物が知
られている。また、近年のセラミック積層コンデンサに
対する小型大容量化の要求に応えるために誘電体材料の
高誘電率化が急激な勢いで進んでいる。ゆえに、高誘電
率で、誘電率の温度変化が小ざい材料に対する需要は、
ますます人きくなっている。2. Description of the Related Art Barium titanate-based ceramic compositions have been widely used as dielectric materials for high-permittivity ceramic capacitors. Among barium titanate-based porcelain compositions, materials with a small temperature change in dielectric constant, that is, materials that meet the YB characteristics of the JTS standard and the X7R characteristics of the EIA standard, have a large market size, and B a T i 03- M n 0
2-N b 205 series (JP-A-51-76597),
Many compositions are known, including the BaTi0t-bismuth system. In addition, in order to meet the recent demand for smaller size and larger capacity ceramic multilayer capacitors, dielectric materials with higher dielectric constants are rapidly increasing. Therefore, the demand for materials with high dielectric constant and small temperature change in dielectric constant is
He's becoming more and more personable.
発明が解決しようとする課題
特に、Ｂ ａ Ｔ ｉ ０３− Ｎ ｂ ２０５系にＮ
ｉＯ，ＺｎＯ１およびＭｇＯのうちのいずれか一種以上
を加えたの誘゛市体磁器は上記の需要に応えうるもので
あるが、通常の組成、すなわちＢａＴｉＯ３（モル比）
、あるいは通常の製造方法では、得られる焼結体の表面
に板状あるいは針状の二次相が析出する。この二次相が
積層コンデンサを作成した時、素子表面に析出し、外部
電極と内部電極の接触不良や、はんだメツキののびによ
る外部電極の短絡等を発生させ、不良の原因となってい
た。Problems to be solved by the invention In particular, N a T i 03- N b 205 series
Induced municipal porcelain containing one or more of iO, ZnO1 and MgO can meet the above demand, but it has a normal composition, that is, BaTiO3 (molar ratio).
Alternatively, in a normal manufacturing method, a plate-like or needle-like secondary phase is precipitated on the surface of the obtained sintered body. When creating multilayer capacitors, this secondary phase precipitates on the device surface, causing poor contact between the external and internal electrodes and shorting of the external electrodes due to spread of solder plating, causing defects.
本発明は、上記従来の技術の課題を解決することを目的
とする。The present invention aims to solve the problems of the above-mentioned conventional techniques.
課題を解決するための手段
本発明は、Ｂａ／Ｔｉ（モル比）が１より太きいチタン
酸酸バリウムに対し、特定量のＮｂ２Ｏ５、及びＮｉＯ
，ＺｎＯ１およびＭｇＯのうちのいずれか一種以上を含
む誘電体磁器組成物とする。また、さらに５ｉｎ２、Ｃ
ｅＯ２、およびＢｉ２Ｏ３のうちのいずれか一種以上を
特定量加える。Means for Solving the Problems The present invention provides barium titanate with a Ba/Ti (molar ratio) greater than 1, a specific amount of Nb2O5 and NiO
, ZnO1, and MgO. In addition, 5in2, C
A specific amount of one or more of eO2 and Bi2O3 is added.
上記磁器の製造方法として、おらかしめ仮焼したＢａＴ
ｉＯ３粉末に、ＢａおよびＮｂを主成分とする化合物の
混合物を熱処理して得たＢａ５Ｎｂ４０＋５と、ＢａＣ
Ｏ３、Ｎｂ２Ｏ５、および、 ＮｉＯ、ＺｎＯ、および
Ｍ ｇ Ｏのうちのいずれか一種以−Ｌを加えた混合物
を焼成する。As a manufacturing method for the above porcelain, BaT is calcined and calcined.
Ba5Nb40+5 obtained by heat-treating iO3 powder with a mixture of compounds mainly composed of Ba and Nb, and BaC
A mixture containing O3, Nb2O5, and one or more of NiO, ZnO, and MgO is fired.
作用
請求項１記載の本発明の誘電体磁器組成物によると、組
成を限定しているため、誘電５がが３０００以上で、誘
電率の温度特性がＪＩＳ規格のＹＢ特性およびＥＩＡ規
格のＸ７Ｒ特性を満たす。According to the dielectric ceramic composition of the present invention as set forth in claim 1, since the composition is limited, the dielectric 5 is 3000 or more, and the temperature characteristics of the dielectric constant are YB characteristics according to the JIS standard and X7R characteristics according to the EIA standard. satisfy.
請求項２の本発明の誘電体磁器組成物によると、特定の
添加物を加えることにより焼結温度を低下させることが
できる。According to the dielectric ceramic composition of the second aspect of the present invention, the sintering temperature can be lowered by adding a specific additive.
請求項３の本発明の誘電体磁器製造方法によると、加え
るＮｂの一部或は全部がＢａ５Ｎｂ４０＋ｓとなってい
るため、Ｎ ＋）がＢａＴｉＯ３結晶中に拡散する際に
発生する二次相の生成を抑制する。According to the dielectric ceramic manufacturing method of the present invention as claimed in claim 3, since a part or all of the Nb added is Ba5Nb40+s, the formation of a secondary phase that occurs when N+) diffuses into the BaTiO3 crystal. suppress.
実施例 以下に、本発明の詳細な説明する。Example The present invention will be explained in detail below.
実施例１
本実施例は請求項１および３記戎の発明に対応し、Ｂａ
／Ｔｉ（モル比）を１より大きくし、おらかしめＮｂの
一部あるいは全部をＢａと反応させて加え、さらに添加
物の漬を限定することにより、課題を解決したものであ
る。Example 1 This example corresponds to the invention of claims 1 and 3, and
/Ti (molar ratio) was made larger than 1, a part or all of the diluted Nb was added by reacting with Ba, and the problem was solved by limiting the amount of additives.
出発原料のＢａＴｉＯ３粉末として、水熱法により得た
粒径０．０５７１ｍ、純度９９．９％以上のＢａＴｉ０
３ｐ粉末を１０５０℃で粉体仮焼したものを用いた。Ｎ
ｂ２Ｏ５、およびＢ ａ ＣＯ３からＢａ／Ｎｂ＝５／
４（モル比）の割合になるように秤量し、直径６ｍｔｎ
のジルコニア製玉石によりボールミルで１７ ｂ ｒ混
合した。溶媒は純水を用いた。溶媒を乾燥させて得た粉
末をムライト製磁器るつぼに入れ、１１００℃で２ｈｒ
熱処理な行ない反応させた。粉末Ｘ線回折により得られ
た結晶相はＢａ５Ｎｂ４０＋５弔−相てあった。Ｂ ａ
５Ｎ ｂ ４０＋５． Ｂ ａｃＯｔ、 Ｎ ｂ２０
５、ＮｉＯ，ＺｎＯ１およびＭｇＯのうち必要なものを
種々の割合て上記のＢａＴｉＯ３粉末に加え、直径６ｍ
ｍのジルコニア製玉石によりボールミルで１７ｈ＋・混
合した。As BaTiO3 powder as a starting material, BaTi0 with a particle size of 0.0571 m and a purity of 99.9% or more obtained by a hydrothermal method was used.
3p powder calcined at 1050°C was used. N
b2O5, and Ba CO3 to Ba/Nb=5/
4 (molar ratio), and a diameter of 6 mtn.
The mixture was mixed in a ball mill with 17 br of zirconia cobblestones. Pure water was used as the solvent. The powder obtained by drying the solvent was placed in a mullite porcelain crucible and heated at 1100°C for 2 hours.
Heat treatment was performed to cause a reaction. The crystal phase obtained by powder X-ray diffraction was a Ba5Nb40+5 phase. B a
5N b 40+5. BacOt, Nb20
5. Add the necessary ones among NiO, ZnO1 and MgO in various proportions to the above BaTiO3 powder, and make a powder with a diameter of 6 m.
The mixture was mixed for 17 hours using a ball mill using zirconia cobblestones.
溶媒として純水を用いた。溶媒を乾燥させて得た粉末中
にバインダーとして３ｗｔ％のボリヒニルアルコールを
加え、３２メツシユのナイロン製のふるいを通して造粒
し、１１０００１（／ｃｍ２の圧力て、直径１４ｍｍ、
厚さ１．２ｍｍに加圧成形した。得られた円板を７
００℃で１ｈｒ−１呆持してバインダ成分をバーンアウ
トし、１３００−１４６０°Ｃで２ｈｒ保持して焼成し
た。焼結体の密度が最大となる温度を最適焼成温度とし
、以下の電気特性の評価を行なった。焼結体の両面にＣ
ｒ−Ａｕを蒸着して電極とした。誘電率、ｔａ口δを１
１（Ｈｚ、ＩＶ／ｍｍの交流電圧のもと、−６０℃から
１３０℃の温度範囲で測定した。抵抗率は、１ｋＶ／ｍ
ｍの電圧を印加して１分後の値から求めた。また、焼結
体表面のＳＥＭ写真から、板状あるいは針状に析出した
部分を二次相と判断し、面積を求め、焼結体の全表面積
に対する二次相の表面積の割合により、二次相の屑を評
価した。Pure water was used as a solvent. 3 wt% of polyhinyl alcohol was added as a binder to the powder obtained by drying the solvent, and the mixture was granulated through a 32-mesh nylon sieve to obtain a powder with a diameter of 14 mm at a pressure of 110,001 cm/cm
It was pressure molded to a thickness of 1.2 mm. The obtained disk is 7
The binder component was burnt out by holding at 00°C for 1 hr-1, and then it was fired by holding at 1300-1460°C for 2 hr. The temperature at which the density of the sintered body was maximized was set as the optimum firing temperature, and the following electrical properties were evaluated. C on both sides of the sintered body
r-Au was vapor-deposited to form an electrode. Dielectric constant, ta mouth δ is 1
Measured in the temperature range from -60°C to 130°C under an AC voltage of 1 (Hz, IV/mm).Resistivity is 1 kV/m
It was determined from the value 1 minute after applying a voltage of m. In addition, from the SEM photograph of the surface of the sintered body, plate-shaped or needle-shaped precipitated parts are determined to be the secondary phase, the area is determined, and the ratio of the surface area of the secondary phase to the total surface area of the sintered body is determined to be the secondary phase. Phase debris was evaluated.
第１表に結果を示す。組成の欄において、ＸおよびＹは
ＢａおよびＮｂの潰をＢａＯおよびＮｂＯ５７２にそれ
ぞれ換算したものを表わし、数値はＢａＴｉＯ３１００
モル部に対して加えたモル数を表わす。１４２０°Ｃ以
下の焼成で理論密度の９５％に達していないものは、焼
結せずとし、電気的特性の測定ζＪ省略した。ｔ ａ
ｎδについては、全ての試料について、０．３−１．０
％の範囲であったので省略した。Table 1 shows the results. In the composition column, X and Y represent the amounts of Ba and Nb converted into BaO and NbO572, respectively, and the numerical values are BaTiO3100.
Represents the number of moles added to mole parts. Those whose density did not reach 95% of the theoretical density when fired at 1420°C or lower were not sintered, and the measurement of electrical properties ζJ was omitted. ta
Regarding nδ, for all samples, 0.3-1.0
Since it was in the % range, it was omitted.
（以下余白）
第１人より、請求の＋ｒ！囲以外の組成では、誘電率が
３０００以上で、誘電率の温度特性がＪＩＳ規格のＹＢ
特性およびＥＲＡ規格のＸ７Ｒ特性を満たすという条件
を満足しなくなってしまい、実用的でないので、請求の
範囲から除外した。(Left below) From the first person, request +r! For compositions other than those listed below, the dielectric constant is 3000 or more, and the temperature characteristics of the dielectric constant are YB according to the JIS standard.
Since it no longer satisfies the characteristics and the condition of satisfying the X7R characteristics of the ERA standard and is not practical, it has been excluded from the scope of claims.
また、ＢａＴｉＯ３１００モル部に対して加えた全組成
のうち、１１ａｏのモル頃がＮ ｂ Ｏ５／２のモル噛
の０．２５１３より小さいと焼結体の表面に大量に二次
相が析出し１．５倍より大きいと焼結性が悪化した。ゆ
えに、請求の範囲から除外した。In addition, if the molar amount of 11ao is smaller than the molar value of NbO5/2, which is 0.2513 out of the total composition added to 100 mole parts of BaTiO3, a large amount of secondary phase will precipitate on the surface of the sintered body. When it was larger than .5 times, sinterability deteriorated. Therefore, it was excluded from the scope of claims.
実施例２
本実施例は請求項２記載の発明に対応し、特定の添加物
を特定ｊ４添加することにより課題を解決したものであ
る。Example 2 This example corresponds to the invention set forth in claim 2, and the problem was solved by adding specific additives.
実施例１と同様の方法により、出発原料のＢａ１”ｉｏ
ｌと、Ｉ３ ａｓＮ ｂ ４０＋ｓを合成した。Ｂ ａ
Ｔ ｉ（） ３１００モル部に対して、Ｂ ａＮｓＮ
ｂ４０＋５を、Ｂ ＦＬ ５−４ Ｎ ｂ Ｏ＋ｓ７
４に換算して２．４モル部、Ｎｉｐ。By the same method as in Example 1, the starting material Ba1"io
1 and I3 asN b 40+s were synthesized. B a
For 3100 mol parts of T i (), B aNsN
b40+5, B FL 5-4 N b O+s7
2.4 mole parts converted to 4, Nip.
Ｚ ｎ ＯｌおよびＭ ｇ Ｏをそれぞれ０．３モル部
、および種ノンの添加物を種ノンの漬加え、以下実施例
１と同様の方法により、焼結体を作成し、なった。A sintered body was prepared in the same manner as in Example 1 by adding 0.3 mole parts of each of ZnOl and MgO, and adding a seedless additive.
第２表に結果を示す。Table 2 shows the results.
（以下余白）
評価を行
第２表より、Ｎｏ、１の試料のように、添加物を加えな
い組成においては、その焼結温度が１３６０℃とかなり
高いのに対して、ＳｉＯ２、ＣｅＯ２、およびＢｉ２Ｏ
３のうちのいずれか一種以上をＢａＴｉＯ３に対して、
０．０２重重％以上加えることにより、焼結温度が１３
２０℃以下となった。(Left below) Table 2 shows that the sintering temperature is quite high at 1360°C for samples with no additives, such as sample No. 1, whereas the sintering temperature for SiO2, CeO2, Bi2O
Any one or more of 3 to BaTiO3,
By adding 0.02% by weight or more, the sintering temperature can be increased to 13% by weight.
The temperature was below 20°C.
１．６５重置火より多く加えると、焼結温度はさらに低
下するが、誘電率の温度変化が大きくなるため、請求の
範囲から除外した。If more than 1.65 times the sintering temperature is added, the sintering temperature will further decrease, but the temperature change in the dielectric constant will increase, so it is excluded from the scope of the claims.
発明の効果
本発明の誘電体磁器およびその製造方法によると、焼結
体表面に析出する二次相の発生を抑制することができ、
かつ、室温での誘電率が３０００以りで、誘電率の温度
変化がＪＩＳ規格のＹＢ特性およびＥＩＡ規格のＸ７Ｒ
特性を満たし、また絶縁抵抗率も高く、機械的強度も十
分で、セラミックコンデンサ用、特に、積層コンデンサ
用の誘電体材料として実用化が可能である。Effects of the Invention According to the dielectric porcelain and its manufacturing method of the present invention, it is possible to suppress the generation of secondary phases deposited on the surface of the sintered body,
In addition, the dielectric constant at room temperature is 3000 or more, and the temperature change in dielectric constant meets the YB characteristics of the JIS standard and the X7R of the EIA standard.
It satisfies the characteristics, has high insulation resistivity, and has sufficient mechanical strength, and can be put to practical use as a dielectric material for ceramic capacitors, especially multilayer capacitors.
Claims (3)
部に対し、Ｎｂ＿２Ｏ＿５をＮｂＯ＿５＿／＿２に換算
してｙモル部とするとき、 １．４≦ｙ≦３．２ ０．２５ｙ≦ｘ≦１．５ｙ の範囲含み、かつＮｉＯ、ＺｎＯ、およびＭｇＯのうち
のいずれか一種以上を少なくとも、０．４モル部以上１
．４モル部以下含むことを特徴とする誘電体磁器組成物
。(1) When converting Nb_2O_5 into NbO_5_/_2 to 100 mole parts of Ba_1_+_xTiO_3_+_x, y mole parts include the following ranges: 1.4≦y≦3.2 0.25y≦x≦1.5y, and NiO, At least 0.4 mole part or more of one or more of ZnO and MgO
．． A dielectric ceramic composition comprising 4 mole parts or less.
ちのいずれか一種以上を、Ｂａ＿１＿＋＿ｘＴｉＯ＿３
＿＋＿ｘ１００重量部に対して０．０２重量部以上１．
６５重量部以下の範囲で加えたことを特徴とする請求項
１記載の誘電体磁器組成物。(2) At least one of SiO_2, CeO_2 and Bi_2O_3 is added to Ba_1_+_xTiO_3
0.02 parts by weight or more per 100 parts by weight of ___+_x1.
The dielectric ceramic composition according to claim 1, characterized in that the amount added is 65 parts by weight or less.
、Ｚｎ、およびＭｇのうちのいずれか一種以上を主成分
とする化合物、およびＮｂを主成分とする化合物を加え
た混合物を焼成する誘電体磁器の製造方法において、Ｎ
ｂを主成分とする化合物のひとつとして、ＢａおよびＮ
ｂを主成分とする化合物を熱処理して得たＢａ＿５Ｎｂ
＿４Ｏ＿１＿５を用いることを特徴とする誘電体磁器の
製造方法。(3) Add Ni to pre-calcined BaTiO_3 powder
, Zn, and Mg, and a compound containing Nb as a main component.
As one of the compounds containing b as the main component, Ba and N
Ba_5Nb obtained by heat treating a compound containing b as the main component
A method for manufacturing dielectric ceramic, characterized by using _4O_1_5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63194070A JPH0244061A (en) | 1988-08-03 | 1988-08-03 | Dielectric magnetic composite and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63194070A JPH0244061A (en) | 1988-08-03 | 1988-08-03 | Dielectric magnetic composite and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0244061A true JPH0244061A (en) | 1990-02-14 |
Family
ID=16318462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63194070A Pending JPH0244061A (en) | 1988-08-03 | 1988-08-03 | Dielectric magnetic composite and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244061A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0292865A (en) * | 1988-09-29 | 1990-04-03 | Toshiba Corp | Production of porcelain composition having high dielectric constant |
| EP0534378A1 (en) * | 1991-09-25 | 1993-03-31 | Murata Manufacturing Co., Ltd. | Non-reducible dielectric ceramic composition |
| US5264402A (en) * | 1992-05-01 | 1993-11-23 | Murata Manufacturing Co., Ltd. | Non-reducible dielectric ceramic composition |
| US11227717B2 (en) * | 2019-06-17 | 2022-01-18 | Samsung Electro-Mechanics Co., Ltd. | Dielectric ceramic composition and multilayer ceramic capacitor comprising same |
-
1988
- 1988-08-03 JP JP63194070A patent/JPH0244061A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0292865A (en) * | 1988-09-29 | 1990-04-03 | Toshiba Corp | Production of porcelain composition having high dielectric constant |
| EP0534378A1 (en) * | 1991-09-25 | 1993-03-31 | Murata Manufacturing Co., Ltd. | Non-reducible dielectric ceramic composition |
| US5248640A (en) * | 1991-09-25 | 1993-09-28 | Murata Manufacturing Co., Ltd. | Non-reducible dielectric ceramic composition |
| US5264402A (en) * | 1992-05-01 | 1993-11-23 | Murata Manufacturing Co., Ltd. | Non-reducible dielectric ceramic composition |
| US11227717B2 (en) * | 2019-06-17 | 2022-01-18 | Samsung Electro-Mechanics Co., Ltd. | Dielectric ceramic composition and multilayer ceramic capacitor comprising same |
| US11763990B2 (en) | 2019-06-17 | 2023-09-19 | Samsung Electro-Mechanics Co., Ltd. | Dielectric ceramic composition and multilayer ceramic capacitor comprising same |
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